Imaging and modeling diffusion to defects in GaAs
Imaging and modeling diffusion to isolated defects in a GaAs/GaInP heterostructure
Using the model and algorithm shown to the right, we obtain the theoretical images above. These images, with A=4.2*10 7 cm 3 /s (defect pixel) and A=8.2*10.
Defect-related recombination and free-carrier diffusion near an isolated defect in GaAs
Overview of Semiconductor Device Noise Research
Overview of Semiconductor Device Noise Research Gijs Bosman Noise Research Laboratory NEB 585 Electrical and Computer Engineering Department, University.
