ZENER DIODE RD [ ] JS, RD [ ] ES, RD [ ] E, RD [ ] F ... (c) Zener voltage test method A Zener diode...
Transcript of ZENER DIODE RD [ ] JS, RD [ ] ES, RD [ ] E, RD [ ] F ... (c) Zener voltage test method A Zener diode...
1. INTRODUCTIONNEC introduced products of Zener diodes in RD [ ] Series early in Japan and then increased their product lines
from RD [ ] A to RD [ ] D. High reliability performance proved with our Zener diodes has been highly evaluated
by the users in various application fields.
NEC has added new product lines of planar type DHD structure Zener diodes. They are: RO [ ] ES, RD [ ]
E and RD [ ] F Series, general purpose diodes of 400 mW, 500 mW and 1 W respective, and RD [ ] JS Series,
diodes of 400 mW and with sharp VZ-IZ characteristics and low noise. At the same time, existing B Standard, in which
Zener voltage tolerance is ±5 %, is subdivided into B1 to B4 in order to meet requirements for narrower tolerance.
Standardized products conforming to these subdivided standards are introduced.
The Zener diodes in these newly established product lines have improved reliability due to their planar type, small
size and light weight realized by the DHD structure, and uniform quality as a result of improved mass production
processes. They are, we believe, most appropriate for communications equipment, instruments, various industrial
machines, and general appliances.
Following sections explain their characteristics and reliability in detail for recommending users to employ them.
2. STRUCTUREThe structure of this new product Zener diode is shown in Fig. 1. As can be seen in the figure, a planar Zener
diode chip is squeezed between two lead terminals (heat sinks) and they are enclosed in a glass tube. They are fused
at a temperature as high as 600 ˚C to 800 ˚C and then cooled to be fixed. Expansion coefficients of the materials,
or the terminals and glass, are properly selected so that the chip and terminals are, when cooled to a room temperature,
strongly pressed.
This diode has, although it is very small and light weight, the feature of low thermal resistance because the silicon
chip is cooled in both sides by two heat sinks.
Lead
Heat sink
Silicon chip
Glass seal (glass tube)
Fig. 1 Structure of DHD Type Zener Diode
1982©Document No. D11049EJ2V0AN00 (2nd edition)(Previous No. SEB-1002)Date Published January 1996 PPrinted in Japan
ZENER DIODE RD [ ] JS, RD [ ] ES, RD [ ] E, RD [ ] FCHARACTERISTICS & RELIABILITY
2
In the planar type chip, the peripheral portion of the PN junction has, as shown in Figs. 2(a) and 2(b), a double
diffusion structure. The breakdown voltage is higher at junction J2, where the diffusion layer is thicker, than at J1.
Therefore, breakdown on a normal Zener current occurs only in main junction J1. Under normal operating condition,
junction J2 is kept at a voltage lower than the breakdown voltage of main juction J1 to permit flow of a slight reverse
current. However, the junction is quite stable because its surface is protected by a silicon oxide (SiO2) coating. This
means that the Zener voltage is hard to be affected by the surface condition of the junction because breakdown occurs
always within the junction.
P
N N+
Electrodes
Oxidizedsilicon(SiO2)
J1 J2
N N+
J1 J2P
Electrodes
Oxidized silicon(SiO2)
(a) RD [ ] ES, RD [ ] E, RD [ ] F Series (b) RD [ ] JS Series
Fig. 2 Planar Type Zener Diode Chip
In RD [ ] JS Series, low noise and the sharp rise-up VZ-IZ characteristic are achieved by making the main junction
area very small, as shown in Fig. 2(b), increasing current density, and uniforming the junction and dynamic resistance
is decreased by increasing impurity atom concentration.
3. RATINGS AND CHARACTERISTICS
1) MAXIMUM RATINGS
Table 1 lists ratings of these planar type DHD structure Zener diodes in various series. The diodes have, as has
been described above, greater heat radiating effect by lead terminals in comparison with glass-sealed or silk-
hat-shaped ones and thermal resistance between the junction and periphery varies with length of leads and area
of printed foil.
Figs. 3, 4, and 5 show relationship between junction-to-periphery thermal resistance and printed foil area when
packaged with lead length as a parameter in RD [ ] JS, RD [ ] ES, RD [ ] E, and RD [ ] F Series. Figs. 6,
7, and 8 give TA-P rating curves under actual packaging conditions obtained from data shown in above figures.
Table 1 Maximum Ratings
Items SymbolsTypes
Units RemarksRD [ ] JS RD [ ] ES RD [ ] E RD [ ] F
Power Dissipation P 400 400 500 1000 mW TA = 25 ˚C (Note)
Junction Temperature Tj 175 ˚C
Storage Temperature Tstg –65 to +175 ˚C
Surge Reverse Power PRSM See Fig. 9
(Note) Refer to Figs. 6, 7 and 8.
3
0 20 40 60 80 100
100
200
300
400
500
600
The
rmal
Res
ista
nce
Rth (
˚C/W
)
Area of P.C. Board S (mm2)
Junctionto ambient
0 20 40 60 80 100
100
200
300
400
500
600
The
rmal
Res
ista
nce
Rth (
˚C/W
)
Area of P.C. Board S (mm2)
Junctionto ambient
= 10 mm
= 5 mm
= 10 mm
= 5 mm
Fig. 3 RD [ ] JS, RD [ ] ES R th-S Characteristics Fig. 4 RD [ ] E R th-S Characteristic
0 20 40 60 80 100
40
80
120
160
200
240
The
rmal
Res
ista
nce
Rth (
˚C/W
)
Area of P.C. Board S (mm2)
Junctionto ambient
= 10 mm
= 5 mm
= 20 mmS
Fig. 5 RD [ ] F R th-S Characteristic
4
20 40 60 80 100 120 140 160 180 2000
100
200
300
400
500
Ambient Temperature TA (˚C)
P -
Pow
er D
issi
patio
n -
mW
7 mm P.C. Boardt = 0.035 mm= 3 mm
= 5 mm= 10 mm = 3 mm
= 5 mm= 10 mm
3 mm P.C. Boardt = 0.035 mm
20 40 60 80 100 120 140 160 180 2000
100
200
300
400
500
600
Ambient Temperature TA (˚C)
Pow
er D
issi
patio
n P
(m
W)
= 10 mm
= 5 mm
10 mm
7 mm P.C. B.t = 0.035 mm
3 mm P.C. B.t = 0.035 mmφ
φ
Fig. 6 RD [ ] JS, RD [ ] ES P-T A Rating Fig. 7 RD [ ] E P-T A Rating
200 40 60 80 100 120 140 160 180 200
0.2
0.4
0.6
0.8
1.0
1.2
Pow
er D
issi
patio
n P
(W
)
Ambient Temperature TA (˚C)
7 mm P.C. B.
= 5 mm
= 10 mm
3 mm P.C. Bφ
= 5 mm
= 10 mm
Fig. 8 RD [ ] F P-T A Rating
5
Fig. 9 shows surge reverse current ratings for RD [ ] JS, RD [ ] ES, RD [ ] E, and RD [ ] F. Pay attention to
that ratings in RD [ ] JS Series are smaller because junction area is small as mentioned above.
1µ 5 µ 10µ 50µ 100 µ 500 µ 1 m 5 m 10 m 50 m 100 m1
5
10
50
100
500
1000
Pulse Width tT (s)
Sur
ge R
ever
se P
ower
PR
SM (
W)
PR
SM
tT
TA = 25 ˚CNon-repetitive
RD [ ] JS
RD [ ] E, RD [ ] ES
RD [ ] F
Fig. 9 P RSM Rating
2) ELECTRICAL CHARACTERISTICS
(i) Zener voltage (Vz)
(a) Family
Nominal voltage value of E24 Series is adopted in RD [ ] JS, RD [ ] ES, RD [ ] E, and RD [ ] F Series.
For Zener voltages, a family of standards with nominal voltage value ±5 % is provided. Also, subdivided
standards where voltages are subdivided into 2, 3, or 4 subdivisions of ±2.5 % are provided.
(b) Subdivided Zener voltage standards
With Zener diodes used for the power source of electronic equipment, narrower Zener voltage width has
become demanded year by year in order to improve precision, make compact, and reduce cost.
Series of subdivided standards listed in Table 2 have been established by NEC to meet this demand.
6
Table 2 System of V Z Subdivided
Zener Voltage VZRD [ ] JS RD [ ] ES RD [ ] E RD [ ] F
Suffix AB Suffix AB Suffix B Suffix B
Voltage ranges 4.7 to 39 V 2.0 to 39 V 2.0 to 200 V 2.0 to 82 V
Subdivided number 3 divisions 3 divisions 2.0 to 3.9 V : 2 divisions 2.0 to 3.9 V : 2 divisions
4.3 to 18 V : 3 divisions 4.3 to 39 V : 3 divisions
20 to 36 V : 4 divisions 4.3 to 82 V : 1 division
39 V : 7 divisions
43 to 200 V : 1 division
IZ conditions 5 mA 5 mA 2.0 to 10 V : 20 mA 2.0 to 10 V : 40 mA
11 to 20 V : 10 mA 11 to 20 V : 20 mA
22 to 56 V : 5 mA 22 to 82 V : 10 mA
62 to 100 V : 2 mA
110 to 200 V: 1 mA
ex)
VZ = 11 V article
(Tested with pulse
40 ms)
10.44 AB 11.56
AB1
10.44 11.88
AB2
10.76 11.22
AB3
11.10 11.56
10.18
AB
11.26
AB1
10.18 10.63
AB2
10.50 10.95
AB3
10.82 11.26
10.18
B
11.26
B1
10.18 10.63
B2
10.50 10.95
B3
10.82 11.26
10.22
B
11.43
B1
10.22 11.43
B2
10.54 11.09
B3
10.87 11.43
7
(c) Zener voltage test method
A Zener diode shows different Zener voltages in initial state of energizing and in steady state. The
difference between them depends on temperature rise caused by the current and on temperature
coefficients. Zener voltage test methods are specified for Zener diodes. Refer to Technical Material
APP-5, “Zener Voltage Test Methods of Zener Diodes” for details of the test methods. Table 3 lists those
test methods.
Table 3 Zener Voltage Test Methods
Types Test Methods
RD [ ] JS
RD [ ] EStested with pulse (40 ms)
RD [ ] E
RD [ ] F
(d) Tables 4, 5, 6 and 7 give Zener voltages under different Zener current conditions for RD [ ] JS, RD
[ ] ES, RD [ ] E, and RD [ ] F.
These tables are specially useful for Zener diodes of which Zener voltages are less than 5 to 6 V because
deviations of the center value and width of Zener voltages become larger in these diodes.
8
Table 4 RD [ ] JS Zener Voltage Subdivided (1/2)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 0.1 mA IZ = 0.5 mA IZ = 1 mA IZ = 5 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
AB1 3.10 3.60 3.72 4.20 3.94 4.37 4.42 4.61
RD4.7JS AB2 3.39 4.01 4.02 4.48 4.21 4.60 4.55 4.75
AB3 3.77 4.42 4.30 4.75 4.45 4.82 4.69 4.90
AB1 4.14 4.64 4.60 4.96 4.69 4.99 4.84 5.04
RD5.1JS AB2 4.49 4.96 4.83 5.15 4.89 5.17 4.98 5.20
AB3 4.86 5.23 5.07 5.33 5.09 5.34 5.14 5.37
AB1 5.14 5.46 5.24 5.51 5.27 5.52 5.31 5.55
RD5.6JS AB2 5.38 5.65 5.42 5.69 5.45 5.71 5.49 5.73
AB3 5.59 5.85 5.60 5.89 5.63 5.88 5.67 5.92
AB1 5.79 6.05 5.79 6.09 5.82 6.10 5.86 6.12
RD6.2JS AB2 5.99 6.26 5.99 6.30 6.60 6.93 6.06 6.33
AB3 6.19 6.46 6.19 6.50 6.22 6.51 6.26 6.53
AB1 6.40 6.66 6.40 6.70 6.43 6.71 6.47 6.73
RD6.8JS AB2 6.58 6.86 6.58 6.90 6.61 6.91 6.65 6.93
AB3 6.79 7.07 6.79 7.11 6.82 7.12 6.86 7.14
AB1 7.00 7.28 7.00 7.32 7.03 7.33 7.06 7.36
RD7.5JS AB2 7.22 7.52 7.22 7.56 7.25 7.57 7.28 7.60
AB3 7.45 7.76 7.45 7.80 7.49 7.81 7.52 7.84
AB1 7.68 8.01 7.70 8.06 7.73 8.07 7.76 8.10
RD8.2JS AB2 7.94 8.27 7.95 8.32 7.98 8.33 8.02 8.36
AB3 8.19 8.54 8.21 8.59 8.24 8.60 8.28 8.64
AB1 8.46 8.83 8.49 8.89 8.51 8.90 8.56 8.93
RD9.1JS AB2 8.75 9.12 8.77 9.18 8.80 9.18 8.85 9.23
AB3 9.03 9.42 9.06 9.48 9.09 9.49 9.15 9.55
AB1 9.33 9.75 9.35 9.82 9.39 9.83 9.45 9.87
RD10JS AB2 9.64 10.08 9.67 10.15 9.70 10.16 9.77 10.21
AB3 9.98 10.42 10.00 10.49 10.04 10.50 10.11 10.55
AB1 10.31 10.74 10.34 10.81 10.37 10.82 10.44 10.88
RD11JS AB2 10.63 11.07 10.65 11.14 10.69 11.16 10.76 11.22
AB3 10.95 11.41 10.98 11.46 11.01 11.50 11.10 11.56
AB1 11.28 11.81 11.30 11.82 11.34 11.83 11.42 11.90
RD12JS AB2 11.60 12.15 11.62 12.15 11.65 12.16 11.74 12.24
AB3 11.92 12.50 11.94 12.52 11.98 12.52 12.08 12.60
AB1 12.31 12.94 12.32 12.94 12.36 12.95 12.47 13.03
RD13JS AB2 12.74 13.39 12.75 13.39 12.78 13.40 12.91 13.49
AB3 13.19 13.84 13.20 13.85 13.23 13.86 13.37 13.96
9
Table 4 RD [ ] JS Zener Voltage Subdivided (2/2)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 0.1 mA IZ = 0.5 mA IZ = 1 mA IZ = 5 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
AB1 13.65 14.34 13.66 14.34 13.69 14.35 13.04 14.46
RD15JS AB2 14.14 14.85 14.15 14.85 14.17 14.86 14.34 14.98
AB3 14.64 15.36 14.65 15.36 14.68 15.38 14.85 15.52
AB1 15.14 15.84 15.16 15.84 15.18 15.86 15.37 16.01
RD16JS AB2 15.59 16.32 15.62 16.33 15.64 16.34 15.85 16.51
AB3 16.08 16.89 16.10 16.90 16.13 16.91 16.35 17.09
AB1 16.63 17.49 16.66 17.50 16.69 17.52 16.94 17.70
RD18JS AB2 17.22 18.13 17.25 18.14 17.28 18.16 17.56 18.35
AB3 17.83 18.78 17.88 18.80 17.91 18.81 18.21 19.03
AB1 18.46 19.42 18.53 19.43 18.57 19.46 18.86 19.70
RD20JS AB2 19.07 20.10 19.15 20.11 19.18 20.14 19.52 20.39
AB3 19.73 20.79 19.82 20.81 19.86 20.83 20.21 21.08
AB1 20.36 21.46 20.48 21.48 20.52 21.50 20.88 21.77
RD22JS AB2 21.00 22.14 21.14 22.17 21.18 22.18 21.54 22.47
AB3 21.66 22.82 21.82 22.86 21.86 22.88 22.23 23.17
AB1 22.30 23.65 22.50 23.68 22.53 23.69 22.93 23.96
RD24JS AB2 23.13 24.47 23.34 24.49 23.36 24.51 23.72 24.78
AB3 23.92 25.26 24.14 25.28 24.16 25.30 24.54 25.57
AB1 24.65 26.11 24.79 26.16 25.20 26.50
RD27JS AB2 25.58 27.11 25.70 27.15 26.19 27.53
AB3 26.54 28.16 26.64 28.18 27.21 28.61
AB1 27.49 29.17 27.58 29.21 28.22 29.66
RD30JS AB2 28.40 30.18 28.49 30.21 29.19 30.69
AB3 29.36 31.18 29.45 31.22 30.20 31.74
AB1 30.30 32.17 30.37 32.22 31.18 32.78
RD33JS AB2 31.22 33.12 31.28 33.19 32.15 33.79
AB3 32.20 34.11 32.20 34.19 33.13 34.83
AB1 33.11 35.09 33.13 35.18 34.12 35.86
RD36JS AB2 34.00 36.06 34.02 36.15 35.07 36.87
AB3 35.06 37.06 34.98 37.16 36.07 37.91
AB1 35.89 38.05 35.90 38.15 37.04 38.94
RD39JS AB2 36.81 39.01 36.82 39.11 38.00 39.94
AB3 37.76 40.02 37.77 40.13 38.99 40.99
10
Table 5 RD [ ] ES Zener Voltage Subdivided (1/3)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 0.5 mA IZ = 1 mA IZ = 5 mA IZ = 10 mA IZ = 20 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
RD2.0ESAB1 1.30 1.53 1.46 1.67 1.88 2.10 2.07 2.33 2.28 2.58
AB2 1.40 1.61 1.58 1.76 2.02 2.20 2.22 2.44 2.45 2.69
RD2.2ESAB1 1.49 1.69 1.66 1.85 2.12 2.30 2.33 2.55 2.56 2.81
AB2 1.59 1.78 1.75 1.94 2.22 2.41 2.43 2.66 2.68 2.94
RD2.4ESAB1 1.66 1.87 1.84 2.03 2.33 2.52 2.55 2.78 2.81 3.06
AB2 1.73 1.96 1.91 2.12 2.43 2.63 2.66 2.90 2.92 3.19
RD2.7ESAB1 1.83 2.06 2.01 2.23 2.54 2.75 2.78 3.03 3.04 3.32
AB2 1.95 2.19 2.14 2.37 2.69 2.91 2.94 3.20 3.21 3.50
RD3.0ESAB1 2.07 2.32 2.28 2.51 2.85 3.07 3.11 3.36 3.39 3.66
AB2 2.21 2.44 2.42 2.63 3.01 3.22 3.28 3.51 3.56 3.81
RD3.3ESAB1 2.33 2.58 2.55 2.78 3.16 3.38 3.44 3.68 3.72 3.96
AB2 2.46 2.69 2.69 2.92 3.32 3.53 3.59 3.83 3.87 4.10
RD3.6ESAB1 2.59 2.83 2.83 3.07 3.47 3.68 3.74 3.97 4.01 4.23
AB2 2.80 2.98 2.97 3.22 3.62 3.83 3.89 4.11 4.07 4.34
RD3.9ESAB1 2.87 3.13 3.12 3.38 3.77 3.98 4.02 4.23 4.24 4.45
AB2 3.02 3.30 3.27 3.55 3.92 4.14 4.16 4.38 4.36 4.59
AB1 3.15 3.43 3.41 3.69 4.05 4.26 4.27 4.49 4.44 4.67
RD4.3ES AB2 3.32 3.59 3.57 3.85 4.20 4.40 4.41 4.61 4.57 4.78
AB3 3.47 3.76 3.73 4.01 4.34 4.53 4.53 4.72 4.66 4.88
AB1 3.63 3.93 3.89 4.18 4.47 4.65 4.64 4.82 4.76 4.95
RD4.7ES AB2 3.78 4.15 4.04 4.35 4.59 4.77 4.74 4.92 4.84 5.03
AB3 3.92 4.35 4.19 4.57 4.71 4.91 4.83 5.04 4.92 5.21
AB1 4.13 4.51 4.39 4.72 4.85 5.03 4.95 5.14 5.02 5.32
RD5.1ES AB2 4.28 4.74 4.56 4.93 4.97 5.18 5.05 5.27 5.11 5.45
AB3 4.51 5.06 4.76 5.19 5.12 5.35 5.18 5.42 5.22 5.45
AB1 4.77 5.29 4.99 5.43 5.29 5.52 5.33 5.56 5.35 5.58
RD5.6ES AB2 5.07 5.61 5.27 5.67 5.46 5.70 5.48 5.72 5.49 5.76
AB3 5.39 5.84 5.52 5.85 5.64 5.88 5.65 5.92 5.66 5.96
AB1 5.64 6.04 5.72 6.05 5.81 6.06 5.82 6.11 5.82 6.16
RD6.2ES AB2 5.87 6.22 5.91 6.23 5.99 6.24 5.99 6.29 6.00 6.34
AB3 6.06 6.38 6.08 6.39 6.16 6.40 6.17 6.45 6.19 6.49
AB1 6.22 6.57 6.24 6.58 6.32 6.59 6.33 6.64 6.34 6.69
RD6.8ES AB2 6.42 6.77 6.44 6.78 6.52 6.79 6.53 6.84 6.54 6.89
AB3 6.61 6.95 6.62 6.96 6.70 6.97 6.71 7.02 6.72 7.07
AB1 6.79 7.13 6.81 7.18 6.88 7.19 6.90 7.24 6.91 7.29
RD7.5ES AB2 7.03 7.38 7.04 7.39 7.11 7.41 7.13 7.45 7.15 7.49
AB3 7.24 7.62 7.25 7.62 7.33 7.64 7.34 7.68 7.35 7.73
11
Table 5 RD [ ] ES Zener Voltage Subdivided (2/3)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 0.5 mA IZ = 1 mA IZ = 5 mA IZ = 10 mA IZ = 20 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
AB1 7.47 7.88 7.48 7.88 7.56 7.90 7.56 7.94 7.58 7.99
RD8.2ES AB2 7.74 8.13 7.75 8.13 7.82 8.15 7.84 8.19 7.85 8.24
AB3 8.00 8.38 8.00 8.39 8.07 8.41 8.09 8.45 8.11 8.50
AB1 8.26 8.68 8.26 8.68 8.33 8.70 8.35 8.74 8.37 8.81
RD9.1ES AB2 8.53 8.96 8.54 8.96 8.61 8.99 8.63 9.02 8.66 9.09
AB3 8.81 9.24 8.81 9.24 8.89 9.29 8.90 9.30 8.93 9.37
AB1 9.08 9.56 9.09 9.57 9.19 9.59 9.19 9.63 9.20 9.70
RD10ES AB2 9.41 9.88 9.42 9.88 9.48 9.90 9.51 9.95 9.54 10.03
AB3 9.73 10.27 9.74 10.28 9.82 10.30 9.83 10.36 9.87 10.45
AB1 10.09 10.60 10.10 10.61 10.18 10.63 10.20 10.69
RD11ES AB2 10.41 10.91 10.42 10.91 10.50 10.95 10.52 11.00
AB3 10.73 11.23 10.74 11.23 10.82 11.26 10.84 11.32
AB1 11.04 11.60 11.05 11.61 11.13 11.63 11.15 11.70
RD12ES AB2 11.41 11.88 11.42 11.89 11.50 11.92 11.52 11.99
AB3 11.71 12.27 11.72 12.27 11.80 12.30 11.82 12.39
AB1 12.08 12.68 12.09 12.68 12.18 12.71 12.21 12.82
RD13ES AB2 12.50 13.13 12.50 13.13 12.59 13.16 12.63 13.27
AB3 12.94 13.58 12.94 13.58 13.03 13.62 13.07 13.73
AB1 13.38 14.04 13.39 14.05 13.48 14.09 13.52 14.20
RD15ES AB2 13.48 14.47 13.85 14.51 13.95 14.56 14.04 14.68
AB3 14.31 14.97 14.32 15.00 14.42 15.02 14.47 15.14
AB1 14.75 15.43 14.76 15.45 14.87 15.50 14.93 15.63
RD16ES AB2 15.21 15.90 15.23 15.94 15.33 15.96 15.40 16.08
AB3 15.64 16.37 15.66 16.39 15.79 16.50 15.84 16.58
AB1 16.14 16.96 16.15 16.97 16.34 17.06 16.34 17.18
RD18ES AB2 16.72 17.57 16.74 17.59 16.90 17.67 16.94 17.82
AB3 17.33 18.27 17.36 18.28 17.51 18.30 17.59 18.55
AB1 17.44 18.89 17.97 18.89 18.14 18.96 18.21 19.17
RD20ES AB2 18.60 19.60 18.62 19.60 18.80 19.68 18.87 19.89
AB3 19.31 20.37 19.33 20.37 19.52 20.45 19.60 20.66
AB1 20.01 20.98 20.04 20.99 20.23 21.08
RD22ESAB2 20.53 21.55 20.62 21.56 20.76 21.65
AB3 20.98 21.99 21.03 22.00 21.22 22.09
AB4 21.43 22.50 21.47 22.61 21.68 22.61
12
Table 5 RD [ ] ES Zener Voltage Subdivided (3/3)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 0.5 mA IZ = 1 mA IZ = 5 mA IZ = 10 mA IZ = 20 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
AB1 22.00 23.00 22.05 23.02 22.26 23.12
RD24ESAB2 22.48 23.61 22.52 23.63 22.75 23.73
AB3 22.52 24.14 23.01 24.16 23.29 24.27
AB4 23.52 24.68 24.15 24.70 23.81 24.81
AB1 23.94 25.38 23.98 25.40 24.26 25.52
RD27ESAB2 24.63 26.11 24.67 26.12 24.97 26.26
AB3 25.29 26.79 25.32 26.80 25.63 26.95
AB4 25.93 27.47 25.96 27.48 26.29 27.64
AB1 26.62 28.17 26.65 28.18 26.99 28.39
RD30ESAB2 27.32 28.95 27.35 28.96 27.70 29.13
AB3 27.95 29.64 27.99 29.65 28.36 29.82
AB4 28.60 30.33 28.64 30.33 29.02 30.51
AB1 29.24 31.03 29.28 31.03 29.68 31.22
RD33ESAB2 29.86 31.67 29.90 31.69 30.32 31.88
AB3 30.42 32.27 30.46 32.30 30.90 32.50
AB4 30.99 32.87 31.04 32.89 31.49 33.11
AB1 31.62 33.52 31.67 33.56 32.14 33.79
RD36ESAB2 32.22 34.41 32.29 34.45 32.79 34.49
AB3 32.81 34.82 32.86 34.87 33.40 35.13
AB4 33.36 35.45 33.44 35.51 34.01 35.77
AB1 34.03 36.13 34.07 36.20 34.68 36.47
RD39ESAB2 34.66 36.81 34.71 36.91 35.36 37.19
AB3 35.25 37.44 35.32 37.55 36.00 37.85
AB4 35.85 38.11 35.92 38.21 36.63 38.52
13
Table 6 RD [ ] E Zener Voltage Subdivided (1/4)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 1 mA IZ = 5 mA IZ = 10 mA IZ = 20 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
RD2.0EB1 1.24 1.38 1.55 1.73 1.69 1.89 1.88 2.10
B2 1.32 1.45 1.66 1.82 1.80 1.98 2.02 2.20
RD2.2EB1 1.38 1.51 1.73 1.89 1.89 2.08 2.12 2.30
B2 1.45 1.59 1.83 2.00 2.00 2.18 2.22 2.41
RD2.4EB1 1.52 1.64 1.91 2.08 2.10 2.28 2.33 2.52
B2 1.59 1.72 1.99 2.17 2.18 2.38 2.43 2.63
RD2.7EB1 1.65 1.83 2.08 2.27 2.28 2.50 2.54 2.75
B2 1.76 1.94 2.21 2.42 2.43 2.65 2.69 2.91
RD3.0EB1 1.87 2.08 2.34 2.57 2.58 2.80 2.85 3.07
B2 2.00 2.18 2.49 2.70 2.72 2.94 3.01 3.22
RD3.3EB1 2.12 2.31 2.67 2.84 2.87 3.09 3.16 3.38
B2 2.26 2.42 2.78 2.98 3.03 3.24 3.32 3.53
RD3.6EB1 2.35 2.54 2.90 3.13 3.17 3.40 3.47 3.68
B2 2.47 2.69 3.05 3.28 3.32 3.55 3.62 3.83
RD3.9EB1 2.64 2.86 3.22 3.46 3.48 3.72 3.77 3.98
B2 2.75 3.01 3.36 3.62 3.63 3.88 3.92 4.14
B1 2.91 3.15 3.52 3.77 3.78 4.03 4.05 4.26
RD4.3E B2 3.07 3.34 3.68 3.95 3.95 4.19 4.20 4.40
B3 3.27 3.54 3.87 4.13 4.11 4.35 4.34 4.53
B1 3.38 3.69 4.03 4.27 4.26 4.48 4.47 4.65
RD4.7E B2 3.51 3.84 4.15 4.40 4.38 4.60 4.59 4.77
B3 3.65 4.14 4.29 4.65 4.56 4.84 4.71 4.91
B1 3.85 4.31 4.49 4.81 4.70 4.94 4.85 5.03
RD5.1E B2 4.16 4.74 4.69 5.10 4.85 5.15 4.97 5.18
B3 4.43 4.96 4.90 5.32 5.02 5.34 5.12 5.35
B1 4.77 5.16 5.15 5.43 5.23 5.49 5.29 5.52
RD5.6E B2 5.19 5.60 5.38 5.65 5.42 5.69 5.46 5.70
B3 5.43 5.77 5.58 5.85 5.61 5.88 5.64 5.88
B1 5.70 6.00 5.75 6.04 5.77 6.05 5.81 6.06
RD6.2E B2 5.90 6.22 5.94 6.23 5.96 6.24 5.99 6.24
B3 6.06 6.37 6.09 6.38 6.12 6.39 6.16 6.40
B1 6.20 6.53 6.20 6.55 6.28 6.57 6.32 6.59
RD6.8E B2 6.39 6.72 6.43 6.75 6.47 6.77 6.52 6.79
B3 6.56 6.90 6.63 6.91 6.65 6.95 6.70 6.97
B1 6.76 7.11 6.80 7.14 6.84 7.16 6.88 7.19
RD7.5E B2 6.99 7.33 7.03 7.35 7.07 7.38 7.11 7.41
B3 7.21 7.56 7.25 7.59 7.29 7.61 7.33 7.64
14
Table 6 RD [ ] E Zener Voltage Subdivided (2/4)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 1 mA IZ = 5 mA IZ = 10 mA IZ = 20 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
B1 7.40 7.79 7.45 7.82 7.50 7.85 7.56 7.90
RD8.2E B2 7.66 8.04 7.70 8.07 7.76 8.10 7.82 8.15
B3 7.91 8.30 7.96 8.33 8.01 8.36 8.07 8.41
B1 8.24 8.64 8.27 8.67 8.30 8.67 8.33 8.70
RD9.1E B2 8.51 8.95 8.53 8.96 8.56 8.96 8.61 8.99
B3 8.79 9.25 8.82 9.26 8.85 9.26 8.89 9.29
B1 9.05 9.51 9.08 9.52 9.11 9.54 9.19 9.59
RD10E B2 9.35 9.82 9.38 9.83 9.41 9.85 9.48 9.90
B3 9.70 10.23 9.72 10.24 9.75 10.26 9.82 10.30
B1 9.99 10.59 10.04 10.63 10.18 10.60
RD11E B2 10.41 10.88 10.46 10.92 10.50 10.94
B3 10.73 11.20 10.78 11.22 10.82 11.26
B1 11.03 11.55 11.08 11.59 11.13 11.63
RD12E B2 11.40 11.84 11.45 11.88 11.50 11.92
B3 11.70 12.22 11.75 12.26 11.80 12.30
B1 12.07 12.62 12.12 12.66 12.18 12.71
RD13E B2 12.48 13.77 12.53 13.11 12.59 13.16
B3 12.92 13.53 12.97 13.57 13.03 13.62
B1 13.34 13.99 13.40 14.03 13.48 14.09
RD15E B2 13.81 14.46 13.87 14.50 13.95 14.56
B3 14.28 14.92 14.34 14.96 14.42 15.02
B1 14.70 15.38 14.77 15.42 14.87 15.50
RD16E B2 15.16 15.84 15.23 15.88 15.33 15.96
B3 15.61 16.38 15.68 16.42 15.79 16.50
B1 16.10 16.88 16.21 16.97 16.34 17.06
RD18E B2 16.66 17.49 16.77 17.58 16.90 17.67
B3 17.27 18.12 17.39 18.31 17.51 18.30
B1 17.83 18.69 17.95 18.81 18.11 18.92
RD20EB2 18.46 19.34 18.58 19.46 18.73 19.57
B3 19.14 20.02 19.26 20.14 19.38 20.22
B4 19.63 20.52 19.79 20.64 19.88 20.72
B1 20.10 20.95 20.23 21.08
RD22EB2 20.63 21.53 20.76 21.65
B3 21.09 21.97 21.22 22.09
B4 21.55 22.49 21.68 22.61
15
Table 6 RD [ ] E Zener Voltage Subdivided (3/4)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 1 mA IZ = 5 mA IZ = 10 mA IZ = 20 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
B1 22.08 22.98 22.26 23.13
RD24EB2 22.57 23.59 22.75 23.73
B3 23.11 24.13 23.29 24.27
B4 23.63 24.67 23.81 24.81
B1 24.02 25.32 24.26 25.52
RD27EB2 24.73 26.06 24.97 26.26
B3 25.39 26.75 25.63 26.95
B4 26.05 27.44 26.29 27.64
B1 26.71 28.15 26.99 28.39
RD30EB2 27.42 28.89 27.70 29.13
B3 28.08 29.58 28.36 29.82
B4 28.74 30.27 29.02 30.51
B1 29.36 30.88 29.68 31.22
RD33EB2 30.00 31.61 30.32 31.88
B3 30.58 32.23 30.90 32.50
B4 30.88 32.84 31.49 33.11
B1 31.78 33.48 32.14 33.79
RD36EB2 32.43 34.18 32.79 34.49
B3 33.04 34.82 33.40 35.13
B4 33.65 35.46 34.01 35.77
B1 34.28 36.13 34.68 36.47
B2 34.96 36.85 35.36 37.19
B3 35.60 37.51 36.00 37.85
RD39E B4 36.23 38.18 36.63 38.52
B5 37.49 38.95 37.88 39.29
B6 37.67 39.77 38.14 40.11
B7 38.54 40.46 38.94 40.80
16
Table 6 RD [ ] E Zener Voltage Subdivided (4/4)
Types Suffix IZ = 0.5 mA IZ = 1 mA IZ = 2 mA IZ = 5 mA
RD43E B 39.02 44.46 39.15 44.51 39.38 44.64 40 45
RD47E B 42.83 48.35 42.98 48.41 43.26 48.57 44 49
RD51E B 46.60 53.18 46.77 53.26 47.11 53.45 48 54
RD56E B 51.24 58.93 51.48 59.03 51.87 59.28 53 60
RD62E B 57.06 65.53 57.44 65.69 58 66 58.74 67.90
RD68E B 62.96 71.48 63.36 71.66 64 72 64.83 74.13
RD75E B 68.85 78.41 69.28 78.60 70 79 70.92 81.45
RD82E B 75.72 86.33 76.17 86.53 77 87 78.05 89.85
RD91E B 83.53 95.22 84.02 95.43 85 96 86.24 99.40
RD100E B 92.28 105.08 92.83 105.30 94 106 95.47 110.10
RD110E B 103.21 115.56 104 116 104.61 118.25 106.33 124.4
RD120E B 112.94 125.40 114 126 114.83 129.08 117.15 136.13
17
Table 7 R [ ] F Zener Voltage Subdivided (1/3)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 1 mA IZ = 10 mA IZ = 20 mA IZ = 40 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
RD2.0FB1 1.11 1.39 1.58 1.84 1.88 2.12
B2 1.20 1.48 1.69 1.95 2.01 2.25
RD2.2FB1 1.27 1.54 1.76 2.03 2.11 2.34
B2 1.33 1.62 1.84 2.13 2.21 2.45
RD2.4FB1 1.39 1.69 1.93 2.22 2.31 2.55
B2 1.46 1.76 1.98 2.31 2.41 2.65
RD2.7FB1 1.54 1.85 2.15 2.43 2.52 2.78
B2 1.65 1.97 2.27 2.57 2.68 2.93
RD3.0FB1 1.75 2.08 2.42 2.71 2.83 3.07
B2 1.86 2.19 2.55 2.85 2.97 3.22
RD3.3FB1 1.97 2.31 2.71 3.00 3.13 3.37
B2 2.10 2.43 2.85 3.14 3.27 3.51
RD3.6FB1 2.23 2.58 3.01 3.32 3.43 3.68
B2 2.36 2.71 3.17 3.49 3.58 3.83
RD3.9FB1 2.50 2.87 3.34 3.68 3.73 4.00
B2 2.64 3.03 3.52 3.85 3.88 4.15
B1 2.79 3.18 3.69 4.01 4.03 4.28
RD4.3F B2 2.92 3.34 3.83 4.18 4.15 4.41
B3 3.05 3.50 3.99 4.34 4.28 4.55
B1 3.20 3.62 4.14 4.46 4.41 4.65
RD4.7F B2 3.34 3.83 4.29 4.61 4.53 4.78
B3 3.49 4.06 4.44 4.76 4.66 4.91
B1 3.65 4.30 4.60 4.93 4.79 5.05
RD5.1F B2 3.87 4.60 4.78 5.12 4.95 5.22
B3 4.00 4.86 4.96 5.30 5.10 5.38
B1 4.42 5.16 5.16 5.50 5.28 5.56
RD5.6F B2 4.76 5.46 5.37 5.71 5.46 5.75
B3 5.12 5.79 5.58 5.92 5.65 5.95
B1 5.32 6.05 5.71 6.11 5.76 6.14
RD6.2F B2 5.67 6.27 5.93 6.30 5.98 6.33
B3 5.95 6.47 6.12 6.49 6.17 6.52
B1 6.19 6.66 6.30 6.68 6.35 6.71
RD6.8F B2 6.44 6.85 6.50 6.87 6.55 6.90
B3 6.63 7.05 6.69 7.07 6.74 7.10
18
Table 7 R [ ] F Zener Voltage Subdivided (2/3)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 1 mA IZ = 10 mA IZ = 20 mA IZ = 40 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
B1 6.82 7.28 6.88 7.30 6.93 7.33
RD7.5F B2 7.06 7.49 7.11 7.52 7.17 7.55
B3 7.28 7.74 7.33 7.77 7.39 7.80
B1 7.46 7.97 7.52 8.00 7.58 8.03
RD8.2F B2 7.75 8.21 7.81 8.24 7.87 8.28
B3 7.99 8.47 8.05 8.50 8.12 8.54
B1 8.21 8.72 8.26 8.76 8.34 8.80
RD9.1F B2 8.50 9.00 8.56 9.03 8.64 9.08
B3 8.76 9.29 8.82 9.32 8.91 9.38
B1 9.01 9.57 9.06 9.61 9.16 9.67
RD10F B2 9.34 9.88 9.39 9.92 9.50 9.99
B3 9.66 10.29 9.72 10.33 9.83 10.40
B1 10.11 10.69 10.17 10.73 10.22 10.75
RD11F B2 10.43 11.02 10.48 11.06 10.54 11.09
B3 10.75 11.36 10.81 11.40 10.87 11.43
B1 11.07 11.69 11.13 11.74 11.19 11.77
RD12F B2 11.37 12.01 11.44 12.06 11.50 12.09
B3 11.67 12.33 11.73 12.38 11.80 12.41
B1 12.05 12.77 12.12 12.81 12.19 12.85
RD13F B2 12.48 13.21 12.56 13.26 12.63 13.30
B3 12.95 13.73 13.03 13.79 13.11 13.83
B1 13.39 14.18 13.47 14.23 13.55 14.28
RD15F B2 13.88 14.66 13.96 14.72 14.05 14.77
B3 14.34 15.14 14.43 15.21 14.52 15.26
B1 14.79 15.63 14.88 15.69 14.98 15.75
RD16F B2 15.25 16.10 15.34 16.17 15.44 16.23
B3 15.69 16.58 15.78 16.65 15.89 16.71
B1 16.16 17.13 16.26 17.20 16.37 17.27
RD18F B2 16.81 17.77 16.91 17.84 17.03 17.91
B3 17.41 18.40 17.52 18.47 17.64 18.55
B1 18.02 19.06 18.13 19.13 18.26 19.21
RD20F B2 18.78 19.75 18.80 19.83 18.93 19.91
B3 19.33 20.70 19.46 20.76 19.59 20.84
19
Table R [ ] F Zener Voltage Subdivided (3/3)
Zener Voltage VZ (V) Pulse 40 ms Values for reference
Types Suffix IZ = 1 mA IZ = 5 mA IZ = 10 mA
MIN. MAX. MIN. MAX. MIN. MAX.
B1 20.28 21.41 20.36 21.45 20.45 21.51
RD22F B2 20.92 22.07 21.00 22.12 21.10 22.18
B3 21.56 22.74 21.65 22.80 21.75 22.86
B1 22.23 23.47 22.33 23.53 22.44 23.59
RD24F B2 22.95 24.24 23.06 24.29 23.17 24.36
B3 23.67 25.01 23.78 25.07 23.90 25.14
B1 24.49 25.96 24.51 26.03 24.63 26.10
RD27F B2 25.45 26.98 25.57 27.04 25.70 27.12
B3 26.55 28.27 26.59 28.34 26.72 28.43
B1 27.14 28.92 27.29 29.00 27.43 29.09
RD30F B2 28.33 29.92 28.49 30.00 28.64 30.10
B3 29.24 31.07 29.41 31.16 29.57 31.26
B1 30.01 31.78 30.18 31.86 30.35 31.97
RD33F B2 31.13 32.86 31.31 32.95 31.49 33.06
B3 32.01 33.94 32.20 34.03 32.39 34.15
B1 32.85 34.72 33.04 34.82 33.24 34.94
RD36F B2 33.85 35.77 34.05 35.88 34.26 36.01
B3 34.76 36.76 34.97 36.87 35.19 37.01
B1 35.67 37.74 35.88 37.86 36.11 38.00
RD39F B2 36.68 38.78 36.90 38.89 37.14 39.04
B3 37.65 40.59 37.88 40.68 38.13 40.80
RD43F B 38.55 44.57 39.30 44.77 40.00 45.00
RD47F B 42.35 48.51 43.28 48.73 44.00 49.00
RD51F B 46.10 53.42 47.05 53.68 48.00 54.00
RD56F B 50.74 59.29 51.85 59.59 53.00 60.00
RD62F B 55.30 65.14 56.60 65.49 58.00 66.00
RD68F B 60.70 70.95 62.23 71.36 64.00 72.00
RD75F B 66.00 77.68 67.80 78.17 70.00 79.00
RD82F B 71.90 85.27 74.10 85.88 77.00 87.00
20
(ii) Temperature coefficient of Zener voltage
The temperature coefficient of the Zener voltage somewhat varies with the type of PN junction and junction
area. Fig. 10 and Table 8 give temperature coefficients of Zener voltages in RD [ ] JS, RD [ ] E, and RD
[ ] F Series.
1 2 10 20
–0.06
–0.04
–0.02
0
0.02
0.04
0.06
0.08
(a) RD [ ] JS
Zen
er V
olta
ge T
empe
ratu
re C
oeffi
cien
t γZ (
%/ ˚
C)
IZ = 5 mA
IZ = 1 mA
IZ = 0.1 mA
Zener Voltage VZ (V) *
21 10 20 100
–0.10
–0.05
0
0.05
0.10
(b) RD [ ] E
Zen
er V
olta
ge T
empe
ratu
re C
oeffi
cien
t γZ (
%/ ˚
C)
IZ = 5 mAIZ = 1 mA
IZ = 20 mA
IZ = 0.1 mA
Zener Voltage VZ (V) *
1 2 10 20 100
–0.10
–0.05
0
0.05
0.10
(c) RD [ ] F
Zen
er V
olta
ge T
empe
ratu
re C
oeffi
cien
t γZ (
%/ ˚
C)
IZ = 10 mAIZ = 20 mA
IZ = 0.1 mA
Zener Voltage VZ (V) *
IZ = 1 mA
Fig. 10 γZ-VZ Characteristics
(*) VZ: Refer to Table 4, 6 and 7.
21
Table 8 V Z Temperature Coefficients (TYP.)
RD [ ] E Series RD [ ] F Series RD [ ] JS Series
Temperature Temperature Temperature
Types Coefficients of VZ Types Coefficients of VZ Types Coefficients of VZ
γz TYP. (%/˚C) γz TYP. (%/˚C) γz TYP. (%/˚C)
RD2.0E –0.055 RD2.0F –0.080 RD4.7JS +0.007
RD2.2E –0.057 RD2.2F –0.080 RD5.1JS +0.018
RD2.4E –0.058 RD2.4F –0.078 RD5.6JS +0.028
RD2.7E –0.059 RD2.7F –0.076 RD6.2JS +0.036
RD3.0E –0.059 RD3.0F –0.072 RD6.8JS +0.043
RD3.3E –0.056 RD3.3F –0.068 RD7.5JS +0.048
RD3.6E –0.053 RD3.6F –0.064 RD8.2JS +0.053
RD3.9E –0.048 RD3.9F –0.058 RD9.1JS +0.057
RD4.3E –0.038 RD4.3F –0.049 RD10JS +0.061
RD4.7E –0.022 RD4.7F –0.035 RD11JS +0.064
RD5.1E +0.010 RD5.1F –0.009 RD12JS +0.067
RD5.6E +0.024 RD5.6F +0.011 RD13JS +0.070
RD6.2E +0.033 RD6.2F +0.032 RD15JS +0.073
RD6.8E +0.038 RD6.8F +0.042 RD16JS +0.076
RD7.5E +0.044 RD7.5F +0.051 RD18JS +0.079
RD8.2E +0.049 RD8.2F +0.057 RD20JS +0.081
RD9.1E +0.053 RD9.1F +0.062 RD22JS +0.082
RD10E +0.057 RD10F +0.067 RD24JS +0.084
RD11E +0.061 RD11F +0.071
RD12E +0.064 RD12F +0.074
RD13E +0.067 RD13F +0.077
RD15E +0.069 RD15F +0.079
RD16E +0.071 RD16F +0.081
RD18E +0.073 RD18F +0.083
RD20E +0.075 RD20F +0.085
RD22E +0.077 RD22F +0.086
RD24E +0.079 RD24F +0.087
RD27E +0.081 RD27F +0.089
RD30E +0.082 RD30F +0.090
RD33E +0.083 RD33F +0.091
RD36E +0.084 RD36F +0.092
RD39E +0.085 RD39F +0.093
RD43E +0.087 RD43F +0.094
RD47E +0.088 RD47F +0.094
RD51E +0.089 RD51F +0.095
RD56E +0.090 RD56F +0.096
RD62E +0.090 RD62F +0.097
RD68E +0.091 RD68F +0.098
RD75E +0.092 RD75F +0.098
RD82E +0.093 RD82F +0.099
RD91E +0.094
RD100E +0.095
RD110E +0.095
RD120E +0.096
Note: IZ: Refer to Table 4, 6 and 7.
22
(iii) Dynamic impedance
Figs. 11, 12, and 13 show dynamic impedances of RD [ ] JS, RD [ ] E, and RD [ ] F Series. In RD [ ]
JS Series, where the junction area is small, the dynamic impedances is lower in the low current range and
in RD [ ] F Series, where the junction area is large, the dynamic impedance is lower in the larger current
range.
1000
100
10
1
Dyn
amic
Impe
danc
e Z
Z (
Ω)
1 10010Zener Current IZ (mA)
(a)
TA = 25 ˚CTYP.
RD6.8JS
RD7.5JS
RD9.1JSRD5.6JS
RD4.7JS
1000
100
10
1D
ynam
ic Im
peda
nce
ZZ (
Ω)
1 10010Zener Current IZ (mA)
(b)
TA = 25 ˚CTYP.
RD18JS
RD10JS
RD22JS
RD15JSRD12JS
Fig. 11 RD [ ] JS Z Z-IZ Characteristics
1000
100
10
1
Dyn
amic
Impe
danc
e Z
Z (
Ω)
1 10010Zener Current IZ (mA)
(a)
RD2.2E
TA = 25 ˚CTYP.
0.5
RD2.4ERD2.7ERD3.0E
RD3.3E
RD3.6E
RD3.9E
RD4.3ERD4.7E
RD2.0E
RD5.1ERD5.6E
RD6.2E
RD6.8E
RD7.5E
1000
100
10
1
Dyn
amic
Impe
danc
e Z
Z (
Ω)
1 10010Zener Current IZ (mA)
(b)
TA = 25 ˚CTYP.
0.5
RD100E
RD51E
RD39E
RD36ERD33ERD30ERD27ERD24E
RD22ERD20ERD18E
RD16E
RD15ERD13E
RD11ERD10ERD9.1ERD8.2E
RD12E
Fig. 12 RD [ ] E Z Z-IZ Characteristics
23
1 10 1000.1
1
10
100
1000
Zener Current IZ (mA)
Dyn
amic
Impe
danc
e Z
Z (
Ω)
1 10 1000.1
1
10
100
1000
Zener Current IZ (mA)D
ynam
ic Im
peda
nce
ZZ (
Ω)
RD2.0F
TA = 25 ˚CTYP.
TA = 25 ˚CTYP.
RD82FRD56F
RD47F
RD20FRD15F
RD10F
RD4.3F
RD5.6FRD5.1F
RD6.8F
RD6.2F
RD7.5F
Fig. 13 RD [ ] F Z Z-IZ Characteristics
(iv) Reverse current (IR)
In Figs. 14, 15, and 16, Zener voltage vs Zener current (reverse current) characteristics in RD [ ] JS, RD
[ ] E, and RD [ ] F Series are shown. On Zener voltages below 5 to 6 V in RD [ ] JS Series, the VZ-IZ
characteristics are obviously sharp in comparison with those in RD [ ] E and RD [ ] F Series.
24
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
0 1 2 3 4 5 6 7 8 9Zener Voltage υZ (V)
(a)
RD4.7JS
RD5.1JS
RD5.6JS
RD6.2JS
RD6.8JS
RD7.5JS
RD8.2JS
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)0 7 8 9 10 11 12 13 14 15
Zener Voltage υZ (V)(b)
RD9.1JS RD10JS
RD11JS
RD12JSRD13JS
RD15JS
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
0 12 14 16 18 20 22 24 26 28Zener Voltage υZ (V)
(c)
RD16JS
RD18JS
RD20JS
RD22JS
RD24JS
Fig. 14 RD [ ] JS i Z-υZ Characteristics
25
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
0 1 2 3 4 5 6 7 8 9
Zener Voltage υZ (V)
(a)
RD4.7ERD4.3ERD3.9ERD3.6ERD3.3ERD3.0ERD2.7E
RD2.4ERD2.2ERD2.0E RD5.1E
RD5.6ERD6.2E
RD6.8ERD7.5E
RD8.2ERD9.1E
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
11 12 13 14 15 16 17 18 19 20
Zener Voltage υZ (V)
(c)
RD15E
RD16ERD18E
RD20E
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
0 7 8 9 10 11 12 13 14 15
Zener Voltage υZ (V)
(b)
RD10E RD11ERD12E
RD13E
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
µ
Zen
er C
urre
nt iZ
(A
)
018
Zener Voltage υZ (V)
(d)
RD27E RD30E
100 µ
20 22 24 26 28 30
RD22ERD24E
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
µ
Zen
er C
urre
nt iZ
(A
)
0 25
Zener Voltage υZ (V)
(e)
RD39E
100 µ
RD33E RD36E
30 35 40
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
µ
Zen
er C
urre
nt iZ
(A
)
0 30
Zener Voltage υZ (V)
(f)
100 µ
RD47E
60 90 120
RD43E
RD62E
RD56E
RD68ERD82E
RD120E
RD91E
RD110E
RD100ERD75E
Fig. 15 RD [ ] E i Z-υZ Characteristics
26
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
RD3.3F
RD3.0FRD2.7FRD2.4FRD2.2FRD2.0F
RD4.7FRD4.3F
RD3.9FRD3.6F
RD5.6FRD5.1F
RD6.2FRD6.8F
RD7.5F
RD8.2FRD9.1F
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
0 1 2 3 4 5 6 7 8 9Zener Voltage υZ (V)
(a)
0 7 8 9 10 11 12 13 14 15Zener Voltage υZ (V)
(b)
RD10F RD11F RD12F RD13F 100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
11 12 13 14 15 16 17 18 19 20Zener Voltage υZ (V)
(c)
RD15F RD16F RD18F RD20F
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
18 20 22 24 26 28Zener Voltage υZ (V)
(d)
30
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
0 25 30 35Zener Voltage υZ (V)
(e)
40
RD22F RD24F RD27F RD30F
100 m
10 m
1 m
10
1
100 n
10 n
1 n
µ
100
µ
µ
Zen
er C
urre
nt iZ
(A
)
0 30 50 70Zener Voltage υZ (V)
90
(f)
RD33F RD36F RD39F
RD82F
RD75F
RD68F
RD62FRD56F
RD51FRD47FRD43F
Fig. 16 RD [ ] F i Z-υZ Characteristics
27
(v) Noise
Noises occurring in semiconductor devices are generally divided into the thermal noise, flicker noise, and
shot noise.
The thermal noise occurs in all semiconductors and is generated by irregular motion of the carrier.
The flicker noise has a peculiar spectral distribution proportional to 1/fα and is known to be generated by
the surface effect in a semiconductor device. (α is nearly equals 1 in general and this noise is so called
“1/f noise”.)
The shot noise is independent of frequency in low and medium frequency ranges (white spectrum) and is
caused by the local flicker of the carrier density in a junction.
Types of noises in Zener diodes differ according to the current (current density) flowing thru them. Generally,
with Zener diodes, the noise decreases with increasing current density to a certain degree and with still higher
current density it goes into the thermal noise region and is increased as shown in Fig. 17. Noises of Zener
diodes can be considered as those of an equivalent circuit shown in Fig. 18 which indicates that the Noise
en is the function of the dynamic impedance.
As has been mentioned above, in RD [ ] JS Series, the low noise design is achieved by making the main
junction area very small, increasing the current density, and uniforming the junction, and by reducing dynamic
impedance by means of increasing impurity atom concentration.
Fig. 19 shows noise vs. Zener current characteristics of RD [ ] JS Series in comparison with those of RD
[ ] E Series.
Thrmal noise region
Shot noise region
Low noise region
Current Density
Noi
se
1 2 3 4 5 6 7 8 9 1010–6
10–5
10–4
10–3
RD15E
RD15JS
RD6.2E
RD6.2JSRD4.7JS
Noi
se V
olta
ge e
n (V
)
Zener Current IZ (mA)
In
ZZ
∆i en = ∆i·ZZ
en: Noise voltage∆i : Current fluctuationZZ: Dynamic impedance
Fig. 17 Noise-Current Density Fig. 18 Equivalent Circuit of Noise Fig. 19 RD [ ] JS Noise Characteristics
(vi) Mechanical strength
(a) Tensile strength
Figs. 20(a) and 20(b) show tensile rupture test data.
(b) Compressive strength
Figs. 21(a) and 21(b) show strength when pressure is applied in a direction perpendicular to the axial
direction of a device.
(vii) Overpower withstanding
Fig. 22 shows results of breaking tests with RD [ ] E when step power is applied for a time longer than 10
ms. Surge reverse power ratings for short time. 10 µs to 10 ms have already been explained. For RD [ ]
E, breaking is caused by power four times (l = 10 mm) and six times (l = 5 mm) the rating. This shows that
the ratings have sufficient margins.
28
5 10 15 20Weight (kg)
(a) RD[ ]E, RD[ ]JS, RD[ ]ES
99.9
99
95908070605040302010
5
1
···Glass body breaking···Lead breaking
30 s. Weight
Cum
mul
ativ
e F
ract
ion
Def
ectiv
e (%
)
0 10
99.9
99
95908070605040302010
5
1Cum
mul
ativ
e F
ract
ion
Def
ectiv
e (%
)
150.1
Pressure (kg)(b) RD[ ]F
···Glass body breaking···Lead breaking
30 s. WeightRD[ ]JS
RD[ ]ES
RD[ ]E
5
Fig. 20 Lead Tension Rupture Distribution (Example)
8 10 20 40
Pressure (kg)(a) RD[ ]E, RD[ ]JS, RD[ ]ES
99.9
99
959080706050403020
105
1
Cum
mul
ativ
e F
ract
ion
Def
ectiv
e (%
)
30
RD[ ]JSRD[ ]ES RD[ ]E
Pressure
Sample
Carbon hardsteel
30 40
99.9
99
959080706050403020105
1Cum
mul
ativ
e F
ract
ion
Def
ectiv
e (%
)
50
Sample
Carbon hardsteel
Pressure
0.1
Pressure (kg)(b) RD[ ]F
Fig. 21 Body Pressure Rupture Distribution (Example)
1.0 2.0
99
959080706050403020
105
1
Cum
mul
ativ
e F
ract
ion
Def
ectiv
e (%
)
3.0
0.1
PZ (W)
0.01
Test ConditionsTA = 25 ˚C∆IZ = 20 mA step(1 step 30 min.)
Attached to P.C.Board
S = 28 mm2 (One side)
3 min.
∆IZ
= 10 mm = 5 mm
Fig. 22 DC Reverse Power Rupture Distribution (RD [ ] E Example)
29
4. APPLICATIONTable 9 lists uses and current ranges of Zener diodes. RD [ ] E and RD [ ] F Series feature great surge power
and small size and light weight and they are suitable for constant-voltage, constant-current power sources, clipper,
limiter, slicer, fixed bias level shift, and surge absorption circuits. For low level (IZ = 1 to 100 µA) constant-voltage,
constant-current circuits, level shift circuits, and high impedance surge absorption circuits RD [ ] JS Series is optimum.
Your are, however, requested to consult us before designing circuits employing the diodes because sharpness of VZ-
IZ characteristics, dispersion of Zener voltages on low levels, and stability of voltages vary with Zener voltages.
Table 9 Application Zener Diodes
RD [ ] JS RD [ ] ES·RD [ ] E RD [ ] F
Application (*) (**) (*) (*) (*) (**)
Suitable Current Ranges Suitable Current Ranges Suitable Current Ranges
Constant voltage 10 µA to IZ MAX. 10 µA to IZ MAX. 100 µA to IZ MAX.
Constant Current 10 µA to IZ MAX. 10 µA to IZ MAX. 100 µA to IZ MAX.
Wavefor Clipper 0 to IZ MAX. 0 to IZ MAX. 0 to IZ MAX.
Limiter Slicer
Level Shift 0 to IZ MAX. 0 to IZ MAX. 0 to IZ MAX.
Fixed Bias Level Shift 10 µA to IZ MAX. 10 µA to IZ MAX. 100 µA to IZ MAX.
Surge Clipper 0 to ISM 0 to ISM 0 to ISM
Notes: (*) Very suitable
Suitable
Please consult up when using
Examples of Circuits
Constant voltage
Constant current
Clipper Limiter Slicer
Surge
E VZ
Surge clipper
Fixed bias level shift
Level shift
Clip
Although NEC has taken all possible stepsto ensure that the documentation suppliedto our customers is complete, bug freeand up-to-date, we readily accept thaterrors may occur. Despite all the care andprecautions we've taken, you mayencounter problems in the documentation.Please complete this form wheneveryou'd like to report errors or suggestimprovements to us.
Hong Kong, Philippines, OceaniaNEC Electronics Hong Kong Ltd.Fax: +852-2886-9022/9044
KoreaNEC Electronics Hong Kong Ltd.Seoul BranchFax: 02-551-0451
TaiwanNEC Electronics Taiwan Ltd.Fax: 02-719-5951
Address
North AmericaNEC Electronics Inc.Corporate Communications Dept.Fax: 1-800-729-9288
EuropeNEC Electronics (Europe) GmbHTechnical Documentation Dept.Fax: +49-211-6503-274
South AmericaNEC do Brasil S.A.Fax: +55-11-889-1689
Asian Nations except PhilippinesNEC Electronics Singapore Pte. Ltd.Fax: +65-250-3583
JapanNEC CorporationSemiconductor Solution Engineering DivisionTechnical Information Support Dept.Fax: 044-548-7900
I would like to report the following error/make the following suggestion:
Document title:
Document number: Page number:
Thank you for your kind support.
If possible, please fax the referenced page or drawing.
Excellent Good Acceptable PoorDocument Rating
Clarity
Technical Accuracy
Organization
CS 95.12
Name
Company
From:
Tel. FAX
Facsimile Message
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system MEI-1201
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual IEI-1207
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X-10679E
Surface mount discrete devices [DATA BOOK] TF-1006
No part of this document may be copied or reproduced in any form or by any means without the prior writtenconsent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in thisdocument.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectualproperty rights of third parties by or arising from use of a device described herein or any other liability arisingfrom use of such device. No license, either express, implied or otherwise, is granted under any patents,copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons orproperty arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safetymeasures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of eachdevice before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade,they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.
M4 94.11