G. Grasso, A. Malagoli, M. Modica, V. Braccini, A. Tumino, S. Roncallo, E. Bellingeri, C. Ferdeghini, A.S. Siri INFM -LAMIA, Corso Perrone 24, 16152 Genova.
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Gao-Chan Yong IMP, China
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Introduction to MOS Transistors Section 6.1-6.4. Outline Similarity Between BJT & MOS Introductory Device Physics Small Signal Model.
