MICROWAVE CHARACTERSTICS OF SiGe HBT
Polyfuse
TDA1072A
MICS RFIC Group High efficiency Power amplifier design for mm-Wave 1 Seyed Yahya Mortazavi.
University of Notre Dame GaN based Heterojunction Bipolar Transistors John Simon EE 666 April 7, 2005.
InAlAs/InGaAs/InP DHBTs with Polycrystalline InAs Extrinsic Emitter Regrowth
