MURI 1 Rutgers Advanced Gate Stacks and Substrate Engineering Eric Garfunkel and Evgeni Gusev Rutgers University Departments of Chemistry and Physics Institute.
Lecture 5: Junctions
Cohen Tannoudji Lecture
Simulations of sub-100nm strained Si MOSFETs with high- gate stacks Lianfeng Yang, Jeremy Watling *, Fikru Adamu-Lema, Asen Asenov and John Barker Device.
Confined Carriers DRAGICA VASILESKA PROFESSOR ARIZONA STATE UNIVERSITY.
Simulations of sub-100nm strained Si MOSFETs with high- gate stacks
Kilby Lecture
