Download - MOSFET - TME€¦ · MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according

1

IPAW60R280P7S

Rev.2.0,2017-05-18Final Data Sheet

PG-TO220FullPAKWideCreepage

Drain

Pin 2

Gate

Pin 1

Source

Pin 3

MOSFET600VCoolMOSªP7PowerTransistorTheCoolMOS™7thgenerationplatformisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.The600VCoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellenteaseofuse,e.g.verylowringingtendency,outstandingrobustnessofbodydiodeagainsthardcommutationandexcellentESDcapability.Furthermore,extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompactandmuchcooler.

Features•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness•Significantreductionofswitchingandconductionlosses•ExcellentESDrobustness>2kV(HBM)forallproducts•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²)•LargeportfoliowithgranularRDS(on)selectionqualifiedforavarietyof industrialandconsumergradeapplicationsaccordingtoJEDEC (J-STD20andJESD22)

Benefits•Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages•Simplifiedthermalmanagementduetolowswitchingandconduction losses•Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection•Suitableforawidevarietyofapplicationsandpowerranges

ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 280 mΩ

Qg.typ 18 nC

ID,pulse 36 A

Eoss@400V 2.1 µJ

Body diode di/dt 900 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPAW60R280P7S PG -TO220 FullPAKWideCreepage 60S280P7 see Appendix A

2

600VCoolMOSªP7PowerTransistorIPAW60R280P7S


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

128 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 36 A TC=25°C

Avalanche energy, single pulse EAS - - 38 mJ ID=2.7A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.19 mJ ID=2.7A; VDD=50V; see table 10

Avalanche current, single pulse IAS - - 2.7 A -

MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 24 W TC=25°CStorage temperature Tstg -40 - 150 °C -

Operating junction temperature Tj -40 - 150 °C -

Mounting torque - - - 50 Ncm M2.5 screws

Continuous diode forward current IS - - 12 A TC=25°CDiode pulse current2) IS,pulse - - 36 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=12A,Tj=25°C see table 8

Maximum diode commutation speed dif/dt - - 900 A/µs VDS=0...400V,ISD<=12A,Tj=25°C see table 8

Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min

1) Limited by Tj max. Maximum Duty Cycle D = 0.50; TO-220 equivalent2) Pulse width tp limited by Tj,max3) Identical low side and high side switch with identical Rg

4



2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 5.27 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W -

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

5



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.19mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=600,VGS=0V,Tj=25°C

VDS=600,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.2140.499

0.280- Ω VGS=10V,ID=3.8A,Tj=25°C

VGS=10V,ID=3.8A,Tj=150°C

Gate resistance RG - 7 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 761 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 14 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 27 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 280 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 17 - ns VDD=400V,VGS=13V,ID=3.8A,RG=10Ω;seetable9

Rise time tr - 9 - ns VDD=400V,VGS=13V,ID=3.8A,RG=10Ω;seetable9

Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=13V,ID=3.8A,RG=10Ω;seetable9

Fall time tf - 9 - ns VDD=400V,VGS=13V,ID=3.8A,RG=10Ω;seetable9

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 4 - nC VDD=400V,ID=3.8A,VGS=0to10VGate to drain charge Qgd - 5 - nC VDD=400V,ID=3.8A,VGS=0to10VGate charge total Qg - 18 - nC VDD=400V,ID=3.8A,VGS=0to10VGate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=3.8A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

6



Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3.8A,Tj=25°C

Reverse recovery time trr - 158 - ns VR=400V,IF=2A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 1.1 - µC VR=400V,IF=2A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 14.5 - A VR=400V,IF=2A,diF/dt=100A/µs;see table 8

7



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-5

10-4

10-3

10-2

10-1

100

101

102

10 ms

DC

1 ms

100 µs

10 µs

1 µs

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-5

10-4

10-3

10-2

10-1

100

101

102

DC

10 ms

1 ms

100 µs

10 µs

1 µs

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 10010-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

8



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

10

20

30

40

5020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

5

10

15

20

25

30

35

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 5 10 15 20 25 300.400

0.800

1.200

10 V

6.5 V

6 V

20 V

7 V

5.5 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [no

rmalized]

-50 -25 0 25 50 75 100 125 1500.000

0.500

1.000

1.500

2.000

2.500

3.000

RDS(on)=f(Tj);ID=3.8A;VGS=10V

9



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

10

20

30

40

50

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 5 10 15 200

2

4

6

8

10

120 V 400 V

VGS=f(Qgate);ID=3.8Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1

100

101

102

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

10

20

30

40

EAS=f(Tj);ID=2.7A;VDD=50V

10



Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150540

550

560

570

580

590

600

610

620

630

640

650

660

670

680

690

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

1

2

3

Eoss=f(VDS)

11



5TestCircuits

Table8Diodecharacteristics

Test circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12



6PackageOutlines

MILLIMETERS

4.25 (BSC)

c

D

E

D1

L1

e

L

N

b2

A

A1

b

A2

DIM

0.40

1.70

15.47

9.17

10.70

12.58

3

MIN

4.50

2.34

0.75

2.65

0.609

0.361

0.421

0.016

0.177

0.092

0.030

0.104

0.495

0.60

16.27

11.30

13.38

2.30

4.90

2.74

0.90

2.95

MAX

0.024

3

0.641

0.445

0.527

0.091

INCHES

MIN MAX

0.193

0.108

0.035

0.116

EUROPEAN PROJECTION

ISSUE DATE

0

SCALE

4 mm

REVISION

28-04-2015

01

DOCUMENT NO.

0.167 (BSC)

0.067

0.98 0.0391.26 0.050

øP 3.00 0.1183.30 0.130

b3

b5 3.00 0.118- -

1.00 0.0391.40 0.055

DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS

E

D

D1

L1

H

b2

b

b5

b3

P

c

A

A1

Q

A2

0

2

2

L

0.381 B A

e

Q 3.10 3.50 0.1380.122

H 28.25 1.11229.45 1.159

Z8B00176938

Figure1OutlinePG-TO220FullPAKWideCreepage,dimensionsinmm/inches

13



7AppendixA

Table11RelatedLinks

• IFXCoolMOSP7Webpage:www.infineon.com

• IFXCoolMOSP7applicationnote:www.infineon.com

• IFXCoolMOSP7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/tools

http://www.infineon.com/P7



14



RevisionHistoryIPAW60R280P7S

Revision:2017-05-18,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2017-05-18 Release of final version

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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