High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian.
IPRM 2010 Ashish Baraskar 1 High Doping Effects on in-situ Ohmic Contacts to n-InAs Ashish Baraskar, Vibhor Jain, Uttam Singisetti, Brian Thibeault, Arthur.
1 InGaAs/InP DHBTs in a planarized, etch-back technology for base contacts Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian J Thibeault, Mark Rodwell.
