8/14/2019 DC electric-field effect in bulk and thin-film Ge 5 As 38 Te 57 chalcogenide glass
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Vacuum 59 (2000) 845}853
DC electric-"eld e!ect in bulk and thin-"lm Ge
As
Te
chalcogenide glass
A. Abdel-All*, A. Elsha"e, M.M. Elhawary
Physics Department, Faculty of Science, Helwan University, Cairo, Egypt
Physics Department, Faculty of Science, El-Menouxa University, Shebin El-Koom, Egypt
Abstract
The electrical properties of Ge
As
Te
have been carried out as a function of temperature at di!erent dc
electric "elds for the bulk and thin "lms. This material shows a non-ohmic behaviour by switching to
a negative resistance state. The activation energy was found to decrease slowly as the electric "eld increases
and increases again before switching to the negative region. The conduction is simply a "eld-dependent
hopping mobility at low "elds. The high-"eld conduction mechanisms have been explained in terms of thePoole}Frenkel e!ect and Schottky emission of carriers which is applicable to both bulk and thin
"lms. 2000 Elsevier Science Ltd. All rights reserved.
Keywords: Chalcogenide; Switching; Electric "eld
1. Introduction
Many studies have been made on the switching phenomena in chalcogenide glasses and thecause of the switching phenomena has been classi"ed into those initiated thermally [1,2] and thoseinitiated electronically [3,4]. Ovshinsky [5] discussed the major features of switching phenomena
in TeAsSiGe . Mehra et al. [6] reported the thermally initiated switching characteristic inbulk Se-Te-Ge systems. They found that
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