EEs801Seminar_FinFETs_vharihar
Intel 45nm high-k metal-gate press release
Impact of Low-Voltage Devices on Test and Inspection Teradyne Assembly Test Division Website: Michael J Smith [email protected].
Superconducting quantum circuits Sorin Paraoanu, KVANTTI group, Low Temperature Laboratory, Helsinki University of Technology Scientific Advisory Board.
TRI-GATE Transistor
Hexagonal Boron Nitride - Ubiquitous Layered dielectric for Two-Dimensional Electronics
Graphene Transistor By Shital Badaik
01240135
Level 54 Bsim4
Electric Field Modulation of Galvanomagnetic Properties of Mesoscopic Graphite
Low power Design Strategies Daniele Folegnani. Talk outline Why Low Power is Important Power Consumption in CMOS Circuits New Trends for Future Microprocessors.
DRC 2009 1 0.37 mS/ m In 0.53 Ga 0.47 As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Uttam Singisetti*, Mark A. Wistey, Greg.
