Memory and MobilityMemory and Mobility
The New Generation of LowThe New Generation of Low--Power Power Memories Intended for the Memories Intended for the
Smartphone and Tablet Markets Smartphone and Tablet Markets ppand Their Relative Positioningand Their Relative Positioning
Memory Matters @ CES 2012 -Eric Spanneut - Micron Technology
An increasing number of memory interfaces are used An increasing number of memory interfaces are used to address the highto address the high--end lowend low--power mobile device power mobile device
marketmarket2007 2015
NAND
market .market .
Non-Volatile Memory
Interfaces
NORNAND
NANDe.MMC
UFSSATAInterfaces SATA
LPDDR2 NVMLPDDR1
Volatile Memory LPDDR1
LPDDR2LPDDR3Wide IOInterfaces Wide IO
LPDDR4*DDRx “low-voltage”
* Not yet proposed - placeholder for future LP-DRAM interface.
New categories of mobile devices are emerging New categories of mobile devices are emerging in the market placein the market placein the market place.in the market place.
100%“PC Market” - form factor changes 60% Thin/Light
& T bl t
75%
Tablet
& Tablet
50%
Thin/light notebookNotebook
NetbookThese new categories
25% Desktop
grepresent
new targets for low-power
0%2008 2009 2010 2011 2012 2013 2014 2015
power memories!
Source: Micron Marketing, Gartner, Intel
Each segment of the highEach segment of the high--end mobile market end mobile market has several memory interface alternatives.has several memory interface alternatives.has several memory interface alternatives. has several memory interface alternatives.
Non VolatileMillion units
Volatile Volatile
SATA LPDDR3, DDRx, LPDDR4, Wide IO
10001200
1400
Thin/light Notebook
e.MMC, UFS, NAND, SATA
LPDDR3, DDRx, LPDDR4, Wide IO
e.MMC, NANDUFS
LPDDR3, DDRx, Wide IO?, LPDDR4?
600800
1000Tablet
Entry Tablet
e.MMCUFS, NAND
LPDDR3, Wide IO, LPDDR4
e.MMC, NAND LPDDR1, LPDDR2,0
200400 Smartphone
Entry Smartphone
UFS?,
LPDDR30
2012 2015 Source: Micron Marketing
The value chain has strong inertia, The value chain has strong inertia, giving a long tail to legacy interfaces.giving a long tail to legacy interfaces.
O/S Chi t MCarriers OEMs O/S Vendors
ChipsetVendors
MemoryVendors
Long qualification cycles
Reuse of legacy chipsets
Slow in integrating latest JEDEC advancement
Reuse of legacy memory controllers
Recovery of investmentcycles chipsets advancement
scontrollers
• Almost all phones using e.MMC are still on the 4.2/4.3 standard!
• LPDDR1 still extremely strong in the entry smartphone segment!y g y g
DRAM Technology TrendsDRAM Technology TrendsLPDDR4/WideIO2
h pe
r die
) LPDDR4/WideIO2 [8Gb – 32Gb] TBD
DDR4 [4Gb – 32Gb] 6.4GB/s
s LPDDR3 [4Gb – 16Gb] 6 4GB/s
WideIO [4Gb – 32Gb] 12.8GB/s
band
wid
thar
t Pho
nes LPDDR3 [4Gb – 16Gb] 6.4GB/s
y (d
ensi
ty/b
DDR3Lm [1Gb – 8Gb] 3.7GB/s
Sm LPDDR2 [64Mb – 8Gb] 4.3GB/s
echn
olog
y
DDR3 [1Gb – 4Gb] 4.3GB/s
LPDDR1 [64Mb – 2Gb] 1.6GB/s
’06 ’07 ’08 ’09 ’10 ’11 ’12 ’13 ’14 ’15 ’16 ’17
Te
January 12
’06 ’07 ’08 ’09 ’10 ’11 ’12 ’13 ’14 ’15 ’16 ’17
Volatile memories Volatile memories -- Breakdown by interface in the Breakdown by interface in the Smartphone & Tablet spaces (Units)Smartphone & Tablet spaces (Units)
Breakdown by Interface
100%
60%
80%DDRxLPDDR4
20%
40%
60% LPDDR4Wide IOLPDDR3LPDDR2
S Mi M k ti
0%
20%
2012 2013 2014 2015
LPDDR1
• LPDDR2 will gradually replace LPDDR1 in the entry smartphone market.
LPDDR3 should see major growth fueled by insatiable demand for
Source: Micron Marketing2012 2013 2014 2015
• LPDDR3 should see major growth fueled by insatiable demand for bandwidth.
Volatile memories Volatile memories -- Breakdown by Interface in the Breakdown by Interface in the Smartphone & Tablet Spaces (Gb Equiv.)Smartphone & Tablet Spaces (Gb Equiv.)
vs
DDR
80%
100%
f Gb Eq
uiv
DDRx
LPDDR4
40%
60%
centage o WideIO
LPDDR3
S Mi M k ti
0%
20%
Perc LPDDR2
LPDDR1
• Further sub-segmentation to be expected with a wide variety of supported densities.
Non binary densities expected
Source: Micron Marketing2011 2012 2013 2014 2015
• Non-binary densities expected.
Volatile memories: Criteria of selectionVolatile memories: Criteria of selection
Entry Smartphone
High-end Smartphone
Entry Tablet High-end Tablet
Thin/light Notebook
HighHigh Bandwidth
Low Energy/Bit
Low Standby Power
Low Cost
Small Real EstateHighHigh
ScalabilityStrong
Ecosystem
Case study: LPDDR3 and DDR3LCase study: LPDDR3 and DDR3Lmm
PriceLPDDR3
DDR3L
LPDDR3
DDR3Lm
P C ti
DDR3
Power Consumption
Opportunity to position an additional device!
Case study: WideCase study: Wide--IO and LPDDR4IO and LPDDR4
• Wide adoption of Wide-IO will probably end up being a matter of costbeing a matter of cost:
• Can the manufacturing and testing costs be contained?
• Can the industry converge on “PoP-like” business models between the players of the value chain?
• Can the solution afford the added cost of a silicon interposer?
Non volatile memoriesNon volatile memoriesBreakdown by density in the Smartphone & Tablet Breakdown by density in the Smartphone & Tablet
SpacesSpacesSpacesSpaces
Non volatile memories: criteria of selectionNon volatile memories: criteria of selection
Entry Smartphone
High-end Smartphone Entry Tablet High-end
TabletThin/light NotebookSmartphone Smartphone Tablet Notebook
High Performance
Low StandbyLow Standby Power
Low Cost
Strong Ecosystem
e MMC: the reference choice in mobile handsetse MMC: the reference choice in mobile handsets
Ecosystem• Most widely enabled interface• Large availability of drivers• Multiple suppliers
Cost
Multiple suppliers
• Multiple sources• No royalties• Limited IP cost and barriers to entry
L P M d
• Limited IP cost and barriers to entry• Cost of controller depends on performance needs
ffLow-Power Modes • Efficient physical layer
• Can’t compete with command-queuing
Peak Performanceinterfaces but..• Sufficient for the most part of the overall market.
4 5 system level performance features provide• 4.5 system-level performance features provide room to additional improvement.
UFS, the next generation ofUFS, the next generation ofnonnon--volatile memory for Mobilevolatile memory for Mobile
• Support new mobile computing paradigm
– Low-latency, high IOPS
– Command queuing, multi-threaded operation
• Tailored for mobile applications
– Low power consumption
– Functional features for mobile inherited from e-MMC
• Leverage high-performance standardsg g p
– MIPI M-PHY and UniPro standards for PHY and Link layers
– SCSI command protocolSCSI command protocol
UFS: superior performance for the futureUFS: superior performance for the future
Interface Speed Relative Random Performance(Projected)
1000
1200
1400
ed
UFS v2.0HS Gear 3
(Projected)with Command
Queuing
200
400
600
800
Inte
rfac
e Sp
ee(M
B/s
ec)
e-MMC v4.452MHz DDR
UFS v1.0HS Gear 2 Single-threaded,
no queue
0
200
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
52MHz DDRe-MMC v4.5
200MHz SDR
e-MMC UFS
UFS vs. lowUFS vs. low--power SATApower SATAUFS (M bil ld) SATA (PC ld)
Ecosystem• UFS (Mobile world) vs. SATA (PC world).• Low-power processors with SATA implementations available earlier.
Cost • Generally similar.
Low-Power Modes
• UFS has a physical layer designed for low-power mode.• SATA low power mode implementation is still in• SATA low-power mode implementation is still in the works.
• Similar with command queuing – Bottleneck is Peak Performance
q gNAND performance.• Time to market better for SATA but how viable SATA will be as a solution for the Mobile world is a question mark.
New classes of hybrid systems are to emerge as NAND New classes of hybrid systems are to emerge as NAND reliability and performance degrade.reliability and performance degrade.
Enduring/Power loss
immune
Separately partition data that degrades NAND
Memory (PCM)
+
performance and endurance!
NORSLC
and/orMLC NAND
SLC and/or
MLC NAND
+
+
MLC NAND
+
MLC NAND
+
PSRAM DRAM DRAM
Micron develops a complete portfolio of low-power memories intended for all high-end mobile market sub-segmentsg g
Smart Phones Tablet Thin/light Notebook
• NAND + LPDDR1 MCP • e.MMC + LPDDR1/2/3 MCP• e.MMC Discrete
LPDDR2/3/4 Di t
• e.MMC Discrete • e.MMC + LPDDR2/3 MCP• NAND
• SSD • LPDDR3/4• Wide I/O
• LPDDR2/3/4 Discrete• Wide I/O
• LPDDR2/3/4 Discrete• DDRx Discrete• Wide I/O
• DDRx Discrete and Modules
January 5, 2012
Thank you!
January 5, 2012
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