Spin control by application of electric current and voltage in FeCo–MgO junctions
by Yoshishige Suzuki, Hitoshi Kubota, Ashwin Tulapurkar, and Takayuki Nozaki
Philosophical Transactions AVolume 369(1951):3658-3678
September 28, 2011
©2011 by The Royal Society
Typical structure of a magnetic tunnel junction (MTJ) nanopillar designed for spin-injection magnetization switching (SIMS) experiments.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Typical SIMS hysteresis loop obtained for a CoFeB/MgO/CoFeB MTJ. The junction area, free-layer thickness, resistance × area product and MR are 100×200 nm, 3 nm, 3 Ω μm2 and about 100
per cent, respectively.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Comparison of the magnetization processes driven by (a) spin-transfer torque and (b) external magnetic field, for in-plane magnetized nanopillars.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Schematic of a magnetic nanopillar consisting of two ferromagnetic layers separated by a barrier layer.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Schematic of the spin-torque diode effect: (a) negative current; (b) null current; and (c) positive current.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
(a) Measurement set-up for the spin-torque diode effect measurements.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Bias dependence of (a) the spin-transfer torque and (b) the field-like torque.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Schematic of the sample stack.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Thickness dependence of magnetic hysteresis curves of the ultrathin FeCo layer sandwiched between Au and MgO layers.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Magnetic hysteresis curves of a 0.58 nm thick FeCo layer, measured under various applied bias voltages.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Schematic of the voltage-induced magnetic anisotropy change.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
(a) Magnetic hysteresis curves of a 0.48 nm thick FeCo layer measured under bias voltages of ±200 V.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
Macro-spin model simulation of voltage-induced dynamic magnetization switching.
Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678
©2011 by The Royal Society
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