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Materials Science & Engineering
Program at KAUST
Husam N. [email protected]
Materials Science & Engineering
King Abdulla University of Science & Technology
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Energy Harvesting& Storage
Electronic &Magnetic Materials
Material Design &Synthesis
Material Science & Engineering Research Thrusts
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Energy Harvesting & Storage
SolarEnergy
Fuel CellsEnergyStorage
EnergyHarvesting
Electronic & Magnetic Materials
Polymer &Oxide
Electronics
Nano
ElectronicsMagneticMaterials
Theory &Modeling
Material Design & Synthesis
PolymersInorganicMaterials
MetallicNanostructure
Carbon BasedMaterials
Material Science & Engineering Research Thrusts
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Electronic Materials
Energy Storage
Atom Probe
TomographyElectronic Structure
Calculations
Polymeric
synthesis for
energy &
electronics
Magnetic Materials
Solar CellsSolid Oxide
Fuel Cells
Materials Science & Engineering Faculty
Nanodevices
Nanoscale
Characterization
Organic Electronics
& Organic
Photovoltaics
Inorganic
synthesis for
energy
applications
Magnetism
TheoryNanomaterial
Synthesis
Semiconductor
Spectroscopy
Carbon Based
Materials, Electron
Microscopy
Biomembranes
& Biophysics
Husam Alshareef Enzo Di Fabrizio Enrico TraversaUdoSchwingenschlogl Talaat Alkassab Tao Wu Iman Roqan
Osman Bakr Aurelien Manchon Aram Amassian
Affiliated Faculty
Pedro Costa Alex RothenbergerSahraouiChaieb
PierreBeaujuge
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Research Thrusts in Alshareef Group
Emerging Electronics
Energy Harvesting &
Storage
Nanomaterials & Devices
Prof. Husam Alshareef
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Three dimensional electrode design withpseudocapacitive oxide electrodes
W. Chen , R.B. Rakhi, L. Hu, Y.Cui, & H.N. Alshareef, Nano Letters 11, 5165 (2011).
MnO2depositedonsponge
Spongecoated withcarbonnanotubes
Alshareef [email protected]
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Three dimensional carbon fiber electrode design
Introduce carbon-fiber currentcollector into reaction vessel
Carbon microfiber inducessignificant morphological
changes in Co3O4 nanowiresassemblies
Carbon microfiber allows moreefficient electrolyte access andis completely surround by
Co3O4 nanowires
Nearly double the stored energydensity at the same powerdensity of the supercapacitors
R.B. Rakhi, W. Chen, H.N. Alshareef, Nano Letters 12, 2559 (2012)
Alshareef Group
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Printed electronics
The printed electronics & functional materials market is projected toshow significant growth, reaching $250B by 2025
Growth will occur in multiple segments, including electronics, displays, andphotovoltaic. Electronics is biggest driver
Polymers, low temperature processing, large area process to play major role
Alshareef Group
I kj i d i l (f l i )
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Inkjet printed active polymer (ferroelectric)memory on SABICs ULTEM
Low cost, large area electronicmemory on SABICs ULTEM
All-polymer including wiring
Solution deposition or inkjetprinting
Nonvolatile, read/writememory circuits
More complex, larger areadevice under development
U. Bhansali and H.N. Alshareef, Microelectronic Engineering (in press)
Alshareef Group
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10
Device Fabrication
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Research in Dr. Schwingenschlgls Group
Computational Physics and Materials Science (CPMS)
Dr. Udo Schwingenschlgl
First principles calculations Structural and electronic properties of nanostructured systems Particularly those including surfaces and interfaces
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Prof. Aram Amassian
E i PV h P t ti l t b L C t
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Low-Cost Materials Low-Cost InstallationLow-Cost Manufacturing
Emerging applications
SONY.netEarth-Abundant materials
Emerging PVs have Potential to be a Low CostSource of Clean Energy
Current organic PV World record: 12%
Prof. Aram [email protected]
K t ti d i t f ffi i
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Thin film
microstructure
Phase
separation
Deviceperformance
Thin film processingand
post-processing
Predictive modeling
-thermodynamics
-kinetics
Single
crystal
engineering
Key to continued improvement of efficiency:Materials Feedback loop
Molecular Design
Prof. Aram Amassian
U i l d i l f t lli i
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10-5
10-4
10-3
10-2
10-1
100
TES-ADT
TIPS-Pn
TCPS-CN-Pn
Mobility(cm
2/Vs)
TCPS-Cl-Pn
1.0 1.5 2.0 2.50.0
0.5
1.0
1.5
c/a
PCE
(%)
Working solar
cells
Working
transistors
SiO2
source drain
Si
semiconductor
2D powder3D powder
In-plane charge
transport
Vertical charge transport
X-ray scatteringX-ray scattering
ab
Unit cel l anisotrop y d etermin es wh ether mater ia l is sui table for electronics or for PV!
Universal design rules for crystalline organicsemiconductors
Prof. Aram [email protected]
C ll id l Q t D t PV d b
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2005 2006 2007 2008 2009 2010 2011 2012 20130
1
2
3
4
5
6
7
8
AM
1.5Pow
erConversionEfficiency
Publication year
Tang et al, Nat Mat2011
Ip et al, Nat Nanotech 2012
%
8.5%
Colloidal Quantum Dot PVsprocessed byspin-coating
Prof. Aram [email protected]
Prof Pierre M Beaujuge & Group
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Prof. Pierre M. Beaujuge & GroupMaterials Science & EngineeringChemical Sciences
P. M. Beaujuge* & J. M. J. Frchet* JACS,2011, 133, 2000920029
Research in the Group
Macromolecules for Energy Storage & Delivery
Organic materials for Solar Cells & Electronics
Organic-Inorganic Hybrids for Nano-Electronics
Surface/Interface Engineering
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Material Design
& Synthesis
Fundamental Material
Characterization
Device Testing &
Characterization
Device Optimization
& Innovation
Identify Technological
Barriers and Challenges
Intellectual
Property
e.g. harvesting of lightcharge generationcharge transport & collection
Technology
Transferpower conversion efficiency
organic & inorganicnanocomposites
e.g. polymeric &small molecule
semiconductors
carrier dynamics
e.g. morphologyprocessing
structural analysis
spectroscopy
Organic Solar Cells
From material design to deviceoptimization
Prof. Pierre Beaujuge
Group Record: 8 5% P f Pi B j
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Group Record: 8.5%(single cell)
C. Cabanetos, A. El Labban, J. A. Bartelt, J. D. Douglas, W. R. Mateker, J. M. J. Frchet, Michael D.McGehee, & Pierre M. Beaujuge* JACS,2013, Just Accepted
0.0 0.2 0.4 0.6 0.8 1.0-14
-12
-10
-8
-6
-4
-2
0
J(mAcm
-2)
V
(2EH/C8)
(2EH/C7)
(2EH/C6)
a) 400 500 600 7000.00.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
E
QE
Wavelength (nm)
(2EH/C8)
(2EH/C7)
(2EH/C6)
b)
TEM (KAUST)PBDTTPD(2EH/C8)
EQE>60%
Prof. Pierre Beaujuge
PI: Osman M Bakr
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Incident
light
Transparent
anode
Ac velayer
Nanopar cle
Cathode
23
Centrifugation
Nanopart ic les for Solar
Cells and Op toelectron ics
Advanced Nanopart ic le Separat ion
and Character izat ion Methods
Bakr et al., Nanoscale10.1039/C3NR00990D (2013)Bakr et al., Nano Letters, 12, 1007 (2012)Bakr et al., Nature Comm unicat ions,2, (2011)
Bakr et al., Nanoscale, 4, 4269 (2012)Bakr et al., Journal of the Amer ican Chemical Society, 134, 11856 (2012)Bakr et al., Journal of Opt ics, 12, 065001 (2010)Bakr et al., Plasmonics, 5, 85 (2010)Bakr et al., Ang ewandte Chem ie. Int. Ed., 48, 5921 (2009)
! "#$%&' () *+ , !-
! ". *%&' (#/-
! ") //%&' (01-
2 nm
PI: Osman M. BakrAssistant Professor
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Optical spectroscopy lab is designed to
understand the behavior of the materialsand devices by mean of differentadvanced optical characterization.
For example: Photoluminescence Photoluminescence
excitation Time-resolved
spectroscopy (using
streak camera) Absorption Electroluminescent Micro-Photoluminescence
Optical Characterization of Semiconductors
Prof. Iman Roqan
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III-Nitrides for blue and UVLEDs we were successful toobtain deep UVluminescence (250 to 280nm) from AlGaN QWs by
investigating its structuraland optical properties.
Diluted magneticSemiconductors We are thefirst to obtain very strongferromagnetism from Gddoped ZnO by investigatingits magnetic and opticalproperties certain growthconditions.
0 2 4 6 8 10
distance (m)
4.50
4.51
4.52
4.53
4.54
4.55
4.56
centre
(eV)
Luminescence map
Prof. Iman Roqan
Optical Characterization of Semiconductors
Al d R th b
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Research interests
Synthetic inorganic chemistry; crystalline nanoparticles;coordination chemistry of novel anions
Solution-processable inorg anic mater ials for so larcells
Exploratory synthesis of crystalline or amorphousporous solids to discovernew m ater ia ls for o pt icalapplic ations , water-purif ication and gas-separatingmembranes.
Background
2002 Ph.D., University of Cambridge, United Kingdom 2007 Habilitation, University of Karlsruhe, Germany 2010 Visiting Scholar, Northwestern University, USA
since 3.2011 in KAUST
Alexander RothenbergerAssoc. Prof., Chemical Science
Prof. Alex Rothenberger
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Spintronics Theory GroupPrincipal Investigator: Aurelien Manchon, [email protected]
External CollaboratorsS. S. P. Parkin, IBM Almaden
P. Bhattacharya, U. Of Michigan
KAUST CollaboratorsU. Schwingenschlogl, MSE
X. X. Zhang, Core Labs
J. Kosel, EE
The Spintronics Theory Group
4 post-docs, 7 PhD students
20+ publications (PRL, NanoLetters, PRB, APL)
Power dissipation in CPUs
Energy saving overthe past 15 years hasresulted in a controlledincrease of the worldenergy consumption
source: IEA
Energy saving, and the use of energy
efficient devices, is a viable routetowards the control of energyconsumption.
Spin electronics, based on magneticnanodevices, is a solid response toreduce power loss in microelectronics
devices and system
One solution: energy saving
Towards energy efficient devices based on spin electronics
Significant increase of thermal lossLimits speed and density of chips
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Nov. 2012: Everspin Technologies leads the industry in commercializing the first Spin-TorqueMagnetoresistive RAM (ST-MRAM)
Dec. 2012: Toshiba's New STT-MRAM Beats SRAM Power Drain by 90%
Spintronics for non-volatile magnetic memories
Conventional SemiconductorTechnology
Volatility: maintaining the information in D&SRAMrequires regularrefreshingScalability: requires a large number of transistors andreducing the size of chip enhances leakage current
Large power dissipation Supercomputers will require the equivalent of a
nuclear power plant to operate
Magnetic Random AccessMemories
- Magnetic storage rather than charge storage- Fundamentally non-volatile- Controlled electrically (spin torque)- Reduce leakage current
Main challenge: reducing the critical switching current by controlling of the device physi
Random access memories (RAM) and RF-oscillators are key components ofcomputers
Scalable, intrinsically non-volatileDenser, faster,cheaper!!
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Spin diffusion in Magnetic tunnel junctionsCollaboration with UMP CNRS/Thales
Manchon et al., Physical Review B 2012
Objective: controling the current density required to write the bit of information by
structural design
Exploiting Ferroelectric barriers
Useinov & Manchon, submitted to Physical Review B
Available on ArXiv.org
Asymmetric Magnetic tunnel junctionsCollaboration with Samsung
Oh, Park, Manchon et al., Nature Physics 2009
(This work has been realized prior to KAUST)
Spintronics for non-volatile magnetic memories
We showed that by fabricating asymmetricalstructures, it is possible to dramatically improve the
junction performances by quenching current-inducednoise.
We predict that by controlling the spin transport in themetallic electrodes (spin dephasing/diffusion), one canmodify the voltage dependence of the torque.
Experimentalconfirmation of thisprediction is currentlycarried out atCNRS/Thales
We propose that using ferroelectric barriers instead ofconventional oxides (i.e. BaTiO3 rather than MgO)may result in additional tunability of the spin torqueeffect.
Depending on the junctionparameters, the spin torquecan be enhanced, quenchedand even become asymmetric(diode-like behavior). Couplingferroelectricity with spin torque
opens new avenues forswitching current reduction
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Rashba Spin-orbit torque in single magnets
X. Wang and A. Manchon, Phys. Rev. Lett. 2012
Hang et al., Appl. Phys. Lett 2013; Ortiz Pauyac et al., Appl. Phys. Fett. 2013
Proposing a new paradigm: exploiting interface-controlled spin orbit coupling
Experimental observation
Miron Nature 2010, 2011Liu PRL 2011, Science 201
Instead ofspin transfer torque we proposed
Spin orbit torque (Manchon PRB 2008, 2009).Works in single ferromagnets, offers large flexibilityfor devices (including memories and oscillators)
Beyond spin transfer torque MRAM
We theoretically identify the nature of the spin-orbit torque in very simple structures. This pavesthe way to memory devices containing a single
magnetic layer
Interfacial control of domain wall motionCollaboration with IBM
Spin Hall torque in single magnetsCollaboration with NIST, Postech, Korea U.
Haney et al., Physical Review B 2013
Spin Hall effect is an alternative way to produce thisspin orbit torque. This effect is studied in details andpresents different characteristics compared to Rashbatorque.
Grytsyuk et al., to be submitted to Physical Review Letters
We theoretically show how interfacial design can leadto specific spin configuration that results inoutstanding properties of magnetic domain walls.
Ultra high density magnetic data storage
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Ultrafast demagnetization and switching
Manchon et al., Physical Review B 2012
Ultra-high density magnetic data storage1997-now: Giant Magnetoresistance led to high density data storageA. Fert & P. Grunberg, Nobel Prize 2007
2012: Seagate paves the way for big hard drive capacity gainsThe limit of 1Tbit/inch2 is beaten
Spin current generation for dissipationless devices
Also (on-going)Non-equilibrium heat managementThermal storage in ferrimagnetsMagnon-induced torque
Spin-relaxation in SemiconductorsCollaboration with the U. of Michigan
Banerjee et al., Nano Letters 2011; Physical Review B 2012
Generating spin currents in nanostructuresCollaboration with Fudan & JAEA, Japan
Wang et al. Physical Review B, Rapid Communication 2013
The control of magnetization by femto-second lasersoffers fantastic opportunities for ultrahigh densitystorage and ultrafast recording. We propose a modelto describe this effect
This joint experimental/theoretical study addresses theorigin of weak spin relaxation in InGaN nanowires,demonstrating the capacities of this materials for
semiconductor spintronics such as spin lasers and spinlogic
We showed that pure spin currents can be obtained insimple metallic structures by interfacial design. Thisproposal could have significant implications in charge-less
spin devices.
Alexander Rothenberger
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Prof. Tom WuNew lighting materials/devices
The first tin oxide based
light-emitting diode
NPG Asia Mater. 4, e30 (2012)
Solar cells made of complex oxides
Complex oxides like SrTiO3offer novel
functionalities due to strong correlated
electrons, spin, orbital and lattice.
AIP Ad vances2, 042131 (2012)
Alexander RothenbergerAssoc. Prof., Chemical Science
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Prof. Tom Wu
Electric double layer transistor using oxide channels
Phys. Rev.B 87, 155151 (2013).
Exchange bias and spin glass in magnetic oxide heterostructures
Phys. Rev.B87, 054428 (2013).
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MSE Curriculum
M t D (MS)
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Masters Degree (MS)
MS Thesis option
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12 credits of thesis research (MSE 297) or
12 of internship (MSE 295), but internship must berelated to thesis
Other variation are possible, but these are themain two options
Please consult MSE curriculum & your academicadvisor
MS Thesis option
MS N Th i ti
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MS Non-Thesis option
Students must complete the remaining 6 credits in one or a combination ofthe following
PhD Degree
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PhD Degree
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Students entering with a masters degree typically have to take four classes
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