Fig. 5.1 Physical structure of the enhancement-type NMOS transistor: (a) perspective view; (b) cross section. Typically L = 1 to 10 m, W = 2 to 500
1 CHAPTER 8 MOBILITY. 2 8.1 INTRODUCTION 3 High mobility material has higher frequency response and higher current. Electron-electron or hole-hole scattering.
SJTU J. Chen 1 2015-8-16 Chapter 5 Field-Effect Transistors (FETs)
