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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected]. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
Transcript of Z ¡ë0ðýr1 $úô / = C qºþ@fqÏQø ì ½ & 0â'.& ± · Îq Ò( @ÚÕ2
To learn more about ON Semiconductor, please visit our website at www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected].
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2014
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©2012 Fairchild Semiconductor CorporationFDD390N15ALZ Rev. C4
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FDD390N15ALZ N-Channel PowerTrench® MOSFET150 V, 26 A, 42 m
Features• RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A
• RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A
• Fast Switching Speed
• Low Gate Charge, QG = 17.6 nC (Typ.)
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon-ductor’s advanced PowerTrench® process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Consumer Applicances
• LED TV
• Synchronous Rectification
• Uninterruptible Power Supplies
• Micro Solar Inverter
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDD390N15ALZ Unit
VDSS Drain to Source Voltage 150 V
VGSS Gate to Source Voltage ±20 V
ID Drain Current- Continuous (TC = 25oC) 26
A- Continuous (TC = 100oC) 17
IDM Drain Current - Pulsed (Note 1) 104 A
EAS Single Pulsed Avalanche Energy (Note 2) 96 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 13 V/ns
PD Power Dissipation(TC = 25oC) 63 W
- Derate Above 25oC 0.5 W/oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FDD390N15ALZ Unit
RJC Thermal Resistance, Junction to Case, Max. 2.0 oC/WRJA Thermal Resistance, Junction to Ambient, Max. 87
D-PAKG
S
D
G
D
S
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Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDD390N15ALZ FDD390N15ALZ DPAK Tape and Reel 330 mm 16 mm 2500 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V 150 - - V
BVDSS / TJ
Breakdown Voltage Temperature Coefficient
ID = 250 A, Referenced to 25oC - 0.15 - V/oC
IDSS Zero Gate Voltage Drain CurrentVDS = 120 V, VGS = 0 V - - 1
AVDS = 120 V, TC = 125oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 A
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 A 1.4 - 2.8 V
RDS(on) Static Drain to Source On ResistanceVGS = 10 V, ID = 26 A - 33.4 42 mVGS = 4.5 V, ID = 20 A - 42.2 64 m
gFS Forward Transconductance VDS = 10 V, ID = 26 A - 50 - S
Ciss Input CapacitanceVDS = 75 V, VGS = 0 V,f = 1 MHz
- 1323 1760 pF
Coss Output Capacitance - 93 120 pF
Crss Reverse Transfer Capacitance - 4 6 pF
Coss(er) Energy Related Output Capacitance VDS = 75 V, VGS = 0 V - 165 - pF
Qg(tot) Total Gate Charge at 10V VGS = 10 V VDS = 75 V,ID = 26 A
(Note 4)
- 17.6 39 nC
Qg(tot) Total Gate Charge at 5V VGS = 4.5 V - 8.1 10.5 nC
Qgs Gate to Source Gate Charge
- 4.7 - nC
Qgd Gate to Drain “Miller” Charge - 2.3 - nC
ESR Equivalent Series Resistance (G-S) f = 1 MHz - 1.48 -
td(on) Turn-On Delay TimeVDD = 75 V, ID = 26 A,VGS = 10 V, RG = 4. 7 (Note 4)
- 12.8 35.6 ns
tr Turn-On Rise Time - 9.3 28.6 ns
td(off) Turn-Off Delay Time - 26.9 63.8 ns
tf Turn-Off Fall Time - 3.2 16.4 ns
IS Maximum Continuous Drain to Source Diode Forward Current - - 26 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 104 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 26 A - - 1.25 V
trr Reverse Recovery Time VGS = 0 V, ISD = 26 A,dIF/dt = 100 A/s
- 70 - ns
Qrr Reverse Recovery Charge - 169 - nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 6.75 A, starting TJ = 25C.
3. ISD 26 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
©2012 Fairchild Semiconductor CorporationFDD390N15ALZ Rev. C4
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 100.050.1
1
10
100
1000
*Notes: 1. 250s Pulse Test
2. TC = 25oC
I D, D
rain
Cu
rren
t[A
]
VDS, Drain-Source Voltage[V]
VGS = 10.0V
5.5V 5.0V 4.5V 4.0V 3.5V 3.0V
1 2 3 4 5 61
10
100
-55oC
150oC
*Notes: 1. VDS = 10V
2. 250s Pulse Test
25oC
I D, D
rain
Cu
rren
t[A
]
VGS, Gate-Source Voltage[V]
0.2 0.4 0.6 0.8 1.0 1.2 1.41
10
100
200
*Notes:1. VGS = 0V
2. 250s Pulse Test
150oC
I S,
Rev
erse
Dra
in C
urr
ent
[A]
VSD, Body Diode Forward Voltage [V]
25oC
0 20 40 60 80 10020
40
60
80
100
*Note: TC = 25oC
VGS = 10V
VGS = 4.5V
RD
S(O
N) [
m],
Dra
in-S
ou
rce
On
-Re
sist
anc
e
ID, Drain Current [A]
0.1 1 10 100 2002
10
100
1000
2000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + CgdCrss = Cgd
*Note: 1. VGS = 0V
2. f = 1MHz
Crss
Ca
pac
ita
nc
es
[p
F]
VDS, Drain-Source Voltage [V]0 4 8 12 16 20
0
2
4
6
8
10
*Note: ID = 26A
VDS = 30VVDS = 75VVDS = 120V
VG
S, G
ate-
So
urc
e V
olt
age
[V]
Qg, Total Gate Charge [nC]
©2012 Fairchild Semiconductor CorporationFDD390N15ALZ Rev. C4
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive Switching Capability
-80 -40 0 40 80 120 1600.90
0.95
1.00
1.05
1.10
*Notes: 1. VGS = 0V
2. ID = 250A
BV
DS
S, [
No
rmal
ize
d]
Dra
in-S
ou
rce
Bre
akd
ow
n V
olt
age
TJ, Junction Temperature [oC]-80 -40 0 40 80 120 160
0.4
0.8
1.2
1.6
2.0
2.4
2.6
*Notes: 1. VGS = 10V
2. ID = 26A
RD
S(o
n),
[No
rma
lize
d]
Dra
in-S
ou
rce
On
-Re
sis
tan
ce
TJ, Junction Temperature [oC]
1 10 100 2000.01
0.1
1
10
100200
100s
1ms
10ms
100ms
I D, D
rain
Cu
rren
t [A
]
VDS, Drain-Source Voltage [V]
Operation in This Area is Limited by R DS(on)
SINGLE PULSE
TC = 25oC
TJ = 150oC
RJC = 2.0oC/W
DC
25 50 75 100 125 1500
5
10
15
20
25
30
VGS = 4.5V
RJC = 2.0oC/W
VGS = 10V
I D, D
rain
Cu
rre
nt
[A]
TC, Case Temperature [oC]
0 30 60 90 120 1500.0
0.2
0.4
0.6
0.8
1.0
1.2
EO
SS, [J
]
VDS
, Drain to Source Voltage [V]0.01 0.1 1 10 1001
10
15
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I AS, A
VA
LA
NC
HE
CU
RR
EN
T (
A)
©2012 Fairchild Semiconductor CorporationFDD390N15ALZ Rev. C4
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Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-10.01
0.1
1
3
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZJC(t) = 2.0oC/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.5
Single pulse
Th
erm
al R
esp
on
se
[ZJ
C]
Rectangular Pulse Duration [sec]
t1
PDM
t2
ZJ
C(t
), T
her
mal
Res
po
nse
[oC
/W]
t1, Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor CorporationFDD390N15ALZ Rev. C4
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Figure 14. Gate Charge Test Circuit & Waveform
Figure 15. Resistive Switching Test Circuit & Waveforms
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VGS
IG = const.
©2012 Fairchild Semiconductor CorporationFDD390N15ALZ Rev. C4
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Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LLI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------D =Gate Pulse Width
Gate Pulse Period--------------------------
©2012 Fairchild Semiconductor CorporationFDD390N15ALZ Rev. C4
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Mechanical Dimensions
Figure 18. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
©2012 Fairchild Semiconductor CorporationFDD390N15ALZ Rev. C4
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TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™FPS™
F-PFS™FRFET®
Global Power ResourceSM
GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®
OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™
Sync-Lock™®*
TinyBoost®
TinyBuck®
TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
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Rev. I66
tm
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.
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