The Czochralski method (CZ)

10 mm

Si, Ge, Sn, Bi, Au, AlSb, InSb,GaSb, CsJ, KBr, CaF , BaF ,2 2

NaCl, Li N, Al-Pd-Mn etc. 3

Crystals grown:

1. Melting of the starting material

2. Seeding

3. Necking

4. Shouldering

5. Equal diameter growth

Seed

Growing crystal

Melt

Heater

Crucible

Controlledatmosphere

Thermocouple

Vessel(water cooled)

Seed holder(water cooled)

Growth equipment

A view of the AlSb crystal in growth

4

1

5

2

3

ln(1-g)-1.7

-5.0

-4.0

-3.0

-2.0

-1.0

0

-0.7

1. Se, k=0.112. Te, k=0.153. In, k=0.104. Mn, k=0.055. Yb, k=0.007

ln (C / C ) = ln k + (k-1) ln (1-g) S i

ln(C

/C

)S

i

Segregation of Se, Te, In, Mn and Yb in AlSb, as function of the fraction (g)of melt solidified, where k is the effective segregation coefficient, C thecomponent of dopant and C the initial dopant concentration

S

i

AlSb single crystal