1. 2 Collaborators EXPERIMENT Duc Nguyen, 3 rd year student UNM/AFRL RVSE Camron Kouhestani, 3 rd year student UNM/AFRL RVSE Rod Devine, Think Strategically/AFRL.
ECFA ILC Workshop, November 2005, ViennaLadislav Andricek, MPI für Physik, HLL DEPFET Project Status - in Summary Technology development thinning technology.
Qingyu Wei, MPI für Physik, HLL
Collaborators
Overview of Semiconductor Device Noise Research Gijs Bosman Noise Research Laboratory NEB 585 Electrical and Computer Engineering Department, University.
12 nm-Gate-Length Ultrathin- Body InGaAs/InAs MOSFETs with 8.3∙10 5 I ON /I OFF Cheng-Ying Huang 1, Prateek Choudhary 1, Sanghoon Lee 1, Stephan Kraemer.
