The Development of SiC Technology and Its Application in the Power Grid
Prof. YU Kunshan
Smart Grid Research Institute of SG
Department of Electrician New Material and Microelectronics
2012.9Shanghai
Outline
1• Introduction
2• Characteristics and Advantages
3• Latest Progress
4• Application
5• Key Technologies
6• Prospect Application of Power Grid
7• Conclusion
2
1 Introduction
Power device is widely used in transportation, iron and steel smelting, motor drives
and power systems.
It is indispensable in the development of low-carbon economy, energy conservation,
control field warming .
The requirements of power devices in power grid: High operating voltage
High power density
High junction and Operating
Temperature
High power capacity
High switching frequency
Low losses
Easy Control Silicon power devices determined by the material
properties is closed to the performance limit. 3
1 Introduction
Typical applications of power devices in power grid.
LCC-HVDC VSC-HVDC Multi-HVDC
STATCOM DVR Inverter
4
1 Introduction
The demand of power devices in power grid.
AC transmission technology Demand
Domestic thyristor-based FACTS equipment has developed, such as: SC, HR, FCL, SVC.
Higher voltage, Greater capacity.
The relevant demonstration studies based on Turn-off devices FACTS equipment have been carried out , such as : STATCOM, UPFC.
Higher voltage, better performance of series and parallel.
Domestic Turn-off devices -based DFACTs equipment has developed ,such as :DVR , SSTS , DSTATCOM , APF.
Greater flow capacity, More cooling capacity.
More Efficiency FACTS or DFACTs , such as : TCPST, CSC, SST.
Research and integrated of power electronic devices based on new materials. 5
1 Introduction
DC transmission technology Demand
HVDC technology based on
thyristor has developed and the
capacity is growing.
R&D of thyristor based on new
material(SiC)
VSC-HVDC technology has been
carried out.
Presspack IGBT
More compact, more efficient HVDC
and DC grid technology.
Research and integrated of power electronic devices based on new materials
The demand of power devices in power grid
6
2 Characteristics and Advantages
The critical avalanche breakdown electric field intensity is 10 times that of silicon.
The thermal conductivity is three times that of silicon, can work properly at 300 .℃
The temperature coefficient is close to zero.
Switch much faster than silicon devices, reducing the switching losses.
Conduction resistance of several tenth of the equivalent silicon devices, reducing conduction losses and the total energy consumption can be reduced more than 30%.
Outstanding advantages of silicon carbide power devices.
The current density can reach 4 times that of the Si.
High Voltage
Current density
High Temperature
Low Loss
SiC is suitable for the power electronic devices with high-power, high temperature and anti-radiation. 7
2 Characteristics and Advantages
The thickness of Si, SiC, GaN, and Diamond withstand 10kV voltage.
Use of silicon carbide, the thickness of the device is reduced to silicon’s 1/10.
8
DiamondSiCGaNSi
2 Characteristics and Advantages
Characteristics of the power devices based on SiC and diamond material.
High Temperatures
High Voltage
High Frequency
Low Loss
Wide Band gap
High breakdown electric field
High thermal conductivity
High carrier drift velocity
GaN thermal conductivity is not high enough , have advantages in terms of high-frequency ;
Diamond preparation is very difficult, the processing technology is restricted ;
SiC power devices fastest growing in high voltage power device.
9
3 Latest Progress
SBD 、 JBS
Switch
Bipolar diodes
IGBT
SiC power device
Rectifier
PIN
Unipolar transistors
Bipolar transistor
MOSFET JFET BJT,GTO
The Type of SiC Power Devices
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3 Latest Progress
JFET/SITCreeSemisouthInfineon/SiCEDHitachiToshiba…
MOSFETBefore 2011
CreeFairchildMitsubishiPhilipsRohmGE…
IGBT/Thyristor
Cree
Schottky diodes
Infineon/SiCEDMitsubishiRohmSemisouthIRSTMicroelectronics…
PiN/JBS diodes
Cree
BJT TranSiCCree…
SiC devices
The CREE prepared 20kV devices , low-voltage devices
have entered the market.
The CREE prepared 20kV devices , low-voltage devices
have entered the market.
SiC Power Devices Manufacturers
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Schottky diodes
1300A/5000V
10kV
PINdiodes
180A/4.5kV
19.5kV
POWER MOSFET 100A/10kV
thyristor 100A/5kV
GTO 100A/9kV
IGCT 200A/4.5kV
IGBT 13kV
One-to-one correspondence with the silicon-based devices, a variety of silicon carbide devices have been developed in the lab.
1700V, 50A SiC SBD has been commercialized.
1700V, 50A SiC MOSFET has been commercialized.
MOSFET GTO
SiC Power device parameters
3 Latest Progress
12
3 Latest Progress
Cree - 1200V/50A SiC SBDCree - 1200V/50A SiC SBDSchematic diagram of SiC SBDSchematic diagram of SiC SBD
1 、 SiC SBD
13
3 Latest Progress
2 、 SiC JBS
Cree 10kV 20A SiC 模块
Cree has producted 10kV/20A JBS diode on 3-inch wafer. Chip area is 15mm x 11mm, yield is 37%.
Cree has producted 10kV/20A JBS diode on 3-inch wafer. Chip area is 15mm x 11mm, yield is 37%.
Large wafers, big chip, acceptable yield
14
3 Latest Progress
3 、 SiC PiN Diode
The left shows Cree product a 10kV/20A PIN diode on 2-inch wafer , the yield reached 40%. Right is a PiN diode with positive 3.2V/180A, reverse leakage 1μA/4.5KV.
The left shows Cree product a 10kV/20A PIN diode on 2-inch wafer , the yield reached 40%. Right is a PiN diode with positive 3.2V/180A, reverse leakage 1μA/4.5KV.
15
3 Latest Progress
Rutgers University producted 1kV/20A BJT on 2-inch wafer 。
TranSiC 1200V/20A BJT .
SiC BJT switching quickly , can work at 100kHz. The process is relatively simple, relatively high yield.
SiC BJT switching quickly , can work at 100kHz. The process is relatively simple, relatively high yield.
4 、 SiC BJT Bipolar Transistor
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3 Latest Progress
5 、 SiC MOSFET
Cree produced a 10kV/20A MOSFET on a 3-inch wafer. The area of the chip is more than 8mm x 8mm.
Cree produced a 10kV/20A MOSFET on a 3-inch wafer. The area of the chip is more than 8mm x 8mm.
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3 Latest Progress
3.4 SiC JFET
2009, SiC JFET products to market
2009, SiC JFET products to market
6 、 SiC JFET
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3 Latest Progress
7 、 SiC IGBT
Cree Inc. reported a silicon carbide n-channel IGBT with 22mΩcm2 characterized resistance and reverse voltage of 13kV, about 10 times lower than 13kV silicon carbide unipolar devices.
Cree Inc. reported a silicon carbide n-channel IGBT with 22mΩcm2 characterized resistance and reverse voltage of 13kV, about 10 times lower than 13kV silicon carbide unipolar devices.
19
3 Latest Progress
8 、 SiC Thyristor
In 2009, Cree reported a silicon carbide GTO , N- SubstrateIn 2009, Cree reported a silicon carbide GTO , N- Substrate
Cree 9kV GTO , Single-chip current 400ACree 9kV GTO , Single-chip current 400A20
3 Latest Progress
9 、 Si IGBT and SiC JBS Hybrid modules
55kW three-phase Inverters used 600V/600A IGBT and 600V/75A SiC SBD, the efficiency is more than 90% . The loss of reverse is substantial decline at the peak power 47kW.
55kW three-phase Inverters used 600V/600A IGBT and 600V/75A SiC SBD, the efficiency is more than 90% . The loss of reverse is substantial decline at the peak power 47kW.
21
3 Latest Progress
10 、 all SiC MOSFET and JBS Hybrid
modules
A 1200V 800A SiC dual power module for DC / AC inverter circuit is composed by 20 80A SiC MOSFETs and 20 50A SiC JBS, the inverter loss is 40% less than that of Si hybrid modules, up to 97.5%.Switching frequency to four times higher.
A 1200V 800A SiC dual power module for DC / AC inverter circuit is composed by 20 80A SiC MOSFETs and 20 50A SiC JBS, the inverter loss is 40% less than that of Si hybrid modules, up to 97.5%.Switching frequency to four times higher.
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3 Latest Progress
Domestic Research
Domestic : urgent needs to enhance the
research level of SiC power device
Compared to other countries, SiC is a comprehensive study of the
late start has become a hot topic in recent years.
Although having the basic process and the foundation of high-
voltage device, there is a large gap from us to foreign advanced
level.
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The leading R&D Department is military, major in radar and microwave devices. The R&D of power electronic devices efforts does not match the user demand.
Foreign SiC substrate material is costly, Domestic SiC substrate material lack of quality and stability .
The requirement of devices processing is strict.There is no civilian device process line here in China.
The problems in domestic
3 Latest Progress
24
Schottky diode has went into the civilian market;Kansai Electric Power Company for wind, solar inverter, Mitsubishi Electric for silicon carbide inverter air conditioner ,The conversion efficiency can be increased from 95% of the silicon device to 97-99%.
Schottky diode has went into the civilian market;Kansai Electric Power Company for wind, solar inverter, Mitsubishi Electric for silicon carbide inverter air conditioner ,The conversion efficiency can be increased from 95% of the silicon device to 97-99%.
Widely uesed in household appliances, office equipment, power management and UPS
Widely uesed in household appliances, office equipment, power management and UPS
Efficient compact power
4 Application
Toyota hybrid electric vehicles have been used in motor control, and higher breakdown voltage, less open resistance value rate, 600 °C high temperature operation, improve power conversion performance of hybrid electrical power automotive.
Automotive electronics
4 Application
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4 Application
Reduce ship weightAircraft carrier CVN-781 、 Aircraft launching system using the new technology of silicon carbide power .2 、 SiC-based high frequency power electronic module, the volume and weight of the transformer is less than half the volume and weight reduction can be a better configuration of the other tasks sensor systems, weapons and other equipment.Reduce the total weight of the aircraft carrier 170 tons, the volume is reduced by 290 m3 .
Military applications
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4 Application
Military applications
MEA aircraft needs high efficiency and high temperature transistor, SiC power device for energy efficiency helps to develop more small, more light and faster aircraft .
More Electric Aircraft MEA
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4 Application
Three-phase PV inverter efficiency
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Large size, low defect SiC single crystal technology.
High-voltage SiC technology.
5 Key Technologies
30
Fast, low defects, extra-thick epitaxial material growth technology.
5 Key Technologies
Technology of the fabrication
No. Name Device Requirement
1 Fast and ultra thick epitaxial technology
CVD Epitaxial furnace
thickness more than 100um
2High activation rate ion implantation technology
High temperature high-energy ion injection machine
800keV,400℃
3 High temperature annealing technology
High temperature annealing furnace
1600 ℃
4 High temperature oxidation technology
High temperature oxidation furnace
1400℃
31
5 Key Technologies
Development goals
SiC wafer
SiC device
Peripheral technology
Achieve 6 inches wafer and above.
Get rid of the dependence .
The price of unit area has down to 1/10.
Rectifier change to large current (above 100A).
Improve the characteristics.
Mass Production .
Breakthrough the limit of packaging temperature
The control circuit and the peripheral devices
Improve the controlling method.
The new noise reduction strategy .
Future Prospects
Progresses in the
development of device
2012 2013 2014 2015 2016
1200V SBD
4500V JBS
10kV SiC PIN
1200V – 6500V Si &SiC Hybrid model
3300V JBS
6500V PiN
1500V MOSFET
3300V MOSFET
4500V MOSFET
6500V MOSFET
10kV MOSFET 、 IGB
T
5 Key Technologies
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6 Prospect Application of Power Grid
Significant demand for gridTransmission systemImprove safety and reliabilityIncrease transmission
capacityImprove transmission
efficiencyMaximize the access to
renewable energy to Power system
Distribution systemImprove the security,
reliability and economy valueImprove the performance of
electrical equipmentImprove energy efficiency
SiC power device will provide a efficient solution34
Electronics technologies used in renewable generation
Decreases loss:2/3 , Increase generating capacity:2-3 %35
6 Prospect Application of Power Grid
By using SiC power devices, an all-DC power grid will be
established eventurally
SiC device ( High voltage 30kV 、 large
capacity 3000A )
DC circuit breaker
VSC- DC Grid
measurement, control and protection in DC
DC cable
Key Technologies of DC1
2
3 4
5
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7 Conclusion
Experts concerned the excellent performance of SiC power
devices. It need to make more mature development of diverse
applications.
SiC power devices will drive the generation, transmission, and
distribution with technological progress.
The new SiC power devices used in various types of grid and
electric equipment, it makes the possibility that the electric
equipment can be attached power quality control ability. This
feature will change the pattern of power quality control technology
.
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Thank You !
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