X-parameters*: The Emerging Paradigm for …€¢ Keith Anderson • Loren Betts • Radek Biernacki...

X-parameters*: The Emerging Paradigm for Interoperable Characterization, Modeling, and Design of

Nonlinear Microwave and RF Components and Systems

Dr David E RootDr. David E. RootAgilent Technologies

Principal R&D ScientistHigh Frequency Technology Center

Santa Rosa, CA 95403

* X parameters is a trademark of Agilent Technologies Inc

© Copyright Agilent Technologies 2010

Page 1 D. E. RootD. E. RootX-parameters MicroApps Keynote

May 26, 2010

* X-parameters is a trademark of Agilent Technologies, Inc.

Outline

• Introduction

• X-parameter Basics

• Survey of X-parameter Breakthroughs

• SummarySummary

• References and Links



May 26, 2010

Outline

• Introduction– X-parameter and NVNA presentations at IMS Week– Acknowledgements– A nonlinear standard– Industry AdoptionIndustry Adoption


• Survey of X-parameter BreakthroughsSurvey of X parameter Breakthroughs

• Summary

R f d Li k• References and Links



May 26, 2010

X-parameter / NVNA presentations at 2010 IMS Week

• J. Xu, J. Horn, M. Iwamoto, D. E. Root, “Large-signal FET Model with Multiple Time Scale Dynamics from Nonlinear Vector Network Analyzer Data”IMS WE1A-3 Wednesday May 26, 8:40-9:00 AM Room 205AB

• J. Verspecht, J. Horn, D. E. Root “A Simplified Extension of X-parameters to Describe Memory Effects for Wideband Modulated Signals” ARFTG Conference Session 2-1 Friday, May 28, 2010 10:20AM (Hilton)

• K. Anderson “High-Power Measurements using the Agilent Nonlinear Vector Network Analyzer” MicroApps Wed. 9:10-9:30

• J.Sifri “Redefine How You Measure & Simulate Nonlinear Devices Using X-Parameters” MicroApps Wed 10:50-11:10MicroApps Wed. 10:50 11:10

• M. Marcu & R. Biernacki “Accurate Mixer Measurements Using Multi-tone X-parameter Models” MicroApps Wed. 11:50-12:10

• G Simpson “High Power Load Pull with X-Parameters – A New Paradigm for Modeling andG. Simpson High Power Load Pull with X Parameters A New Paradigm for Modeling and Design” MicroApps Wed. 4:50-5:20



May 26, 2010

Acknowledgements: Key Contributors

• Keith Anderson

• Loren Betts

• Radek Biernacki

• Jack Sifri

• Mary Lou Simmermacher

• Gary Simpson• Radek Biernacki

• Chad Gillease

• Daniel Gunyan

• Gary Simpson

• Franz Sischka

• Darlene Solomon

• John Harmon

• Jason Horn

• Tina Sun

• Yee Ping Teoh

• Yuchen Hu

• Masaya Iwamoto

• Mihai Marcu

• Dan Thomasson

• Jan Verspecht

• Kenn WildnauerMihai Marcu

• Troels Nielson

• Greg Peters

Kenn Wildnauer

• Bob Witte

• Jianjun Xu


Page 5 D. E. RootD. E. Root

• Mark Pierpoint • Yoshiyuki YanagimotoX-parameters MicroApps Keynote

May 26, 2010

X-Parameters: Mainstream Nonlinear Interoperable TechnologyElectronic design

automation softwareAgilent Nonlinear Vector

Network Analyzer

Nonlinear Nonlinear

CustomerNonlinear

Simulation & DesignMeasurements

Customer Applications

Nonlinear Modeling



May 26, 2010

*11 , 11 , 11( ) ( ) ( )F S m n T m n

pm pm pm qn qn pm qn qnB X A X A P A X A P A− += + +

X-parameters*: A nonlinear standard

The X parameter file format and underlying equations areThe X-parameter file format and underlying equations are open, documented, and human readable. The technology is founded on extensive published research publically available.

*"X-parameters" is a registered trademark of Agilent Technologies. For more information visit http://www.agilent.com/find/x-parameters-info



May 26, 2010

Capturing the imagination of the industry

Solves real-world problems now

Changing the way the industry worksp

Interoperable characterization, modeling and design

Continuous wave of innovations and award-winning modeling, and design

solutions

Potential to do for

a a d gresearch

nonlinear components and systems what S-parameters do forparameters do for linear components and systems



May 26, 2010

Agilent MMICs: Enabling NVNA and Agilent Instruments

Agilent proprietary InP IC process enables NVNA: U9391F Comb Generator10 MHz to 50 GHz(available only with NVNA)

X-parameters available

See: http://www.agilent.com/find/mmic and



May 26, 2010

p ghttp://www.agilent.com/find/mmic-info

Industry Leaders Adopting X-parameters Skyworks and Avago make X-parameters available to their customersy g p

USAUSA

Canada

UK

Germanyy

France

NetherlnandSweden

Turkey

Poland

“For more information on Skyworks X-parameter models, please contact your local Skyworks representative or write to [email protected]” www.avagotech.com/docs/AV02-2103EN



May 26, 2010

Industry Leaders Adopting X-parameters: Skyworks



May 26, 2010

Outline

• Introduction



• SummarySummary




May 26, 2010

S-parameters Solve All Small-Signal ProblemsBut devices must operate linearlyp y

Reflected Transmitted

Incident ModelB1 S11A1 + S12A2

Measure

Agilent Vector Network AnalyzerS

B1 = S11A1 + S12A2

B2 = S21A1 + S22A2

g y

S-Parameters

ReflectedDesign

What about large-signal

nonlinear problems?

Reflected

Incident

1 2S_ParamSP1

Step=0.1 GHzStop=10.0 GHzStart=1.0 GHz

S-PARAMETERS

freq (1 000GHz to 26 00GHz)

$TC

700.

.S(2

,1)



May 26, 2010

nonlinear problems?freq (1.000GHz to 26.00GHz)

X-parameters Solve Nonlinear ProblemsSame use model as S-parameters, but much more powerfulp , p

Reflected Transmitted

Incident Model

Measure

X

11

, 11

*

( )

( )

( )

F mpm pm

S m npm qn qn

T m n

B X A P

X A P A

X A P A

−

+

=

+

+Agilent Nonlinear Vector

Network Analyzer

X-Parameters, 11( )pm qn qnX A P A+

Reflected

Design

Reflected

Incident

1 2Agilent ADSEDA Software



May 26, 2010

X-parameters: Hierarchical Design and Validation

T D D i S ifi ti ( t t il bl )

ESL

System IntegratorsBottom-up Measurement-based VerificationElectronic System Level Design

Top-Down Design Specifications (not yet available)

Bottom-up Simulation-based Verification

X-parameterSpecs

20092009

X tX-par analysisSimulator

20092009

X-par generator

X-pars X t

2009200920092009

C dNVNA 50 GHz

X-pars X-parameter simulation cmp

XnP: Nativesimulation

load-dep X-parshi h X



May 26, 2010

Component vendors X-par meassimulationcomponent

high power X-pars

NVNA measurements: complex spectra and waveformscomplex spectra and waveforms

2 kA1kA

B 2kB

pkBpkA1kB 2k

Port IndexHarmonic Index

I I1I 2I



May 26, 2010

time time

X-parameters: Nonlinear Spectral MapsFrom S-parameters to harmonic time-domain L-P

1 1 11 12 21 22( , , , ..., , , ...)k kB F DC A A A A=

2 2 11 12 21 22( , , , ..., , , ...)k kB F DC A A A A=

2kA1kA

Port IndexHarmonic (or carrier) Index

1kB 2kB

X-parameters allow us to simplify the general B(A) relations:T d ffi i ti lit f lit &Trade efficiency, practicality, for generality & accuracyPowerful, correct, and practical

( )) (B S DC A S DC A+ The simplest X-parameters

,,

( ) *1

( )11 1

( ), 11( ,| |) ), ( ,( )

ef gef gh hef

S f hgh

T f hg

F fe f hB X DC A X DP C A DC A P AP A X +− ⋅= + +⋅∑ ∑

1 1 2 2( )) (i i iB S DC A S DC A= + The simplest X parameters are just linear S-parameters


Page 17 D. E. RootD. E. RootMay 26, 2010

,,, ,

f gf gfg h g h

X-parameters MicroApps Keynote

Measurement-Based Modeling & Design Flow“X-parameters enable predictive nonlinear design from NL data”

NVNA ADSSimulation and DesignNonlinear Measurements

X parameters enable predictive nonlinear design from NL data

v2v1

ConnectorX1

MCA_ZX60_2522MCA_ZX60_2522_1fundamental_1=fundamental

MCA_ZFL_11ADMCA_ZFL_11AD_1fundamental_1=fundamental

RR1R=25 Ohm

V_1ToneSRC14

Freq=fundamentalV=polar(2*A11N,0) V

RR11R=50 Ohm DC_Block

DC_Block1DC_BlockDC_Block2

I_Probei2

I_Probei1

X-parameter blocks

Data File25

75

76

20

-15 150

X-parameters enable accurate nonlinear simulation under small to moderate mismatch. (See later for large mismatch)

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-30

-20

-10

0

-40

10

.

.

-50

-40

-30

-20

-10

0

10

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

5

10

15

20

0

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

70

71

72

73

74

75

69

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-135

-130

-125

-120

-140

-115

2

4

6

8

10

12

14

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-80

-70

-60

-50

-40

-30

-90

-20

.

.

-100

-80

-60

-40

-20

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-40

-35

-30

-25

-20

-45

.

.

130

140

150

160

170

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

130

135

140

145

125

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

120

122

124

126

128

130

132

134

118

136

.

.

-10 -5 0 5 10 15-15 20

-30

-20

-10

0

10

-40

20

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-60

-70

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

0

-2

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-120

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

120

.

.

allowing prediction of component behavior in complicated nonlinear circuits. IMD / ACPR exact in narrow-band limit



May 26, 2010

“X-parameters: the same use model as S-parameters but much more powerful”

X-parameter Modeling Framework(slide courtesy Jan Verspecht)

V4

4GND I4 Input signals:Incident waves A1, A2, A3

Independent bias parameter V1 2

3

A1B1

A2B2

Independent bias parameter V4

Output signals:Outgoing waves B B B3

A3B3

Outgoing waves B1, B2, B3

Dependent bias parameter I4

Here A and B waves include multiple spectral components



May 26, 2010

Composition of X-parameter blocks from ckt. laws(slide courtesy Jan Verspecht)(slide courtesy Jan Verspecht)

4GND

V4

I4KCL + KVLin wave picture

1 2

3

A1

B1

A2

B2

B5

A5

A6

B6

3

A3B3 Simulator eliminates A2 and A5 by solving:

B2 = F(A1,A2,A3,V4,…) = A5

B5 = G(A5,A6) = A2

• X-parameters cascade with conventional device models, S-parameter blocks, andother X-parameters blocks. NO APPROXIMATION NEEDS TO BE INVOKED.

• X-parameters are the complete large-signal steady-state NL comp. description• Accuracy depends only on the degree to which the B(A) relations are characterized



May 26, 2010

• Accuracy depends only on the degree to which the B(A) relations are characterized

X-parameter Concept: Linearized Spectral Map around a Large-Signal Operating Point (LSOP)

Incident Port 1 Scattered Port 2Incident Port 1 Scattered Port 22 1 1 1 2 1 3 2 1 2 2 2 3( , , , , . . . , , , . . .)kB D C A A A A A A

Multi-variate NL map

≈large

small

Simpler NL map

( )2 11( , , 0, 0, 0, ...)F

kX DC A

s a

+Linear non analytic map

Simpler NL map

Linear non-analytic map( ) ( ) *2 , 11 2 , 11[ ( , ) ( , ) ]S T

k pj pj k pj pjX D C A A X D C A A+∑X-pars include exact nonlinear mapping to totally linear (S-pars) & everything in between



X pars include exact nonlinear mapping to totally linear (S pars) & everything in between Trade simplicity for accuracy.

May 26, 2010


X-parameters: Intrinsic DUT nonlinear propertiesDC f0 2f0 3f0 4f0 5f00

Aj2A11Inherently include frequency conversion [4]

X-parameters “calibrate out” effects of stimulus & instrument imperfections

2

( ) *3, 2 j

Ti jX A

2

( )3, 2 j

Si jX A

0 15 f f− 0 1f f+03 f

( )3F

iX& instrument imperfections.for intrinsic DUT properties

, ,

( )11

( )( ), 1 1

,,1

*1(| |) (( ) )

ef g gh ef hef

S fF fe f

T f hgh

g

hgh

g h hB X X A AA P A X P AP − + ⋅= +⋅+∑ ∑

Perfect match mismatch new mismatch terms



11( )j AP e ϕ=X-parameters MicroApps Keynote

Perfect match mismatch new mismatch terms

Simplest X-parameters for an Amplifier( )( ) ( ) 2 *()( ) ( )( ) TF SXB AA A PAP X X A A+ +( )( )

21 11( )21,21

2 *21 11 21 2121 11,21 11()( ) ( )( ) TF SXB AA A PAP X X A A= + +

( )( )11 11

( )11,11

211 11 21 2121 11,21 11()( ) ( )( ) TF SXB AA A PAP X X A A= + +

40dB ( )

21 11FX A

( )F

X-parameters reduce to (linear) S-parameters in the appropriate limit

11

( )11 11 11| | 0

F

AX A s

→→

40

20 ( )21 21

SX11

( )21 11 21| | 0

F

AX A s

→→

( )S 11

( )11,21 11 12| | 0

( )S

AX A s

→→

0

-20

21,21

( )TX 11

( )11,21 11 | | 0

( ) 0T

AX A

→→

11

( )21,21 11 22| | 0

( )S

AX A s

→→11| |

-25 -20 -15 -10 -5 0 5 10-40

20 ( )21,21TX 11| | 0A →

11

( )21,21 11 | | 0

( ) 0T

AX A

→→



May 26, 2010

|A11| (dBm) X-parameters are a superset of S-parameters

Outline• IntroductionIntroduction• X-parameter Basics• Survey of X-parameter Breakthroughs

– X-parameters for GSM amp.– Load-dependent X-parameters– 50 GHz Agilent NVNA– High-power X-parameter meas.– X-parameter generator in ADS– XnP component in ADS– Two-tone measured X-pars– Three-port measured X-pars– Nonlinear RF system design

M D i X– Memory: Dynamic X-params– Education, training, app. notes Summary

• Summary



• References and LinksX-parameters MicroApps Keynote

May 26, 2010

X-parameters solve key, real customer problems Example: GSM amp. and cell phone integrationH l IEEE E Mi C f A d O b 2008Horn et al IEEE European Microwave Conference, Amsterdam, October 2008

F d t l b t t 2

Red Elliptical shape: X-parameter predictionBlue circular shape Hot S22 prediction

Fundamental b-wave at port 2

-1 2

-1.1

-1

Measurementssmall colored crossesSkyworks amp

-1.5

-1.4

-1.3

-1.2

Imag

0 0.2 0.4Real

-1.7

-1.6

“X-parameters predict output match under large input drive Hot S does not”

Allowed Sony-Ericsson to take into account second-harmonic mismatch on amp in system integration



May 26, 2010

input drive Hot S22 does not

Complete X-parameter Model of GSM Amplifier“We didn’t think this was possible”“We didn’t think this was possible” – Sony-Ericsson engineer Joakim Eriksson, Ph.D

Unprecedented capability

1015

Output Voltage

Unprecedented capabilityData acquisition 30x faster

.

-10-505

10

-15

Volts

02

-2

4

Volts

TX_Enable

VAPC

1 2 3 4 5 6 7 8 9 10 11 12 13 14 150 16

0.51.01.5

0.0

2.0

Time (ms)

Volts



May 26, 2010

( )

“X-parameters provide a nonlinear electronic interactive datasheet based on data”

Load-dependence of another GSM commercial Amp from X-parameters measured at only 50 ohms 900 MHz Vbatt=3.7, Vapc = 1.4

System Integrator wants to use X-parameters to compareperformance among vendor parts within their system

Pout, 1dBm contour spacingm7IndexPout2=$LPData ZPout2=0 010 / 40 002

28.000m8indep(m8)=Pdel contours p 0 040 / 137 001

12 Red: LoadPull measurementsBl Si l ti i X

p g p y

$LPData..ZPout2=0.010 / -40.002Pout2=34.364350impedance = Z0 * (1.015 - j0.012)

Pdel_contours_p=0.040 / -137.001level=34.364350, number=1impedance = Z0 * (0.942 - j0.051)

Blue: Simulations using X-parameters extracted in 50 ohms

m7m8 50 ohm X-parameters, predict performance well over a wide range of impedance

But what if we want even more accuracy?



May 26, 2010

X-parameters with arbitrary load-dependence

1 1 11 12 21 22( , , , ..., , , ...)k kB F DC A A A A=

2 2 11 12 21 22( , , , ..., , , ...)k kB F DC A A A A=

2kA1kA

Port IndexHarmonic (or carrier) Index

1kB 2kBX-parameters allow us to simplify the general B(A) relations:Trade efficiency, practicality, for generality & accuracyPowerful, correct, and practical

,,

( ) *1

( )11

,1

( ), 1

,1( ,| |) ), ( ,( )

ef gef gh hef

S f hgh

g h

T f hg

F fe

g hf hB X DC A X DP C A DC A P AP A X +− ⋅= + +⋅∑ ∑

, , p

, ,

( )11 21

( ), 11

( ) *11 21

,1

,2 ( , ,| |,( ,| ( , ,| |,|,| ) )| ),

ef ghghf efe

F fe f

S f h T f hg

hgh

g hh

g

B X DC A A X DC A X DC AA A AP AP Pθθθ − += + + ⋅⋅∑ ∑

,,

( )11 2

,

( ) *( ), 1 2 1

,1 1 2( , , ) (( ,| , ,|, ) )

ef ef f ghg eh

S f hgh

g

T f hgh

gh

F f

he f X DC XAB X DC A AP DP C AA P− += Γ + + Γ ⋅Γ ⋅∑ ∑



“X-parameters unify S-parameters and Load-Pull”X-parameters MicroApps Keynote

NVNA+Load-Pull = Instant Large-Signal Model

• “Drag and drop measured X-parameters for immediate ADS simulation. This is a breakthrough for the industry.”

– Gary Simpson Maury Microwavey p y

NVNA +Load-Pull



May 26, 2010

Load-Dependent X-Parameters of a FETWJ FP2189 1W HFET

G. Simpson et al IEEE ARFTG Conference, December, 2008

15

20

0.25

0.30

Me

ag

eg

e Sim

Measured and Simulated Voltage and Current Waveforms

Measurements X-par Simulation

Pout Contour (dBm)

WJ FP2189 1W HFET

0

5

10

0.10

0.15

0.20

ea

sure

dC

urre

ntM

ea

sure

dV

olta

Sim

ula

ted

Vo

lta

mu

late

dC

urre

nt

0.2 0.4 0.6 0.80.0 1.0

-5 0.05

time, nsec

Measured and Simulated Voltage and Current Waveforms0 30

Measured and Simulated Dynamic Load Line

8

10

12

14

16

0.2

0.3

0.4

0.5

Me

asu

red

Cu

sure

dV

olta

ge

late

dV

olta

ge S

imu

late

dC

u0.15

0.20

0.25

0.30

asu

red

Cur

ren

tm

ula

ted

Cu

rre

nt

0.2 0.4 0.6 0.80.0 1.0

4

6

2

0.1

0.0

time, nsec

urre

ntM

ea

sS

imu

urre

nt

0 2 4 6 8 10 12 14 16-2 18

0.10

0.05

MeasuredVoltage

Me

SimulatedVoltage

Sim

E i t l H i B l X t if S t d l d ll



Experimental Harmonic Balance X-parameters unify S-parameters and load-pull


Harmonic Load-Tuning Predictions from X-parametersJ. Horn et al, IEEE Power Amplifier Symposium, September, 2009

Fundamental Output Magnitude Second Harmonic Output Magnitude

, p y p , p ,

Cree CGH40010 10 W RF Power GaN HEMT

Contours vs. 2nd Harmonic Load (Fixed input power and fundamental load)

X-Parameter Prediction: Blue

)

Measured with Harmonic LP System: RedKey Agilent IP calibrates out uncontrolled harmonic impedances presented by tuner &re-grids impedance data for accuracy and interpolation in ADS



May 26, 2010

Harmonic load-pull may be unnecessary! Simpler, cheaper, faster alternatives exist

Load-dependent X-parameter model for GaN HEMT:

GPIB

Bias

Cree CGH40010 G N HEMT

See refs [13] and [14]

PNA‐X

MDC S l

Bias Tees

NVNA

GaN HEMT10 W packaged

transistor Maury Software

U

DC Supply NVNA Firmware

• 900 MHz• Measure Load-dependent

DUT Maury Tuner

USB

Maury Tuner

X-parameters vs power at 9 impedances

• 4 harmonics measured2 d 3 dTunerTuner

9 load states at f1

• probe tones at 2nd and 3rd

harmonics• harmonic impedancesuncontrolledX-parameter file taken into ADS



May 26, 2010

uncontrolledpfor independent validation

Harmonic Load-pull Setup: For Validation Only

[14] J. Horn et al Submitted to CSICS2010

•Waveforms measured

PNA‐X

GPIB

Bias Tees

•Waveforms measured versus power at each set of 729 harmonic loads as controlled independently

Maury Software

DC Supply NVNA Firmware

by the tuners.•Fundamental, second, and third complex impedances setSoftware

USB

Firmware impedances set independently

DUT Maury Tuner Z1

Maury Tuner

Maury Tuner Z2

Maury Tuner Z2



May 26, 2010

9 states 9 states 9 states

Load-dependent X-parameters versus harmonic load-pullversus harmonic load-pullLoad-dependent X-pars Harmonic load-pull validation

• One output tuner to vary load at fundamental frequency. At each load inject small tones at 2nd

• Three output tuners to vary loads at fundamental, second,and third harmonicsload inject small tones at 2

and 3rd harmonic freqs(9x(1+2x2) = 45 measurements,act all 125 meas rements)

and third harmonics independently (9x9x9 = 729 measurements)

actually ~125 measurements)

• Measured DC – 4th harmonic • Measured DC - 4th harmonic

• Take into ADS. Present 729 independent loads to model



May 26, 2010

Compare waveforms, PAE, dynamic load-lines, etc.

Prediction of GaN HEMT harmonic-load dependencefrom fundamental-only load-dependent X-pars

60

70

80

PAE

Courtesy of J. Horn See refs [13] and [14]

30

40

50Z1Z2 Z3 Cree

Harmonic loads

6 8 10 12 14 16 184 20

20

10

CGH40010 GaN HEMT

Pin (available)2.0

y

Id [A] 70 2.0

Vd VdId

0.5

1.0

1.5

Id [A]

30

40

50

60

0 5

1.0

1.5

Vd IdVdId

10 20 30 40 50 600 70

0.0

-0.5

Vd [V]X t d l

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

10

20

30

0

0.0

0.5

-0.5

Time (nanoseconds)




X-parameter model Harmonic time-domain load-pull measurements

Time (nanoseconds)


50

60

70

ZCree

CGH40010

PAE

20

30

40Z1Z2 Z3

CGH40010 GaN HEMT Harmonic loads

6 8 10 12 14 16 184 20

10

2.0

y a c oad e

Pin (available)70 2.0

VdId

VdId

1.0

1.5Id [A]

30

40

50

60

1.0

1.5

Vd

0.0

0.5

0.5

0

10

20

-10

0.0

0.5

-0.5



0 10 20 30 40 50 60-10 70

May 26, 2010


Vd [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

Time (nanoseconds)

70

PAE vs. Available Input Power


50

60

70

Cree CGH40010

PAE

20

30

40Z1Z2 Z3

CGH40010 GaN HEMT Harmonic loads

6 8 10 12 14 16 184 20

10

y 60

70

1 5

2.0

Vd IdVdId

Pin (available)

0 5

1.0

1.5

2.0

30

40

50

60

0.5

1.0

1.5

Id [A]

-0.5

0.0

0.5

-1.0

10

20

0

-0.5

0.0

-1.0



10 20 30 40 50 600 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

May 26, 2010


Vd [V] Time (nanoseconds)


50

60

70

PAE

20

30

40

_Z1Z2 Z3

Cree CGH40010

Harmonic loads

6 8 10 12 14 16 184 20

10

70 2.0

2.0

GaN HEMT

Id Vd VdId

Pin (available)

30

40

50

60

0 5

1.0

1.5

1.0

1.5

Id [A] Vd IdVdId

0 2 0 4 0 6 0 8 1 0 1 2 1 4 1 6 1 8 2 0 2 20 0 2 4

10

20

30

0

0.0

0.5

-0.5

0.0

0.5

-0.5



0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.410 20 30 40 50 600 70

0.5

May 26, 2010


Vd [V] Time (nanoseconds)

Implications of arbitrary load-dep. X-parameters

• Input and output harmonic load tuning dependence predictable

Harmonic load pull may be unnecessary for many apps• Harmonic load-pull may be unnecessary for many apps.

• Source pull may be unnecessary (apart from power transfer)

• Complementary approach to “compact” nonlinear device models

See [13] and [14] for more details[ ] [ ]

See demo at Maury Booth at IMS



May 26, 2010

Simple SetupFast, automated measurementsTime-domain waveforms

Load-dependent X-parameters as a measurement-based device model“The data is the model”The data is the model

Useful for:• High-power device characterization• X-parameter transistor modelsp• multi-stage amps w. large mismatch

Control power, frequency, bias and load at fundamental frequency: faster, fewer d t i l t th h i L Pdata, simpler setup than harmonic L-P

• Get sensitivity to harmonic loads at output and input ports without having to control harmonic impedances

• Estimate the effects of source-pull on device performance in ADS without having



May 26, 2010

to control source impedance

X-parameters at 100W(courtesy K. Anderson) Gain Compression at fundamental

Mini-Circuits ZHL-100W-52

51.0

51.5

100 MHzParameter Description

P t N b ZHL 100W 52

50.0

50.5

/a1

[::,1

])

Part Number ZHL-100W-52

Pout max(@1dB compression)

45dBm (min, 50M-500MHz)47dBm (typ, 50M-500MHz)

49.0

49.5

dB

(b2[

::,1]

/

Pout max(@3dB compression)

46.5dBm (min, 50M-500MHz)48.5dBm (typ, 50M-500MHz)

48.0

48.5

47 5

Pin max (no damage)

+3dBm

Gain 48dB (min)50dB (typ)

-18 -16 -14 -12 -10 -8 -6 -4 -2-20 0

47.5

pinInput VSWR 1.45:1 (typ)

Output VSWR 2.5:1 (typ)X-parameters have been

d t 250 W© Copyright Agilent Technologies 2010


May 26, 2010

measured at 250 W

X-parameters at 100W

XS21,21

5 harmonics magnitude and phase:XT21,21

5 harmonics, magnitude and phase: fund=150 MHz

150

200

3

4

::])

ts(Il

XS23,21

50

0

50

100

150

1

0

1

2

3

g_in

dex,

real

_ind

ex, load.i[im

ag_index,r

XT23,21

2 4 6 8 10 12 14 16 180 20

-150

-100

-50

-200

-3

-2

-1

-4

ts(v

load

[imag

real_index,::])



May 26, 2010

2 4 6 8 10 12 14 16 180 20

time, nsec

Generate an IP-Protected X-parameter model

Courtesy of J. SifriSee his MicroApps talk at




See his MicroApps talk at10:50-11:10

Single Tone Amp model with 50 ohm loadIP protected model; Fast X parameter simulation component (20x faster)IP-protected model; Fast X-parameter simulation component (20x faster)

X-pars Vs ckt-level PA Results

Test the PA circuit




Multi-tone, Multi-port X-parameters: Two large signals at different frequencies at different portssignals at different frequencies at different portsLess restrictive approximation to the general theory:Linearization around the multi-tone nonlinear responses

1A1

2BTerms linear in the

remaining components( )

, , 1,10 2 ,01( , , 0, 0, ...)Fi kl i klB X A A= +



May 26, 2010

See M. Marcu & R. Biernacki MicroApps talk at 11:50-12:10

Mixers: X-parameters extracted from an Agilent DC-50 GHz InP-based Mixer 1GC1-8068: Matched at IFAccurate fast IP protectedAccurate, fast, IP-protected

Gain (dB) Phase (deg)Down

Conversion

UpCConversion

LO: 45 GHz RF: 45.1 GHz LO power = 3.5 dBmSi l ti b d



May 26, 2010

LO: 45 GHz RF: 45.1 GHz LO power 3.5 dBmCircuit Model (solid blue) X-parameter Model (red points)Simulation-based

Mixers: X-parameters extracted from an Agilent DC-50 GHz InP-based Mixer 1GC1-8068: Mismatched (10 Ohms) at IFAccurate, fast, IP-protected

Gain (dB) Phase (deg)Down

Conversion

UpUpConversion

LO: 45 GHz RF: 45.1 GHz LO power = 3.5 dBmSi l ti b d



May 26, 2010

LO: 45 GHz RF: 45.1 GHz LO power 3.5 dBmCircuit Model (solid blue) X-parameters (red points)Simulation-based

Agilent MMICs: Available for purchase

50 GHz InP-based Mixer Part number: 1GC1-8068Part number: 1GC1-8068

See: http://www.agilent.com/find/mmic

X-parameters available



May 26, 2010

New: Two-tone X-parameter NVNA measurementsSee Demo at Agilent Booth g

•Magnitude and Phase of intermod products and sensitivity to mismatch•Measure and simulate freq-dependence & asymmetry of complex intermods•Design nonlinear circuits that cancel distortionDesign nonlinear circuits that cancel distortion•ADS X-parameter generator and XnP component can do this already

Red = 2‐Tone X‐parameters predictionBl I d d t d d t

Courtesy J. Horn

-22

-21

-20

(dB

m)

-22

-21

-20

(d

Bm

)

Blue = Independent measured data

26

-25

-24

-23

IM3

_L

ow

-25

-24

-23

-22

IM3

_H

igh

1.0

E6

2.0

E6

3.0

E6

4.0

E6

5.0

E6

6.0

E6

7.0

E6

8.0

E6

9.0

E6

0.0

1.0

E7

-26

-27 1.0

E6

2.0

E6

3.0

E6

4.0

E6

5.0

E6

6.0

E6

7.0

E6

8.0

E6

9.0

E6

0.0

1.0

E7

-25

-26



May 26, 2010

Tone Spacing Tone Spacing

Soon: 3-Port X-parameter Measurements

For characterization and measurement-based simulation of three-port components (mixers, converters, switches)

Note: ADS can already generate and simulate with multi-port, multi-tone X t

V4

4GND I4

X-parameters

Here A and B

1 2A1

B1

A2

B2

waves include multiple spectral components

3

A3B3



May 26, 2010

33

Design Nonlinear RF Systems

Antenna

LTCC LPF

RFICMMIC PA




X-Parameter technology in Agilent EEsof EDA’s Platforms

Available Today

See Demo atAgilent Booth See Demo at



May 26, 2010

Today Agilent Booth Agilent Booth

Extending X-parameters to long-term memoryOriginal X-parameters are Static Spectral Mappings

Static transmission

NVNA

Original X parameters are Static Spectral Mappings

Can be measured underStatic transmission X-parameter: XF21

Can be measured under True CW, pulsed DC orPulsed RF conditions

A1 B2

time

1 2

B2

XF21

( ) ( )Frequency Domain:

A1

( ) ( )11212

AjeAXFB ϕ=



May 26, 2010

1Courtesy Jan Verspecht

Modulation Simulated in Envelope Domain:

A1(t) B2(t)ADS envelope simulator

t tt t

XF2121B2

( ) ( ))(1212

1)()( tAjetAXFtB ϕ=Envelope Domain:

A

( )1212 )()(X-parameters determine Quasi-Static Response

No “BW” effects



May 26, 2010

A1Symmetric intermods independent of envelope rate (or history)

Memory Effects: Beyond Static X-parametersMemory Effects:

When output depends not only in instantaneous input but also on past input values

• Response to fast input envelope variations may violate quasi-static assumption for useResponse to fast input envelope variations may violate quasi static assumption for use in envelope domain for estimation of response to modulated signals

• Physical causes of memory: Dynamic self-heating, bias-line interaction, trapping effects caused by additional dynamic variables – multiple time-scale problem

Hysteresis in compression plotIM3 products asymetricDepend on tone spacing

HBT IM3 [dB ] t ti [H ] GHBT IM3 [dBm] versus tone separation [Hz] Gain-compression



May 26, 2010

Dynamic X-parameters: Long-Term MemoryF d t l “hidd i bl ” th Anadigics AWT6282

ain

Fundamental “hidden variable” theoryVerspecht et al “Extension of X-parameters to include long-term dynamic memory effects,” IEEE MTT-S Int’l Microwave Symposium Digest, 2009. pp 741-744

Anadigics AWT6282

Vol

tage

Ga

Best paper of the day award winner

( ) ( ) ( )( )tAjeduuutAtAGtAXFtB ϕ

⎭⎬⎫

⎩⎨⎧

−+= ∫∞

021 ,)(,)()()(

A1 (V)

3.2

3.3

V)

3.0

3.1

B2

Am

plitu

de (V

17

-14

184 186 188 190 192 194 196 198182 200

2.9

Time (µs)Measured Data: RedMemory model prediction: Blue

-23

-20

-17

Sim

IM3

Mea

sIM

3



May 26, 2010

Memory model prediction: BlueStatic X-parameter prediction: Magenta-4.0E6 0.0 4.0E6-8.0E6 8.0E6

-26

Offset Frequency

Dynamic X-parameters Predict Memory Effects0.5|B|

0.4

0.5|B|Vpeak 60kHz Tone Spacing

Courtesy

ZFL11AD AmpF0= 1.75GHz

0.2

0.3

yJ. Verspecht

0.0

0.1

30kHz Tone Spacing

0.00 0.05 0.10 0.15

|A| (Vpeak)Measurement 60kHz Tone Spacing Measurement 30kHz Tone SpacingModel 60kHz Tone Spacing Model 30kHz Tone Spacing

See Latest Research Results on Dynamic X-parametersJ. Verspecht, J. Horn, D. E. Root “A Simplified Extension of X-parameters to Describe Memory Effects for Wideband Modulated Signals”



May 26, 2010

to Describe Memory Effects for Wideband Modulated Signals ARFTG Conference Session 2-1 Friday, May 28, 2010 10:20AM (Hilton)

Outline

• Introduction



• SummarySummary




May 26, 2010

X-parameter universe is expanding rapidlyPowerful practical interoperable solutions for nonlinear

Summary:Powerful, practical interoperable solutions for nonlinear characterization, modeling, and design of microwave and RF

X-parameters: “doing for nonlinear components and systems what S-parametersdo for linear components and systems”

• X-parameters for GSM amp.

Breakthroughs:do for linear components and systems

• Load-dependent X-parameters• 50 GHz Agilent NVNA• High-Power X-parameter meas.

X parameter generator in ADS• X-parameter generator in ADS• XnP component in ADS• Two-tone measured X-pars• Three-port measured X-pars• Three-port measured X-pars• Nonlinear RF system design• Memory: Dynamic X-params• Education, training, app. notes



May 26, 2010

Education, training, app. notes• Industry is adopting paradigm

X-Parameters: Agilent Completes the Nonlinear Puzzle!Electronic design

automation softwareAgilent Nonlinear Vector

Network Analyzer

Nonlinear Nonlinear

CustomerNonlinear

Simulation & DesignMeasurements

Customer Applications

Nonlinear Modeling



May 26, 2010

*11 , 11 , 11( ) ( ) ( )F S m n T m n

pm pm pm qn qn pm qn qnB X A X A P A X A P A− += + +

The X-parameter paradigm shift: the universe is generally nonlinear

“Remember S-parameters? They were so cute.”

the universe is generally nonlinearlinearity is a small part

The old paradigm: linear S-parameters



May 26, 2010

Selected References and Links1. D. E. Root, J. Horn, L. Betts, C. Gillease, J. Verspecht, “X-parameters: The new paradigm for measurement, modeling, and design

of nonlinear RF and microwave components ” Microwave Engineering Europe December 2008 pp 16 21of nonlinear RF and microwave components, Microwave Engineering Europe, December 2008 pp 16-21. http://www.nxtbook.com/nxtbooks/cmp/mwee1208/#/16

2. D. E. Root, “X-parameters: Commercial implementations of the latest technology enable mainstream applications” Microwave Journal, Sept. 2009, http://www.mwjournal.com/search/ExpertAdvice.asp?HH_ID=RES_200&SearchWord=root

3. J. Verspecht and D. E. Root, “Poly-Harmonic Distortion Modeling,” in IEEE Microwave Theory and Techniques Microwave Magazine, June, 2006.

4 D E Root J Verspecht D Sharrit J Wood and A Cognata “Broad-Band Poly-Harmonic Distortion (PHD) Behavioral Models4. D . E. Root, J. Verspecht, D. Sharrit, J. Wood, and A. Cognata, Broad Band, Poly Harmonic Distortion (PHD) Behavioral Models from Fast Automated Simulations and Large-Signal Vectorial Network Measurements,” IEEE Transactions on Microwave Theory and Techniques Vol. 53. No. 11, November, 2005 pp. 3656-3664

5. J. Verspecht, J. Horn, L. Betts, D. Gunyan, R. Pollard, C. Gillease, D. E. Root, “Extension of X-parameters to include long-term dynamic memory effects,” IEEE MTT-S International Microwave Symposium Digest, 2009. pp 741-744, June, 2009

6. J. Verspecht, J. Horn, D. E. Root “A Simplified Extension of X-parameters to Describe Memory Effects for Wideband Modulated Signals,” Proceedings of the 75th IEEE MTT-S ARFTG Conference, May, 2010Signals, Proceedings of the 75 IEEE MTT S ARFTG Conference, May, 2010

7. J. Xu, J. Horn, M. Iwamoto, D. E. Root, “Large-signal FET Model with Multiple Time Scale Dynamics from Nonlinear Vector Network Analyzer Data,” IEEE MTT-S International Microwave Symposium Digest, May, 2010.

8. J. Horn, S. Woodington, R. Saini, J. Benedikt, P. J. Tasker, and D. E. Root; “Harmonic Load-Tuning Predictions from X-parameters,” IEEE PA Symposium, San Diego, Sept. 2009

9. D. Gunyan , J. Horn, J. Xu, and D. E. Root, “Nonlinear Validation of Arbitrary Load X-parameter and Measurement-Based Device Models,” IEEE MTT-S ARFTG Conference, Boston, MA, June 2009, , , ,

10. G. Simpson, J. Horn, D. Gunyan, and D. E. Root, “Load-Pull + NVNA = Enhanced X-Parameters for PA Designs with High Mismatch and Technology-Independent Large-Signal Device Models, ” IEEE ARFTG Conference, Portland, OR December 2008.

11. J. Horn, J. Verspecht, D. Gunyan, L. Betts, D. E. Root, and J. Eriksson, “X-Parameter Measurement and Simulation of a GSM Handset Amplifier,” 2008 European Microwave Conference Digest Amsterdam, October, 2008

12. J. Verspecht, D. Gunyan, J. Horn, J. Xu, A. Cognata, and D.E. Root, “Multi-tone, Multi-Port, and Dynamic Memory Enhancements to PHD Nonlinear Behavioral Models from Large-Signal Measurements and Simulations,” 2007 IEEE MTT-S Int. Microwave Symposium Digest, Honolulu, HI, USA, June 2007.

13. D. E. Root, J. Xu, J. Horn, M. Iwamoto, and G. Simpson, “Device Modeling with NVNAs and X-parameters,” 2010 IEEE MTT-S INMMiC Conference, Gοtenborg, Sweden, April 26, 2010

14. J. Horn, G. Simpson, D. E. Root, “GaN Device Modeling with X-parameters,” submitted to 2010 IEEE CSICS, October, 201015. http://www.agilent.com/find/x-parameters for X-parameters16. http://www.agilent.com/find/nvna for NVNA



May 26, 2010

17. http://www.agilent.com/find/mmic for Agilent MMICs18. http://www.agilent.com/find/x-parameters-info for Trademark Usage, Open Documentation & Partnerships

X-parameters*: The Emerging Paradigm for …€¢ Keith Anderson • Loren Betts • Radek Biernacki...

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Transcript of X-parameters*: The Emerging Paradigm for …€¢ Keith Anderson • Loren Betts • Radek Biernacki...