Physics of Semiconductors 7th 2016.5.30
Shingo Katsumoto Institute for Solid State Physics,
University of Tokyo
Syllabus
1. Classical transport, Transport in pn junctions 2. Junction transistors, field effect transistors 3. Hetero-junctions and quantum structures Quantum wells, wires and dots 4. Coherent quantum transport Landauer-Buttiker formalism Interference devices 5. Single-electron effects Charges and spins in quantum dots 6. Quantum Hall effect 7. Spin physics, spintronics, topological insulators
Lecture notes http://kats.issp.u-tokyo.ac.jp/kats/
http://kats.issp.u-tokyo.ac.jp/kats/semicon3/
Outline today
Classical Transport Boltzmann equation Drift current, diffusion current Drude formula, Einstein relation Electromagnetic effect (Hall effect) Heat transport Thermal conductivity Thermoelectric effect Transport in pn junctions Thermal equilibrium Current-voltage characteristics Response to illumination (minority carrier injection)
Classical transport: Boltzmann equation (1)
π
π
(π,π) 6-dimensional phase space
Distribution function π(π,π, π‘)
ππ
ππ
Classical transport: Boltzmann equation (2)
Boltzmann equation:
Collision term
Relaxation time approximation:
β 0 (stable state) around thermal equilibrium
Expansion to the first order of dt
Relaxation time
Currents: Particle flows(fluxes)
π: Anisotropic distribution = Current
Diffusion current Drift current
Drift current:
Drift current for Fermi-degenerated system
π(π)
π
ππ₯
ππ¦
βππΉ
Drude formula
Maxwell distribution: π0 β π΄exp βπΈ/ππ΅π
: Drude formula for metals
: Drude formula
Diffusion current, Einstein relation
Relaxation time approximation:
: Diffusion constant
Einstein relation
Heat transport, thermoelectric effect Heat flux density:
Thermal conductivity:
Seebeck effect:
A B B
A B B
: Seebeck coefficient
Heat transport, thermoelectric effect (2)
A B
Peltier effect J J
Electric current J : continuous
Heating at A-B interface QAB
Heat flux Q : discontinuous
: Peltier coefficient
Thomson effect
:Thomson coefficient
A J J x
Material specific
Kelvin (Thomson) relations
A B B
π π + Ξπ
Quasi-static
ππ ππ
ππ΄π΅
:First law
:Second law
: Kelvin relations
Unit charge
Seebeck coefficient as material constant
Material specific
Ξπ A
B
Thermocouple
Boltzmann equation and thermoelectric constants
Replace with π0
Boltzmann equation and thermoelectric constants (2)
ππ₯ = 0 Drift current Diffusion current :balance
Peltier device
Ch.2 Transport in pn junctions
Transport in pn junctions
Equilibrium
pn junction : spatially non-uniform
Diffusion current: Entropy increase
Drift current: Internal energy decrease
Balance: Minimize Free energy
pn junction thermodynamics
Consider electrons
+ +
+ + +
donors
eβ
eβ
eβ eβ
eβ
Vacuum for electrons
diffusion
β β β β β
+ + + + +
voltage (polarization) β energy cost
πΉ = π β ππ
Voltage (internal energy cost) Diffusion (entropy)
Minimization of πΉ β Built-in (diffusion) voltage πππ
Built-in potential
Einstein relation
mobility
Rigid band model:
Current-Voltage characteristics equilibrium
External voltage V
Current-Voltage characteristics (2)
π π₯ = ππexp βπΈπ π₯ β ππ(π₯)
πBπ
ππ π₯ = πΈπ π₯ + πBπlnπ(π₯)ππ
quasi-Fermi level
Diffusion equation
Minority carrier diffusion length
πΏπ = π·πππ , πΏβ = π·βππ
generation
ππ π₯ = πΏπ0expπ₯ + π€ππΏπ
+ ππ0
πΈFπ β πΈFπ = ππ
π π β πππ2π·ππΏπππ΄
+π·βπΏβππ·
expπππBπ
β 1
Response to illumination
G(x) =G constant
ππ π₯ = πΏπ0expπ₯ + π€ππΏπ
+ ππ0 + πΊππ
πΏπ0 = ππ0 expππππ΅π
β 1 β πΊππ
π = π0 expππππ΅π
β 1 β ππΊ πΏπ + πΏβ
jm Short circuit current
Vm
fill factor πΉπΉ = ππ πππoc πsc
β +
Majority carrier β ignore increase in density Minority carrier β huge increase in density
Spin Seebeck effect
2016/5/30 26
K. Uchida, S. Takahashi, K. Harii, J. Ieda, W. Koshibae, K. Ando, S. Maekawa and E. Saitoh, Nature 455, 778 (2008).
Spin Seebeck effect
2016/5/30 27
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