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High quality and innovation
Automotive discrete solutions
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Automotive discrete solutions
As automotive manufacturers strive for convenient body applications, new
safety systems, infotainment systems, and efficient powertrain solutions,
the semiconductor content of vehicles is rising and electronic systems arebecoming more complex. Consequently, semiconductor suppliers must
meet increasingly severe requirements.
Benefit from our experience
NXP is the global leader in automotive MOSFETs and a global supplier of
small-signal discretes with more than 50 years experience in developing
and producing diodes and transistors.
Airbag control
}Low VF(MEGA) Schottky rectifier
}Low VCEsat
(BISS) transistors
}General-purpose transistors
}Switching diodes
Body Control Unit
}Low VF(MEGA) Schottky diodes
}Low VCEsat(BISS) transistors}MOSFETs
}TVS and ESD protection diodes
}Shunt regulators
Interior lighting}Low V
F(MEGA)
Schottky rectifier
Door module
}Low VF(MEGA)
Schottky rectifier
}Low VCEsat
(BISS)
transistors
}Small-signal
MOSFETs
}General-purpose
transistors}ESD protection
diodes
Fuel injection
}Power MOSFETS
}TVS
BS module
Low VF(MEGA)
Schottky rectifier
Low VCEsat
(BISS)
transistors
ESD protection
diodes
Daylight beam
}Low VF(MEGA)
Schottky rectifier
Automotive power
}TVS diodes
}Low VF(MEGA) Schottky diodes
}Low VCEsat(BISS) transistors}Wide range of automotive grade Power MOSFETs:
- Steering
- Braking / stability
- Body control
- Engine management
- Fan control
- Transmission
- Water pump
Automotive networking
}ESD protection diodes
e.g. MMBZ and PESDXCAN-series
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Combining our expertise in both automotive and discrete
solutions, we offer an extensive portfolio of discrete
components from small-signal to power. We help automotivesystem suppliers meet the rigorous and diverse technical
demands of automotive electronics by focusing on four
key elements high automotive-grade quality, sustainable
environment, secure supply and an innovative product
portfolio.
Quality
All our facilities are certified accordingto ISO / TS 16949:2002,
and our products are qualified with respect to
AEC-Q 100/101 stress test qualification for automotive-
grade discrete semiconductors. We offer full support onQS9000 based PPAP documentation, and our Zero Defects
Breakthrough Program is part of NXPs excellence approach.
The Green Car
NXP has enabled innovative breakthroughs that have led to
significant efficiency improvements. As the car evolves from
the internal combustion engine through micro- and mild-
hybrids to full electrical vehicles, the only differences in the
driving experience for drivers and passengers should be
positive. And as an innovative leader in discrete solutions, our
semiconductors are helping this happens.
Supply
Our manufacturing facilities are fully vertically integrated
and deliver optimized high-volume production. We offer the
highest capacity in the industry for various packages, including
SOT23 and LFPAK, and make continuous investments in new
capacities. Were safeguarding the long-term availability of
our manufacturing processes and products, so our automotive
customers can count on a secure supply.
Product innovationProduct innovation is based on three key innovation drivers:
1) improve power efficiency, 2) offer system protection
solutions, and 3) provide miniaturization and integration
to simplify design and reduce costs. We lead the way with
power-efficient low VCEsat
(BISS) transistors and low VF(MEGA)
Schottky rectifiers, and have dedicated protection solutions for
automotive networking
The leading supplier
Automotive trend Requirements for discretes NXP discrete solutions
More electronics, more power,
lower losses
Power up, losses down
Low VF(MEGA) Schottkys, low V
CEsat(BISS)
transistors, power and small-signal MOSFETs
medium power capability in smallest
packages, low power consumption
More electronics, thus more
ESD-sensitive interfacesIncrease ESD robustness
ESD protection portfolio, 1-18 lines,
High ESD robustness up to 30 kV,
dedicated automotive bus protection
Proven quality standards
Highest product reliability
AEC-Q100/101 compliance
Long-term supply guarantee
Continuous certification program,
zero defects breakthrough program,
robust, mature technologies and processes
Focus on cost Integration of functions
Broad range of integrated products:
diode arrays, double transistorsmatched pair transistors, Resistor-equipped
transistors (RETs), low VCEsat
(BISS) loadswitches
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Package innovations
Key applications of TVS diodes
}Power supplies / power management
}Surge protection
}Free wheeling diode for relay coil
Key applications of Schottky rectifiers
}Power management circuits, especially DC/DC converters
}Reverse polarity protection
}Free-wheeling diodes for inductive loads in motors and
relays
Package size
}Very flat and small packages
- SOD128 (3.8 x 2.5 x 1.0 mm)
- SOD123W (2.6 x 1.7 x 1.0 mm)
Key benefits
}Highest values for surge and power capability due to
clip-bond technology
}Low height for economic use of space
}AEC-Q101 qualified
}Pad layout compatible with SMA and SMB for easy
drop-in replacement
}Minimized outline and reflow soldering footprint
}Non-flammability classification UL 94V-0 and RoHS standards
compliance (Dark Green)
Key features and benefits
}Broad portfolio, supports all kinds of applications
}From 2 pin to 6 pin options
}Reduced size enables higher integration for smaller designs
}From very small (SOD882D: 1 x 0.6 x 0.37) to
medium-power packages with Ptot
= 1 W (SOT1061 and
SOT1118: 2.0 x 2.0 x 0.65)
}Broad portfolio with AEC-Q101 qualification
}Non-flammability classification UL 94V-0 and RoHS standards
compliance (Dark Green)
}SOD882D with solderable side pads for improved opticalinspection (AOI)
FlatPower packages
NXPs new FlatPower packages with clip-bond technology meet thedemand for thinner products with high power capabilities. Today a range of
28 medium-power, low VFrectifiers and 70 TVS diodes are housed in new
SOD123W and SOD128. They offer high power ratings similar to standard
SMA/SMB packages but occupy only half of the PCB area.
Leadless packages
We offer a very broad range of discrete functions in various leadless packages. Functions include
ESD protection, Zener, Switching, and Schottky diodes, low VCEsat
(BISS), Resistor-Equipped
Transistors (RETs), MOSFET solutions.
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LFPAK
Key benefits
}Low inductance
}Low thermal resistance
}Dimensions comparable to SO8
}Significantly thinner than SO8 & DPAK
}
Wirebond free - Cu clip design}High current transient robustness
}Avalanche Robust up to Tj(max)
}100% avalanche tested
}Automotive AEC-Q101 qualified to 175 C
}Leads are optical-inspection friendly
Target applications for LFPAK products
}Engine and transmission controllers
}Advanced braking systems
}Coolant pumps
}DC-DC converters
}Reverse battery protection
}General-purpose automotive switching where space is at a
premium
*1 x 300 m bond wire
LFPAK (SOT669) for high-density applications
NXP MOSFETs housed in the compact, thermally-enhanced
Loss Free PAcKage (LFPAK) are optimized for high-density
automotive applications. LFPAK delivers the ultimate
combination with ultra-low package resistance, superior
reliability and thermal performance. All this in a very smallpackage that ensures you can put power where you need it
most, anywhere in the car.
In automotive systems space is becoming a key issue,
especially under the hood. Todays MOSFETs need to provide
the absolute best thermal performance possible to enable
switching of loads requiring significant currents. In answer to
this, NXP has introduced the LFPAK to ensure a superior level
of on-resistance and thermal performance in an extremely
compact housing. The combination of NXPs TrenchMOS
technology and LFPAK delivers compact power to manyapplications that previously were limited to only large discrete
power packages.
The LFPAKs copper source clip design overcomes the
limitations of the standard SO8, resulting in thermal resistances
comparable to that of bigger packages such as DPAK. In
a traditional power package the main thermal pathway is
vertically down through the mounting and into the PCB.
However, the LFPAK also conducts a significant amount of heat
upwards and out through the source lead.
Fully qualified to meet the rigorous demands of the AEC-Q101
standard for discrete devices, these new products are aimed
at a variety of applications where size, thermal performance
and low cost manufacturing processes are critical design
considerations.
LFPAK case temperature is significantly lower than two SO8 packages, and
similar to single DPAK ( 1 W power dissipation on all three packages )
Real-estate benefits of using LFPAK
PCB area reduced
by more than 45%
LFPAK thermal conduction
Comparison between typical wirebonds and clip design
bra187
PCB PCB
Chip Plastic2 Part Leadframe
Package Lead/Wire Res (m)
LFPAK 0.31
DPAK* 2.21
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Power MOSFETs
Small-signal MOSFETs
NXP offers a highly flexible approach to power design for automotive systems.
NXP is a global leader in the area of discrete power MOSFETs for automotive systems. An in-depthunderstanding of automotive applications means NXP can deliver power semiconductor solutions
from its wide range of standard products or its capability to create unique custom offerings to
meet customer specific requirements.
Features and benefits
AEC Q101 compliant
Low conduction losses due to very low on-state resistance
Suitable for logic and standard level gate drive sources
Suitable for thermally demanding environments due
to 175 C rating
Applications
12 V automotive systems
Start-Stop micro-hybrid applications
Electric and electro-hydraulic power steering
Motors, lamps and solenoids
Transmission control
Our advanced MOSFET solutions deliver the flexibility and performance that todays marketdemands. Choose from a wide range of general-purpose MOSFET solutions : The N- and
P-channel enhancement mode Field-Effect Transistors (FET) are using Trench MOSFET technology
and are offered in various small SMD packages - from SOT23 down to the very small SOT883
(1 x 0.6 x 0.5 mm).
Key features and benefits
}AEC-Q101 qualified
}Logic-level compatible
}Trench MOSFET technology}Including types with ESD protection up to 3 kV
}Very fast switching
Applications
}High-speed line driver
}High/Low-side load switch e.g. motion control
}Relay driver}Switching circuits
}Fuel injection
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ESD protection diodes
NXP offers a series of ESD protection diodes specifically designed to protect
FlexRay bus, Controller Area Network (CAN) and Local Interconnect Network (LIN)
transceivers, as well as other ESD sensitive automotive electronic components.
In addition to human body protection according to MIL-STD-883 class 3,
these products comply with both IEC 61000-4-2 level 4 (air and contact discharge)
as well as IEC 61000-4-5 standards.
The PESD1LIN offers best-in-class ESD protection of one LIN bus line. The asymmetrical diode
configuration ensures optimized electromagnetic immunity of LIN transceivers.
Key features
ESD protection up to 30 kV
Excellent ESD clamping behavior
High peak pulse power (8/20 s)
performance
Ultra low leakage current
Low device capacitance
Key benefits
Increased system ESD robustness
Optimized protection with lowclamping voltages and fast response
times
Reduced overall power consumption
due to ultra low leakage current
Low device capacitance to avoid
unwanted circuit disturbances
Key applications
Automotive bus protection
Data and audio interfaces, e.g.car multimedia line protection
Overvoltage protection, e.g. airbag
controllers, ABS, ESC
Car drivers interface protection,
e.g. dashboard panels
LIN
Key features PESD1LIN
Bidirectional protection of one LIN bus line
in a very small SOD323 (SC-76) SMD plastic package
Max. peak pulse power: PPP
= 160 W at tp= 8/20 s
Low clamping voltage: V(CL)R
= 40 V at IPP
= 1 A
Ultra low leakage current: IRM< 1 nA
ESD protection of up to 23 kV
bra328
LINTransceiver
PESD1LIN
CMASTER/SLAVE
CBAT
24 V
Application (e.g. voltage regulator and microcontroller)
Power Application (e.g. electro motor, inductive loads)LIN Node
Connector
15 V
BAT
GND
LIN
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CAN
PESD1CAN and PESD2CAN provide bidirectional protection of two CAN bus lines with one single
SOT23 component. They can be used for both high speed and fault-tolerant CAN bus protection.
Key features PESD1CAN Bidirectional protection of two CAN bus
lines in one small SOT23 package
Very low capacitance CD= 11 pF
ESD protection of up to 23 kV
Key features PESD2CAN
Bidirectional protection of two CAN bus
lines in one small SOT23 package
Max. peak pulse power: PPP
= 230 W at tp= 8/20 s
Low clamping voltage: V(CL)R
= 34 V at Ipp
= 1 A
ESD protection of up to 30 kV
FlexRay
PESD1FLEX protects advanced FlexRay system
solutions supporting the high data rate
of 10 Mbits/s.
Key features PESD1FLEX
Bidirectional protection of two FlexRay bus
lines in one small SOT23 package
Very low capacitance CD= 11 pF at V
R= 0 V, f = 5 MHz
Ultra low leakage current: IRM
< 1 nA
ESD protection of up to 23 kV
MMBZ series
These device offer single line bidirectional ordual-line unidirectional transient overvoltage
protection in a small SOT23 package.
Key features
Common cathode or common anode configuration
Max. peak pulse power: Ppp
= 40 W at tp= 10/1000 s
Ultra-low leakage current: IRM
< 1 nA
ESD protection of up 30 kV
bra519
CG
CAN BUSTRANSCEIVER CAN
bus
PESD1CAN
PESD2CAN
SPLIT
2
3
1
RT/2
RT/2
CANH
CANLcommon
mode choke(optional)
006aab053
FlexRay
TRANSCEIVER
FlexRay
bus
common
mode choke
(optional)BM
RT/2
RT/2
CG
PESD1FLEX
BP
2 1
3
Example MMBZ series application
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TVS diodes
Housed in very flat SOD128 or SOD123W packages, these Transient Voltage Suppressor (TVS)
diodes save board space while guaranteeing industry-leading surge protection up to 600 W.
Key features and benefits
}High Power rating: 400/600 W peak pulse
}Small plastic packages SOT23/SOD123W/SOD128
}Very high surge/PCB area ratio
}Very low reverse leakage current (down to
1 A typical)
}Dark Green packages free of halogens and
antimony oxides
}AEC-Q101 qualified
Key applications
}Power supplies /
power management
}Surge protection
}Free wheeling diode
for relay coil
Low VCEsat
(BISS) Transistors
Key features
Reduced thermal and electrical
resistance
Low collector-emitter saturationvoltage V
CEsatdown to 30 mV
Up to 8 A collector current capability IC
Up to 20 A peak collector current ICM
High current gain hFE
- even at high IC
High performance/board space ratio
AEC-Q101 qualified portfolio
Breakthrough In Small-Signal (BISS) transistors offer best-in-
class efficiency, reducing heat generated on your board, thus
providing an ideal solution in temperature critical environments.
Low VCEsat(BISS) transistors are cost-effective alternatives tomedium-power and power transistors. Current capability ranges
from 1 8 A in various plastic SMD packages.
Key benefits
Less heat generation, higher circuit
efficiency
Solution for high ambient temperatureapplications
Cost effective replacement of medium
power transistors
Increased performance from
small-signal discrete footprints
Key applications
Applications in temperature critical
environments, e.g. in engine or
dashboard mounted components) High- and low-side switches, e.g.
in control units
Medium power DC/DC conversion
Drivers in low supply voltage
applications such as fans and motors
Inductive load drivers, e.g. relays,
buzzers
MOSFET drivers
DC/DC converter
MSD923
CONTROLLER
VCC
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0
RETs - Resistor-equipped transistors
Key features Transistor and two resistors
integrated in one package
Broad 100 mA product range in various
packages
500 mA portfolio with several resistor
combinations in SOT23 and SOT457
(SC-74)
BISS RET portfolio in SOT23,
PBR series
AEC-Q101 qualified
Complete range of Double RET inSOT363/457
NXP offers an extensive portfolio of single and double 100 mARETs for standard small-signal digital applications.
For requirements at higher currents, 500 mA RETs and BISS RETs
combine a transistor with two resistors to provide an integrated
solution for digital applications in automotive systems, for
example control units.
Key benefits
Lower handling and inventory
costs
Reduced board space
Shorter assembly times and
reduced pick-and-place efforts
Simpler design process
Increased system reliability due
to fewer soldering joints
Key applications
Digital applications
Switching loads, e.g. for instrument
clusters
Controlling IC inputs, e.g. in engine
control units
bra182
R1control
input
power
supply
R2
R3
R4
Rload
Tr1Tr2
High-side switch
Low VF(MEGA) Schottky rectifiers
Maximum Efficiency General Application (MEGA) Schottky rectifiers offer extremely low forward
voltage drop during operation, resulting in high efficiency and reduced heat generation. Availablein various SMD package options from FlatPower SOD128 to the smallest leadless SOD882D
(1 x 0.6 x 0.37 mm).
Key features
Up to 5 A continuous current
capability IF
Ultra low forward voltage drop VF
Low reverse current IR
Low power dissipation
Integrated guard ring forstress protection
AEC-Q101 qualified portfolio
Key benefits
Low losses over the entire
current range
Less heat generation and therefore
increased reliability
Reduced board space
Increased performance from
small-signal discrete footprints
Key applications
Power management circuits
especially DC/DC conversion
Various rectifier circuits, e.g.
in airbag control units
Free wheeling diode for inductive
loads in relays and motors
Reverse polarity protection
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Standard Linear
Key benefits
Any output voltage in the given range can be set by just two
external resistors
Simple solution to achieve a stabilized voltage
3 versions: extra EMI ruggedness, enhanced stability area,
and standard version
Active output circuit for low temperature drift Low output noise
Key features
}Programmable output voltage from 2.5 V to 36 V
3 different voltage tolerances down to 0.5%
Typical output impedance of only 0.2
AEC-Q100 (Grade 1) qualified
Key applications Shunt regulator for a wide voltage range
Precision current limiter
Precision constant current sink
NXPs portfolio extension in 2011 includes TLVH431, shunt regulator in SOT23 with Vin= 20 V
max and V
REF= 1.24 V.
Voltage regulators in SOT223: NX1117 with max output current of 1A, adjustable from 1.25 V up to 18 V and several fixed output
voltage versions 1.2 - 12 V as well as the new automotive LDO NXV426x series.
NXPs portfolio of standard linear devices includes precision shunt-, and linear low drop-out
voltage regulators. The TL431 three-terminal shunt regulator family with an output voltage range
between VREF
= 2.5 V and 36 V, is to be set by two external resistors.
006aab592
VOUT
R1
R2
V+
VREF
TL431 shunt regulator
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www.nxp.com
2010 NXP Semiconductors N.V.All rights reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner. The information presented in
this document does not form part of any quotation or contract, is believed
to be accurate and reliable and may be changed without notice. No liability
will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other
industrial or intellectual property rights.
Date of release: November 2010Document order number: 9397 750 17007
Printed in the Netherlands
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