Wafer-Based Metrology · 2018-11-21 · Fast, Precise Wafer-based Metrology for Processes Across...
Transcript of Wafer-Based Metrology · 2018-11-21 · Fast, Precise Wafer-based Metrology for Processes Across...
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Wafer-Based Metrology
Thierry Dupraz
KLA-Tencor, SensArray European Business Manager
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2
Process Matching and Monitoring is Critical More Than Ever
Throttle valve, Manometer
MFC, Rate of rise
MFC, Manometer
ESC temperature probe
Liquid flow, bath temp
Liquid flow, bath temp
Power
RF Gen, in line probe
RF Gen, in line probe
Process
Tool Knobs
Pressure
Gas 1
Gas 2
Gas 3
He Pressure
Temperature
ESC
Wall
Lid
Power
Source
Bias
Process Tool Metrology
Time Based
Responses
SensorWafer™ Metrology
Spatial
Responses
Better understand what’s happening at wafer level through spatial and time based information
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SensArray® PortfolioProcesses
EPI
ALD
PVD/CVD
STRIP
TRACK
IMPLANT
OXIDATION
DIFFUSION
POLY ETCH
OXIDE ETCH
DEPOSITION
LITHOGRAPHY
ESC CAL
PROCESS OPTIMIZATION
TROUBLESHOOTING
PROCESSMONITORING
CHAMBERMATCHING
TOOLINSTALLATION
POST PM
Use Cases
IN-SITUMEASUREMENT
HighTemp
ScannerTemp
UV Wafer
Integrated Wafer™(2019 ready)
Vibration Wafer
Epi Wafer (in development)
MaskTemp
EtchTemp
WetTemp
EUV Wafer(in development)
Wired Wafer
Automation compatible
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Wafer-based Metrology for Etch
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3D Structure Process DevelopmentTemperature sensitivity
Yield ImprovementAging ESC impacts yield
Wireless Wafer-based Temperature MetrologyFor etcher & etch process development, matching and monitor
Chamber MatchingBaseline and Routine Monitor
HAR Bending Process Issue
Temperature impact
FinFET
3D NAND
Process CorrelationThermal sensitivity
Temperature to CD correlation to Si recess correlation
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Signature Development with Plasma ON
No signature
apparent
STEP 3
STEP 5
STEP
6+7 STEP 8
Qualify your chamber with a Plasma ON recipe
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Wafer-based Metrology for Litho
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MonitoringTemperature
MeasurementTrack
Integrated Wafer: Classic PEB Control Use CaseTemperature Monitoring of Litho Track Uniformity & Stability
• Monitor PEB temperature using an Integrated SensorWafer
• AutoCal and AutoCD software for hotplate optimization
• Analyze and diagnose failures
Temp CalibrationPlate Offsets
CDU CalibrationPlate Offsets
Process Monitoring Cycle- “In Control”
Corrective Action Loop
Go No Go
Accuracy: +/- 0.1°C
Range: 15 - 145°C
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Qualify Your Litho Track, Saving Tool and Resources Time
▪ Full track flow profile
▪ Takes only minutes to get to the data
▪ 6 to 10x faster than a wired solution
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Process: CDU Improvement
• Hotspot detection: fast troubleshooting of temperature signature
• Flag out-of-control temperature mean & range
• Temperature uniformity signature improve CDU (100% coverage with up to 65 sensors)
Hotplate Steady State Analysis
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POST EXPOSURE BAKE
EXPOSE RESISTE-BEAM
DEVELOP PATTERN
ETCH PATTERN
REMOVE PHOTORESIST
SOFT BAKE
QUARTZ PHOTORESIST
PLATE
ΔX⁰C = YnmCD variation Post Exposure Bake FlowChamber Matching
Mission Delta
Chamber Matching Pass or Fail
In-Situ CD Control with SensArray MaskTemp
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Wafer-based Metrology for Deposition
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Hotplate AutoCal: 10-40% uniformity improvement
Yield Improvement:With <1% temperature reduction
Process Characterization:Direct correlation to ALD TiN thickness and R
HighTemp Use Case ALD, PVD, CVD and BARC Bake Processes
Temp 2D
MapThickness 2D Resistivity 2D
Chamber Matching:Baseline and monitor
Chamber A Chamber B Chamber DChamber C
X
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Heater Performance Monitor Use Case PVD
Customer issue:
• Yield impact due to film thickness and quality drift
Solution:
• HighTemp identified root cause in tool heater drift over time
• HighTemp highlighted process ramp difference that impacted film quality and thickness
Recommendation:
• Use HighTemp for process monitoring using trace comparison
Recipe length (sec)
Te
mp
era
ture
Same recipe, same chamber temperature curve over time
One month
process ramp drift
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Wafer-based Metrology -Other Than Temperature
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Characterize Chamber Uniformity, Ramping & MatchingTemperature, UV Intensity at Wafer
Process Parameters Spatial and Temporal Resolved
Temperature HighTemp EtchTemp20-400°C 20-140°C
Low-K Dielectric
CuringUV intensity
UV Wafer (200-400nm)20-400°C
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Characterize Chamber other than TemperaturePower Delivered, Neutral Density, UV Radiation at Wafer
Optical window
Plasma
+e
R
Process Parameters Spatial and Temporal Resolved
PlasmaPower on Wafer
Ion Flux
HeatFlux Wafer
Neutrals Density(OES Intensity)
Spectra Wafer
Temperature EtchTemp; EtchTemp-SE
Low-K Dielectric Curing UV Intensity
UV Wafer
Thermal insulating layer
Bottom temperature sensor
Top temperature sensor
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Automated Solutions For Fab Efficiency
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Out of spec Out of spec
3. Process correction
2. SA chamber matching result
1. Collect SA Automation data
Source: AMAT Producer website
All are matched
4. Process optimized
SensArray AutomationFaster Chamber Matching, Process Optimization Feedback Loop
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ConclusionFast, Precise Wafer-based Metrology for Processes Across the Fab
• Understand and manage process window
• Time-resolved temperature map on wafer from 20-400°C under process condition
• Time-resolved power and neutral distribution on wafer with plasma on
• >5x lower time than using test wafers for
• Chamber calibration, qualification, monitor
• Chamber matching
• Optimization of thermal, power & neutral uniformity
• Precise and efficient tool for
• Installation, PM
• Monitor & control
• Process development, troubleshooting
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Thank you!
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