ACTFEL Device Modeling via SPICE
ACTFEL Device Modeling via SPICE
J. P. Bender and J. F. Wager
Department of Electrical and Computer Engineering
Center for Advanced Materials Research
Oregon State UniversityCorvallis, Oregon 97731-3211http://www.ece.orst.edu/~jfw
Organization:Organization:
• Fowler-Nordheim Diode Model
• Double-sheet Charge Model
Fowler-Nordheim Diode ModelFowler-Nordheim Diode Model
q
qm
mm
qJ B
B
FN 3
*24exp
*16
23
0
2
22
Fowler-Nordheim Diode model: Q-VFowler-Nordheim Diode model: Q-V
Fowler-Nordheim Diode model: C-VFowler-Nordheim Diode model: C-V
Fowler-Nordheim model: Transient
response
Fowler-Nordheim model: Transient
response
Fowler-Nordheim model: Transferred
Charge Curve
Fowler-Nordheim model: Transferred
Charge Curve
Fowler-Nordheim Model
Experimental Data
FN Model Scaling with Varying Vmax
FN Model Scaling with Varying Vmax
Modified Fowler-Nordheim Diode ModelModified Fowler-Nordheim Diode Model
Double-sheet Charge ModelDouble-sheet Charge Model
Two-sheet Charge Model Band DiagramTwo-sheet Charge Model Band Diagram
Two-sheet Charge Model Equivalent Circuit
Two-sheet Charge Model Equivalent Circuit
Two-sheet Charge ModelTwo-sheet Charge Model1. Emission Mechanisms
– Field emission (pure tunneling)
– Thermal emission– Trap-to-band impact ionization
2. Charge CaptureThe probability that an electron crossing a sheet of charge is captured depends on:– Electric field at the sheet– Occupancy of the sheet
Two-sheet Charge ModelTwo-sheet Charge ModelSpace Charge Creation via Field Emission
Two-sheet Charge ModelTwo-sheet Charge ModelSpace Charge Creation via Trap-band Impact Ionization
Two-sheet Charge Model: Static Space Charge
Two-sheet Charge Model: Static Space Charge
• Ionized traps are not allowed to refill
• B= 1.5 V (experimental value)
• Bulk trap depth = 1.38 V
Transferred Charge Capacitance Overshoot (Two-sheet charge model)
Fowler-Nordheim Diode model
Experimental Data
ConclusionsConclusions
Fowler-Norheim Diode• Simple yet accurate SPICE model for
devices without space charge
Two-sheet Charge Model• Demonstrates mapping of device
physics to SPICE• Large amounts of C-V overshoot in
SPICE
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