Report - 1bandi.chungbuk.ac.kr/~ysk/phy1_2012.pdf7cm/s @T=300K vth vd Jp,drift=qpvd vd ≈μpE μp Jp,drift=qμppE Jn,drift=qμnnE - 23 - For 300K low doped Si, μn≈1360cm2/V-sec μp≈460cm

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