The integration of atomic physics with quantum device technology enabled the exploration of the recent field of single/few atom based nanoelectronics. I review the basic concepts of atom based nanoelectronics, including the technological aspects of the fabrication, and the most interesting physical effects obtained in silicon single donor transistors, including coherent transport, microwave excitations, single donor spectroscopy, single charge dynamics, single spin dynamics, valley based physics, few atom circuits and the impurity band formation. Future applications in fundamental physics and classical and quantum information technologies are discussed, by highlighting the critical aspects which currently impose
limits to the most advanced developments.
Abstract
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Silicon nanoelectronics
Single donor devices
Few donor physics
Outline
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Silicon nanoelectronics
Silicon nanoelectronics provides the ground for the addition of individual donors in devices
In this section I show some suitable devices for creating single/few atom doped devices
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Near intrinsic silicon substrate
Enrico Prati |
Dzurak et al. 2010‐ (Australia) ‐ Si/SiO2
W H Lim et al 2011 Nanotechnology 22 ,335704
Nano2012 ‐ INVITED LECTURE
Silicon CMOS single electron transistors
Enrico Prati |Nano2012 ‐ INVITED LECTURE
20 x 20 nm x nm
Sanquer et al. 2005‐ (CEA) ‐ Si/SiO2
E Prati et al 2012 Nanotechnology 23, 215204
Spectrum of donors
Enrico Prati |Nano2012 ‐ INVITED LECTURE
If you put a donor in bulk Silicon,it adds new states below the conduction bandin the band gap.
The spectrum is Hydrogen‐like
Scaling down the MOSFET technology
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Low temperature: you see discrete spectrum as sequential tunneling
ITRS Roadmap and deterministic doping
Enrico Prati |Nano2012 ‐ INVITED LECTURE
ITRS follows the evolution of deterministic doping technology
Source:ITRS 2011
Single atom doping ‐ 1
Enrico Prati |
Combination of scanning tunnelling microscopy and hydrogen‐resist lithography
University of New South Wales
Concept: bottom‐up V lattice site precisionX extremely slow
Nano2012 ‐ INVITED LECTURE
Single atom doping – 2
Enrico Prati |
Single atom placement with scanning probe alignment
nm-apertures for nm-accuracy
Berkeley National Laboratory:
Nano2012 ‐ INVITED LECTURE
Single atom doping – 3
Enrico Prati |
Single ion implantation
University of Waseda, Tokyo:
University of Melbourne:
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Device topology and transport
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Sellier et al PRL 2006 Golovach et al PRB 2010 Mazzeo et al APL 2012
Single atom based devices: review
Enrico Prati |Nano2012 ‐ INVITED LECTURE
2006 TU Delft (IMEC) [Lansbergen et al, PRL 2006]
2007 NTT [Ono et al, APL 2007] - acceptor
2008 MDM (STM) [Prati et al, PRB 2009]
320 360 400
-5
0
5
35 meV61 meV
Ec
Ecg(meV)
Vd (
mV
)
1.000E-5
5.574E-5
3.107E-4
0.001732
0.009655
0.05382
0.3000
G(e2/h)
Ids ~(P)1/2
∼
Photon assisted tunneling300 mK 40 GHz
Single atom in a NanoFET
Enrico Prati |Nano2012 ‐ INVITED LECTURE
2009 CEA (LETI) [Pierre et al, Nat. Nanotech.]
2010 UniMelbourne [Tan et al, Nano Lett.]
Generalized temperature 1/kβby a finite grand canonical ensemble (small N)
Sample: a commercial NanoFETchannel <180x280
Defect‐SET system
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Measured by the capture and emission of a single defect at the Si/SiO2
E. Prati et al., Phys. Rev. B (2006)E. Prati, J, Stat. Mech. (2010)E. Prati et al., Appl. Phys. Lett. (2010)
Tnom = 0.29 K
T2des = 0.80 K about 16-20electrons
Donor‐SET system
Enrico Prati |
Spin of electrons bound to a donor
Nano2012 ‐ INVITED LECTURE
Single spin readoutA.Morello et al., Nature 2010 Mazzeo et al., APL 2012
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.0
0.5
1.0
Time (ms)
Nor
mal
ized
sig
nal
Imaging of individual donors
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Shizuoka University
Ligowski et al 2008 APL
Kelvin force microscope
Quantum transport at low temperature
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Isolated donors Semidilute regime Intermediate
Ids U
Vt
?
U = 5 meVt = 1 meV
Coulomb blokade peaks
Anderson-Mott Transition
Ids U
Vt
Lower and upper Hubbard bands.Each donor has 12 fold degenerate(6 valleys and 2 spin) levels, so 72 levels per each band are available
Activation energy
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Ids U
Vt
Overlapped bands
Ids U
Vt
Localized electrons
Delocalizedelectrons
Si Conductionband
Upper band Activation energy∆E = 6-7 meV
Upper band Activation energy∆E = 1-2 meV
Separate bands
Arrays of donors: samples
Enrico Prati |Nano2012 ‐ INVITED LECTURE
E. Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada, Nature Nanotech. (2012)
Anderson Mott transition in the arrays of donors
Enrico Prati |Nano2012 ‐ INVITED LECTURE
E. Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada, Nature Nanotech. (2012)
Wigner phase to Fermi glass transition
Enrico Prati |Nano2012 ‐ INVITED LECTURE
1 Wigner phase2-3 Fermi glass
E. Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada, Nature Nanotechnology 2012
Applications: AC response and electron pumping
Enrico Prati |Nano2012 ‐ INVITED LECTURE
(2012)
NTT Labs in Japan
Application: donor based circuits
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Leti et al APL (2011)
E. Prati (2011) J. Nanoscience andNanotechnoogyValley changeover switch
Applications to quantum information processing
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Extremely challenging to reproduce or even to realize
Dzurak, JamiesonAustralia
T2=1 µs
Spin qubit based proposal Charge qubits based proposal
Application: single photon counter
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Tabe et al. (2011) Physica Status Solidi a
[Waseda University]Prof. Takahiro ShinadaDr. Masahiro Hori
[CEA‐LETI]Dr. Marc SanquerDr. Romain WacquezDr. Matthieu PierreDr. Maud Vinet
Acknowledgement to co‐workers of publications
Enrico Prati |Nano2012 ‐ INVITED LECTURE
[Politecnico di Milano] Dr. Giorgio FerrariDr. Filippo Guagliardo
[Laboratorio MDM ‐ CNR]Prof. Marco FanciulliMatteo Belli Marco De MichielisGiovanni MazzeoGuillaume LetiSimone CoccoGuido Petretto
Funding:FP VII: AFSID Project (Resp. M. Sanquer)Fondazione Cariplo: ELIOS Project (Resp. M. Fanciulli)Italy-Japan Bilateral Projects (Resp. E. Prati and T. Shinada)• Grant-in-Aid for Scientific Research from MEXT, Japan• PEST 2010-2012 from MAE, Italy• CNR STM Program 2011 Consiglio Nazionale delle Ricerche (CNR)
Conclusions
Perspectives:Low consumption devicesQuantum information processingNew quantum channelsAtom based circuitsPhoton sensors
Enrico*prati_cnr*it
Enrico Prati |Nano2012 ‐ INVITED LECTURE
References
Enrico Prati |Nano2012 ‐ INVITED LECTURE
Nature Nanotechnology [IF 30.306]E. Prati, M. Hori, F. Guagliardo, G. Ferrari and T. Shinada, Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor, Nature Nanotechnology (2012)
[IF 30.306]Applied Physics Letters [IF 3.844]M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli, M. Fanciulli, "Compact silicon double and triple dots realized with only two gates",
Applied Physics Letters, 95, 242107 (2009)[IF 3.844]E. Prati, M. Belli, M. Fanciulli and G. Ferrari, Measuring the Temperature of a Mesoscopic Electron System by means of Single Electron Statistics, Applied Physics Letters
96, 113109 (2010) arXiv:1002.0037 [IF 3.844]E. Prati et al., Adiabatic Charge Control in a Single Donor Atom Transistor, Applied Physics Letters, 98, 5, 053109 (2011) [IF 3.844]G.Leti, E. Prati, M. Belli, G. Petretto, M. Fanciulli, M. Vinet, R. Wacquez and M. Sanquer, Switching quantum transport in a three donors silicon Fin‐Field Effect Transistor,
Appl. Phys. Lett. 99, 242102 (2011) [IF 3.844].G. Mazzeo et al., Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon, Applied Physics Letters (2012) [IF 3.844]Nanotechnology [IF 3.979]E. Prati, M. De Michielis, M. Belli, S. Cocco, M. Fanciulli, D. Kotekar‐Patil, M. Ruoff, D. P Kern, D. A. Wharam, J. Verduijn, G. C. Tettamanzi, S. Rogge, B. Roche, R. Wacquez,
X. Jehl, M. Vinet and M. Sanquer., Few Electron Limit of n‐type Metal Oxide Semiconductor Single Electron Transistors, Nanotechnology, 23, 215204 (2012) [IF 3.979]Physical Review B [IF 3.979]E. Prati, R. Latempa, M. Fanciulli, "Microwave Assisted Transport in a Single Donor Silicon Quantum Dot", Physical Review B 80, 14, 165331 (2009) [IF 3.979] E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro, “Effect of the Triplet State on the Random Telegraph Signal in Si n‐MOSFETs”, Phys. Rev. B 74, 033309 (2006) [IF 3.691]Journal of Statistical Mechanics [IF 2.758]E. Prati, Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device , J .of Stat. Mech. P01003 (2010)[IF 2.758]Journal of Applied Phsycis [IF 2.201]G. Ferrari, L. Fumagalli, M. Sampietro, E. Prati and M. Fanciulli, “DC current modulation in field effect transistors operating under microwave irradiation for quantum read
out”, J. Appl. Physics, 98, 044505 (2005) [IF 2.201]E. Prati, M. Fanciulli, G. Ferrari, A. Calderoni, M. Sampietro, "Effect of microwave irradiation on the emission and capture dynamics in silicon metal oxide semiconductor
field effect transistors", Journal of Applied Physics 103, 104502, (2008) [IF 2.201]E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro, "Giant random telegraph signal generated by single charge trapping in submicron n‐metal‐oxide‐semiconductor field‐effect
transistors", Journal of Applied Physics 103, 1 (2008) [IF 2.201]Physics Letters A [IF 2.174]E. Prati, et al., "Microwave irradiation effects on random telegraph signal in a MOSFET", Physics Letters A 370, 491‐493 (2007) [IF 2.174]E. Prati, M. Fanciulli, "Manipulation of localized charge states in n‐MOSFETs with microwave irradiation", Physics Letters A 372, 3102‐3104 (2008) [IF 2.174]Journal of Nanoscience and Nanotechnology [IF 1.987]E. Prati, Valley Blockade Quantum Switching in Silicon Nanostructures , J. Nanosc. and Nanotech. 11, 10, 8522‐8526 (2011) [IF 1.987]
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