2007 DRC Ultra Low Resistance Ohmic Contacts to InGaAs/InP Uttam Singisetti*, A.M. Crook, E. Lind, J.D. Zimmerman, M. A. Wistey, M.J.W. Rodwell, and A.C.
III-V FET Channel Designs for High Current Densities and Thin Inversion Layers [email protected] 805-893-3244, 805-893-5705 fax Mark Rodwell University.
Technology Development & Design for 22 nm InGaAs/InP-channel MOSFETs
THz & nm Transistor Electronics: It's All About The Interfaces.
