Wafer Bonding Processes for the Manufacture of MEMS ... · MEMS (MicroElectroMechanical Systems)...
Transcript of Wafer Bonding Processes for the Manufacture of MEMS ... · MEMS (MicroElectroMechanical Systems)...
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Wafer Bonding Processes for the Manufacture of MEMS devices for
the Mobile Applications
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Outline
• EV Group at a Glance• Market Drivers – MEMS• Bonding Family Tree• Requirements for Wafer Bonding Processes for
Mobile Applications• Example: Invensense MEMS device• Eutectic and TLP bonding• Low Temperature Oxide Bonding
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EV Group (EVG) is a global supplier of • Wafer Bonders• Aligners• Coaters / Developers• Temporary Bonders / Debonders (Laminator)• Cleaners• Inspection Systems
EV Group (EVG) is a global supplier to• Advanced Packaging, 3D Interconnect• MEMS (MicroElectroMechanical Systems)• SOI (Silicon-On-Insulator)• Compound Semiconductor and Silicon based Power Devices• Nanotechnology
EV Group holds the dominant share of the market for wafer bonding equipment (especially SOI bonding) and is a leader in lithography for advanced packaging and nanotechnology.
EV Group at a Glance
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Market Drivers - MEMS
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Market Drivers - MEMS
Major growth for MEMS devices related to Mobile Applications
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Market Drivers - MEMS
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Price Erosion in Consumer MEMS
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Drivers - Summary
• Consumer Applications are a major driver for growth in shipment volumes of MEMS devices
• Growth rate in units shipped (24%) is higher than growth rate in revenue increase (14%) Price Erosion
• “Combo Sensors“ are expected to gain significant traction starting by 2012. Higher integration density desired Capability for forming electrical connections may be required
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Responses to Price Erosion
– Design libraries– Die shrinks
• More die per wafer• Smaller package and increased function per unit
area– Standard process
• Is this the beginning of the end of the “One Product, One Process” paradigm?
– Wafer size increase– Yield management– Equipment utilization
Topic for today‘s presentation
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Bonding Family Tree
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Requirements for Wafer Bonding Processes for Mobile Applications• Low cost
– Low space consumption• Small bond line width• Good alignment accuracy
– High throughput– Integration in existing fab environment
• Materials selection
• Technical requirements– Good hermeticity– Ability to create electrical connections– Low temperature processing
• Thermal budget to be compatible with CMOS wafers
Replace Glass Fritt
Eutectic
Use materials already established
Metal / Hybrid
Metal
Eutectic / Plasma
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Bonding Family Tree
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Invensense MEMS Device
Chipworks recently had a look inside their new three-axis digital gyroscope, the ITG-3200. The device is built using the Nasiri, single-chip, MEMS process, where the MEMS layer is sandwiched between a fusion-bonded cap wafer and the ASIC. The ASIC and MEMS are bonded using eutectic metal bond. The SEM image in Figure 1 provides a tilt-view of the corner of the MEMS chip, where the MEMS layer can be seen between the cap and ASIC die.Source: http://memsblog.wordpress.com/2010/08/11/a-peak-inside-the-invensense-itg-3200-three-axis-gyroscope/
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Invensense MEMS Device
Fusion Bond
Eutectic Bond
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Eutectics applied in Wafer Bonding
• Popular Eutectic Bonding Schemes (incl. Bond Temperature)(sorted by downward bonding temperature) – Al-Si (~600°C)– Al-Ge (~450°C)– AlCu-Ge (~400°C)– Au-Si (~400°C)– Au-Sn (~300°C)– Au-In (~275°C)– Cu-Sn (~270°C)– Pb-Sn (~190°)– In-Sn (~120°C)
EVG experience
Courtesy of Invensense
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Al-Ge Eutectic Wafer Bonding
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Al-Ge Bonding - Main Process Features
Both Al and Ge surfaces are covered with very stable, hard-to-strip native oxides when exposed to ambient.
Due to its high temperature, process time has to be short when using CMOS wafers.
The oxide layers must be mechanically broken. For this, the process is using high force.
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Al – Ge Bonding
Al-Ge Eutectic• Eutectic Temperature 420°C• Bonding Temperature ~ 450°C
• Bonding Force: Pattern dependant. 30 to 60kN for 200mm wafers.
• Optimized thermal profile required for repeatable good bonding results.
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Cu-Sn TLP Bonding - Background
- Parent Metal is deposited on both wafers.
- Deposition method may be sputtering, evaporation or electroplating
- Low melting point interlayer may be deposited on one or both of the wafers.
- Layer thicknesses have to be optimized to ensure process performance
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Cu-Sn TLP Bonding - Background
- Wafers are loaded into bond chamber
- Optionally oxide removal process may be performed
- Oxide issue may also be countered by mechanically breaking native oxide of metal layers due to applied force.
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Cu-Sn TLP Bonding - Background
- Wafers are heated according to recipe parameters
- Low melting point interlayer starts already to diffuse into parent metal.
- Heating ramp rate has to be reasonably fast to avoid consumption of the entire low melting point interlayer prior to reaching liquid phase
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Cu-Sn TLP Bonding - Background
- Heating of wafers above melting point
- Low melting point interlayer will melt and at this stage gaps in the interface may be closed.
- In this phase, also some wafer topography may be compensated
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Cu-Sn TLP Bonding - Background
- Liquid low melting point interlayer will react with parent metal and form intermetallic compounds
- Reaction into IMCs results in solidification of the bond interface
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Cu-Sn TLP Bonding - Background
- During further time at temperature, the bond metal interconnect homogenizes into a uniform distribution of IMCs and parent metal.
- For some process and / or material sets, the metal stack may homogenize to a condition where the majority of the metal stack is comprised of parent metal with some IMCs dissolved in the parent metal.
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Cu-Sn TLP – Results
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Metal Based Wafer Bonding Processes TLP (Transient Liquid Phase) BondingSome work done at EV Group regarding Cu-Sn TLP Bonding
A B C D E
1
2
3
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Advantages of TLP Bonding • More relaxed surface quality requirements than
metal diffusion bonding schemes• Capability to tolerate some surface topography • Low bonding temperature (taking advantage of the low
melting point of the “low melting point interlayer”) • High service temperature of the bond interface once the
bonding process is completed (non-reversible bond) • Low bonding force (i.e. when compared with metal
diffusion bonding) required due to the liquid phase present during the bond.
• Less flow of material in the bond interface as compared with regular eutectic bonding
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Low Temperature Oxide Bonding with Plasma Activation• Plasma Activation enables the formation of
strong oxide-oxide bonds at low temperature• Oxide bonds are front end compatible
– Highly clean, no contamination risk– High temperature stable – No risk of metals diffusion – Known etching processes– Simple process integration – Oxide is well known and understood as sacrificial
material
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General Process Flow
Plasma activation; Device and carrier (EVG810LT plasma activation equipment):
Megasonic cleaning (EVG3xx series single wafer cleaner):
Wafers were cleaned for particles removal using a megasonic nozzle and deionized water.
Fusion bonding
Bond front initiated e.g. at the wafer center.
Annealing (furnace): x h at yyy °C.
Carrier
Device
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Bond Strength Development for Plasma Activated Bonding
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EV Group Confidential and Proprietary
Microroughness Analysis: RMS
TABLE I. Surface Microroughness Comparison
Surface Orientation and Plasma Type
RMS Before Plasma RMS After Plasma
(100) – N2 0.2254 ± 0.0017nm 0.1922 ± 0.0063nm
(110) – N2 0.0979 ± 0.0073nm 0.0886 ± 0.0015nm
(111) – N2 0.0862 ± 0.0069nm 0.1009 ± 0.0078nm
(100) – O2 0.2502 ± 0.0089nm 0.2200 ± 0.0048nm
(110) – O2 0.0956 ± 0.0039nm 0.0956 ± 0.0057nm
(111) – O2 0.0712 ± 0.0023nm 0.0949 ± 0.0038nm
Silicon wafer withoutplasma treatment
Silicon wafer afterN2 plasma treatment
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TEM Analysis – Fusion Bond Interface
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No boundary line could be found at the interface between the two types of oxides.
TEM Analysis – Fusion Bond Interface
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Summary & Conclusions • Metal based bonding schemes and direct bonding
(oxide-oxide bonding) are gaining traction as the method of choice for high volume manufacturing of MEMS devices for mobile applications.
• Eutectic bonding enables the formation of hermetic bonding interfaces with low line widths, good alignment precision at CMOS compatible bonding temperatures
• Plasma activated fusion bonding enables the formation of permanent bonding interfaces with good hermeticity at low temperatures.
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EVG Value Proposition • Industry standard for wafer bonding equipment for
high volume manufacturing of MEMS devices with a dominant market share.
• Strong process expertise for all types of wafer bonding processes, including eutectic bonding and plasma activated fusion bonding.
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Thank you for your attention!
Data, design and specifications may not simultaneously apply; or depend on individual equipment configuration,process conditions and materials and may vary accordingly. EVG reserves the right to change data, design andspecifications without prior notice.
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