Download - Advanced RF integration for LTE smartphones - en.tdk.eu · PDF fileAdvanced RF integration for LTE smartphones . ... like carrier aggregation, ... 1800 . 1850 . 1900 . 1950 . 2000

Christian Block CEO and CTO of the Systems, Acoustics, Waves Business Group

CTO and Member of the Management Board of EPCOS AG November 12, 2014

Technologies & Products Press Conference 2014

Advanced RF integration for LTE smartphones

Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones

© EPCOS AG A TDK Company

CC • 11/14 • 2

LTE is the driver of future RF architectures

Miniaturization • Multiband / multimode architectures

in compact handsets • Low insertion height + small footprint Superior performance • High thermal and frequency stability • High power durability • Excellent electrical performance

(e.g. lowest losses, highest linearity) • Low costs Advanced architectures • Carrier aggregation • Envelope tracking • MIMO concepts

Challenges for RF modules

RF integration is the key enabler of next-generation smartphones.



CC • 11/14 • 3

Building blocks of the module integration architecture

High band (2300 – 2690 MHz)

e.g. bands 7, 40, 41, 30

Mid band (1710 – 2170 MHz)

e.g. bands 1, 2, 3, 4, 25, 34, 39

Low band (699 – 960 MHz)

e.g. bands 5, 8, 12, 13, 20,

26, 28, 29

Antenna(s) Antenna switches Duplexers

Power Amplifiers RF IC



CC • 11/14 • 4

Today’s RF module integration is mainly based on combining similar building blocks into one package

Evolving RF module integration strategy (1)

Example • Antenna switch modules • Duplexer banks

EPCOS duplexer bank module

High Band

Mid Band

Low Band





CC • 11/14 • 5

New features like carrier aggregation, envelope tracking and multimode/multiband power amplifiers are driving new integration schemes.




High Band

Mid Band

Low Band



CC • 11/14 • 6

The combination of different functions such as duplexers and antenna switches into multifunctional front-end modules increases the degree of integration and saves space.


EPCOS B5208 FEMiD module

Example • EPCOS front-end modules

with 6 integrated duplexers (FEMiD)



High Band

Mid Band

Low Band



CC • 11/14 • 7

Frequency separation is driving future integration

The next integration step is one fully integrated RF module for each frequency range, including multimode/multiband power amplifiers, duplexers, RF switches and RF matching.

Requirements of high-density integration of PAs with duplexers into PA based modules • Excellent RF performance

covering 0.5 to 3.5 GHz • High power capability /

thermal management • Smallest footprint in

combination with 0.80 mm height

• Highest cost efficiency



High Band

Mid Band

Low Band



CC • 11/14 • 8

Key technologies for RF modules

Advanced RF modules

• Wafer-based front-end technologies for PAs, switches and duplexers

• SAW and BAW filter technologies with low TCF

Micro-acoustic

technology

• Chip-sized SAW package (CSSP, CSSPlus, CSSP Cu)

• Die-sized SAW package (DSSP) • Thin-film acoustic package (TFAP)

Packaging technology

• Low-temperature co-fired ceramic (LTCC) • Semiconductor embedded in substrate

(SESUB) • Multilayer laminate

Module integration technology



CC • 11/14 • 9

Advanced micro-acoustic technologies improve RF filter performance

Reduction of losses to improve overall resonator Q • Lower insertion attenuation • Higher skirt steepness Improved piezoelectric coupling • Realization of filters for larger filter bandwidth • Prerequisite for efficient temperature compensation

technology

Temperature compensation technology • Reduced center frequency drift over temperature • Zero temperature drift for critical skirts

Standard performance without temperature compensation

Improved performance with temperature compensation



CC • 11/14 • 10

Compared to standard SAW • Lower |TCF| of ≈ 20 ppm/K • Lower losses • No spurious modes

Compared to standard SAW • Lower |TCF| of ≈ 20 ppm/K • Lowest losses @ 2 GHz • Hybrid BAW / SAW solutions possible

SAW and BAW filters with low |TCF| of ≈ 20 ppm/K

TCF = temperature coefficient of frequency

Two micro-acoustic technologies already available with temperature compensation

Temperature-compensated SAW duplexer for band 20

Hybrid BAW / SAW duplexer



CC • 11/14 • 11

Advanced TDK packaging technology platforms

• Designed for both discrete components and module integration • Support additional functionality (e.g. integrated or embedded passives) • Drive miniaturization and cost reduction • Offer improve thermal management and interconnect technology • Achieve low insertion of < 250 µm (DSSP and TFAP)

Flip-chip package Wafer-level package Bare die package

CSSP3 Glob-Top CSSP3 Cu frame DSSP TFAP

CSSP chip-sized SAW package DSSP die-sized SAW package TFAP thin-film acoustic package



CC • 11/14 • 12

• Die size = package size

• Low insertion height of less than 200 µm, including bumps

• Hermetic package withstands overmolding processes up to 80 bar

• Compatible with all micro-acoustic RF technology platforms

TFAP – ultra-thin package for all RF platforms WLAN module with TFAP BAW filter

TFAP BAW filter



CC • 11/14 • 13

TFAP process enables optimal RF performance

Frequency [MHz]

Atte

nuat

ion

[dB]

Before packaging After packaging

0

-10

-20

-30

-40

-50

-60

-70 1750 1800 1850 1900 1950 2000

TFAP package has no negative impact on RF or electromagnetic performance.



CC • 11/14 • 14

Integrated module development

• Integration of passive components

• Embedding of active components

• Multiple interconnect technologies (wire bond, SMD, solder balls, Cu pillars)

• Own high-volume LTCC production

• 3D electromagnetic simulation and co-design with duplexers

Buried inductor

Buried capacitor

Embedded ICs

With flip-chip and SMD components

LTCC

SESUB

Multilayer laminate

The combination of module integration technologies

enables perfect-fit solutions.



CC • 11/14 • 15

Roadmap

Module integration technology

Today Tomorrow

Multilayer substrates with passive integration

High-density 3D integration of active and

passive components

Micro-acoustic

technology |TCF| ≈ 20 ppm/K

700 to 2700 MHz

|TCF| < 10 ppm/K

400 to 4000 MHz

Temperature compensation and bandwidth

Packaging technology < 0.3 mm < 0.2 mm

Insertion height of filters and duplexers

Degree of integration

www.global.tdk.com • www.epcos.com