✽1 Other sizes are available upon request.The maximum size of ingot is 4 inches in diameter. Size is measured by profile projector.
✽2 Thickness is measured by opto-micrometer. Other thicknesses are available upon request.
✽3 Orientation is measured by X-ray diffractometer.
✽1 Etch pits on (111) A are revealed by Nakagawa etchant (H2O:H2O2:HF=2:2:1).✽2 FWHM is measured by X-ray rocking curve.✽3 Size of Te precipitate (PPT) is measured by IR microscope.
CMYK
Item Size✽1 Thickness✽2Surface
Orientation✽3
UnitSurface Finish
Both SidesPolished
10×10〜50×5040×60
800±50(111)±0.25(211)±0.25(100)±0.25
mm2 µm degree
CdTe and CdZnTe Substrates (Density : 5.86g/cm3)
Dimension
Item Cd1-x Znx Te EPD✽1 FWHM✽2
UnitDopant
Zn 0.01〜0.05±0.01 ≦1E5
molar ratio x cm–2. second
Te precipitate size✽3
≦10, ≦2
None ────── ≦3E5 ≦50 ≦10, ≦2
µm
Crystalline and electrical properties
New equipments for CdZnTe evaluations
(1)Automatic Zn concentration Mapping System
(2)Light scattering System ■Light scattering ■IR micro
PPT≦10µm
PPT-free
✽ Export of CdTe and CdZnTe single crystal from Japan is subject to the approval of the Japanese government due to the export regulation.
■Zn mapping
693.9
684.4
674.7
664.7
654.5
643.4
634.4
624.9
615.0
605.0
594.9
584.3
572.7
563.8
554.8
545.1
535.1
525.1
515.1
504.9
493.8
483.0
474.2
464.9
455.1
445.3
435.3
425.2
415.0
404.4
393.0
384.2
374.9
365.1
355.3
345.3
335.2
325.1
314.5
302.9
293.9
284.8
275.0
265.2
255.3
245.1
235.0
224.4
212.5
203.5
194.4
184.8
175.0
165.1
155.0
144.7
134.0
123.0
113.7
104.3
94.6
84.6
74.5
64.1
52.9
43.4
33.6
23.7
13.5
30mm
20m
m30
mm
30mm
100µm
100µm
10mm
BZ904_2
≦50
05/7/15 出力 初校 -69-M7B1-175L-LINEAR-COMP
InP Single Crystal Substrates
InP HB Polycrystal
CdTe and CdZnTe Single Crystal Substrates
InP and CdTeSingle Crystal Substrates
2013.03
Sales offices
JAPAN JX Nippon Mining & Metals Corporation Compound Semiconductor Department 6-3, Otemachi 2-chome, Chiyoda-ku, Tokyo 100-8164, Japan TEL:+81-3-5299-7286 FAX:+81-3-5299-7349
NORTH AMERICA JX Nippon Mining & Metals USA, Inc. 125 North Price Road, Chandler Arizona 85224 U.S.A. TEL:+1-480-732-9857 FAX:+1-480-899-0779 [email protected]
EUROPE JX Nippon Mining & Metals Europe GmbH Kaiserstrasse 7, D-60311 Frankfurt am Main, Germany TEL:+49-(0)-69-2193653-0 FAX:+49-(0)-69-2193653-20 [email protected]
TAIWAN Nikko Metals Taiwan Co., Ltd / Bade Works No. 62, You-Lian St., Bade City, Tao-Yuan, Taiwan 33449 R.O.C. TEL:+886-3-368-2303 FAX:+886-3-365-2555
SINGAPORE JX Nippon Mining & Metals Singapore Pte. Ltd. 16 Raffles Quay, #33-04 Hong Leong Building Singapore 048581 TEL:+65-6225-5413 FAX:+65-6227-0373
Works Isohara Works 187-4, Usuba, Hanakawa-cho, Kitaibaraki-shi, Ibaraki-ken 319-1535, Japan TEL:+81-293-43-5111 FAX:+81-293-43-5140
www.nmm.jx-group.co.jp
CMYK
■2-inch-diameterCrystalline and Electrical Properties✽1
Type Dopant EPD(cm–2)(See below A.) DF(Defect Free)area(cm2, See below B.) c/c(cm–3) Mobility(cm2/Vs) Resistivity(Ω・cm)
n Sn≦5×104
≦1×104
≦5×103
──────
──────
≦5×104
≦1×104
≦5×104
────── (0.5〜6)×1018 ────── ──────
n S≧ 10(59.4%)≧ 15(87%).4
(2〜10)×1018 ────── ──────
p Zn≧ 10(59.4%)≧ 15(87%).4
(3〜6)×1018 ────── ──────
S.I. Fe ────── ────── ────── ≧ 1×106
n none ────── ≦1×1016 ≧ 4×103 ──────
InP Single Crystal Substrates (Density : 4.79g/cm3)
✽1 Other specifications are available upon request.
1. Dislocation etch pit densities are
measured at 13 points.
2. Area weighted average of the
dislocation densities is calculated.
A.13 Points Average B.DF Area Measurement (In Case of Area Guarantee)
1. Dislocation etch pit densities of 69 points shown as right
are counted.
2. DF is defined as EPD less than 500cm–2
3. Maximum DF area measured by this method is 17.25cm2
[011̄]
[001̄]
[01̄1̄]
5mm
5mm
=0.25cm2
Item
UnitSurface Finish
One SideMirror-Polished
Both SidesMirror-Polished
50.0±0.5
50.0±0.5
350±20
350±20
15±2
15±2
8±2
8±2
≦10
≦10
≦15
≦15
Diameter
mm µm mm mm µm µm
Thickness✽1OrientationFlat Length
IndexFlat Length
TV✽2 SORI✽3
✽1 Thickness is measured at the center point of the wafer by opto micrometer.✽2 Thickness Variation (TV) is the maximum-minimum of five points within the wafer measured by opto micrometer.✽3 SORI is measured by laser interferometer flatness tester.
InP Single Crystal Substrates Common Specifications
InP HB Polycrystal
1. Orientation
Surface orientation (100)±0.2º or (100)±0.05º
Surface off orientation is available upon request.
Orientation of flat OF : (01-1-)±1º or (01
-1-)±0.1º
IF : (01-1-)±2º
Cleaved OF is available upon request.
2. Laser marking based on SEMI standard is available.
3. Individual package,as well as package in N2 gas are
available.
4. Etch-and-pack in N2 gas is available.
5. Rectangular wafers are available.
Above specification is of JX' standard.
If other specifications are required, please inquire us.
Orientation
Rectangular Wafer
Type : European/Japanese
■Standard Specifications
[01̄1̄]
[001̄]
[011̄] [01̄1]
[01̄0]
[011]
[010] [001]
(11̄1̄)A
(111)A
(111̄)B
(100)
(111)
(100)
(11̄1)B
Face of ElementⅢ(In)
OF
OF
IF
IF
Face of ElementⅤ(P)
Polish Face
(101̄) (11̄0)
(110) (101)
(010) (001)(011)
(110) (101)
Length of V Groove Surface
Length of Dovetail Groove Surface
Dovetail Etch
IF(Secondary) OF(Primary)
Front Side
V Groove
(01̄1) (01̄1̄)
(100)
1. Electrical Properties
Carrier Concentration : ≦3×1015cm–3
(Measured at 300K)
2. Dimensions
Size : D-shape, approx.50×60mm2
Thickness : 1.0±0.1mm Weight : approx.10g
3. Surface Finish : As cut or as etched after cutting.
4. Packaging
Individual package by glassine
~– 60mm
~ –50
mm
InP and CdTe Single Crystal Substrates
InP AND CdTe SINGLE CRYSTAL SUBSTRATES
4/11 出力初校 *71-2
■3-inch and 4-inch diameterCrystalline, Electrical Properties, Dimension and Flatness
Type Dopant EPD(cm–2) c/c(cm–3) Mobility(cm2/Vs) Resistivity(Ω・cm)n S ≦5×103 (2〜10)×1018
S.I. Fe ≦IE5, ≦5E4 ────── ──────────── ──────
≧ IE6
Item
UnitSurface Finish
One Side Mirror-Polished
Both Sides Mirror-Polished
76.2±0.3
76.2±0.3
625±20
600±20
22±1
22±1
11±1
11±1
≦8
≦5
≦10
≦10
Diameter
mm µm mm mm µm µm
Thickness✽1OrientationFlat Length
IndexFlat Length
TTV✽2 Warp✽2
✽1 Other thicknesses are available upon request.✽2 TTV and Warp are measured by SuperSortTM
/ Ultra SortTM, SuperSortTM / Ultra SortTM is the registrated mark of Tropel Corp.
Both Sides Mirror-Polished 100.0±0.3 625±20 32.5±1 18±1 ≦5, ≦8 ≦10, ≦15
CMYK
■2-inch-diameterCrystalline and Electrical Properties✽1
Type Dopant EPD(cm–2)(See below A.) DF(Defect Free)area(cm2, See below B.) c/c(cm–3) Mobility(cm2/Vs) Resistivity(Ω・cm)
n Sn≦5×104
≦1×104
≦5×103
──────
──────
≦5×104
≦1×104
≦5×104
────── (0.5〜6)×1018 ────── ──────
n S≧ 10(59.4%)≧ 15(87%).4
(2〜10)×1018 ────── ──────
p Zn≧ 10(59.4%)≧ 15(87%).4
(3〜6)×1018 ────── ──────
S.I. Fe ────── ────── ────── ≧ 1×106
n none ────── ≦1×1016 ≧ 4×103 ──────
InP Single Crystal Substrates (Density : 4.79g/cm3)
✽1 Other specifications are available upon request.
1. Dislocation etch pit densities are
measured at 13 points.
2. Area weighted average of the
dislocation densities is calculated.
A.13 Points Average B.DF Area Measurement (In Case of Area Guarantee)
1. Dislocation etch pit densities of 69 points shown as right
are counted.
2. DF is defined as EPD less than 500cm–2
3. Maximum DF area measured by this method is 17.25cm2
[011̄]
[001̄]
[01̄1̄]
5mm
5mm
=0.25cm2
Item
UnitSurface Finish
One SideMirror-Polished
Both SidesMirror-Polished
50.0±0.5
50.0±0.5
350±20
350±20
15±2
15±2
8±2
8±2
≦10
≦10
≦15
≦15
Diameter
mm µm mm mm µm µm
Thickness✽1OrientationFlat Length
IndexFlat Length
TV✽2 SORI✽3
✽1 Thickness is measured at the center point of the wafer by opto micrometer.✽2 Thickness Variation (TV) is the maximum-minimum of five points within the wafer measured by opto micrometer.✽3 SORI is measured by laser interferometer flatness tester.
InP Single Crystal Substrates Common Specifications
InP HB Polycrystal
1. Orientation
Surface orientation (100)±0.2º or (100)±0.05º
Surface off orientation is available upon request.
Orientation of flat OF : (01-1-)±1º or (01
-1-)±0.1º
IF : (01-1-)±2º
Cleaved OF is available upon request.
2. Laser marking based on SEMI standard is available.
3. Individual package,as well as package in N2 gas are
available.
4. Etch-and-pack in N2 gas is available.
5. Rectangular wafers are available.
Above specification is of JX' standard.
If other specifications are required, please inquire us.
Orientation
Rectangular Wafer
Type : European/Japanese
■Standard Specifications
[01̄1̄]
[001̄]
[011̄] [01̄1]
[01̄0]
[011]
[010] [001]
(11̄1̄)A
(111)A
(111̄)B
(100)
(111)
(100)
(11̄1)B
Face of ElementⅢ(In)
OF
OF
IF
IF
Face of ElementⅤ(P)
Polish Face
(101̄) (11̄0)
(110) (101)
(010) (001)(011)
(110) (101)
Length of V Groove Surface
Length of Dovetail Groove Surface
Dovetail Etch
IF(Secondary) OF(Primary)
Front Side
V Groove
(01̄1) (01̄1̄)
(100)
1. Electrical Properties
Carrier Concentration : ≦3×1015cm–3
(Measured at 300K)
2. Dimensions
Size : D-shape, approx.50×60mm2
Thickness : 1.0±0.1mm Weight : approx.10g
3. Surface Finish : As cut or as etched after cutting.
4. Packaging
Individual package by glassine
~– 60mm
~ –50
mm
InP and CdTe Single Crystal Substrates
InP AND CdTe SINGLE CRYSTAL SUBSTRATES
4/11 出力初校 *71-2
■3-inch and 4-inch diameterCrystalline, Electrical Properties, Dimension and Flatness
Type Dopant EPD(cm–2) c/c(cm–3) Mobility(cm2/Vs) Resistivity(Ω・cm)n S ≦5×103 (2〜10)×1018
S.I. Fe ≦IE5, ≦5E4 ────── ──────────── ──────
≧ IE6
Item
UnitSurface Finish
One Side Mirror-Polished
Both Sides Mirror-Polished
76.2±0.3
76.2±0.3
625±20
600±20
22±1
22±1
11±1
11±1
≦8
≦5
≦10
≦10
Diameter
mm µm mm mm µm µm
Thickness✽1OrientationFlat Length
IndexFlat Length
TTV✽2 Warp✽2
✽1 Other thicknesses are available upon request.✽2 TTV and Warp are measured by SuperSortTM
/ Ultra SortTM, SuperSortTM / Ultra SortTM is the registrated mark of Tropel Corp.
Both Sides Mirror-Polished 100.0±0.3 625±20 32.5±1 18±1 ≦5, ≦8 ≦10, ≦15
CMYK
■2-inch-diameterCrystalline and Electrical Properties✽1
Type Dopant EPD(cm–2)(See below A.) DF(Defect Free)area(cm2, See below B.) c/c(cm–3) Mobility(cm2/Vs) Resistivity(Ω・cm)
n Sn≦5×104
≦1×104
≦5×103
──────
──────
≦5×104
≦1×104
≦5×104
────── (0.5〜6)×1018 ────── ──────
n S≧ 10(59.4%)≧ 15(87%).4
(2〜10)×1018 ────── ──────
p Zn≧ 10(59.4%)≧ 15(87%).4
(3〜6)×1018 ────── ──────
S.I. Fe ────── ────── ────── ≧ 1×106
n none ────── ≦1×1016 ≧ 4×103 ──────
InP Single Crystal Substrates (Density : 4.79g/cm3)
✽1 Other specifications are available upon request.
1. Dislocation etch pit densities are
measured at 13 points.
2. Area weighted average of the
dislocation densities is calculated.
A.13 Points Average B.DF Area Measurement (In Case of Area Guarantee)
1. Dislocation etch pit densities of 69 points shown as right
are counted.
2. DF is defined as EPD less than 500cm–2
3. Maximum DF area measured by this method is 17.25cm2
[011̄]
[001̄]
[01̄1̄]
5mm
5mm
=0.25cm2
Item
UnitSurface Finish
One SideMirror-Polished
Both SidesMirror-Polished
50.0±0.5
50.0±0.5
350±20
350±20
15±2
15±2
8±2
8±2
≦10
≦10
≦15
≦15
Diameter
mm µm mm mm µm µm
Thickness✽1OrientationFlat Length
IndexFlat Length
TV✽2 SORI✽3
✽1 Thickness is measured at the center point of the wafer by opto micrometer.✽2 Thickness Variation (TV) is the maximum-minimum of five points within the wafer measured by opto micrometer.✽3 SORI is measured by laser interferometer flatness tester.
InP Single Crystal Substrates Common Specifications
InP HB Polycrystal
1. Orientation
Surface orientation (100)±0.2º or (100)±0.05º
Surface off orientation is available upon request.
Orientation of flat OF : (01-1-)±1º or (01
-1-)±0.1º
IF : (01-1-)±2º
Cleaved OF is available upon request.
2. Laser marking based on SEMI standard is available.
3. Individual package,as well as package in N2 gas are
available.
4. Etch-and-pack in N2 gas is available.
5. Rectangular wafers are available.
Above specification is of JX' standard.
If other specifications are required, please inquire us.
Orientation
Rectangular Wafer
Type : European/Japanese
■Standard Specifications
[01̄1̄]
[001̄]
[011̄] [01̄1]
[01̄0]
[011]
[010] [001]
(11̄1̄)A
(111)A
(111̄)B
(100)
(111)
(100)
(11̄1)B
Face of ElementⅢ(In)
OF
OF
IF
IF
Face of ElementⅤ(P)
Polish Face
(101̄) (11̄0)
(110) (101)
(010) (001)(011)
(110) (101)
Length of V Groove Surface
Length of Dovetail Groove Surface
Dovetail Etch
IF(Secondary) OF(Primary)
Front Side
V Groove
(01̄1) (01̄1̄)
(100)
1. Electrical Properties
Carrier Concentration : ≦3×1015cm–3
(Measured at 300K)
2. Dimensions
Size : D-shape, approx.50×60mm2
Thickness : 1.0±0.1mm Weight : approx.10g
3. Surface Finish : As cut or as etched after cutting.
4. Packaging
Individual package by glassine
~– 60mm
~ –50
mm
InP and CdTe Single Crystal SubstratesInP AND CdTe SINGLE CRYSTAL SUBSTRATES
4/11 出力初校 *71-2
■3-inch and 4-inch diameterCrystalline, Electrical Properties, Dimension and Flatness
Type Dopant EPD(cm–2) c/c(cm–3) Mobility(cm2/Vs) Resistivity(Ω・cm)n S ≦5×103 (2〜10)×1018
S.I. Fe ≦IE5, ≦5E4 ────── ──────────── ──────
≧ IE6
Item
UnitSurface Finish
One Side Mirror-Polished
Both Sides Mirror-Polished
76.2±0.3
76.2±0.3
625±20
600±20
22±1
22±1
11±1
11±1
≦8
≦5
≦10
≦10
Diameter
mm µm mm mm µm µm
Thickness✽1OrientationFlat Length
IndexFlat Length
TTV✽2 Warp✽2
✽1 Other thicknesses are available upon request.✽2 TTV and Warp are measured by SuperSortTM
/ Ultra SortTM, SuperSortTM / Ultra SortTM is the registrated mark of Tropel Corp.
Both Sides Mirror-Polished 100.0±0.3 625±20 32.5±1 18±1 ≦5, ≦8 ≦10, ≦15
✽1 Other sizes are available upon request.The maximum size of ingot is 4 inches in diameter. Size is measured by profile projector.
✽2 Thickness is measured by opto-micrometer. Other thicknesses are available upon request.
✽3 Orientation is measured by X-ray diffractometer.
✽1 Etch pits on (111) A are revealed by Nakagawa etchant (H2O:H2O2:HF=2:2:1).✽2 FWHM is measured by X-ray rocking curve.✽3 Size of Te precipitate (PPT) is measured by IR microscope.
CMYK
Item Size✽1 Thickness✽2Surface
Orientation✽3
UnitSurface Finish
Both SidesPolished
10×10〜50×5040×60
800±50(111)±0.25(211)±0.25(100)±0.25
mm2 µm degree
CdTe and CdZnTe Substrates (Density : 5.86g/cm3)
Dimension
Item Cd1-x Znx Te EPD✽1 FWHM✽2
UnitDopant
Zn 0.01〜0.05±0.01 ≦1E5
molar ratio x cm–2. second
Te precipitate size✽3
≦10, ≦2
None ────── ≦3E5 ≦50 ≦10, ≦2
µm
Crystalline and electrical properties
New equipments for CdZnTe evaluations
(1)Automatic Zn concentration Mapping System
(2)Light scattering System ■Light scattering ■IR micro
PPT≦10µm
PPT-free
✽ Export of CdTe and CdZnTe single crystal from Japan is subject to the approval of the Japanese government due to the export regulation.
■Zn mapping
693.9
684.4
674.7
664.7
654.5
643.4
634.4
624.9
615.0
605.0
594.9
584.3
572.7
563.8
554.8
545.1
535.1
525.1
515.1
504.9
493.8
483.0
474.2
464.9
455.1
445.3
435.3
425.2
415.0
404.4
393.0
384.2
374.9
365.1
355.3
345.3
335.2
325.1
314.5
302.9
293.9
284.8
275.0
265.2
255.3
245.1
235.0
224.4
212.5
203.5
194.4
184.8
175.0
165.1
155.0
144.7
134.0
123.0
113.7
104.3
94.6
84.6
74.5
64.1
52.9
43.4
33.6
23.7
13.5
30mm
20m
m30
mm
30mm
100µm
100µm
10mm
BZ904_2
≦50
05/7/15 出力 初校 -69-M7B1-175L-LINEAR-COMP
InP Single Crystal Substrates
InP HB Polycrystal
CdTe and CdZnTe Single Crystal Substrates
InP and CdTeSingle Crystal Substrates
2013.03
Sales offices
JAPAN JX Nippon Mining & Metals Corporation Compound Semiconductor Department 6-3, Otemachi 2-chome, Chiyoda-ku, Tokyo 100-8164, Japan TEL:+81-3-5299-7286 FAX:+81-3-5299-7349
NORTH AMERICA JX Nippon Mining & Metals USA, Inc. 125 North Price Road, Chandler Arizona 85224 U.S.A. TEL:+1-480-732-9857 FAX:+1-480-899-0779 [email protected]
EUROPE JX Nippon Mining & Metals Europe GmbH Kaiserstrasse 7, D-60311 Frankfurt am Main, Germany TEL:+49-(0)-69-2193653-0 FAX:+49-(0)-69-2193653-20 [email protected]
TAIWAN Nikko Metals Taiwan Co., Ltd / Bade Works No. 62, You-Lian St., Bade City, Tao-Yuan, Taiwan 33449 R.O.C. TEL:+886-3-368-2303 FAX:+886-3-365-2555
SINGAPORE JX Nippon Mining & Metals Singapore Pte. Ltd. 16 Raffles Quay, #33-04 Hong Leong Building Singapore 048581 TEL:+65-6225-5413 FAX:+65-6227-0373
Works Isohara Works 187-4, Usuba, Hanakawa-cho, Kitaibaraki-shi, Ibaraki-ken 319-1535, Japan TEL:+81-293-43-5111 FAX:+81-293-43-5140
www.nmm.jx-group.co.jp
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