Punch through protection of heavily irradiated ATLAS07 mini- sensors. Status report Jan Bohm, Institute of Physics ASCR, Prague Peter Kodys, Tomas Jindra,
TCAD Simulation
Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug. 23-24, 2006,
Præsentation xx Topsil’s involvement in NitroSil project Nitrogen impact on vacancy aggregation in silicon single crystals Michał Kwestarz (PL), Jarosław.
1 Irradiation Study of n-on-P Strip Sensors K. Hara, K. Inoue, A. Mochizuki (Univ. of Tsukuba) Y. Unno, S. Terada, T. Kohriki, Y. Ikegami (KEK) K. Yamamura,
SIMS: Secondary Ion Mass Spectroscopy Principle Secondary Chamber (sample loading) Primary Chamber (target) Ion source O2+, Cs+ Ion gun DeltaV=5KV Magnetic.
WP4: Radiation Hard Semiconductor Detectors - Status of activities - Michael Moll (PH-DT), Heinz Pernegger (PH-ADE) PH Theme 3 R&D meeting 4.6.2009 WP4.
M. Bruzzi et al. Thermal donors in MCz Si, Trento Meeting Rd50 February 28, 2005 Mara Bruzzi, D. Menichelli, M. Scaringella INFN Florence, University of.
Edge-TCT and Alibava measurements with pion and neutron irradiated micro-strip detectors V. Cindro 1, G. Kramberger 1, I. Mandić 1, M. Mikuž 1,2, M. Milovanović.
Modelling of Radiation Induced Vacancy-Interstitial Clusters Ernestas Žąsinas & Juozas Vaitkus Institute of Applied Research, Vilnius University, Vilnius,
Comprehensive Radiation Damage Modeling of Silicon Detectors
TSC measurements on n- and p-type MCz silicon diodes after irradiation
