X-Ray Diffraction Techniques for Thin Films

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    Rigakuigaku Corporationorporation pplication Laboratorypplication Laboratory

    Takayuki Konyaakayuki Konya

    X-ray diffraction techniques

    for thin films

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    Todays contents (PM)

    Introduction

    X-ray diffraction method

    Out-of-Plane

    In-Plane

    Pole figure

    Reciprocal space mapping

    High resolution rocking curve

    X-ray reflectivity

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    spread of

    reciprocal lattice points

    Position and coordinate

    of reciprocal lattice points

    Shape of a reciprocal latticedistribution

    crystal perfection

    defects

    mosaicity

    lattice constant

    crystal orientation

    lattice distortion

    degree of preferred

    orientation

    What XRD reveals

    K

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    Structure parameters

    Order Analysis Method

    Thickness1~10

    3nm

    Precision :~several %Xray Reflectivity

    Density H2O~Heavy Metals Xray Reflectivity

    Roughness 0.2~several nm Xray Reflectivity

    Phase ID -In-Plane XRD

    Out-of-Plane XRD etc

    Crystal System -In-Plane XRD

    Out-of-Plane XRD etc

    Lattice

    Constant

    ~several nm

    Precision : 0.05~0.00005nm

    In-Plane XRD

    Out-of-Plane XRD etc

    Crystal qualityPoly~Single, Perfect

    Crystals

    In-Plane XRD

    Out-of-Plane XRD etc

    Preferred

    Orientation

    Random~Preferred Orientation

    ~Single CrystalPole Figure ect

    Orientation

    Relation

    Relation between

    Film & Substrate

    Rocking Curve

    Reciprocal Space Map etc

    Structure Parameter

    Layer

    Structure

    Crystal

    Structure

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    Todays contents (PM) Introduction

    X-ray diffraction method

    Out-of-Plane

    In-Plane

    Pole figure

    Reciprocal space mapping

    High resolution rocking curve

    X-ray reflectivity

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    Todays contents (PM)

    Introduction

    X-ray diffraction method

    Out-of-Plane

    In-Plane Pole figure

    Reciprocal space mapping

    High resolution rocking curve

    X-ray reflectivity

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    Difference between Scan Modes

    The orientation of observed crystal plane

    depends on scanning mode.

    Observed plane is..parallel to the surface

    In-Plane scan

    perpendicular

    to the surface

    Film scan

    tilting

    (changing during a scan)

    Out-of-Plane scan

    Observed plane is..

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    What is In-Plane XRD?

    Diffraction angle 2B

    Incident x-ray Reflected x-ray

    Diffracted x-ray

    The detector moves parallel to

    the surface.

    Observing planes are

    perpendicular to the surface.

    Grazing incidence

    (fixed angle)

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    Outward of In-Plane Attachment Scanning motion is completely

    perpendicular to /2 scan.

    /2 scan

    In-Plane measurement

    (2/ scan)

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    In-plane effect

    1400

    1200

    1000

    800

    600

    400

    200

    0

    Intensity(cps)

    9080706050403020

    2/ (degree)

    Out of Plane111

    220 113 004 331 224

    100

    80

    60

    40

    20

    0

    Intensity(cps)

    9080706050403020

    2/ (degree)

    In Plane

    111

    022

    311400133

    422

    111

    220

    poly-Si

    Glass

    In-PlaneInIn--PlanePlane Out-of-planeOutOut--ofof--planeplane

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    10

    100

    1000

    extinctiondistance(nm)

    1.00.80.60.40.20.0

    incident angle (degree)

    0.0001

    0.001

    0.01

    0.1

    1

    Probed depth control ?

    Sample:Al Wavelength:1.54056CuK1

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    Surface & Interface Structure

    250

    200

    150

    100

    50

    0

    Intensity

    (cps)

    807060504030

    2/(degree)

    Incident angle0.2 deg.0.5 deg.

    Al+Cu

    Al+Cu

    Cu(111)Cu(200)

    Cu(220)

    Al(111)

    Al(220)

    Al(311)

    Al(222)

    AlTransition layer

    Al+Cu

    Cu

    TaSiO2

    ~300nm

    Si (substrate)

    In-Plane XRDIn-Plane XRD

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    Todays contents (PM) Introduction

    Advantage of reciprocal lattice vector

    X-ray diffraction method

    Out-of-Plane

    In-Plane

    Pole figure

    Reciprocal space mapping High resolution rocking curve

    X-ray reflectivity

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    Single crystal and random orientation

    Single crystal Fiber orientation Random orientation

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    Orientation conditions and pole figure

    =90=0

    =90 =270

    =180

    =90=0

    =90 =270

    =180

    Random orientation

    =90=0

    =90 =270

    =180

    =90=0

    =90 =270

    =180

    =70.5 =35.3

    {111} fiber orientation

    =90=0

    =90 =270

    =180

    =90=0

    =90 =270

    =180

    (111) single crystal

    (111) pole figure (220) pole figure

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    Todays contents (PM)

    Introduction

    Advantage of reciprocal lattice vector

    X-ray diffraction method

    Out-of-Plane In-Plane

    Pole figure

    Reciprocal space mapping

    High resolution rocking curve

    X-ray reflectivity

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    Reciprocal space mapping Diffraction intensity distribution is plotted

    on reciprocal space.

    o

    ghkl2/

    2/

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    Epitaxial layer structures

    00lcubic[112]

    hh0

    00l cubic[112]

    hh0

    tetragonal[112]

    00lfilm[001]

    hh0

    substrate[001]

    Relaxation Strain Misorientation

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    Reciprocal space mapping

    GaAs115

    AlGaAs115

    qx/-1

    qy

    /-1

    Mosaic spread

    Mismatch (strained)

    Broadening in direction

    of sample rotation

    Broadening in direction

    of radial scan

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    Todays contents (PM)

    Introduction

    Advantage of reciprocal lattice vector

    X-ray diffraction method

    Out-of-Plane In-Plane

    Pole figure

    Reciprocal space mapping

    High resolution rocking curve

    X-ray reflectivity

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    High- resolution rocking curve

    The differences of lattice spacing between the substrate

    and epitaxial films are observed.

    Thickness and composition ratio of epitaxial films

    (when the degree of relaxation is known. )

    ko

    kgghkl

    2/

    2/

    log(I )K

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    When the sample has multilayer structure

    Complicated oscillation composed of oscillation from

    each layer is observed.

    10-7

    10-6

    10-5

    10-4

    10-3

    10-2

    10-1

    Reflectivity

    -2000 -1000 0 1000

    Deviation Angle (arcseconds)

    Si

    GeSiGeSi

    (004)

    GexSi(1-x) 50nm

    GexSi(1-x)300nmx=0.015Si substrate

    x=0.050 x=0.015

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    When the sample has superlattice structure

    Satellite peaks are observed.

    10-8

    10-7

    10-6

    10-5

    10-4

    10-3

    10-2

    10-1

    Reflectivity

    -8000 -4000 0 4000 8000

    Deviation Angle (arcseconds)

    GaAs0

    1

    2 34

    -1

    -2-3

    (004)

    InxGa(1-x)As 5nmGaAs 5nm

    10L

    GaAs substrate

    x=0.200

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    How to interpret the profile

    10-7

    10-6

    10-5

    10-4

    10-3

    10-2

    10-1

    Reflectivity

    -2000 -1000 0 1000

    Deviation Ang le (arcseconds )diffraction angle (arcsec.)

    Intensity

    (004)

    Si substrate

    GexSi(1-x)300nm x=0.015

    GexSi(1-x) 50nm x=0.050

    Si substrate

    SiGe mismatch

    SiGe mismatch

    Oscillation period

    SiGe thickness

    Oscillation period

    SiGe thickness

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    Todays contents (PM) Introduction

    X-ray diffraction method

    Out-of-Plane

    In-Plane

    Pole figure

    Reciprocal space mapping

    High resolution rocking curve

    X-ray reflectivity

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    What reflectivity reveals

    density

    Interface roughness

    thickness

    thickness

    X-ray reflectivity nondestructively reveals

    - layer structure of multi layers

    - thickness (1 to 1000nm)

    - density as an absolute value

    - surface and interface roughness

    substrate

    layer 1

    layer 2

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    How to interpret the profile

    10-5

    10-4

    10-3

    10-2

    10-1

    100

    Reflectivity

    86420

    2/(degree)

    Decay of reflectivity

    Surface roughness

    Decay of amplitude

    Interface roughness

    Period of oscillation

    Thickness

    Amplitude ofoscillation

    Contrast of density

    Critical anglec

    Density density 1density 2

    density 3

    thickness1thickness2

    roughness 1

    roughness 2roughness 3

    layer 1

    layer 2

    substrate

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    X-ray reflectivity measurement of TiN film

    Coating layerCoating layer

    10-7

    10-6

    10-5

    10-4

    10-3

    10-2

    10-1

    100

    Reflectivity

    2.01.51.00.50.0

    Grancing angle (degree)

    Simulation

    Experimental

    Layer

    density

    (g/cm 3)

    Thickness

    (nm)

    Roughness

    (nm)

    TiN 3.680 1.230 1.420

    TiN 2.900 8.400 1.000

    SiO2 2.260 127.700 0.220Si substrate

    SiO2Si

    TiN