University of Notre Dame GaN based Heterojunction Bipolar Transistors John Simon EE 666 April 7, 2005.
SINTEF Wafers We studied two wafers. Wafer #24 and one oxygenated wafer.
High- Dielectric for Flexible Displays using Anodized Tantalum Pentoxide Jovan Trujillo
CCE in irradiated silicon detectors considering the avalanche effect
GaN MMIC Switch Handles High Power, DC-6 GHz
