WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe...
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Transcript of WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe...
![Page 1: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/1.jpg)
WP4 Organic crystal deposition
Mojca Jazbinsek
Rainbow Photonics AG
SOFI meeting Karlsruhe 2013-04-22
![Page 2: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/2.jpg)
SOFI meeting 2013-04-22 Rainbow Photonics AG
Summary RB activities Jan-April 2013
Melt deposition of BNA on SOFI2 chips with
CMOS electrodes: 6 samples sent to KIT on April 15, 2013 for evaluation
Melt deposition of OH1 on SOFI2 chips with
electrodes First tests
![Page 3: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/3.jpg)
SOFI meeting 2013-04-22 Rainbow Photonics AG
Melt deposition technique used Chips are covered with a glass substrate
Material molten at the edge and flows between by a capillary force
Slow cooling -> Crystallization
Deposition process needs to be optimized for a particular chip type (surface properties)
Removal of the cover glass
![Page 4: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/4.jpg)
SOFI meeting 2013-04-22 Rainbow Photonics AG
SOFI2-CMOS metalized chips
Different geometry and conditions for
melt flow & crystal growth compared to
chips previously tested
![Page 5: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/5.jpg)
SOFI meeting 2013-04-22 Rainbow Photonics AG
Deposition of BNA on SOFI2-CMOS chips
Most of the chip: very flat surface, weak wettability
of the melt
Cover (flat) glass forms a close contact with the surface
Melt flow is very slow (compared to the same conditions
@previous chips)
Trenches with waveguides present a barrier for the flow,
but once it is crossed, the melt can flow faster within the
trenches (not always…)
![Page 6: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/6.jpg)
SOFI meeting 2013-04-22 Rainbow Photonics AG
Deposition of BNA on SOFI2-CMOS chips
Using vacuum and melt deposition at higher
temperatures, a good covering of the chip with
melt has been achieved.
Reproducible conditions for the crystal growth
could not be achieved yet each chip was
processed individually
![Page 7: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/7.jpg)
SOFI meeting 2013-04-22 Rainbow Photonics AG
Example 1:
Only a part crystalline, the rest amorphous (which
later at room temperature slowly grows further, but dendritic)
Previous chips: no amorphous BNA/dendrites
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SOFI meeting 2013-04-22 Rainbow Photonics AG
Example 2:
Very thin BNA film; thickness 0 on top, but there
is still material and crystallization in channels
![Page 9: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/9.jpg)
SOFI meeting 2013-04-22 Rainbow Photonics AG
Example 3:
In most cases the BNA crystal stayed on chip after
removing the cover. In this example, it remained
mostly on the cover, but the channels still
contain crystalline
material
Previous chips: easier cover removal
![Page 10: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/10.jpg)
SOFI meeting 2013-04-22 Rainbow Photonics AG
Example 4:
Bad crystal on top (polycrystalline, holes), but
seems single crystalline within the channels
![Page 11: WP4 Organic crystal deposition Mojca Jazbinsek Rainbow Photonics AG SOFI meeting Karlsruhe 2013-04-22.](https://reader030.fdocuments.in/reader030/viewer/2022032701/56649c775503460f9492c05e/html5/thumbnails/11.jpg)
SOFI meeting 2013-04-22 Rainbow Photonics AG
Example 5:
Low damage after removal, good single
crystallinity
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SOFI meeting 2013-04-22 Rainbow Photonics AG
Melt deposition of OH1
Material Pointgroup
n (|| polar axis)
r(highest tensorcomponent)
Melting Tm (°C)
Stableat Tm
DASTDSTMS m 2.1 50 pm/V
(χ(2)=580 pm/V @1.5 µm) 256 N
OH1 mm2 2.1 50 pm/V 212 Y
OH2 m n.m. n.m. (>60 pm/V expected) 242 Y
DAT2 2 1.5 8 pm/V 235 Y
BNA mm2 1.8n.m. 30 pm/V (Dalton 2011)our estimation: ~15 pm/V
102 Y
DAN 2 1.6 13 pm/V (@633 nm) 166 Y
Compared to BNA: + higher EO coefficient+ higher melting temperature– higher refractive index (lower contrast, PVA cover less effective)– growth much more challenging
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SOFI meeting 2013-04-22 Rainbow Photonics AG
Melt deposition of OH1 Growth challenges (Dec. 2012):
Parts may stay amorphous – crystal growth easily inhibited Dendritic growth
Slow growth: good single crystals, but many parts amorphous Fast growth: instabilities lead to dendritic growth The conditions change on different substrates Growth results less reproducible as with BNA
2013: With SOFI2-CMOS chips very similar observed also for BNA
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SOFI meeting 2013-04-22 Rainbow Photonics AG
OH1 on bare SOFI1 (Q4 2011)
Best example
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SOFI meeting 2013-04-22 Rainbow Photonics AG
First tests with OH1
Deposition is challenging, no general
conclusions yet
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SOFI meeting 2013-04-22 Rainbow Photonics AG
Conclusions
New geometry for the
crystal growth brings new
challenges
Once the growth is
successful, this geometry is
expected to be beneficial
also for crystals
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SOFI meeting 2013-04-22 Rainbow Photonics AG
Planned / needed
Feedback from KIT (SOFI2-CMOS-BNA)
Deposition experiments with OH1
SOFI 3 (June?)
Samples:
4 SOFI2 chips left (edge of the wafer)
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SOFI meeting 2013-04-22 Rainbow Photonics AG
WP4 Deliverables, Milestones
M4.1 [M21] Optimized processes for EO polymers and crystals with sufficient yield (RB, GO)
M4.2 [M21] Processes for chalcogenides (CUDOS).
M4.3 [M21] Identification of optimal electro-optic materials with respect to optical and electro-optical
properties and to thermal stability (RB).
M4.4 [M30] Identification of optimal electro-optic materials with respect to integration into silicon (RB).
D4.1 [M24] Silicon-organic chips with EO waveguides (first device run) handed over to WP5 (RB, GO,
UKA).
D4.2 [M30] Report on full potential and limitations of the electro-optic materials for hybrid integration with
silicon for all approaches & comparison of different solutions (GO, RB, CUDOS).
D4.3 [M30] Silicon-organic QAM modulator chips (second device run) handed over to WP5 (RB, GO, UKA)
D4.4 [M36] Report on electro-optic polymers and organic single crystals suitable for reproducible optical
functionalization of SOI in large quantities (GO, RB).
D4.5 [M40 = April] Third device run, coated and poled, handed over to WP5 (RB, GO,KIT).
D4.6 [M40 = April] Chips functionalized with chalcogenides handed over to WP5 (CUDOS, KIT)