Effect of Radiative Levitation on Calculations of Accretion Rates in White Dwarfs Pierre Chayer 1 and Jean Dupuis 2 1 STScI, 2 CSA 17 th European White.
ULIS 2003-Udine Italy Evolution of Si-SiO 2 interface trap density under electrical stress in MOSFETs with ultrathin oxides F. Rahmoune and D. Bauza Institut.
Lessons from Spectral Evolution and High-Velocity Features in Core-Normal Type Ia
