ECE 342 – Jose Schutt-Aine ECE 342 Electronic Circuits 2. MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois.
UNIT I MOS TRANSISTOR THEORY AND PROCESS TECHNOLOGY.
Field-effect transistors ( FETs)
Lightning Return-Stroke Models 1. 1.Introduction and Classification of Models 2.Return-Stroke Speed 3.Engineering Models 4.Equivalency Between the Lumped-Source.
Filed Effect Transistor. In 1945, Shockley had an idea for making a solid state device out of semiconductors. He reasoned that a strong electrical.
Short Channel Effects in MOSFET. Defination A MOSFET device is considered to be short when the channel length is the same order of magnitude as the depletion-layer.
