NEXLNEXL
1
NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Development of Under Layer material for EUV Lithography
Nissan Chemical Industries, LTD.
NEXLNEXL
2
NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Reflectivity control is the key factor.BARC material is necessary for Optical Lithography.
Substrate
BARC
PR
Fitting optical phase
Optical LithographyOptical Lithography(with g(with g--line, iline, i--line, KrF, ArF)line, KrF, ArF)
Substrate
Under-layer
PR
No reflection with EUV
EUV LithographyEUV Lithography(with 13.5nm)(with 13.5nm)
Because EUV light is absorbed or path the layers, it does not need the reflectivity control . However, UL is used as adhesion and LWR reduction purpose.
Opt. Lithography and EUV Lithography
NEXLNEXL
3
NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
RLS trade off
LER
Sensitivity
Resolution
LER
Sensitivity
Resolution
Sub.U.L.
PR
To apply the functional UnderTo apply the functional Under--Layer(ULLayer(UL) to minimize the trade off RLS) to minimize the trade off RLS
R: ResolutionL: Line-Edge-Roughness
S: Sensitivity
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
<HM+UL>
PR (FT: ~50nm?)
UL (FT: ~20nm)
HM-1 (CVD)
Substrate-1
Org.-UL
Requirements for EUV Under-layer・High adhesion with PR・Block the contamination from substrate (Barrier film) ・Good performance with thin film (~20nm) ・Good etch performance with fast etch rate or thin FTK.・No out-gassing・・resolution enhancementresolution enhancement (pattern collapse)(pattern collapse)・・Reduce LWR, LERReduce LWR, LER-- Enhance Enhance SensitivitySensitivity
Under-layer
Substrate
P.R.
Stack structure;
Org.-HM
Inorg.-UL
Substrate-1
<Tri-layer>
PR (FT: ~50nm?)
Requirement for EUV UL materialRequirement for EUV UL material
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Pattern Collapse
NEXLNEXL
6
NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
20
25
30
35
40
45
B C D E F G
Lin
e W
idth
[nm
]
on Si
Conv. KrF-BARC (narrow collapse margin)
Optimized UL for EUV-PR
Optimized UL had capability for below 30nm HP.
PR: SSR-3HP: 32nm
Minimum standing line width
SPIE 2009, 7273-113, Selete, D. Kawamura, et al.
Pattern Collapse
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Silicon
HM-layerNCX (U.L.)
PR
OH
OO
OO
OO
SO O-
OR2 S+
R2
R2
OR1
EUV-PR resin
Introducing High adhesion unit into basePolymer of UL.
High density unit High polarity unit
Pattern Collapse
UL could help resist to increase Pattern Collapse window
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
36.9nm 30.4nm 26.7nm
32.6nm 31.1nm 26.4nm 22.3nm
35.7nm 30.5nm 26.2nm
8.4nm 6.0nm 5.6nm
5.7nm 6.9nm 6.7nm 6.0nm
7.5nm 6.0nm 6.4nm
24.3nm 22.8nm5.9nm 5.9nm
13.45 mJ12.45 mJ11.45 mJ10.45 mJ
15.45 mJ14.45 mJ13.45 mJ12.45 mJ11.45 mJ10.45 mJ
21.7nm 19.9nm4.9nm 5.6nm
14.35 mJ13.4 mJ12.45 mJ11.5 mJ10.55 mJ
UL-A(Polar unit)
Ref.
UL-B(Polar unit)
Exp:MET, EUV-PR
Achieved ~20nm size Pattern at over dose condition.
The comparison of pattern collapse margin.
Pattern Collapse
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Line-Edge-Roughness
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
UL improves the LWR
On X-Layer
On ULSeleteEUV symposium @ Barcelona
Line-Edge-Roughness
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Material Concept for profile controlMaterial Concept for profile control
H + H +
H +H +H +
H +
base - Base - Base -
NCX (Barrier/Buffer property)
ConceptConcept--11High film density (Physically barrier)
ConceptConcept--22Enhancement of Acid generation efficiency at interface between UL and PR.
H +
H +e-/acid
LWR / LER
Footing / Scumming
Top downX section
Line-Edge-Roughness
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Si-Sub./HMDS Acrylate HighHigh--densitydensity
HP 45
HP 35
HP 32
Taper/Footing profile Taper/Footing profile Vertical profileVertical profile
SPIE 2009, 7273-113, Selete, D. Kawamura, et al.
High Density UL material
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Photo-sensitivity
Keep the performance of Pattern Collapse & LER,
but enhance the photo-sensitivity of EUV resist
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
PR
UL
EUV
H+ H+
e- e-
Acid Generation MechanismAcid Generation Mechanism
2nd e-
e・+
e- Activation
EUV
Polymer matrix of U.L.
PAGàH+
Polymer matrix of PR
PAGàH+
2nd e-
e・+
e- Activation
EUV
Polymer matrix of U.L.
PAGàH+
Polymer matrix of PR
PAGàH+
Sensitivity
X HX H
RH : ResinMX : PAGRH : Radical cation of resinR : Radical of resinRH(H) : Protonated resinM : decomposition of PAGX- : Counter anion of PAG
・+
+
・
prof. Tagawa, Kozawa, et al
ee
MXMX
M
+
XX-
- +H
RHRH
EUV
RHRH ・+ RH(H)RH(H)+
RHRH
RR・・
-
Acid Generation Acid Generation
Electron Electron GenerationGeneration
Resin
PAG
Resin
Radical
Anion
ProtonationProtonation
Proton Proton tranfertranfer
X HX H
RH : ResinMX : PAGRH : Radical cation of resinR : Radical of resinRH(H) : Protonated resinM : decomposition of PAGX- : Counter anion of PAG
・+
+
・
prof. Tagawa, Kozawa, et al
ee
MXMX
M
+
XX-
- +H
RHRH
EUV
RHRH ・+ RH(H)RH(H)+
RHRH
RR・・
-
Acid Generation Acid Generation
Electron Electron GenerationGeneration
Resin
PAG
Resin
Radical
Anion
ProtonationProtonation
Proton Proton tranfertranfer
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Si-Sub. (O.D.=1.7)(w/ HMDS)
UL-H (O.D= 13.3um-1)(w/ Chromophore)
11.68mJ/cm212.53mJ/cm2
12.25mJ/cm213.21mJ/cm2
11.98mJ/cm212.96mJ/cm2
Sensitivity enhanced~10% by Underlayer
2nd electron concept can enhance photospeed and also make pattern profileMore vertical!
1010.5
1111.5
1212.5
1313.5
1414.5
15
25 35 45 55Hp (nm)
Dose
to
size
(mJ/
cm2) HMDS
NCX- B
Sensitivity
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
0.015
0.02
0.025
0.03
0.035
0.04
8 9 10 11 12 13 14 15 16Dose (mJ/ cm2)
CD (u
m)
Type BType A Type A
Type BIncrease sensitivityIncrease sensitivity
Tool: METTarget CD: hp30nm
EUV Litho Evaluation ~Dose to CD hp 30nm~
Type B resin used UL can improve sensitivity,and pattern space area is more clear than type A resin from top view.
⇒⇒ Type B resin generated more Type B resin generated more electronelectron by EUV.by EUV.UL can control PR sensitivity and litho profile by control 2UL can control PR sensitivity and litho profile by control 2ndnd electron gen..electron gen..
Sensitivity
NEXLNEXL
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NISSAN CHEMICAL INDUSTRIES, LTD. Electronic Materials Research Laboratories.
SEMATECH IEUVI resist TWG, 2011-02-27
Challenging and Solution by xChallenging and Solution by x--layerlayer
TMTM
Conclusion
1.The key parameter for EUV-UL development are Outgassing control, strong adhesion with PR and LWR control and less LER.
2. The pattern collapse margin was improved by introducing polar unit into basepolymer of UL.
3.High density UL could make resist profile more vertical and less LER.
4.The result of acid generation efficiency at UL surface was roughly correlated withactual PR photo-speed. (But need to confirm some other resist platform)
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