L a b Quantum Nano Engineering Lab 10/23/20151
30.11.14
Quantum Nano-Engineering Lab
L a b Quantum Nano Engineering Lab 10/23/20152
Many thanks to
Grzegorz Jung
Physics department , Ben Gurion University Beer Sheva Israel
Ron Naaman
Department of Chemical Physics, Weizmann Institute, Rehovot 76100, Israel
Nadav Katz, Yaov Kalcheim, Oded Millo ,
Racah Institute of Physics, Hebrew University, Jerusalem 91904, Israel
Uri Banin
Department of physical chemistry , Hebrew University, Jerusalem 91904, Israel
And
Financing:, ISF, ISF-BICORA, DARPA, MOD, Israel Taiwan, Magneton
Capital Nature , FTA , Peter Brojde center, Volkswagen, Leverhulme
Our Group: Dr. Shira Yochelis, Eyal Cohen, Eran Katzir,
Avner Neubauer, Guy Koplovitz, Oren Ben Dor, Ido
Eisnberg, Ohad Westrich, Matan Galanty. Nir Peer, Chen
Alpern; Amir Ziv, Aviya Perlman Illouz, Kuti Uliel
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Lecture Synopsis
• Quantum effects at room temperature ?
• Chiral induced spin selectivity effect (CISS)
• CISS based devices
Au
EF
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Toward RT Quantum Machines
• Implementation of room temperatures quantum
devices
• Room temperature quantum coherence
• Very hard to achieve but we can use a mix
of quantum and classical approachMeeting between Top-down
to Bottom -upControlled Coupling
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The Tool Box
Controlled quantum engineering
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Nano crystals (NC) and/or
NV Centers in Nanodiamonds
NV - Energy levels are independent of
nanodiamonds’ sizes
NV- No charge transport
(ZPL=zero phonon line)
Banin and MK nano
NC – controlled charge and
energy transfer
NC – Size distribution influence
strongly the energy spectrum
1Se
1Pe
1Ph
1Sh
Eg
E
r
Fedor Jelezko, Alex Retzker
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Controlled Coupling
Au
Co
s
s
s
s
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Self Assembly Monolayer/ Multi-layersMolecules can be adsorbed on different
substrates
The molecules consist of a Head Group and a
Tail Group
At the initial step fast adsorption occurs
At the second step the monolayer organizes
slowly
Tail
Group
Head
Group
Substrate
Substrate
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Selective Adsorption
(a) (b)
500nm
nm
5 µm
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Hybrid based spintronics
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Spin ElectronicsElectrons have charge and spin 1/2
• Conventional electronic devices
ignore the spin property and rely
strictly on the transport of the
electrical charge of electrons
• Adding the spin degree of
freedom provides new effects,
new capabilities and new
functionalities
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Why Spin?
• Energy and heat- For Spintronics, less
energy
• Quantum effects -It may be a way for
introducing the spin properties to our tool
arsenal.
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Spintronics Devices
The 2007 Nobel Prize in Physics
was awarded to :
Albert Fert and Peter Grünberg
for the discovery of GMR
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Chiral based spintronics
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What do we have to contribute
• Simple and easy to process
Small Cheep Si compatible
From industrial point of view lets take existing magnetic
devices and improve them with our CISS effect
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16SOC is the main cause for CISS
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The CISS effect
The CISS effect- Chiral induced Spin
Selectivity.
PPSS
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EF
Transport Vs Optics
18
EF
Chirality Induced Spin-selectivity (CISS) effect
Mz
FM
Chiral Molecules
SC NCs
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Zuoti Xie, Tal Markus, Sidney Cohen, Zeev Vager,
Rafael Gutierrez, Ron Naaman
Nano Letters, 11, 4652–4655 (2011).
Spin dependent transport through
double stranded DNA
Chiral Induced Spin Selectivity - CISS.
dI/d
V
40 bp
50 bp
26 bp
-8
-4
0
4
8
26 bp
-8
-4
0
4
8
50 bp
-2 -1 0 1 2-8
-4
0
4
8
Voltage (V)
40 bp On Au
-8
-4
0
4
8
Cu
rren
t (n
A)
40 bp
-2 -1 0 1 2
Voltage (V)
40 bp On Au
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Magnetic Memory WO Magnet
Embedded/MRAM
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Memory devices
DRAM - Dynamic random-access memory
SRAM- Static random-access memory
Fast but need constant power
refreshed periodically
Does not need to be periodically refreshed
Slow last for 10 years
All existing memory technologies challenged when critical size is smaller than 45 nm
Flesh memory
We want:
No constant power, long lived, fast, standard technology
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The Charily Molecular
based Universal memory
Fast Dense Non-
VolatilePower efficient
The industry needs are met without compromising in
cost, compatibility to standard Si process &
complexity of design
nm size transport Unit size 10nm stable No back scattering
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Embedded MemoryEmbedded memory is integrated on-chip memory that
supports the logic core to accomplish intended functions
Why is it good??? high-speed and wide bus-width
capability, which eliminates inter-chip communication.
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The Memristor
The missing memristor foundDmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart & R.
Stanley Williams; HP Labs Nature 453, 80-83 (1 May 2008)
Fundamental circuit element, forming a
non-linear relationship between electric
charge and magnetic flux linkage
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Writing cell
Ferromagnetic layer
e- e-e- e-e- e-e-
e-e-
e-
e-
e-
Spin filter
+V
e-
e-e-
e-e- e-
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Reading
Ferromagnetic layer
e-
e-
e-
e-e-
Spin filter
+Low V
0 cell1 cell
Low resistancee-e-
e-
e-Hi resistance
+Low V
e-e-
e-e-
e-e- e-
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Erase
Ferromagnetic layer
e-
e-
e-
e-e-
Filter effect disappears at hi current
+Hi V
0 cell1 cell
Hi current
e-e-
e-e-
e-e- e-
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Method
Pre-adsorption
Si
SiO2SiO2 (PECVD)
Sample Preparation
Adsorption
• Al2O3 is evaporated in
two sessions: 4-5nm
followed by 2nm
• reduces pinholes
• Optical lithography
• 1/5/10mM on 40x50
um2 adsorption areas
Post-adsorption
• Evaporation of Ni 30nm
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Low-power silicon based spintronic transistors with chiral molecular spin filter
Potential difficulty- pin-holes in the organic monolayer.
The problem was solved by evaporating thin layer (3-5 nm) of AlOx on top of the
organic monolayer.
Si based CISS devices
(a) (b)
Nature
Communications 4,
2256 DOI: 10.1038
(2013).
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Memory writing at low temperatures
Magnetization of the device at 2K
Nature Communications 4, 2256
DOI: 10.1038 (2013).
Highlighted in Nature
"Nanotechnology: A memory
device with a twist" 7.8.2013
http://www.natureasia.com/en/re
search/highlight/8613
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Dual direction writing
Spin filter not spin polarizer?
Au
EF
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Memory effect. Writing the at -15V reading at lower voltage. For the same direction
of current the resistance is high and low for the opposite direction of current
Memory effect on a Real Device
Nature Communications 4, 2256
DOI: 10.1038 (2013).
Highlighted in Nature
"Nanotechnology: A memory
device with a twist" 7.8.2013
http://www.natureasia.com/en/re
search/highlight/8613
Breakthrough in memory technologies could bring faster computing, smaller memory device -http://phys.org/news/2013-08-breakthrough-memory-technologies-faster-smaller.html
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Methods
34
•Ni-based Hall effect device (anomalous HE)
532nm
Circular
Polarized
Beam
500n
m
nm
5 µm
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Calibration
35
B(t)
t
27 3
exp
26 3
~ 10 /
~ 5 10 /
z x
xy
eriment
theory
B In
V te
n electrons Meter
n electrons Meter
Paper under review
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Optical CISS
36
• One order of magnitude difference – Spin detector
• Comparing the right hand circular polarization and left hand circular
polarization with the same linear polarization
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Results
37
Dark Light Dark Light
Nano letters 14 6042 (2014).
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Results
38
Li Ye et al. Physical
Review B 85, 240403(R)
(2012)
Dark Light Dark Light
Nano letters 14 6042
(2014).
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Methods
39
•Highly localized magnetization device
(measured with MFM)
5nm Au1.5nm Co
532nm
Circular
Polarized
Beam
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Results
40
Illuminated area
in illuminated sample
Unilluminated area
in illuminated sample
Illuminated area
in reference sample
(no Molecules & no NC)
Nano letters 2014
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Magnetic Nano Memristor
1
2
3
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Spin Based Memristor
-10 -5 0 5 10
-4
-2
0
2
4
Curr
ent
(pA
)
Voltage (Volt)
Forward
Reverse
Magnetized
Erased
writing
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Additional related work
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• Magnetic memory
• Spin transistors
• 3D spin logic
• Charge separation
• Local EMR
Ferromagnetic nano structure
Chiral SChiral R
Contact 1
Contact 3
Contact 2
A scheme of the XOR MSM device
DrainSource
Ferromagnetic
Electrical gating
Gate
CISS Future Applications
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Changing the world of memory
device as we know
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