XIS Calibration at Osaka K. Hayashida, K. Torii, M. Namiki, T. Shiroshoji, M. Shoji, S. Kastuda, H....
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Transcript of XIS Calibration at Osaka K. Hayashida, K. Torii, M. Namiki, T. Shiroshoji, M. Shoji, S. Kastuda, H....
![Page 1: XIS Calibration at Osaka K. Hayashida, K. Torii, M. Namiki, T. Shiroshoji, M. Shoji, S. Kastuda, H. Tsunemi (Osaka University) T. Kohmura (Kougakuin University)](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649f575503460f94c7bb16/html5/thumbnails/1.jpg)
XIS Calibration at OsakaXIS Calibration at Osaka
K. Hayashida, K. Torii, M. Namiki, K. Hayashida, K. Torii, M. Namiki, T. Shiroshoji, M. Shoji, S. Kastuda, T. Shiroshoji, M. Shoji, S. Kastuda,
H. Tsunemi H. Tsunemi
(Osaka University) (Osaka University)
T. Kohmura (Kougakuin University)T. Kohmura (Kougakuin University)
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Calibration Item at Osaka Calibration Item at Osaka Ex<2.2keVEx<2.2keV
Quantumn Efficiency as a function of Quantumn Efficiency as a function of energyenergyXANES at O-K, Si-KXANES at O-K, Si-K
Ex-PH relation (gain)Ex-PH relation (gain)Ex-FWHM relation (energy resolution)Ex-FWHM relation (energy resolution)Response Profile to Single Energy IncResponse Profile to Single Energy Inc
idence idence
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Quantumn Efficiency MeasurementQuantumn Efficiency Measurement Relative Efficiencies of FM-S0,S1,S2,S3, and XIRelative Efficiencies of FM-S0,S1,S2,S3, and XI
S-EU are measured by irradiating X-rays from thS-EU are measured by irradiating X-rays from the spectrometer to whole the CCD area. e spectrometer to whole the CCD area. Generator beam current is always monitoredGenerator beam current is always monitored Si Photodiode is sometimes used to measure the 0Si Photodiode is sometimes used to measure the 0thth o o
rder light.rder light.
XIS-EU was cross-calibrated to a Gas PC on 20XIS-EU was cross-calibrated to a Gas PC on 2003Dec. XIS-FM are not installed in the chamber 03Dec. XIS-FM are not installed in the chamber with the Gas PC simultaneously.with the Gas PC simultaneously.
The gas PC was calibrated in 2000, and calibratThe gas PC was calibrated in 2000, and calibrated again through the slant incident method in 20ed again through the slant incident method in 2004 January. 04 January.
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Detector Chamber
Manson Soft X-ray Generator
Hetrick Spectrometer
Calibration Facility in Osaka Clean Calibration Facility in Osaka Clean Room Room
![Page 5: XIS Calibration at Osaka K. Hayashida, K. Torii, M. Namiki, T. Shiroshoji, M. Shoji, S. Kastuda, H. Tsunemi (Osaka University) T. Kohmura (Kougakuin University)](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649f575503460f94c7bb16/html5/thumbnails/5.jpg)
XIS measurement without slitXIS measurement without slitNo Gas PC inside the chamberNo Gas PC inside the chamber
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X-rays to whole the CCD areaX-rays to whole the CCD area
Dispersion Direction
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Slant Incidence MethodSlant Incidence Method
No need to use other reference counters. / One way to make a reference counter.
In the simplest case, in which all the X-rays stop in the detection layer
d)exp()0( 0 II
)cos/dexp()( 0 IIX-rays
Dead Lasyer
Detection Layer
θ
d
))(/)0(ln(cos1
cos1d
II
Dead layer thickness is
Even if detection layer thickness is finite, we can measure the dead layer thickness by using the ratio of I(0)/I() of various energies.
Hayashida et al., 2003, SPIE4851
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X-rays
Slant Incidence Method: Experiment with HPK FI CCD camera
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0.4keV ~1keV
1keV ~ 2keV
O-Kα W-Mα
I(0)
I(45)
I(0)
I(45)
Hayashida et al., 2003,SPIE4851
HPK FI-CCDHPK FI-CCD
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Energy [keV]
I(45
)/I(
0)
Ratio Ratio I(45I(45°°)/I(0)/I(0°°))
SiO2(SiO2(m)m) Si(Si(m)m) Depletion Depletion Layer (Layer (m)m)
MeasuredMeasured 1.731.73±0.05±0.05 0.520.52±0.06±0.06 8.298.29±0.39±0.39
DesignDesign ~2~2 ~0.4~0.4
*) HPK FI CCD used in this experimentwas old model.
Hayashida et al., 2003,SPIE4851
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CCD raw frame dataCCD raw frame data
Experiment with HPK BI-CCDExperiment with HPK BI-CCD
Energy Low⇔High
O Kα
O Kα Fe 55
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0°8mm
0°0mm
30°8mm
30°0mm 45°0mm
45°8mm
O-K1st order
C-K
O-K 2nd order
BI-CCD
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X-raysX-rays
Slant Incident Method: Application Slant Incident Method: Application to Gas PCto Gas PC
We determined to use the Gas PC as the reference counter
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Cou
nts
PH (ch)
0° 30° 45°
Gas PC Spectra for Different Gas PC Spectra for Different Incident AngleIncident Angle
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Window (C3H6)
H2O
CC33HH66 [ [m]m] 0.974±0.0760.974±0.076
HH22O [O [m]m] 0.318±0.0600.318±0.060
Dead layer [Dead layer [m]m] 70.9±5.770.9±5.7
Gas Detection Layer
Gas dead layer beneath the window is introduced to fit the data.
Gas Dead Layer
Xray
Simple Model cannot reproduce the Simple Model cannot reproduce the data points of the Ratio data points of the Ratio
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0.01
0.1
1
0.2 0.4 0.6 0.8 1
モデル:斜入射較正法モデル:窓の透過率測定
Energy(keV)
Eff
icie
ncy
0.01
0.1
1
0.2 0.4 0.6 0.8 1
モデル:斜入射較正法モデル:窓の透過率測定
Energy(keV)
Eff
icie
ncy
0.01
0.1
1
0.2 0.4 0.6 0.8 1
モデル:斜入射較正法モデル:窓の透過率測定
Energy(keV)
Eff
icie
ncy
The transmission of the PC window was also measured in 2000 by on/off method.
Two independent methods agree well above 0.6keV
Gas dead layer is only measurable with the slant incident method.
Model by Slant Incident
Model by Window Tranmission
Detection Efficiency of PCDetection Efficiency of PC
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XIS-EU and Gas PC cross XIS-EU and Gas PC cross calibration using slit calibration using slit
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X-rays through Slit ( ~1mm)X-rays through Slit ( ~1mm)
Dispersion Direction
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PC (0.525keV) XIS-EU (0.525keV)
PC Spectra and CCD Spectra PC Spectra and CCD Spectra
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0
0.1
1
0.2 0.4 0.6 0.8 1Energy(keV)
データ点モデル
Eff
icie
ncy
0
0.1
1
0.2 0.4 0.6 0.8 1Energy(keV)
データ点モデル
Eff
icie
ncy
0
0.1
1
0.2 0.4 0.6 0.8 1Energy(keV)
データ点モデルデータ点モデル
Eff
icie
ncy
SiOSiO22 [ [m]m] 0.57±0.050.57±0.05
Si [Si [m]m] 0.30±0.030.30±0.03
BPSG of EU ~200nm
cf ~70nm for FM
QE of XIS-EUQE of XIS-EU
New Structure model is employed.Depletion Layer 65m is assumed.
cf Mark-san reports SiO2~0.35-0.39mSi ~0.25-0.31m
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ScheduleSchedule XIS-EU and PC cross calXIS-EU and PC cross cal XIS-EUXIS-EU XIS-FMS2 (Noise Problem)XIS-FMS2 (Noise Problem) PC slant incidence methodPC slant incidence method XIS-FMS3XIS-FMS3 XIS-FMS2 againXIS-FMS2 again XIS-EUXIS-EU XIS-FMS0 (Door Open Problem)XIS-FMS0 (Door Open Problem) XIS-FMS1 XIS-FMS1 XIS-FMS0 (TCE card problem)XIS-FMS0 (TCE card problem) TCE card replacementTCE card replacement XIS-FMS0XIS-FMS0 XIS-FMS1XIS-FMS1 XIS-EUXIS-EU Grating SA->SX for Si-edge XANESGrating SA->SX for Si-edge XANES XIS-EUXIS-EU (SX) (SX) XIS-FMS0 (SX)? XIS-FMS0 (SX)?