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HTF18C64_128_256x72.fm - Rev. E 3/07 EN 2 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMFeatures
Notes : 1. Da ta sheets for the base dev ices can be found on Micron s Web site .
2. All part numbers end w ith a tw o-place code (not show n), designat ing compon ent and PCB
revisions. Con sult fa cto ry fo r curren t re vision cod es. Exa mp le: MT18HTF6472Y-667D2.
Table 2: Addressing
512MB 1GB 2GB
Refresh count 8K 8K 8K
Row add ress 8K (A0A12) 16K (A0A13) 16K (A0A13)
Device ban k add ress 4 (BA0, BA1) 4 (BA0, BA1) 8 (BA0, BA1, BA2)
Device pag e size per ba nk 1KB 1KB 1KB
Device configura tion 256Mb (64 Me g x 4) 512Mb (128 Me g x 4) 1G b (256 Me g x 4)
Column a ddress 2K (A0A9, A11) 2K (A0A9, A11) 2K (A0A9, A11)
Module rank add ress 1 (S0#) 1 (S0#) 1 (S0#)
Table 3: Part Numbe rs and Timing Parame ters 512MB Modu les
Ba se d evice: M T47H64M4,1256Mb DDR2 SDRAM
Part Number2 ModuleDensity
Configuration ModuleBandwidth
Memory Clock/Data Rate
Latency(CL-tRCD-tRP)
MT18HTF6472Y-53E__ 512MB 64 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT18HTF6472Y-40E__ 512MB 64 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 4: Part Num bers and Timing Param ete rs 1GB Modu les
Ba se d evice: M T47H128M4,1512Mb DDR2 SDRAM
Part Number2 ModuleDensity
Configuration ModuleBandwidth
Memory Clock/Data Rate
Latency(CL-tRCD-tRP)
MT18HTF12872(P)Y-80E__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF12872(P)Y-800__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTF12872(P)Y-667__ 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT18HTF12872(P)Y-53E__ 1GB 128 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT18HTF12872(P)Y-40E__ 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 5: Part Numbe rs and Timing Param ters 2GB Modu les
Ba se d evice: M T47H256M4,11Gb DDR2 SDRAM
Part Numbe r2 ModuleDensity
Configuration ModuleBandwith
Memory Clock/Data Rate
Latency(CL-tRCD-tRP)
MT18HTF25672(P)Y-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF25672(P)Y-800__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTF25672(P)Y-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5MT18HTF25672(P)Y-53E__ 2GB 256 Meg x 72 4.3 G B/s 3.75ns/533 MT/s 4-4-4
MT18HTF25672(P)Y-40E__ 2GB 256 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
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512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMPin Assignments and Descriptions
Pin Assignm ents and Descriptions
Notes : 1. P in 54 is NC for 512MB and 1GB or BA2 for 2GB.
2. Pin 55 is NC for non-parity and ERR_OUTfo r parity.
3. Pin 68 is NC for non-parity and P AR_INfo r parity.
4. Pin 196 is NC for 512MB or A13 fo r 1GB and 2GB.
Table 6: Pin Assignm ent s
240-Pin RDIMM Front 240-Pin RDIMM Back
Pin Sym bol Pin Sym bol Pin Sym bol Pin Sym bol Pin Sym bol Pin Sym bol Pin Sym bol Pin Sym bol
1 VREF 31 DQ19 61 A4 91 VSS 121 VSS 151 VSS 181 VDD Q 211 DQS14
2 VSS 32 VSS 62 VDD Q 92 DQS5# 122 DQ4 152 DQ28 182 A3 212 DQS14#
3 DQ0 33 DQ24 63 A2 93 DQS5 123 DQ5 153 DQ29 183 A1 213 VSS
4 DQ1 34 DQ25 64 VDD 94 VSS 124 VSS 154 VSS 184 VDD 214 DQ46
5 VSS 35 VSS 65 VSS 95 DQ42 125 DQS9 155 DQS12 185 CK0 215 DQ47
6 DQS0# 36 DQS3# 66 VSS 96 DQ43 126 DQS9# 156 DQS12# 186 CK0# 216 VSS
7 DQS0 37 DQS3 67 VDD 97 VSS 127 VSS 157 VSS 187 VDD 217 DQ52
8 VSS 38 VSS 683 NC/
PAR_IN
98 DQ48 128 DQ6 158 DQ30 188 A0 218 DQ53
9 DQ2 39 DQ26 69 VDD 99 DQ49 129 DQ7 159 DQ31 189 VDD 219 VSS
10 DQ3 40 DQ27 70 A10 100 VSS 130 VSS 160 VSS 190 BA1 220 RFU
11 VSS 41 VSS 71 BA0 101 SA2 131 DQ12 161 CB4 191 VDD Q 221 RFU12 DQ8 42 CB0 72 VDD Q 102 NC 132 DQ13 162 CB5 192 RAS# 222 VSS
13 DQ9 43 CB1 73 WE# 103 VSS 133 VSS 163 VSS 193 S0# 223 DQS15
14 VSS 44 VSS 74 CAS# 104 DQS6# 134 DQS10 164 DQS17 194 VDD Q 224 DQS15#
15 DQS1# 45 DQS8# 75 VDD Q 105 DQS6 135 DQS10# 165 DQS17# 195 ODT0 225 VSS
16 DQS1 46 DQS8 76 S1# 106 VSS 136 VSS 166 VSS 1964 NC/A13 226 DQ54
17 VSS 47 VSS 77 ODT1 107 DQ50 137 RFU 167 CB6 197 VDD 227 DQ55
18 RESET# 48 CB2 78 VDD Q 108 DQ51 138 RFU 168 CB7 198 VSS 228 VSS
19 NC 49 CB3 79 VSS 109 VSS 139 VSS 169 VSS 199 DQ36 229 DQ60
20 Vss 50 VSS 80 DQ32 110 DQ56 140 DQ14 170 VDDQ 200 DQ37 230 DQ61
21 DQ10 51 VDD Q 81 DQ33 111 DQ57 141 DQ15 171 CKE1 201 VSS 231 VSS
22 DQ11 52 CKE0 82 VSS 112 VSS 142 VSS 172 VDD 202 DQS13 232 DQS16
23 VSS 53 VDD 83 DQS4# 113 DQS7# 143 DQ20 173 NC 203 DQS13# 233 DQS16#
24 DQ16 541 NC/BA2 84 DQS4 114 DQS7 144 DQ21 174 NC 204 VSS 234 VSS
25 DQ17 552 NC/
ERR_OUT
85 VSS 115 VSS 145 VSS 175 VDDQ 205 DQ38 235 DQ62
26 VSS 56 VDD Q 86 DQ34 116 DQ58 146 DQS11 176 A12 206 DQ39 236 DQ63
27 DQS2# 57 A11 87 DQ35 117 DQ59 147 DQS11# 177 A9 207 VSS 237 VSS
28 DQS2 58 A7 88 VSS 118 VSS 148 VSS 178 VDD 208 DQ44 238 VDDSPD
29 VSS 59 VDD 89 DQ40 119 SDA 149 DQ22 179 A8 209 DQ45 239 SA0
30 DQ18 60 A5 90 DQ41 120 SCL 150 DQ23 180 A6 210 VSS 240 SA1
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HTF18C64_128_256x72.fm - Rev. E 3/07 EN 4 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMPin Assignments and Descriptions
Table 7: Pin Descriptions
Symbol Type Description
ODT0 Input
(SSTL_18)
On-die te rmination : ODT(registered HIGH) enab les termina tion resista nce interna l to th eDDR2 SDRAM. When ena bled, ODTis only a pplied to the fo llow ing pins: DQ, DQS, DQS#,
an d CB. The ODTinput w ill be igno red if d isab led via the LOAD MODE comma nd.
CK0, CK0# Input
(SSTL_18)
Clock: CK an d CK# are diff erentia l clock inputs. All add ress and control input signa ls aresampled on the crossing of t he posit ive edg e of CK and nega t ive edg e of CK#. Output da ta
(DQs a nd DQS/DQS#) is refe renced to th e crossing s of CK an d CK#.
CKE0 Input
(SSTL_18)
Clock enable : CKE (reg iste red HIGH) activat es an d CKE (reg iste red LOW) de a ctivat esclocking circuitry o n t he DDR2 SDRAM.
S0# Input
(SSTL_18)
Chip select: S# enab les (registered LOW) and disab les (registered HIGH) the comm an ddecoder.
RAS#, CAS#,
WE#
Input
(SSTL_18)
Command inputs: RAS#, CAS#, an d WE# (alon g w ith S#) de fine t he com ma nd beingentered.
BA0, BA1
(512MB, 1GB )
BA0, BA1, BA2
(2GB)
Input
(SSTL_18)
Bank address inputs: BA0BA1/BA2 def ine th e d evice b a nk t o w hich a n ACTIVE, READ,WRITE, o r PRECHARGE com ma nd is be ing a pplie d. BA0BA1/BA2 d ef ine w hich m od e
reg iste r, including MR, EMR, EMR(2), a nd EMR(3), is loa de d during th e LOAD MOD E
command.
A0A12
(512MB)
A0A13
(1GB, 2GB)
Input
(SSTL_18)
Address inputs: Provide the row ad dress fo r ACTIVE comm an ds, and the column a dd ressan d au to precharg e b it (A10) for READ/WRITE com ma nds, to select o ne location out of the
mem ory a rray in th e respective b an k. A10 sam pled d uring a PRECHARGE comm an d
de te rmines w he th er th e PRECHARGE applies to o ne d evice ba nk (A10 LOW, device ba nk
select ed by BA0BA1/BA2) or a ll device b a nks (A10 HIGH). The a d dre ss inpu ts a lso pro vide
the op-cod e during a LOAD MODE comma nd.
PAR_IN Input
(SSTL_18)
Parity bit fo r the a ddress and control bus.
SCL Input Serial clock f or presence-detect: SCL is used to synchronize t he presence-det ect d at atransfer to an d from the module.
SA0SA2 Input Presence-detect address inputs: These pins are used t o con figure the presence-de tectdevice.
RESET# Input
(LVCMOS)
Asynchron ou sly f orces a ll reg iste red ou tpu ts LOW w hen RESET# is LOW. This sig na l can be
used d uring pow er-up t o ensure tha t CKE is LOW and DQs are High-Z.
DQS0DQS17,
DQS0#DQS17#
I/O
(SSTL_18)
Data strobe : Output with read da ta , input w ith w rite d at a f or source synchrono usoperat ion. Edg e-aligne d w ith read d ata , center-aligned w ith w rite d at a . DQS# is only used
w hen d if ferent ia l da ta strobe m ode is enab led via t he LOAD MODE command .
DQ0DQ63 I/O
(SSTL_18)
Data inpu t/out put: Bidirectional data bus.
CB0CB7 I/O
(SSTL_18)
Check bits.
SDA I/O Serial presence-detect data : SDA is a b idirectiona l pin used to tra nsfer ad dresses andda ta into a nd out o f the presence-dete ct port ion of the mo dule.
ERR_OUT Output
(open drain)
Parity error found o n the ad dress and control bus.
VDD /VDDQ Supply Pow er supply: 1.8V 0.1V.
VREF Supply SSTL_18 ref ere nce vo lta g e.
VSS Supply Ground.
VDDSPD Supply Serial EEPROM positive pow er supply: + 1.7V to + 3.6V.
NC No connect: These pins should be left unconne cted.
DNU Do not use.
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HTF18C64_128_256x72.fm - Rev. E 3/07 EN 5 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMFunctional Block Diagram
Functiona l Block DiagramFigure 2: Functiona l Block Diagram
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ 0
DQ 1
DQ 2
DQ 3
U1
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ 4
DQ 5
DQ 6
DQ 7
U2 2
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ 8
DQ 9
DQ10
DQ11
U2
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ12
DQ13
DQ14
DQ15
U2 1
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ16
DQ17
DQ18
DQ19
U3
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ20
DQ21
DQ22
DQ23
U2 0
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ24
DQ25
DQ26
DQ27
U4
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ28
DQ29
DQ30
DQ31
U1 9
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ32
DQ33
DQ34
DQ35
U9
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ36
DQ37
DQ38
DQ39
U1 6
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ40
DQ41
DQ42
DQ43
U1 0
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ4 4
DQ4 5
DQ4 6
DQ4 7
U1 5
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ48
DQ49
DQ50
DQ51
U1 1
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ52
DQ53
DQ54
DQ55
U1 4
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ56
DQ57
DQ58
DQ59
U1 2
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ60
DQ61
DQ62
DQ63
U1 3
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
CB4
CB5
CB6
CB7
U1 8
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
CB0
CB1
CB2
CB3
U5
A0
SPD EEPROM
A1 A2
SA0 SA1 SA2
SDASCL
WP
PLLCK0
CK0#
DDR2 SDRAM x 2
DDR2 SDRAM x 2
DDR2 SDRAM x 2
DDR2 SDRAM x 2
DDR2 SDRAM x 2
DDR2 SDRAM x 2
DDR2 SDRAM x 2
DDR2 SDRAM x 2
DDR2 SDRAM x 2
Register x 2
RESET#
U8
VREF
VSS
DDR2 SDRAM
DDR2 SDRAM
VDD /VDD Q
VDDSPD SPD EEPROM
DDR2 SDRAMU 7
U6, U17
VSS
RS0# DQS0DQS0#
DQS1DQS1#
DQS2DQS2#
DQS3DQS3#
DQS4DQS4#
DQS5DQS5#
DQS6DQS6#
DQS7DQS7#
DQS8DQS8#
DQS9DQS9#
DQS10DQS10#
DQS11DQS11#
DQS12DQS12#
DQS13DQS13#
DQS14DQS14#
DQS15DQS15#
DQS16DQS16#
DQS17DQS17#
Re
g
is
te
r
PAR_IN
S0#
BA0B A1/BA2
A0A12/A13
RAS#
CAS#
WE#
CKE0
ODT0
RESET#
ERR_OUT
RS0#: DDR2 SDRAM
RBA0RBA1/RBA2: DD R2 SDRAM
RA0RA12/RA13: DD R2 SDRAM
RRAS#: DDR2 SDRAM
RCAS#: DDR2 SDRAM
RWE#: DDR2 SDRAM
RCKE0: DDR2 SDRAM
RODT0: DDR2 SDRAM
VSS
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512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMGeneral Description
General DescriptionThe MT18HTF6472, MT18HTF12872(P), and MT18HTF25672(P) DDR2 SDRAM modulesare high-speed, CMOS, dynamic random-access 512MB, 1GB, and 2GB memorymodules organized in a x72 configuration. These DDR2 SDRAM modules use internally
configured 4-bank (256Mb, 512Mb) or 8-bank (1Gb) DDR2 SDRAM devices.
DDR2 SDRAM modules use double data rate architecture to achieve high-speed opera-tion. The double data rate architecture is essentially a 4n-prefetch architecture with aninterface designed to transfer two data words per clock cycle at the I/O pins. A singleread or write access for the DDR2 SDRAM module effectively consists of a single 4n-bit-
wide, one-clock-cycle data transfer at the internal DRAM core and four correspondingn-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, foruse in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAMdevice during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs.
DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing ofCK going HIGH and CK# going LOW will be referred to as the positive edge of CK.Commands are registered at every positive edge of CK. Input data is registered on bothedges of DQS, and output data is referenced to both edges of DQS, as well as to bothedges of CK.
Register and PLL Operation
DDR2 SDRAM modules operate in registered mode, where the command/address inputsignals are latched in the registers on the rising clock edge and sent to the DDR2 SDRAMdevices on the following rising clock edge (data access is delayed by one clock cycle). Aphase-lock loop (PLL) on the module receives and redrives the differential clock signals(CK, CK#) to the DDR2 SDRAM devices. The register(s) and PLL reduce address,
command, control, and clock signal loading by isolating DRAM from the systemcontroller. PLL clock timing is defined by JEDEC specifications and ensured by use of theJEDEC clock reference board. Registered mode will add one clock cycle to CL.
Serial Presence-Detect Operation
DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function isimplemented using a 2,048-bit EEPROM. This nonvolatile storage device contains256 bytes. The first 128 bytes can be programmed by Micron to identify the module typeand various SDRAM organizations and timing parameters. The remaining 128 bytes ofstorage are available for use by the customer. System READ/WRITE operations betweenthe master (system logic) and the slave EEPROM device occur via a standard I2C bususing the DIMMs SCL (clock) and SDA (data) signals, together with SA (2:0), which
provide eight unique DIMM/EEPROM addresses. Write protect (WP) is tied to VSSon themodule, permanently disabling hardware write protect.
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512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMElectrical Specifications
Electrical SpecificationsStresses greater than those listed in Table 8may cause permanent damage to themodule. This is a stress rating only, and functional operation of the module at these orany other conditions above those indicated in the operational sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for extendedperiods may affect reliability.
Notes : 1. The ref resh ra te is required to doub le when 85C < TC 95C.
2. For fu rther info rmat ion, refer t o t echnical no te TN-00-08: Therma l Applications, ava ilab le
on Micron s Web site .
Input Capacitance
Micron encourages designers to simulate the performance of the module to achieveoptimum values. Simulations are significantly more accurate and realistic than a grossestimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations. JEDEC modules are currently designed usingsimulations to close timing budgets.
Com ponen t AC Timing and Operating Conditions
Recommended AC operating conditions are given in the DDR2 component data sheets.Component specifications are available on Microns Web site. Module speed gradescorrelate with component speed grades as shown in Table 9.
Table 8: Absolut e Maxim um Ratings
Symbol Parameter Min Max Units
VDD /VDD Q VDD supply volta g e relative to VSS 0.5 + 2.3 V
VIN, VOUT Voltag e on any pin rela t ive to VSS 0.5 + 2.3 V
II Input leakag e current; Any input 0V VINVDD ;
VREFinput 0V VIN 0.95V; (All oth er pins no t und er
test = 0V)
Comm a nd /a dd ress,
RAS#, CAS#, WE#, S#,
CKE, ODT, BA
5 + 5A
CK, CK# 250 + 250
IOZ Output lea kag e current ; 0V VOU TVDDQ; DQs and
ODTare disabled
DQ, DQS, DQS#5 + 5 A
IVREF VREFleakag e current ; VREF= Valid VREFlevel 36 + 36 A
TA Mo dule a mb ient o pera t ing t empera t ure Co mmercia l 0 + 70 C
Indust ria l 40 + 85 C
TC1 DDR2 SDRAM compo nent case opera ting
temperature 2Commercial 0 + 85 C
Indust ria l 40 + 85 C
Table 9: Module and Compo nent Speed GradesModule Speed Grade Component Speed Grade
-80E -25E
-800 -25
-667 -3
-53E -37E
-40E -5E
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512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMIDDSpecifications
IDDSpecification s
Tab le 10: DDR2 IDDSpecifications an d Con dition s 512MBVa lues sho w n fo r MT47H64M4 DDR2 SDRAM on ly and a re comp ute d f rom va lues specified in the
256Mb (64 Meg x 4) compo nent da ta sheet
Parameter/Condition Symbol -53E -40E Units
Operating o ne b ank active-precharge current: tCK = tCK (IDD ),tRC = tRC (IDD ), tRAS = tRAS MIN (IDD ); CKE is HIGH, S# is HIGH be tw ee n va lid
comma nds; Add ress bus inputs are switching; Da ta bus inputs are switching
IDD0 1,440 1,350 mA
Operating o ne bank active-read-precharge current:IOU T= 0mA; BL = 4,CL = CL (IDD ), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD),tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH be tw ee n va lid comm a nd s; Add ress
bus inputs are switching; Da ta pat tern is same a s IDD 4W
IDD1 1,620 1,530 mA
Precharge power-down current: All device ba nks idle; tCK = tCK (IDD ); CKE isLOW; Other cont rol and ad dress bus inputs are stable; Da ta bus inputs are
float ing
IDD2P 90 90 mA
Precharge quiet standby current: All de vice b a nks idle; tCK = tCK (IDD ); CKEis HIGH, S# is HIGH; Other con trol a nd ad dress bus input s are sta ble; Da ta bus
inputs are f loat ing
IDD2Q 630 450 mA
Precharge standby current: All device ba nks idle; tCK = tCK (IDD ); CKE isHIGH, S# is HIGH; Other con trol a nd ad dress bus inputs are sw itching ; Dat a bus
inputs are sw itching
IDD2N 630 540 mA
Active power-down current: All device banks open;tCK = tCK (IDD); CKE is LOW; Oth er con tro l an d a dd ress bus
inputs are s table; Dat a bus inputs are f loa t ing
Fa st PDN exit
MR[12] = 0
IDD3P 450 360 mA
Slow PDN exit
MR[12] = 1
108 108 mA
Active standby current: All device banks open; tCK = tCK (IDD),tRAS = tRAS MAX (IDD ), tRP = tRP (IDD); CKE is HIGH, S# is HIGH be tw ee n va lid
comma nds; Other cont rol an d ad dress bus input s are switching; Dat a bu s inputs
are sw itching
IDD3N 720 540 mA
Operating burst w rite current: All device b an ks ope n; Cont inuous burstw rite s; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD ), tRAS = tRAS MAX (IDD ),tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n va lid comm an ds; Addre ss bus
inputs are sw itching ; Data bus inputs are switching
IDD 4W 2,880 2,250 mA
Operating b urst read current: All device b an ks ope n; Continuo us burstread s; IOU T= 0mA; BL = 4, CL = CL (IDD ), AL = 0; tCK = tCK (IDD ), tRAS = tRAS MAX
(IDD ), tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n va lid com ma nd s; Add ress
bus inputs are sw itching ; Data bus inputs are sw itching
IDD 4R 2,700 2,070 mA
Burst refresh current: tCK = tCK (IDD ); REFRESH command at every tRFC (IDD )interval; CKE is HIGH, S# is HIGH bet w een valid comma nds; Othe r control a nd
ad dress bus inputs are sw itching ; Data bus inputs are sw itching
IDD5 3,060 2,970 mA
Self refresh current: CK an d CK# a t 0V; CKE 0.2V; Othe r control a nd ad dressbus inputs are f loat ing; Data bus inputs are f loat ing
IDD6 90 90 mA
Operating bank interleave read current: All device banks interleavingread s; IOUT= 0mA; BL = 4, CL = CL (IDD ), AL = tRCD (IDD ) - 1 x tCK (IDD);tCK = tCK (IDD), tRC = tRC (IDD ), tRRD = tRRD (IDD ), tRCD = tRCD (IDD); CKE is
HIGH, S# is HIGH be tw een valid comma nd s; Add ress bus inputs are sta ble
during d eselects; Data bus inputs are sw itching
IDD7 4,320 4,140 mA
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512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMIDDSpecifications
Tab le 11: DDR2 IDDSpecifications an d Con dition s 1GBVa lues sho w n fo r MT47H128M4 DDR2 SDRAM on ly and a re comp ute d f rom va lues specified in the
512Mb (128 Meg x 4) compo nent da ta sheet
Parameter/Condition Sym bol
-80E/
-800 -667 -53E -40E UnitsOperating o ne b ank active-precharge current: tCK = tCK (IDD ),tRC = tRC (IDD), tRAS = tRAS MIN (IDD); CKE is HIGH, S# is HIGH b et w ee n va lid
comma nds; Add ress bus inputs are switching; Da ta bus inputs are switching
IDD0 1,800 1,620 1,440 1,440 mA
Operating o ne bank active-read-precharge current:IOU T= 0mA;BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD ), tRC = tRC (IDD ), tRAS = tRAS MIN
(IDD ), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH be tw ee n va lid comm a nd s;
Add ress bus inputs are sw itching ; Data pat tern is same a s IDD4W
IDD1 2,070 1,890 1,710 1,620 mA
Precharge power-down current: All device ba nks idle; tCK = tCK (IDD);CKE is LOW; Othe r control a nd ad dress bus inputs a re stab le; Dat a bus
inputs are f loat ing
IDD2P 126 126 126 126 mA
Precharge quiet standby current: All de vice b a nks idle; tCK = tCK (IDD );CKE is HIGH, S# is HIGH; Oth er con tro l and a dd ress bus input s are sta ble;
Data bus inputs are f loat ing
IDD 2Q 900 810 720 630 mA
Precharge standby current: All device ba nks idle; tCK = tCK (IDD ); CKE isHIGH, S# is HIGH; Other cont rol and ad dress bus inputs are sw itching ; Dat a
bus inputs are switching
IDD2N 990 900 810 720 mA
Active power-down current: All device banks open;tCK = tCK (IDD ); CKE is LOW; Oth er con tro l an d ad dre ss bus
inputs are s table; Dat a bus inputs are f loa t ing
Fast PDN exit
MR[12] = 0
IDD3P 720 630 540 450 mA
Slow PDN exit
MR[12] = 1
216 216 216 216 mA
Active standby current: All device banks open; tCK = tCK (IDD), tRAS =tRAS MAX (IDD), tRP = tRP (IDD ); CKE is HIGH, S# is HIGH be tw ee n va lid
command s; Other control and ad dress bus inputs are switching; Data bus
inputs are sw itching
IDD3N 1,260 1,170 990 810 mA
Operating burst w rite current: All device b an ks ope n; Cont inuous burst
w rite s; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD ), tRAS = tRAS MAX (IDD ),tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n va lid comm an ds; Addre ss
bus inputs are sw itching ; Data bus inputs are sw itching
IDD4W 3,510 3,060 2,520 2,070 mA
Operating b urst read current: All device b an ks ope n; Continuo us burstread s; IOUT= 0mA; BL = 4, CL = CL (IDD ), AL = 0; tCK = tCK (IDD ),tRAS = tRAS MAX (IDD ), tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n
valid comm an ds; Add ress bus inputs are sw itching ; Data bus inputs are
switching
IDD 4R 3,690 3,240 2,610 2,070 mA
Burst refresh current: tCK = tCK (IDD ); REFRESH command at everytRFC (IDD ) int erva l; CKE is HIGH, S# is HIGH be tw ee n va lid co mm a nd s; Other
control an d a dd ress bus inputs are switching; Da ta bus inputs are switching
IDD5 4,140 3,240 3,060 2,970 mA
Self refresh current: CK an d CK# at 0V; CKE 0.2V; Othe r contro l andad dress bus inputs are f loa t ing; Dat a bus inputs are f loat ing
IDD6 126 126 126 126 mA
Operating bank interleave read current: All device banks interleavingread s; IOUT= 0mA; BL = 4, CL = CL (IDD ), AL = tRCD (IDD ) - 1 x tCK (IDD);tCK = tCK (IDD), tRC = tRC (IDD ), tRRD = tRRD (IDD ), tRCD = tRCD (IDD); CKE is
HIGH, S# is HIGH be tw een valid comma nd s; Add ress bus inputs are sta ble
during d eselects; Data bus inputs are sw itching
IDD7 5,400 4,320 4,050 3,960 mA
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HTF18C64_128_256x72.fm - Rev. E 3/07 EN 10 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMIDDSpecifications
Tab le 12: DDR2 IDDSpecifications an d Con ditions (Die Revision A) 2GBVa lues sho w n fo r MT47H256M4 DDR2 SDRAM on ly and a re comp ute d f rom va lues specified in the
1Gb (256 Meg x 4) compo nent da ta sheet
Parameter/Condition Symbol -667 -53E -40E Units
Operating o ne b ank active-precharge current: tCK = tCK (IDD ),tRC = tRC (IDD ), tRAS = tRAS MIN (IDD ); CKE is HIGH, S# is HIGH b et w ee n
valid comm an ds; Add ress bus inputs are sw itching ; Data bus inputs are
switching
IDD 0 1,620 1,440 1,260 mA
Operating o ne bank active-read-precharge current:IOU T= 0mA;BL = 4, CL = CL (IDD ), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS
MIN (IDD), tRCD = tRCD (IDD ); CKE is HIGH, S# is HIGH b et w ee n va lid
comma nds; Add ress bus input s are sw itching ; Data pa tte rn is same a s
IDD 4W
IDD 1 1,800 1,710 1,440 mA
Precharge power-down current: All device ba nks idle; tCK = tCK (IDD);CKE is LOW; Othe r control a nd ad dress bus inputs a re stab le; Dat a bus
inputs are f loat ing
IDD2P 126 126 126 mA
Precharge quiet standby current: All device ba nks idle; tCK = tCK (IDD);
CKE is HIGH, S# is HIGH; Oth er con tro l and a dd ress bus input s are sta ble;Data bus inputs are f loat ing
IDD 2Q 990 738 630 mA
Precharge standby current: All device ba nks idle; tCK = tCK (IDD); CKE isHIGH, S# is HIGH; Other con trol a nd ad dress bus inputs are switching;
Dat a b us inputs are sw itching
IDD 2N 1,080 810 720 mA
Active power-down current: All device banks open;tCK = tCK (IDD ); CKE is LOW; Oth er con tro l an d a dd ress bus
inputs are s table; Dat a bus inputs are f loa t ing
Fa st PDN exit
MR[12] = 0
IDD3P 720 540 450 mA
Slow PDN exit
MR[12] = 1
180 180 180 mA
Active standby current: All device banks open; tCK = tCK (IDD),tRAS = tRAS MAX (IDD ), tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n
valid com ma nds; Other control and ad dress bus inputs are switching;
Dat a b us inputs are sw itching
IDD 3N 1,260 990 810 mA
Operating burst w rite current: All device b an ks ope n; Cont inuousburst w rites; BL = 4, CL = CL (IDD ), AL = 0; tCK = tCK (IDD),tRAS = tRAS MAX (IDD ), tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n
valid comm an ds; Add ress bus inputs are sw itching ; Data bus inputs are
switching
IDD 4W 2,880 2,340 1,980 mA
Operating b urst read current: All device ba nks open; Cont inuous burstread s; IOUT= 0mA; BL = 4, CL = CL (IDD ), AL = 0; tCK = tCK (IDD ),tRAS = tRAS MAX (IDD ), tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n
valid comm an ds; Add ress bus inputs are sw itching ; Data bus inputs are
switching
IDD4R 2,880 2,610 1,980 mA
Burst refresh current: tCK = tCK (IDD ); REFRESH command at everytRFC (IDD ) int erva l; CKE is HIGH, S# is HIGH be tw ee n va lid comm a nd s;
Other cont rol and a dd ress bus inputs are switching; Dat a b us inputs are
switching
IDD 5 4,680 4,500 3,960 mA
Self refresh current: CK an d CK# at 0V; CKE 0.2V; Othe r contro l andad dress bus inputs are f loa t ing; Dat a bus inputs are f loat ing
IDD 6 126 126 126 mA
Operating bank inte rleave read current: All de vice ba nks inte rleavingread s; IOUT= 0mA; BL = 4, CL = CL (IDD ), AL = tRCD (IDD ) - 1 x tCK (IDD);tCK = tCK (IDD ), tRC = tRC (IDD ), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is
HIGH, S# is HIGH be tw een valid comma nds; Address bus inputs are sta ble
during d eselects; Data bus inputs are sw itching
IDD 7 5,400 5,220 4,680 mA
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HTF18C64_128_256x72.fm - Rev. E 3/07 EN 11 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMIDDSpecifications
Tab le 13: DDR2 IDDSpecifications a nd Cond itions (Die Revision E) 2GBVa lues sho w n fo r MT47H256M4 DDR2 SDRAM on ly and a re comp ute d f rom va lues specified in the
1Gb (256 Meg x 4) compo nent da ta sheet
Parameter/Condition Symbol
-80E/
-800 -667 -53E -40E UnitsOperating o ne b ank active-precharge current: tCK = tCK (IDD ),tRC = tRC (IDD ), tRAS = tRAS MIN (IDD ); CKE is HIGH, S# is HIGH b et w ee n
valid comm an ds; Add ress bus inputs are sw itching ; Data bus inputs are
switching
IDD 0 1,620 1,530 1,260 1,260 mA
Operating o ne bank active-read-precharge current:IOU T= 0mA;BL = 4, CL = CL (IDD ), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS
MIN (IDD), tRCD = tRCD (IDD ); CKE is HIGH, S# is HIGH b et w ee n va lid
comma nds; Add ress bus input s are sw itching ; Data pa tte rn is same a s
IDD 4W
IDD 1 1,980 1,800 1,710 1,620 mA
Precharge power-down current: All device ba nks idle; tCK = tCK (IDD);CKE is LOW; Othe r control a nd ad dress bus inputs a re stab le; Dat a bus
inputs are f loat ing
IDD2P 126 126 126 126 mA
Precharge quiet standby current: All device ba nks idle; tCK = tCK (IDD);CKE is HIGH, S# is HIGH; Oth er con tro l and a dd ress bus input s are sta ble;
Data bus inputs are f loat ing
IDD 2Q 900 720 720 630 mA
Precharge standby current: All device ba nks idle; tCK = tCK (IDD); CKE isHIGH, S# is HIGH; Other con trol a nd ad dress bus inputs are switching;
Dat a b us inputs are sw itching
IDD 2N 900 720 720 630 mA
Active power-down current: All device banks open;tCK = tCK (IDD ); CKE is LOW; Oth er con tro l an d a dd ress bus
inputs are s table; Dat a bus inputs are f loa t ing
Fa st PDN exit
MR[12] = 0
IDD3P 720 540 540 540 mA
Slow PDN exit
MR[12] = 1
180 180 180 180 mA
Active standby current: All device banks open; tCK = tCK (IDD),tRAS = tRAS MAX (IDD ), tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n
valid com ma nds; Other control and ad dress bus inputs are switching;
Dat a b us inputs are sw itching
IDD 3N 1,080 990 810 720 mA
Operating burst w rite current: All device b an ks ope n; Cont inuousburst w rites; BL = 4, CL = CL (IDD ), AL = 0; tCK = tCK (IDD),tRAS = tRAS MAX (IDD ), tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n
valid comm an ds; Add ress bus inputs are sw itching ; Data bus inputs are
switching
IDD 4W 2,880 2,430 2,250 1,890 mA
Operating b urst read current: All device ba nks open; Cont inuous burstread s; IOUT= 0mA; BL = 4, CL = CL (IDD ), AL = 0; tCK = tCK (IDD ),tRAS = tRAS MAX (IDD ), tRP = tRP (IDD); CKE is HIGH, S# is HIGH b et w ee n
valid comm an ds; Add ress bus inputs are sw itching ; Data bus inputs are
switching
IDD4R 2,880 2,430 2,250 1,890 mA
Burst refresh current: tCK = tCK (IDD ); REFRESH command at everytRFC (IDD ) int erva l; CKE is HIGH, S# is HIGH be tw ee n va lid comm a nd s;
Other cont rol and a dd ress bus inputs are switching; Dat a b us inputs are
switching
IDD 5 4,230 3,870 3,780 3,690 mA
Self refresh current: CK an d CK# at 0V; CKE 0.2V; Othe r contro l andad dress bus inputs are f loa t ing; Dat a bus inputs are f loat ing
IDD 6 126 126 126 126 mA
Operating bank inte rleave read current: All de vice ba nks inte rleavingread s; IOUT= 0mA; BL = 4, CL = CL (IDD ), AL = tRCD (IDD ) - 1 x tCK (IDD);tCK = tCK (IDD ), tRC = tRC (IDD ), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is
HIGH, S# is HIGH be tw een valid comma nds; Address bus inputs are sta ble
during d eselects; Data bus inputs are sw itching
IDD 7 6,030 5,040 4,860 4,680 mA
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HTF18C64_128_256x72.fm - Rev. E 3/07 EN 12 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMRegister an d PLL Specificatio ns
Register and PLL Specifications
Notes : 1. Timing and sw itching specif ica t ions for the reg ister l isted ab ove are crit ica l fo r proper
ope ration of t he DDR2 SDRAM registered DIMMs. These are me an t to be a subset o f th e
pa rame ters for the specific device used on th e mod ule. Detailed informa tion fo r this regis-
te r is ava ilable in JEDEC sta nd a rd JESD82.
Table 14: Register SpecificationsSSTU32866 devices o r eq uiva len t J ESD82-16
Parameter Symbol Pins Condition Min Max Units
DC hig h-level
input voltag e
VIH(DC) Address,
control,
command
SSTL_18 VREF(DC) + 125 VDD Q + 250 V
DC low -level
input voltag e
VIL(DC) Address,
control,
command
SSTL_18 0 VREF(DC) - 125 V
AC high-level
input voltag e
VIH(AC) Address,
control,
command
SSTL_18 VREF(DC) + 250 VDD V
AC low -leve l
input voltag e
VIL(AC) Address,
control,
command
SSTL_18 0 VREF(DC) - 250 V
Output high voltag e VOH Pa rit y o ut put LVCMOS 1.2 V
Output low volt ag e VOL Pa rit y o ut put LVCMOS 0.5 V
Input current II All pins VI= VDDQ or VSSQ 5 5 A
Sta t ic sta ndby IDD All pins RESET# = VSSQ (IO= 0) 100 A
Static operating IDD All pins RESET# = VSSQ;
VI= VIH(AC) or VIL(DC)
IO= 0
40 mA
Dynamic operat ing
(clock tree )
IDDD n/a RESET# = VDD , VI= VIH(AC) or
VIL(AC), IO= 0; CK and CK#
swit ching 50% du ty cycle
Va ries by
manufacturer
A
Dynamic operat ing
(per ea ch input)
IDDD n/a RESET# = VDD , VI= VIH(AC) or
VIL(AC), IO= 0; CK and CK#
swit ching 50% du ty cycle;One dat a input sw itching a t
tCK/2, 50% d ut y cy cle
Va ries by
manufacturer
A
Input capacitance
(per device, per pin)
CI All inputs
except RESET#
VI= VREF 250mV;
VDDQ = 1.8V
2.5 3.5 pF
Input capacitance
(per device, per pin)
CI RESET# VI= VDDQ or VSSQ Va ries by
manufacturer
pF
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HTF18C64_128_256x72.fm - Rev. E 3/07 EN 13 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMRegister an d PLL Specificatio ns
Notes : 1. PLL t iming a nd switching specif ica t ions are crit ica l for proper operat ion of t he DDR2 DIMM.
This is a subset of pa ram et ers for th e specific PLL used. De ta iled PLL info rma tion is a vailab le
in JEDEC stan da rd JESD82.
Table 15: PLL Specificat ion sCU877 de vice or eq uivalent JESD82-8.01
Parameter Symbol Pins Condition Min Max Units
DC high-level input voltag e VIH RESET# LVCMOS 0.65 VDD V
DC low -level input volta g e VIL RESET# LVCMOS 0.35 VDD V
Input voltag e (limits) VIN RESET#, CK, CK# 0.3 VDD Q + 0.3 V
DC high-level input voltag e VIH CK, CK# Dif ferent ia l input 0.65 VDD V
DC low -level input volta g e VIL CK, CK# Dif ferent ia l input 0.35 VDD mV
Input differential-pair cross
vol t age
VIX CK, CK# Dif ferent ia l input (VDD Q/2) -
0.15
(VDDQ/2) +
0.15
V
Input d if ferent ia l voltag e VID(DC) CK, CK# Diff erent ia l input 0.3 VDD Q + 0.4 V
Input d if ferent ia l voltag e VID(AC) CK, CK# Diff erent ia l input 0.6 VDD Q + 0.4 V
Input current II RESET# VI= VDD Q or VSSQ 10 10 A
CK, CK# VI= VDD Q or VSSQ 250 250 A
Output disabled current IODL RESET# = VSSQ; VI= VIH(AC) or
VIL(DC)
100 A
Static supply current IDDLD CK = CK# = LOW 500 A
Dynamic supply IDD n/a CK, CK# = 270 MHz, a ll
outputs open
(not connected to PCB)
300 mA
Input capacitance CIN Ea ch input VI= VDD Q or VSSQ 2 3 p F
Table 16: PLL Clock Driver Timing Requireme nts and Sw itching Chara cteristics
Parameter Symbol Min Max Units
Stabilization time tL 15 s
Input clock slew rat e tLSI 1.0 4 V/ns
SSC modulation frequency 30 33 kHz
SSC clock input freq uency de viat ion 0.0 0.50 %
PLL loop ba ndw idth (3dB from unity g ain) 2.0 MHz
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HTF18C64_128_256x72.fm - Rev. E 3/07 EN 14 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMSerial Presence-Dete ct
Serial Presence-Detect
Notes : 1 . To a void spur ious st a r t and stop condi t ions, a minimum delay is placed betw een SCL = 1 and
the f alling o r rising ed ge of SDA.
2. This paramet er is sampled.
3. For a resta rt condition, o r follow ing a WRITE cycle.
4. The SPD EEPROM WRITE cycle t ime (tWRC) is the t ime from a valid stop cond ition of a w rite
seq ue nce t o t he en d o f t he EEPROM int ern a l ERASE/PROGRAM cycle. During th e WRITE
cycle, t he EEPROM b us interf ace circuit is disab led, SDA rema ins HIGH d ue t o pull-up re sis-
ta nce, and the EEPROM doe s not respond t o its slave ad dress.
Table 17: Serial Presen ce-Detect EEPROM DC Operat ing Con ditio nsAll voltag es refe renced to VSS; VDDSPD= + 1.7V to + 3.6V
Parameter/Condition Symbol Min Max Units
Supply volta ge VDDSPD 1.7 3.6 V
Input high voltag e: Log ic 1; All inputs VIH VDDSPD 0.7 VDDSPD+ 0.5 V
Input low voltag e: Log ic 0; All inputs VIL 0.6 VDDSPD 0.3 V
Output low volta ge: IOU T= 3mA VOL 0.4 V
Input lea kag e current : VIN= GND to VDD ILI 0.10 3 A
Output leakag e current : VOU T= GND to VDD ILO 0.05 3 A
Standby current ISB 1.6 4 A
Pow er supply current , READ: SCL clock fre q uen cy = 100 kHz ICCR 0.4 1 mA
Po w er supp ly curren t, WRITE: SCL clock fre q ue ncy = 100 kHz ICCW 2 3 mA
Table 18: Serial Presen ce-Detect EEPROM AC Operat ing Con ditio nsAll voltag es refe renced to VSS; VDDSPD= + 1.7V to + 3.6V
Parameter/Condition Sym bol Min Max Units Notes
SCL LOW to SDA da ta -ou t va lid tAA 0.2 0.9 s 1
Time the b us must be free b efo re a new tran sition can sta rt tBUF 1.3 s
Data -out ho ld t ime tDH 200 ns
SDA a nd SCL fa ll time tF 300 ns 2
Data -in hold t ime tHD:DAT 0 s
Sta rt condit ion h old t ime tHD:STA 0.6 s
Clock HIGH period tHIGH 0.6 s
Noise suppression t ime con sta nt at SCL, SDA input s tI 50 ns
Clock LOW perio d tLOW 1.3 s
SDA and SCL rise time tR 0.3 s 2
SCL clock freq uen cy fSCL 400 kHz
Dat a-in setup time tSU:DAT 100 ns
Start condition setup time tSU:STA 0.6 s 3
Stop condition setup time tSU:STO 0.6 s
WRITE cycle t ime tWRC 10 ms 4
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512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMSerial Presence-Dete ct
Table 19: Serial Presen ce-Detect Mat rix
Byte Description Entry (Version) 512MB1 1GB 2GB
0 Numbe r of SPD byt es used by Micron 128 80 80 80
1 Tot al num ber o f b ytes in SPD device 256 08 08 08
2 Funda menta l memory type DDR2 SDRAM 08 08 08
3 Numbe r of ro w ad dresses on SDRAM 13, 14 0D 0E 0E
4 Numbe r of column a dd resses on SDRAM 10 0B 0B 0B
5 DIMM height a nd mo dule ranks 30mm, single ra nk 60 60 60
6 Module da t a w idth 72 48 48 48
7 Reserved 0 00 00 00
8 Module voltage interface levels SSTL 1.8V 05 05 05
9 SDRAM cycle time, tCK
(CL = MAX value , see b yte 18)
-80E
-800
-667
-53E
-40E
3D
50
25
25
30
3D
50
25
25
30
3D
50
10 SDRAM access from clock, tAC
(CL = MAX value , see b yte 18)
-80E/-800
-667
-53E
-40E
50
60
40
45
50
60
40
45
50
60
11 Module configurat ion type ECC
ECC and parity
02
06
02
06
02
06
12 Ref resh ra te /type 7.81s/SELF 82 82 82
13 SDRAM device w idt h (primary SDRAM) 4 04 04 04
14 Error-checking SDRAM da ta w idt h 4 04 04 04
15 Reserved 0 00 00 00
16 Burst leng ths support ed 4, 8 0C 0C 0C
17 Number of banks on SDRAM device 4 o r 8 04 04 08
18 CAS la te ncies suppo rted -80E (5, 4)-800 (6, 5, 4)
-667 (5, 4, 3)
-53E/-40E (4, 3)
18
3070
38
18
3070
38
18
19 Mod ule th ickness 01 01 01
20 DDR2 DIMM t ype Registered
DIMM
01 01 01
21 SDRAM mod ule at tributes 1 PLL, 2 Reg 05 05 05
22 SDRAM d evice a tt ribut es: w ea k driver
(01), or w ea k driver a nd 50ODT(03)
-80E/-800/-667
-53E/-40E
01
03
01
03
01
23 SDRAM cycle time, tCK, MAX CL - 1 -80E/-667
-800
-53E/-40E
50
3D
30
50
3D
30
50
24 SDRAM access from CK, tAC, MAX CL - 1 -80E/-800
-667
-53E
-40E
50
60
40
45
50
60
40
45
50
60
25 SDRAM cycle time, tCK, MAX CL - 2 -80E/-800
-667
-53E/-40E
00
3D /00
50
00
3D /00
50
00
26 SDRAM access from CK, tAC, MAX CL - 2 -80E/-800
-667
-53E/-40E
00
40/00
45
00
40/00
45
00
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HTF18C64_128_256x72.fm - Rev. E 3/07 EN 16 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMSerial Presence-Dete ct
27 MIN row precharg e time, tRP -80E
-800/-667
-53E/-40E
3C
32
3C
3C
32
3C
3C
28 MIN row active-to -row active, tRRD 1E 1E 1E
29 MIN RAS#-t o -CAS# d ela y, tRCD -80E
-800/-667
-53E/-40E
3C
32
3C
3C
32
3C
3C
30 MIN active-to-precharge, tRAS -80E/-800
-667/-53E
-40E
/2D
28
2D
2D
28
2D
2D
28
31 Module rank density 512MB, 1GB, 2GB 80 01 02
32 Address and command setup t ime, t ISb -80E/-800
-667
-53E
-40E
25
35
17
20
25
35
17
20
25
35
33 Address and command hold t ime, t IHb -80E/-800
-667
-53E
-40E
37
47
25
27
37
47
25
27
37
47
34 Dat a/da ta ma sk input setup time, tDSb -80E/-800
-667/-53E
-40E
/10
15
05
10
15
05
10
15
35 Dat a/da ta m ask input hold time, tDHb -80E/-800
-667
-53E
-40E
22
27
12
17
22
27
12
17
22
27
36 Write recovery time, tWR 3C 3C 3C
37 WRITE-to -READ co mm a nd de lay, tWTR -80E/-667/-53E
-800/-40E
//1E
28
1E
28
1E
28
38 READ-to -PRECHARGE co mm a nd d ela y,tRTP
1E 1E 1E
39 Memo ry ana lysis probe 00 00 00
40 Extension fo r byte s 41 and 42 -80E
-800/-667
-53E/-40E
00
00
30
00
00
36
06
06
41 MIN a ctive-to -a ctive/ref resh time , tRC2 -80E
-800/-667/-53E
-40E
//3C
37
39
3C
37
39
3C
37
42 MIN AU TO REFRESH-t o -ACTIVE/
AUTO REFRESH comm a nd pe riod , tRFC
4B 69 7F
43 SDRAM device MAX cycle time,t
CK(MAX)
80 80 80
44 SDRAM de vice MAX DQSDQ skew time ,tDQSQ
-80E/-800
-667
-53E
-40E
1E
23
14
18
1E
23
14
18
1E
23
45 SDRAM de vice MAX rea d d at a hold
skew fa ctor, tQHS
-80E/-800
-667
-53E
-40E
28
2D
1E
22
28
2D
1E
22
28
2D
46 PLL relo ck tim e 0F 0F 0F
Table 19: Serial Presence-Dete ct Matrix (con tinued )
Byte Description Entry (Version) 512MB1 1GB 2GB
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PDF: 09005a ef80e5e752/Source : 09005a ef80e5e626 Micron Technolog y, Inc., reserves t he rig ht to cha ng e pro ducts or specif ica t ions w ithout no t ice.
HTF18C64_128_256x72.fm - Rev. E 3/07 EN 17 2003 Micron Technolo gy, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMSerial Presence-Dete ct
Notes : 1. The 512MB module is not available in -80E, -800, or -667 speed g rades .
2. Th e tRC SPD va lues sho w n a re JEDEC DDR2 de vice specificat ion va lues. The a ctua l Micron
DDR2 device specifica tio n is tRC = 55ns for all speed gra des.
4761 Optional fea tures, not supported 00 00 00
62 SPD revision Relea se 1.2 12 12 12
63 Checksum f or b yte s 062
ECC/ECC a nd pa rit y
-80E
-800
-667
-53E
-40E
F5/F95C/60
2E/32CF/D3EA/EE
95/99FC/00
4F/53F0/F4/0B /0F
B6/BA1D /21
64 Ma nuf a cturers JEDEC ID cod e MICRON 2C 2C 2C
6571 Ma nuf a cturers JEDEC ID cod e (co nt inued) FF FF FF
72 Manufa cturing locat ion 112 010C 010C 010C
7390 Module part number (ASCII) Va ria b le da t a Va ria b le da t a Va ria b le da t a
91 PCB ide ntification cod e 19 0109 0109 0109
92 Identification code (continued) 0 00 00 00
93 Yea r of ma nufa cture in BCD Va ria b le da t a Va ria b le da t a Va ria b le da t a
94 Week of ma nufa cture in BCD Va ria b le da t a Va ria b le da t a Va ria b le da t a
9598 Module serial number Va ria b le da t a Va ria b le da t a Va ria b le da t a
99127 Reserved fo r ma nufa cturer-specific dat a 00 00 00
128255 Reserved for customer-specific data FF FF FF
Table 19: Serial Presence-Dete ct Matrix (con tinued )
Byte Description Entry (Version) 512MB1 1GB 2GB
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8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900prodm ktg @micron.com w w w.m icro n.co m Custom er Co mm en t Line: 800-932-4992
Micron, the M logo, and t he Micron logo are trade marks of Micron Technology, Inc. All other t rademarks are the prop-erty of their respective ow ners. This data sheet contains minimum and maxim um limits specified over the completepow er supply and tem perature range f or production devices. Although considered final, these specifications are sub-
ject to chan ge , a s f ur th er produ ct de ve lo pm en t an d da ta characte riza tion sometimes o ccur.
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMMModule Dimensions
PDF: 09005a ef80e5e752/Source : 09005a ef80e5e626 Micron Technolog y, Inc., reserves t he rig ht to cha ng e pro ducts or specif ica t ions w ithout no t ice.
Module Dimensions
Figure 3: 240-Pin DDR2 RDIMM
Not es: 1. All dimensions are in millimet ers (inches); MAX/MIN or typical (TYP) w here no ted .2. The d imensional diagra m is for reference o nly. Refer to the JEDEC MO document fo r com-
plete d esig n dimensions.
30.15 (1.200)
29.85 (1.175)
PIN 1
17.78 (0.700)
TYP2.50 (0.098) D
(2X)
2.30 (0.091)
TYP
5.0 (0. 197) TYP
123.0 (4.84)
TYP
1.0 (0.039)
TYP
0.80 (0.031)
TYP
2.00 (0.079) R
(4X)
0.75 (0.030) R
PIN 120
Front view133.50 (5.256)
133.20 (5.244)
63.0 (2.48)
TYP
55.0 (2.165)
TYP
10.00 (0.394)
TYP
Back view
PIN 240 PIN 121
1.37 (0.054)
1.17 (0.046)
4.00 (0.157)
MAX
U1 U2 U3 U4 U5
U6
U7
U8
U9 U10 U11 U12
U22U21U20U19U18
U17
U16U15U14U13
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