Swiss Federal Institute for Snow and Avalanche Research SLF Preparation of alpine ski pistes.
Proposal for an FP6 STREP FET based on nanodevice ideas with SiC.
Nanotechnology on our Desktops Hard Disk Sensor Medium Transistor Gate SourceDrain Switching layer 5 nm Magnetic grain 10 nm Gate oxide 4 nm Well 6 nm.
Proposal for an FP6 STREP FET based on nanodevice ideas with SiC
