WNS40H100CDual power Schottky diode26 April 2019 Product data sheet
1. General descriptionDual common cathode power Schottky diode designed for high frequency switched mode powersupplies in a TO-220 plastic package.
2. Features and benefits• Trench structure• High junction temperature up to 150°C• High efficiency• Low forward voltage drop, negligible switching losses
3. Applications• DC to DC converters• Freewheeling diode• OR-ing diode
4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit
VRRM repetitive peak reversevoltage
- - 100 V
IF(AV) average forwardcurrent
δ = 0.5 ; Tmb ≤ 133 °C; square-wavepulse; per diode; Fig. 1; Fig. 2; Fig. 3
- - 20 A
IO(AV) average output current δ = 0.5 ; Tmb ≤ 130 °C; square-wavepulse; both diodes conducting
- - 40 A
Static characteristics
IF = 10 A; Tj = 25 °C; Fig. 6; per diode - 0.53 0.59 V
IF = 10 A; Tj = 125 °C; Fig. 6; per diode - 0.49 0.56 V
IF = 20 A; Tj = 25 °C; Fig. 6; per diode - 0.64 0.71 V
VF forward voltage
IF = 20 A; Tj = 125 °C; Fig. 6; per diode - 0.61 0.68 V
VR = 100 V; Tj = 25 °C; Fig. 7; Fig. 8;per diode
- - 50 µAIR reverse current
VR = 100 V; Tj = 125 °C; Fig. 7; Fig. 8;per diode
- - 30 mA
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 2 / 11
5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol
1 A1 anode 1
2 K cathode
3 A2 anode 2
mb K mounting base; connected tocathode
TO-220E
sym125
A2A1
K
6. Ordering informationTable 3. Ordering information Type number Package
Name Orderable part number Packing
method Small packing quantity
Package version
Package issue date
WNS40H100C TO220 WNS40H100CQ Tube 50 TO220E 26-April-2019
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 3 / 11
7. Limiting valuesTable 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reversevoltage
- 100 V
VRWM limiting crest workingreverse voltage
- 100 V
VR limiting reverse voltage DC - 100 V
IF(AV) average forward current δ = 0.5 ; Tmb ≤ 133 °C; square-wavepulse; per diode; Fig. 1; Fig. 2; Fig. 3
- 20 A
IO(AV) average output current δ = 0.5 ; Tmb ≤ 130 °C; square-wavepulse; both diodes conducting
- 40 A
tp = 10 ms; Tj(init) = 25 °C; sine-wavepulse; per diode; Fig. 4
- 380 AIFSM non-repetitive peakforward current
tp = 8.3 ms; Tj(init) = 25 °C; sine-wavepulse; per diode
- 418 A
Tstg storage temperature -40 150 °C
Tj junction temperature - 150 °C
0 6 12 18 24 300
4
8
12
16
20
24
IF(AV) (A)
Ptot(W)
δ = 1
0.5
0.2
0.1
ama2-001
IF(AV) = IF(RMS) × √δVo = 0.557 V; Rs = 0.0071 Ω
Fig. 1. Forward power dissipation as a function ofaverage forward current; square waveform; maximumvalues; per diode
0 4 8 12 16 200
4
8
12
16
20
IF(AV) (A)
Ptot(W)
ama2-002
a = 1.57
1.92.2
2.8
4.0
a = form factor = I F(RMS) / IF(AV)Vo = 0.570 V; Rs = 0.0071 Ω
Fig. 2. Forward power dissipation as a functionof average forward current; sinusoidal waveform;maximum values; per diode
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 4 / 11
-50 0 50 100 150 2000
4
8
12
16
20
24
Tmb (°C)
IF(AV)(A)
ama2-003
133°C
Fig. 3. Average forward current as a function ofmounting base temperature; maximum values; perdiode
10-5 10-4 10-3 10-210
102
103
104
tp (s)
IFSM(A)
IF
Tj(init) = 25 °C max
IFSM
tp
t
ama2-004
Fig. 4. Non-repetitive peak forward current as a functionof pulse width; sinusoidal waveform; maximum values;per diode
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 5 / 11
8. Thermal characteristicsTable 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit
per diode; Fig. 5 - - 1 K/WRth(j-mb) thermal resistancefrom junction tomounting base both diodes conducting - - 0.6 K/W
Rth(j-a) thermal resistancefrom junction toambient
in free air - 60 - K/W
10-6 10-5 10-4 10-3 10-2 10-1 1 1010-4
10-3
10-2
10-1
1
10
tp (s)
Zth(j-mb)(K/W)
P
ttpT
tpδ = T
ama2-005
δ = 0.5δ = 0.3δ = 0.1δ = 0.05
single pulse
δ = 0.02δ = 0.01
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration; maximumvalues; per diode
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 6 / 11
9. CharacteristicsTable 6. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit
Static characteristics
IF = 10 A; Tj = 25 °C; Fig. 6; per diode - 0.53 0.59 V
IF = 10 A; Tj = 125 °C; Fig. 6; per diode - 0.49 0.56 V
IF = 20 A; Tj = 25 °C; Fig. 6; per diode - 0.64 0.71 V
VF forward voltage
IF = 20 A; Tj = 125 °C; Fig. 6; per diode - 0.61 0.68 V
VR = 100 V; Tj = 25 °C; Fig. 7; Fig. 8;per diode
- - 50 µAIR reverse current
VR = 100 V; Tj = 125 °C; Fig. 7; Fig. 8;per diode
- - 30 mA
0 0.2 0.4 0.6 0.8 1 1.20
10
20
30
40
50
VF (V)
IF(A)
ama2-006
(1) (2) (3)
Vo = 0.557 V; Rs = 0.0071 Ω(1) Tj = 150 °C; typical values(2) Tj = 150 °C; maximum values(3) Tj = 25 °C; maximum values
Fig. 6. Forward current as a function of forward voltage;per diode
0 20 40 60 80 10010-1
1
10
102
103
104
105
VR (V)
IR(μA)
ama2-007
(1)
(3)
(2)
(4)
(1) Tj = 25 °C; typical values(2) Tj = 100 °C; typical values(3) Tj = 125 °C; typical values(4) Tj = 150 °C; typical values
Fig. 7. Reverse leakage current as a function of reversevoltage; per diode; typical values
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 7 / 11
10-1 1 10 10210
102
103
104
VR (V)
Cj(pF)
ama2-008
f = 1 MHz; Tj = 25 °C
Fig. 8. Junction capacitance as a function of applied reverse voltage; per diode; typical values
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 8 / 11
10. Package outline
Fig. 9. Package outline TO-220E
Plastic single-ended package;heatsink mounted;1 mounting hole; 3 leads TO-220AB TO220
ØP
L1
D2
E1
Q
c
A1AE
q
D1
D
L
H1
2xe b
b1
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 9 / 11
11. Legal information
Data sheet status
Documentstatus [1][2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have
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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without WeEn Semiconductors’ warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondWeEn Semiconductors’ specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies WeEn Semiconductors forany liability, damages or failed product claims resulting from customerdesign and use of the product for automotive applications beyond WeEnSemiconductors’ standard warranty and WeEn Semiconductors’ productspecifications.
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 10 / 11
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TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.
WeEn Semiconductors WNS40H100CDual power Schottky diode
WNS40H100C All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet 26 April 2019 11 / 11
12. Contents1. General description......................................................12. Features and benefits.................................................. 13. Applications.................................................................. 14. Quick reference data....................................................15. Pinning information......................................................26. Ordering information....................................................27. Limiting values............................................................. 38. Thermal characteristics............................................... 59. Characteristics..............................................................610. Package outline.......................................................... 811. Legal information....................................................... 9
© WeEn Semiconductors Co., Ltd. 2019. All rights reservedFor more information, please visit: http://www.ween-semi.comFor sales office addresses, please send an email to: [email protected] Date of release: 26 April 2019
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