Dr. Thomas Gädda
Enabling Silicon and Metal Oxide Materials
for Dielectric and Pattern Transfer Applications
Director
technological leader in development and production of advanced siloxane and metal oxide monomers and polymers.
WHO WE ARE.
We are one of the few global players that have an proven and audited track record at producing and
monitoring specialty materials at PPT purity level at our 3000sqm Clean Room facility in Helsinki.
Our Materials are being used in the latest semiconductor devices used for ultra high
definition and portable gadgets. Our customers include tier-1 chemical and
semiconductor manufacturing companies.
With over 57 patents with 42 issued and 15 pending, we continue to invest in
R&D and grow our knowledge in the field.
audited track record
2
PIBOND CONFIDENTIAL INFORMATION
+3,000 m2
of space
+100 tons/year
capacity with
scope double
capacity
Clean room
production:
Class 10/100
Explosion
proof HVAC
units
Back up
generators for
uninterrupted
power
availability
Extensive in-
house
semiconductor
process testing
capabilities
State of the art
automation
system
Temperature
and humidity
controlled
Scalable
Operations
Production
approved by
multiple Tier 1
Semiconductor
companies
Fully audited
production
track record
ISO 9001 and
ISO 14001
certified
PRODUCTION FACILITY.
TECHNOLOGY PLATFORMS.
SG Series• Organo-siloxane dielectrics
• In high volumes for sub-Al
• Extending uLK and conformal
dielectrics
SH Series• Siloxane hardmask
• First used at 65nm NAND Flash
• Continuous improvement and now
at 16nm Flash NAND and 10nm
Logic
SC Series• Optical organo-siloxane dielectrics
• Commercial production in CIS-FSI
• Extending BSI and WLO CISs
• Silicon photonics
SAP Series• Material qualified for MEMS and
testing in several fabs for sensors and
IC fabs
• Low cost alternative for ALD and
better CD control to CVD
PiBondTechnology
OUR MARKETS.
MEMS
3D IC & TSV
Qualified and in pilot• Metal oxide hardmasks for DRIE
Product Developed• Extension of hardmask
for TSV / Interposer
etch process
simplification
LOGIC
MEMORY
Qualified and in Device,• Organosiloxane dielectrics
• Si-HM in qualification stage
Qualified and in Device• In NAND and flash memory
• 28 16nm nodes
OPTICAL SENSORS
Qualified and in Device• Optical dielectrics
• CIS / Si Photonics
PiBond Dielectrics
6
Optical siloxane dielectrics Silsesquioxane dielectrics
Several thickness formulations
Leading range refractive of index
CVD SiO2 replacement
Gap fill and planarization control
Conformal and patternablelens
filter
High index material (n=1.68)
SiO2
Cu
1 m
lens
filter
High index material (n=1.68)
SiO2
Cu
1 m 5µm lines / spaces
PRODUCT
Cure temp.
range
[°C]
Refractive index
at 633nm
Dielectric
constant
Film thickness
max. [µm]
Hardness Modulus
[GPa]
SC 200 150 - 250 1.43 3.6 >5 0.2 3.3
SC 300 150 - 250 1.65 3.6 >15 0.4 7.0
SC 400 200 - 400 1.65 3.2 1.6 0.6 9.5
SC 500 150 - 400 1.23 2.5 1.0 0.7 5.6
SC 800 150 - 300 1.80 - 1.93 7.5 ~5 0.8 19
Main benefits:
• Demonstrated performance improvement in practise and through modelling
• Industry leading RI range from 1.2 up to 1.9+
• Application dependent planarization or conformality control
• Excellent thermal and optical stability
SC Products extend to 3D-IOC (hybrid and heterogenous integration)
7
SC products
• Several SC 500 (low RI material) product formulations ranging from extremely conformal to
planarizing coatings
• SC 200 is a planarizing
passivation coating
8
SC products - features
SC 500, planarizing SC 500K, conformal SC 200, planarizing
• SC 300 and 400 series products are planarizing materials
• High refractive index with excellent gap fill capability
▪ High thermal resistance
▪ Readily adoptable for Cu interconnect processes
▪ CMP compatible
▪ Excellent gap fill and adhesion
▪ Excellent transparency at visible wavelengths with high refractive
index
lens
filter
High index material (n=1.68)
SiO2
Cu
1 m
lens
filter
High index material (n=1.68)
SiO2
Cu
1 m
ultra high RI coatings
9
• High index of refraction – range: 1.65 – 1.93
• Excellent transmittance
• Low film shrinkage during cure
• Minimal haze
SC 800p F Value
Thickness (nm) 574
N @ 633nm 1.93
Shrinkage (130-200C) 2
Haze(D1003-97)(A) 0.13
Haze(D1003-97)(C) 0.14
@450nm @633nm
2.02 1.93
1.93 1.85
1.85 1.79
1.69 1.65
1.52 1.50
1.43 1.42
1.26 1.25
• SG-Series – MSQ dielectric
• Designed for easy insertion into Partial Etch Back and
Total Etch Back planarization processes found in both
PMD and IMD Applications. Served in HVM fore
+10years.
• SX-Series – MSQ-HSQ mixed siloxane dielectric
• Partial and total etchback planarization processes, Sub-
Al IMD layer, BPSG leveling. Defect free fill of features
as narrow as 50 nm in width and below
• ST Series – HSQ dielectric
• HSQ polymer formulated to meet requirement s of high
thermal budget applications e.g. Shallow Trench
Isolation and PMD Process
PiBond dielectrics
10
Product kFTK
[µm]S%
SG
products3.5-4.1 0.6-1.6 3-9
SX
products2.9 2.0 <5
ST
products3.8 0.5 ~15
• Products designed for easy insertion into Partial Etch Back
and Total Etch Back planarization processes
• Excellent etch back planarization selectivity to CVD SiO2.
• Several different dielectric constants
• Designed for flawless gap fill
• Wide thickness range – up to 2µm CVD-like SOD!
Lo
ca
lPla
na
rizatio
n
Double coated SG200
Single coated SG200
Single coated SG300
Single coated SG40011
100 nm gap 300 nm gap30 nm gap
Gap fill
12
SX 800P – patternable high temperature siloxane
• High sensitivity at low doses
• Developed with industry standard 2.38w%
TMAH
• Resolution 4:1
• Up to 2µm thickness, 475C cure
SX 800P B12 25 mJ SX 800P B12 100 mJSX 800P B12 50 mJ SX 800P B12 75 mJ
4µm via open 7.5µm via open 8.5µm via open 9µm via open
*Softbake: 100°C/1min, Exposure: Karl Suss MA45, PEB 100°C/1min, Develop 2.38w% TMAH 30sec.
5µm lines / spaces, 52° view
PiBond patterning materials
13
Traditional hard masks Metal oxide hard masks
Si-HM and SiBARC
SOC and novel MOx-HM
DRIE and TSV etch hard mask
Novel MOx materials
litho underlayer offering
PiBond litho solutions.
Siloxane and metal oxide chemistries for reverse
patterning schemes
Spin On Carbon for high and low temperature
process schemes
Node shrink through extremely conformal high
silicon content polymers
High silicon content hard masks
Silicon anti reflective coatings with variable optical
constants for 248nm and 193nm patterning
Extension of SAP metal oxide hard mask
technology toward EUV lithography
PiBond SH Series Si-BARC and Si-HM have served the industry for a decade
New Products:
- Reverse planarizing and conformal coatings benefit: ALD replacement for reverse, SADP processes
- Novel metal oxide materials for EUV lithography benefit: litho stack simplification
- High temperature SOC benefit: ACL replacement for increased throughput
14
SH ProductsSilicon Hard Masks
Case examples: SH 193 - SH 248D
Material Cure n k Si-content
SH 248D 230°C 1.52 – 1.56 0.34 – 0.42 31 – 33%
SH 193D 230°C 1.68 – 1.73 0.35 – 0.43 37 – 39%
SH 193U 230°C 1.63 – 1.67 0.13 – 0.15 41 – 44%
15
SH 248D shows stable etch rates as a function of:
bake temperature
aging
product bottle warm up
Bake Condition Etch rate [nm/min]
200°C / 90s 195
220°C / 90s 195
230°C / 90s 194
240°C / 60s 195
Sample Etch rate [nm/min]
+4C, 3 months 185
+23C, 3 months 188
+40C, 3 months 193
Warm up time Etch rate [nm/min]
0h 196
3h 194
24h 198
Table 2. Etch rate as a function of aging of material.
Table 1. Etch rate as a function of bake temperature.
Table 3. Etch rate vs. bottle warm up.
Reference etch rates:
PECVD SiO2: 84nm/min
LPCVD (770C) Si3N4: 103nm/min
SH 248D – on wafer performance
• CLk-888 (JTBaker) and N-SC200 (Nagase) strippers confirmed to becompatible with SH 248D
• Both strippers compatible with low k dielectric and damascene-Cu
• Strippers show no effect to CVD SiO2 and SiNx
Figure. SEM of N-SC200 during strip test.
Stripper
Cu etch rate
[nm/min]
@ 40C
BD-II etch
rate
[nm/min]
@ 40C
PECVD SiO2
etch rate
[nm/min]
@ 40C
SiNx
etch rate
[nm/min]
@ 40C
CLk-888 3.0 <0.1 0.0 0.0
N-SC200 0.8 <0.1 0.0 0.0
N-SC206 0.2 <0.1 0.0 0.0
N-SC207 0.2 <0.1 0.0 0.0
Figure. Film removal rate with different strippers.
SH 248D – strip and clean
• Metal-oxide hard mask chemistry comprises patented chemistry
• Proprietary methodology to control metal, metalloid, oxygen and carbon ratios
• Adjustable optical properties for demanding resolution requirements(e.g. EUV, 193nm, 248nm)
• Adjustable etch selectivity through hard mask chemistry – up to >1:100,000 to Si
• Strip and clean fairly adjustable according to process and device requirements
SAP Products – outline
18
SEM images from SAP 110 test
SAP Products – etch case results
19
PiBond approach to EUV materials has been to extend SAP 100 chemistry platform
Potential use: as resist, as underlayer or as a reverse tone material
20
MOx-SiOx hard masks development
MOx nanoparticles Mixed Metal Oxides
Main benefits
minimized organic content
better etch selectivity to organic layers
no particle size limitation yields improved LER/LWR
minimized organic content
better etch selectivity
improved sensitivity
DISCLAIMER
The Presentation
This presentation is based on internal Company reports and technical information believed to be reliable, but neither the Company, its directors or employees make any
representation or warranty to its accuracy, completeness or currency and, as such, no reliance may be placed for any purpose whatsoever on the information contained in
this presentation. The Company accepts no obligation to correct or update the information or opinions expressed in it. Opinions expressed are subject to change without
notice and accurately reflect the views of the Company at the time of presenting. Save in the case of fraud, no liability is accepted for any loss, cost or damage suffered or
incurred as a result of the reliance on such information, opinions or beliefs.
This presentation may contain certain forward-looking statements. These statements relate to future events or future performance and reflect management’s expectations
regarding the Company’s growth, results of operations, performance and business prospects and opportunities. Such forward-looking statements reflect management’s
current beliefs, are based on information currently available to management and are based on reasonable assumptions as of this date. No assurance, however, can be
given that the expectations will be achieved. A number of factors could cause actual results to differ materially from the projections, anticipated results or other
expectations expressed in this presentation. While the Company makes these forward-looking statements in good faith, neither the Company, nor its directors and
management, can guarantee that the anticipated future results will be achieved.
This presentation is confidential and is being supplied to you for your own information. It may not directly or indirectly be reproduced, further distributed to any person or
published, in whole or in part, for any purpose whatsoever.
Thank You!
21
Top Related