VNR VIGNANA JYOTHI INSTITUTE OF ENGINEERING & … · DEPARTMENT OF ELECTRONICS AND INSTRUMENTATION...
Transcript of VNR VIGNANA JYOTHI INSTITUTE OF ENGINEERING & … · DEPARTMENT OF ELECTRONICS AND INSTRUMENTATION...
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VNR VIGNANA JYOTHI INSTITUTE OF ENGINEERING & TECHNOLOGY
(Autonomous)
DEPARTMENT OF ELECTRONICS AND INSTRUMENTATION ENGINEERING
II B. Tech, Ist Semester (Electronic and Instrumentation Engineering)
Subject : Electronic Devices and Circuits
Subject Code : 15ECE001
Academic Year : 2016 – 17
Number of working days : 90
Number of Hours / week : 4 + 1
Total number of periods planned: 58
Name of the Faculty Member: Mr. S.Pranavanand.
Course Objectives:
To learn principle of operation, construction and characteristics of various electronic
devices.
To know about different applications of these devices
To provide the concepts involved in design of Electronic Circuits
Course Outcomes (COs): Upon completion of this course, students should be able to:
CO-1: Use devices in real life applications
CO-2: Design small signal model for BJT, FET.
CO-3: Analyse and Design a few applications using these devices
CO-4: Design and construct a simple DC power supply.
UNIT : I
Syllabus:
P-N Junction Diode and Applications
Review of Semi Conductor Materials, Theory of p-n Junction, p-n Junction as a Diode, Diode
Equation, Volt-Ampere Characteristics, Temperature dependence of VI characteristic, Ideal
versus Practical diode Equivalent circuits, Static and Dynamic Resistance levels, Transition
and Diffusion Capacitances, The p-n Junction diode as a rectifier, Half wave Rectifier, Full
wave rectifier, Bridge Rectifier, Harmonic components in a Rectifier Circuit, Inductor filters,
Capacitor filters, LC Section Filters, - section filters, Comparison of Regulation
Characteristics of different Filters, Breakdown Mechanisms in Semi Conductor Diodes,
Zener Diode Characteristics, Shunt Voltage Regulation using Zener Diode.
Learning Objectives: After completion of the unit, the student must able to:
Draw and explain the energy band diagram of intrinsic semiconductor.
Define drift current and diffusion current
Define mobility of charged particle
Derive an expression for the conductivity of a semiconductor.
Describe extrinsic semiconductor
What is doping and why is it required.
Explain the formation of n type semiconductor
Explain conductivity of n type semiconductor
Explain the formation of p type semiconductor
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Explain conductivity of p type semiconductor
Draw and explain the energy band diagram of extrinsic semiconductor
Give an expression for the conductivity of p type and n type semiconductor
State and explain Law of mass action
Explain carrier concentrations in extrinsic semiconductor
Explain pn junction diode
Derive expression for junction potential.
Explain forward bias and reverse bias
Explain the V-I characteristics of forward biased pn junction diode
Explain the V-I characteristics of reverse biased pn junction diode
Explain the effect of temperature on V-I characteristics of pn junction diode
Explain the energy band diagram of open circuited diode.
Define static resistance, dynamic resistance and bulk resistance of a diode.
Define reverse saturation current and reverse breakdown voltage of a diode.
Derive current equation of diode.
Explain the current components of a diode
State and explain continuity equation
Define transition capacitance and diffusion capacitance of a diode.
Distinguish the features of Si and Ge diodes
Explain the function of rectifier
Explain half wave rectifier and full wave rectifier
Explain the advantages of full wave rectifier over half wave rectifier
Explain the advantage of bridge rectifier
Define and derive Ripple factor, % regulation, efficiency of HWR
Define and derive Ripple factor, % regulation, efficiency of FWR
Explain how harmonic components are rectified with L filter, Derive ripple factor.
Explain how harmonic components are rectified with C filter, Derive ripple factor.
Explain how harmonic components are rectified with LC or L section filter, Derive
ripple factor.
Explain how harmonic components are rectified with π section filter, Derive ripple
factor.
Explain multiple L section and π section filters
Compare the ripple factors of a rectifier with different filters.
Explain avelanche and zener breakdown mechanisms.
Explain the V-I characteristics of zener diode
Define different zener diode parameters.
Explain Zener diode as a Regulator.
Compare the performances of different types of filters.
Lecture Plan
S.No. Description of Topic No. of Hrs. Method of Teaching
1. Intrinsic, extrinsic semiconductors, p type and
n type semiconductors
1st hour PPT + Video
2. Drift current, diffusion current, mobility,
conductivity of extrinsic semiconductors
2nd
hour Black board + Video
3. PN-junction diode FB, RB Characteristics &
junction Potential.
3rd
hour Black board
4. Continuity equation, Current components and
diode current equation.
4th
hour Black board + Video
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5. Temperature dependency of VI characteristics
5th
hour Black board
6. Diode parameters, specifications, equivalent
circuits, problems on pn diode
6th
hour Black board + PPT
7. Introduction to Rectifiers, Half wave rectifier
circuits, operation.
7th
hour Black board + Video
8. Full wave rectifier, circuits, operation. Bridge
rectifier
8th
hour Black board
9. Performance Parameters (Regulation, Ripple
factor, efficiency etc.) Derivations of HWR
9th
hour Black board + Video
10. Performance Parameters (Regulation, Ripple
factor, efficiency etc.) Derivations of FWR
and bridge rectifier.
10th
hour Black board
11. Problems on Performance Parameters 11th
hour Black board
12. Introduction to filters, Capacitor filters
explanation, Derivations
12th
hour Black board + Video
13. L filter, explanation, derivations 13th
hour Black board + Video
14. L-section filters, ∏- section filters 14th
hour Black board + Video
15. Multiple L-section & ∏- section filters
,Comparison
15th
hour Black board + Video
16. Problems on Rectifiers and Filters 16th
hour Black board + Video
17. Break down mechanism in diodes, Zener
diode characteristics
17th
hour Black board + Video
18. Shunt Voltage Regulators, Regulator using
Zener diode ,Series Voltage Regulator
18th
hour Black board + Video
Assignment – 1
1. What is a rectifier? Define Ripple Factor, PIV, efficiency TuF, form factor of a
Rectifier.
2. Define the value of forward current in case of Si junction diode with I0 = 10µA, Vf
= 0.8v at T = 3000k.
3. A Si diode has a reverse saturation current of 7.5µA at room temperature 3000K
.Calculate the reverse saturation current at 4000k.
4. The voltage across a silicon diode at room temperature (300ok) is 0.7 volts when
2mA current flows through it. If the voltage increases to 0.75V calculate the
diode current
5. What is the ratio of current for a forward bias of 0.08V to the current for the same
magnitude of reverse bias for the Germanium diode.
6. The transition capacitance of an abrupt junction diode is 30pf at 8V
Determine the value of Capacitance for an increase in the bias
voltage of 2 V.
7. Find the value of dc resistance and ac resistance of a Ge junction diode at 25 0C, I0
= 10μA and applied voltage is 0.1 V.
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8. Calculate the Dynamic forward and reverse resistance of a PN junction diode
when the applied voltage is 0.2 V, I0 =2 μA and T= 25 0C. Consider Ge diode.
9. A Half wave rectifier circuit feeds a resistive load of 10KΩ through a power
transformer having a step down turns ratio of 8:1 and operated from 230V, 50Hzs
ac mains supply. Assume the forward resistance of a diode to be 40Ω and
transformer secondary winding resistance as 12Ω. Calculate the maximum, RMS
and average values of current ,DC output voltage and power ,efficiency of
rectification and ripple factor.
10. A full wave rectifier circuit is fed from a transformer having centre tapped
secondary winding .The rms voltage from either end of secondary tap to centre is
20V.If the diode forward resistance is 3Ω and that of secondary is 5Ω,for a load
of 1KΩ,calculate
a. power delivered to load
b. % regulation at full load
c. efficiency at full load
d. TUF of secondary.
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UNIT : II
Syllabus:
Transistors, Biasing and Stabilization
The Bipolar Junction Transistor, Transistor Current Components, Transistor construction,
BJT operation, Common Base, Common Emitter and Common Collector Configurations,
Limits of operation, transistor as an Amplifier, BJT specifications, Principle of series voltage
regulators. The DC and AC Load lines, Quiescent operating Point, Need for Biasing, Fixed
Bias, Collector Feedback Bias, Emitter Feedback Bias, Collector-Emitter Feedback Bias,
Voltage Divider Bias, Bias Stability, Stabilization Factors, Stabilization against variations in
VBE, β1 and ICO. Bias Compensation using Diodes, Thermistors and sensistors, Thermal
Runway, Thermal Stability.
Learning Objectives: After completion of the unit, the student must able to:
Explain the principle of operation of transistor (pnp and npn)
Explain the basic techniques used for the construction of transistor (grown type,
micro alloy type, electrochemically etched type, diffusion type, epitaxial growth
type)
Explain the effect of temperature on transistor characteristics
Draw the symbols and different configurations of transistor
Draw and explain the input and output characteristics of common emitter
configuration.
Draw and explain the input and output characteristics of common base configuration
Draw and explain the input and output characteristics of common collector
configuration
Identify active ,cutoff and saturation regions on out put characteristics
Derive expression for collector current in CE configuration.
Explain why CE provides large current amplification while CB can not.
Explain why CE configuration is most widely used.
Define current gain, voltage gain, input impedance and output impedance.
Define αdc and βdc .Derive relationship between αdc and βdc
Calculate αdc and βdc, if base current and collector current are given.
Explain Early effect.
Explain Punch through effect
List out the applications of BJT
Explain the significance of Q point
What are the factors that affect the stability of an amplifier.
Define the three stability factors and explain their significance in BJT
List out different techniques used for biasing transistor amplifiers
Define and derive the expressions for stability factors S,S’,S”
Explain the fixed bias circuit and derive expression for stability factor S
Explain the collector feedback bias circuit and derive expression for stability factor
S
Explain Collector to base bias circuit and derive expression for stability factor S
Explain the collector-emitter feedback bias circuit and derive expression for stability
factor S
Explain voltage divider bias or emitter bias circuit and derive expression for stability
factor S
Explain why emitter bias circuit provides more stability amongst the five types of
biasing methods
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What are the compensation techniques used for V be and I co
Explain diode compensation circuit, thermistor compensation and sensistor
compensation techniques
Explain what is Thermal runaway
State the condition for thermal stability
Lecture Plan S.No. Description of Topic No. of Hrs. Method of Teaching
1. Introduction to Bipolar junction transistor
(BJT), Construction of BJT, Transistor
operation (pnp and pnp)
19th
hour PPT + Video
2. Transistor current components, current
amplification Factor, Common base (CB),
common emitter (CE)and common collector
(CC) configurations
20th
hour Black board + Video
3. Common base configuration characteristics,
early effect, punch through.
21st hour Black board
4. Common emitter configuration
characteristics, active, cut-off and saturation
regions.
22nd
hour Black board + Video
5. Common collector configuration
characteristics.
23rd
hour Black board
6. Comparison of CB, CE, CC characteristics,
specifications, problems
24th
hour Black board + PPT
7. Transistor biasing, operating point, dc load
line, ac load line.
25th
hour Black board + Video
8. Fixed bias circuit & collector feedback bias
circuit- analysis, derivation of expression for
S.
26th
hour Black board
9. Collector base bias circuit and collector –
emitter feedback bias circuit-, analysis, S,
problems
27th
hour Black board + Video
10. Self bias or emitter bias circuit- analysis, S,
problems
28th
hour Black board
11. Problems on biasing circuits. 29th
hour Black board
12. Compensation techniques using diode,
thermistor and Sensistors
30th
hour Black board + Video
13. Thermal run away, Thermal stability, 31st hour Black board + Video
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Assignment - 2
1. Calculate the values of collector current and emitter current for a transistor with αdc=
0.99 and ICBO= 5 μA. The base current is measured as 20 μA.
2. The reverse leakage current of a transistor when connected in CB configuration is 0.2
μA while it is 18 μA when the same transistor is connected in CE configuration.
Calculate αdc and βdc.
3. The collector and base currents are measured as 5.202 ma and 50 μA respectively.ICB0
is measured as 2 μA. Calculate a) α, β and Ie b)new level of Ib to make Ic=10 mA.
4. An npn transistor, with β = 50 is used in common emitter circuit with
Vcc=10V,Rc=2KΩ.The bias is obtained by connecting 100KΩ resistor from collector
to base. Find quiescent operating point and stability factor. 5. Consider a self bias circuit ,where Vcc=22.5V, Re = 5.6kΩ, R1=90 kΩ, R2 = 10kΩ, and Re =
1 kΩ. hfe =55 and VBE = 0.6. The transistor operates in active region. Determine operating
point and stability factor S.
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UNIT III
Syllabus:
Small signal low frequency BJT Amplifiers
Small signal low frequency transistor amplifier circuits: h-parameter representation of a
transistor, Analysis of single stage transistor amplifiers CE, CC, CB configurations using
h-parameters: voltage gain, current gain, Input impedance and Output impedance.
Comparison of CB, CE, CC configurations in terms of AI, Ri, AV, RO.
Learning Objectives: After completion of the unit, the student must able to:
Define ‘ h parameters’ for a two port network
Draw the h parameter equivalent circuits for the three transistor configurations CE,
CB, CC.
Explain the operation of CE amplifier as an amplifier
Explain the need of C1, C2 and Ce in a single stage CE amplifier
Derive Ai, Av, Ri, R0 of a single stage CE amplifier
Give the general steps for the analysis of transistor amplifier
Derive Ai, Av, Ri, R0 of a single stage CB amplifier
Derive Ai, Av, Ri, R0 of a single stage CC amplifier
Compare CC, CE and CB with respect to Ri, Ro, Ai, Av.
Lecture Plan
S.No. Description of Topic No. of Hrs. Method of Teaching
1. Introduction two port network devises,
Hybrid model
32nd
hour PPT + Video
2. H-parameter-hi , hf, hr, ho
33rd
hour Black board + Video
3. Transistor hybrid model of CB, CC, CE
configurations
34th
hour Black board
4. Analysis of transistor amplifier (CE) using h-
parameters Ai , Zi Av, Y ,Avs, Ais.
35th
hour Black board + Video
5. Simplified CE analysis ,problems 36th
hour Black board
6. Analysis of CE amplifier with un bypassed
Re
37th
hour Black board + PPT
7. Analysis of CB amplifier. 38th
hour Black board + Video
8. Analysis of CC amplifier, problems.
39th
hour Black board
9. Comparison of CC, CB, CE amplifiers
characteristics
40th
hour Black board + Video
10. RC couple amplifier, frequency response
analysis(low frequency)
41st hour Black board
9
Assignment – 3
1. A common base amplifier has the following components: Rc = 5.6KΩ, RE = 5.6KΩ, RL =
39KΩ,RS = 600Ω. The transistor parameters are, hie = 1000Ω, hfe = 85, and hoe =2x10-6
mhos.
Calculate Av, Ri, Ro, Avs.
2. Consider a single stage CE amplifier with
Rs=1K,R1=1K,r2=2K,RL=1.2K,hfe=50,hie=1.1K,hoe=24microA/V and hre=2.5*10-4
3. calculate Ri,Ai=Il/Is,Av,Avs=Vo/Vs,Ro.
4. Calculate Ri,Ai=Il/Is,Av,Avs=Vo/Vs,Ro for the CB ckt with
R1=10K,Rs=1K,R2=10K,RL=20K.
For the CB ckt the transistor parameters are hib=22ohms,hfb=-0.98,hob=0.49microA
UNIT : IV
Syllabus:
FET, Biasing and Amplifiers
The Junction Field Effect Transistor (Construction, Principle of operation) –Voltage-Volt-
Ampere characteristics, FET as Voltage variable Resistor, Biasing FET, The JFET Small
Signal Model, FET common source Amplifier, Common Drain Amplifier, MOSFET
(Construction, Principle of operation), MOSFET Characteristics in Enhancement and
Depletion modes. Comparison of BJT and FET amplifiers.
Learning Objectives: After completion of the unit, the student must able to:
Explain why FET is called unipolar device
Explain why FET is called voltage-operated device
Classify FETs and give their application areas.
Explain construction of n channel JFET with neat diagram.
Explain construction of p channel JFET with neat diagram.
Explain the operation of n channel JFET
Explain the operation of p channel JFET
Draw the Static Characteristics of JFET and explain different portions of the
Characteristics.
Define Pinch Off Voltage.
Draw the Transfer Characteristics of JFET and explain different portions of the
Characteristics.
Define Rd, gm and μ of JFET.
Explain how Rd, gm can be calculated from Characteristic curves.
Explain how JFET can be used as Switch.
Explain how JFET can be used as Voltage Variable Resistor.
Explain how MOSFET differs from JFET.
Explain the constructional features of Depletion mode MOSFET and explain its basic
operation.
Explain the significance of Threshold Voltage VT in Depletion mode MOSFET
Draw and explain the drain Characteristics of Depletion mode MOSFET along with
different operating regions.
Explain the constructional features of Enhancement mode MOSFET and explain its
basic operation.
10
Draw and explain the drain Characteristics of n Channel Enhancement. Mode
MOSFET.
Sketch graphical Symbols for n-Channel JFET, p-Channel JFET, n-Channel
Enhancement mode MOSFET, p-Channel Enhancement mode MOSFET, n-
Channel Depletion mode MOSFET, and p-Channel Depletion mode MOSFET
Lecture Plan
S.No. Description of Topic No. of Hrs. Method of Teaching
1. FET introduction, construction operation
Drain and Transfer characteristics of n-
channel and p-channel FETs.
42nd
hour PPT + Video
2. Pinch off voltage, definitions of Rd, gm and μ
of JFET. Calculation from characteristic
curves.
43rd
hour Black board + Video
3. Small signal model of JFET, analysis of
Common source FET amplifier.
44th
hour Black board
4. Problems on JFET 45th
hour Black board + Video
5. Depletion MOSFET construction, symbol,
operation, characteristics,
46th
hour Black board
6. Enhanced MOSFET construction, symbol,
operation, characteristics
47th
hour Black board + PPT
7. Problems on MOSFET. 48th
hour Black board + Video
Assignment - 4
1. Explain the construction and operation of JFET.
2. Define Transconductance gm of a FET. Write the expression for gm.
3. Why a Field Effect Transistor is called so?
4. Draw the small signal model of FET.
5. Draw the diagram for the Basic Structure of Depletion mode and Enhancement mode
MOSFET.
UNIT : V
Syllabus:
Special Purpose Electronic Devices
Principle of Operation and Characteristics of Tunnel Diode (with the help of Energy Band
Diagram) Varactor Diode and Schotky barrier diode. Principle of Operation and
Characteristics of UJT, UJT Relaxation Oscillator. Principle of Operation of SCR, Schockley
diode Diac and Triac. Principle of Operation of Semiconductor Photo Diode, PIN Diode,
Photo Transistor, LED and LCD.
Learning Objectives: After completion of the unit, the student must able to:
Explain the principle of operation of Tunnel diode
Explain the V-I characteristics of Tunnel diode
Explain the applications of Tunnel diode.
Explain the principle of operation of Varactor diode
Explain the V-I characteristics of Varactor diode
11
Explain the applications of Varactor diode
Explain the principle of operation of Schotky barrier diode
Explain the V-I characteristics of Schotky diode
Explain the constructional details of UJT
What is intrinsic stand of ratio η
Draw and explain UJT VI characteristics
Draw the symbol and equivalent circuit of UJT
Explain how UJT can be used as negative resistance device with the aid of static
characteristics
List out the applications of UJT and explain UJT relaxation oscillator.
Explain the constructional details and operation of SCR, Diac and Triac.
Draw the characteristics of SCR and explain
Explain a) Holding current and b) Latching current
Explain a) Reverse break down voltage and b) Forward break over voltage
Explain two-transistor analogy of SCR
State the application of SCR
Explain which material is used for LED
Explain is photo emissive effect
Define radiant flux , irradiation , illumination, luminosity curve and light intensity
Explain the basic principle of operation of LED
Explain the constructional details of LED
State advantages and disadvantages of LED
Compare LED with normal PN diode
Sketch output characteristics of LED
Explain why LEDs are preferred in displays
Explain the VI characteristics of photo diode
State any two applications of photo diode and Photo Transistor.
Explain the principle of operation and working of LCD
Lecture Plan
S.No. Description of Topic No. of Hrs. Method of Teaching
1. Principle of Operation and Characteristics of
Tunnel Diode (with the help of Energy Band
Diagram)
49th
hour PPT + Video
2. Principle of operation of Varactor Diode and
its applications.
50th
hour Black board + Video
3. Principle of operation, characteristics and
applications of Schotky barrier diode
51st hour Black board
4. Principle of Operation and Characteristics of
UJT, UJT Relaxation Oscillator
52nd
hour Black board + Video
5. Principle of Operation, characteristics and
applications of SCR, Diac and Triac.
53rd
hour Black board
6. Principle of Operation, characteristics and
applications of Diac and Triac
54th
hour Black board + PPT
7. Principle of Operation, characteristics
and applications PIN Diode
55th
hour Black board + Video
12
8. Principle of Operation and applications of
Semiconductor Photo Diode and Photo
Transistor.
56th
hour
9. Principle of Operation and applications of
LED
57th
hour
10. Principle of Operation and applications of and
LCD
58th
hour
Assignment - 5
1. Define Negative resistance region, peak point and valley point in Tunnel diode
characteristics.
2. Describe the two transistor analogy of SCR.
3. Describe the construction and equivalent circuit of UJT.
4. Explain the principle of operation of photo diode and photo transistor.
5. Describe the principle of operation of LCD.
TEXT BOOKS
1. Electronic Devices and Circuits – J.Millman, C.C.Halkias, and Satyabratha Jit, Tata
McGraw Hill, 2nd
Edition, 2007.
2. Electronic Devices and Circuits – R.L. Boylestad and Louis Nashelsky,
Pearson/Prentice Hall, 11th
Edition, 2006.
3. Electronic Devices and Circuits – David A Bell, Oxford University Press,5th
edition
(2008)
REFERENCES
1. Integrated Electronics - J.Millman and Christos.C.Halkias, and Satyabratha, Jit Tata
McGraw Hill, 2nd
Edition, 2008.
2. Electronic Devices and Circuits – T.F. Bogart Jr., J.S.Beasley and G.Rico, Pearson
Education, 6th Edition, 2004.
3. Electronic Devices and Circuits- S. S Salivahanan, N. Sursh Kumar, A. Vallava
Raju,2nd
Edition., TMH, 2010.
13
VNR VIGNANA JYOTHI INSTITUTE OF ENGINEERING & TECHNOLOGY
DEPARTMENT OF CIVIL ENGINEERING
II B. Tech, Semester I (Electronics and Instrumentation Engg)
Subject : Electronic Measurements
Subject Code : 13EIE003
Academic Year : 2016 – 17
Number of working days : 90
Number of Hours / week : 5
Total number of periods planned: 60
Name of the Faculty Member: D.V.Shobhana Priscilla
II Year B. Tech EIE – I Sem L T/P/D C
4 1 4
(R13EIE003) ELECTRONIC MEASUREMENTS
UNIT – I
Introduction to measurements. Physical measurements. Forms and methods of
measurements. Static and Dynamic characteristics of measurement systems, Measurement
errors, Statistical analysis of measurement data.Probability of errors. Limiting
errors.Standards and Calibration : Definitions of standard units. International standards.
Primary standards.Secondary standards. Working standards. Voltage standard. Resistance
standard.Current standard. Capacitance standard. Time and frequency standards.Testing and
calibration. Traceability. Measurement reliability. Calibration
experiment and evaluation of results. Primary calibration. Secondary calibration. Direct
calibration. Indirect calibration. Routine calibration. Calibration of a voltmeter, ammeter
and an oscilloscope: case study. Learning objectives :
At the end of completion of all learning activities the student is able to
Define measurement.
Distinguish between accuracy and precision.
Explain measurement term tolerance.
Explain measurement term resolution.
Explain the significance of the number of significant figures in a stated quantity.
Distinguish between direct and indirect measurements.
Explain gross errors and systematic errors. Give example of each.
Define absolute errors and relative errors.
Describe standards and their classification
Describe the international standards of mass and length.
Explain primary standards
Explain secondary standards
Explain working standards
Explain atomic standards for frequency and time? Explain their advantages.
Explain voltage standards
Explain current standards Lecture plan :
S.No. Description of Topic No. of
Hrs.
Method of
Teaching
14
1. Introduction to measurements.Physical Measurements. 1 PPT+Video
2. Static and Dynamic characteristics of measurement
systems,
2 PPT+Video
3. Measurement errors, Statistical analysis of measurement
data.Probability of errors.
1 PPT
4. Limiting errors.Standards and Calibration : Definitions of
standard units
1 PPT
5. International standards. Primary standards.Secondary
standards. Working standards. Voltage standard.
2 PPT, chalk &
board
6. Resistance standard.Current standard. Capacitance
standard. Time and frequency standards.
1 PPT, Chalk &
board
7 Testing and calibration. Traceability. Measurement
reliability. Calibration
experiment and evaluation of results. Primary calibration.
Secondary calibration.
2 PPT, Chalk &
board
8 Direct
calibration. Indirect calibration. Routine calibration.
Calibration of a voltmeter, ammeter
and an oscilloscope: case study.
1 Chalk & board
Total = 11
UNIT – II
Voltage and current measurement: DC & AC voltage measurements using rectifiers,
thermocouple & electronic voltmeter, ohm meter, digital voltmeters, range extension of
ammeter and voltmeter.
Frequency Counters: Basic Principle, errors associated with counter, Different modes of
operations: Frequency, Time, Time Period, Average Time Period, Totalizing, Frequency
Synthesizer, Wave meters, Wave Analysers, Output Power Meter.
Learning objectives:
At the end of completion of all learning activities the student is able to
Sketch the construction of a permanent –magnet moving coil (PMMC) instrument
and explain its operation.
Show how PPMC instrument are used as galvanometers dc ammeter, ac voltmeter, ac
ammeters and ac voltmeters.
Calculate the series and shunt resistance values for given ammeter and voltmeter
ranged and determine instrument accuracy.
Explain in detail the working of stair case ramp DVM, giving the block diagram.
Compare the performance of different types of voltmeter.
How do you perform all- electronic capacitance measurements where the
measurement is not performed by a comparison? Explain the methods.
Explain AC rectifier type of measuring instruments.
Explain the working of electronic voltmeter
S.No. Description of Topic No.
of
Hrs.
Method of
Teaching
15
1. Voltage and current measurement: Introduction 1 PPT+Video
2. DC & AC voltage measurements using rectifiers,
2 PPT
3. thermocouple & electronic voltmeter ,ohm meter- Series
and Shunt.
1 PPT
4. digital voltmeters. 1 PPT+ chalk
&board
5 range extension of ammeter and voltmeter. Frequency
Counters: Basic Principle, errors associated with counter,
Different modes of operations: Frequency
3 PPT, chalk &
board
6 Time, Time Period, Average Time Period, Totalizing 2 PPT, Chalk
& board
7 Frequency Synthesizer, Wave meters, Wave Analysers,
Output Power Meter.
3 Chalk &
board
Total = 13
UNIT – III
Bridges: AC bridges measurement of inductance, Maxwell’s bridge, Anderson bridges,
measurement of capacitance, Schering Bridge, measurement of impedance- Kelvin
bridges, wheat stone bridges, HF bridges, problems of shielding, and grounding, Qmeter.
Learning objectives:
At the end of completion of all learning activities the student is able to
Sketch the circuit diagram of wheat stone bridge, explain its operation and derive the
balance equation.
Explain the Maxwell’s bridge.
Explain the Schering Bridge.
Explain the Kelvin’s bridge used for the measurement of impedance.
Explain Q-meter.
Explain HF bridge.
define dissipation factor
define power factor
Lecture plan:
S.No.
Description of Topic No. of
Hrs.
Method of
Teaching
1 Bridges: AC bridges measurement of inductance 2 PPT+Video
2 Maxwell’s bridge, Anderson bridges + Phasor
Diagram.
3 PPT
3 Measurement of capacitance: Schering Bridge 1 PPT
4 measurement of impedance- Kelvin
bridges , Kelvin Double Bridge.
1 PPT+ chalk
&board
16
5 wheat stone bridges- Measurement of sensitivity of
Bridge.
1 PPT, chalk
& board
6 HF bridges- Wien Bridge. Problems of shielding, and
grounding
2 PPT
7 Qmeter.
1 Chalk &
board
Total = 11
UNIT – IV
Oscilloscope: CRO operation, CRT characteristic probes, time base sweep modes, trigger
generator, vertical amplifier, modes of operations, A,B, alternate and chop modes,
sampling oscilloscopes, storage oscilloscope, standard specification of CRO,
Synchronous selector circuits. Spectrum analyzers, different types of spectrum analyzer,
Recorders
Display devices and display systems, logic analyzer – state time and referenced data capture,
scalar and vector network analyzers.
Learning objectives :
After completion of the unit, the students will be able to
Sketch the basic construction of cathode ray tube and explain its operation.
Explain the basic circuit diagram of an oscilloscope.
Explain the time base operation of automatic oscilloscope.
Explain the operation of dual trace oscilloscope.
Show how waveform applied to vertical deflecting plates of CRT.
Explain the modes of operation in CRO
Discuss typical oscilloscope specifications.
Explain storage and sampling oscilloscope
Lecture plan :
S.No. Description of Topic No. of Hrs. Method of
Teaching
1 Oscilloscope: CRO operation, CRT characteristic
probes
2 PPT+Video
2 time base sweep modes, trigger
generator, vertical amplifier, modes of operations,
A,B, alternate and chop modes,
2 PPT
3 sampling oscilloscopes, storage oscilloscope,
standard specification of CRO
2 PPT
4 Synchronous selector circuits. Spectrum analyzers, 1 PPT+ chalk
&board
5 different types of spectrum analyzer. 1 PPT,
6 Recorders
Display devices and display systems.
3 PPT, Chalk
& board
7 logic analyzer – state time and referenced data
capture, scalar and vector network analyzers.
2 Chalk &
board
17
Total = 13
UNIT – V
Smart measuring devices: smart sensor systems, smart sensors definitions, characteristics,
architectures, buses and interfaces, smart sensors for electrical and non-electrical variables:
pressure and temperature. Standards for smart sensors.
Learning objectives :
After completion of the unit, the students will be able to:
Explain the principle of smart sensors and different types of it.
Explain the architecture, buses and interfaces used for smart sensing devices.
Explain the different type of smart sensors for electrical variables
Explain the different type of smart sensors for electrical variables
Explain standards for smart sensors.
Lecture plan :
S.No. Description of Topic No. of Hrs. Method of
Teaching
1. smart sensor systems, smart sensors definitions
2 PPT
2. architectures
2 PPT
3. buses and interfaces
2 PPT
4. smart sensors for electrical variables.
2 PPT+ chalk
&board
5. Pressure sensors
2 PPT, Video
6 Temperature sensors,
standards for smart sensors.
2 Chalk &
board
Total = 12
TEXT BOOKS
1. Electronic Instrumentation – HS Kalsi, Tata Mc Graw Hill, 2004.
2. M Chidambaram, Computer control of processes, Narosa Publications (2002).
3. Smart Material Systems and MEMS: Design and Development Methodologies By Vijay K.
Varadan, K. J. Vinoy, S. Gopalakrishnan ,Wiley Publications(2006).
REFERENCE BOOKS
1. Principles of measurement systems, John P. Bentley: 3rd edition, Addison Wesley
Longman, 2000.
2. Measuring Systems, Application and Design: E.O. Doebelin, McGraw Hill.
3. Electrical and Electronic Measurements: Shawney, Khanna Publ.
18
4. Electronic Instrumentation and measurements techniques by Helfrick and
W.D.Cooper.,PHI publications.
Practice: Subject practice through EDA tools.
19
VNR VIGNAN JYOTHI INSTIYUTE OF ENGINEERING AND TECHNOLOGY
BACHUPALLY (VIA), KUKATPALLY, HYDERABAD-72
ACADEMIC PLAN: 2016-17
II Year B. Tech EIE – I Sem L T/P/D C
4 0 4
Subject: PRINCIPLES OF ELECTRICAL ENGINEERING Subject Code:
13EEE077
Number of working days : 90
Number of Hours / week : 5
Total number of periods planned : 60
Name of the Faculty Member : R. Sireesha
.
PREREQUISITES
13MTH001, 13MTH002, 13MTH005, 13PHY003, 13EEE001.
COURSE OBJECTIVES
1. To analyze transient response of circuits with dc excitation.
2. To understand two port network parameters, filters and attenuators.
3. To know about performance of DC machines.
4. To understand the operation of transformers and AC machines.
COURSE OUTCOMES
Upon completion of the syllabus student will be able to
1. Analyze transient response of circuits Evaluate two port parameters and design simple
filters.
2. Appreciate the working of DC machines.
3. Understand the operation of transformers and AC machines.
MAPPING OF COs WITH POs
PO a PO b PO c PO d PO e PO
f PO g PO h
PO
i
PO
j PO k
PO
l
CO 1 3
2 2
2 2
3
CO 2
3 2 1 2 1
2 2
CO 3
2 2 1 1 2 2 2 2 1 2 3
3-storng 2-moderate 1-Week Blank-Not relevant
DETAILED SYLLABUS
UNIT- I
Transient Analysis (First and Second Order Circuits) :
Transient Response of RL, RC and RLC Circuits for DC excitations, Initial Conditions,
Solution using Differential Equations approach and Laplace Transform Method.
Learning Outcomes
20
After completion of this unit the student will be able to
1. Define Transient.
2. Describe Initial conditions of Basic R, L, C elements.
3. Derive equations for transient Response of RL circuit.
4. Derive equations for transient Response of RC circuit.
5. Derive equations for transient Response of Series RLC circuit.
6. Solution of above transient Responses using Differential Equations approach and Laplace
Transform Method.
TEACHING PLAN
S. No Description No. of
Periods (16)
Mode of delivery
1 Introduction Transients 01 BBT
2 Transient Response of RL, RC and RLC Circuits
for DC excitations
06 BBT+
https://www.yout
ube.com/watch?v
=oPwsrq29w18
3 Initial Conditions 01 BBT
4 Solution using Differential Equations approach
and Laplace Transform Method.
06 BBT
5 Assignment Questions Discussion 01 Assignment Sheet
6 Tutorial 01 Tutorial sheet
Tutorial
1. (a) what is the impartance of time constant of R-L circuit.what are the different ways
of
defing timeconstant.
(b).what is the initial condition of a circuit? Why do you need them?
2. (a) Derive the expression for transient response of R-L-C series circuit with unit step
input?
(b).Explain why the current in a pure inductance can not change in zero time.
Assignment (1) Find i (t) for t > 0 for the circuit shown in Fig When the switch is opened at t = 0
21
(2) Determine i (t) for the circuit shown in Fig When the switch is closed at t = 0.Assume
initial current through inductor is zero
UNIT-II
Two Port Networks : Impedance Parameters, Admittance Parameters, Hybrid Parameters, Transmission (ABCD)
Parameters, Conversion of one Parameter to another, Conditions for Reciprocity and
Symmetry, Interconnection of Two Port networks in Series, Parallel and Cascaded
configurations, Image Parameters, Illustrative problems.
Learning Outcomes After completion of this unit the student will be able to
1. Define port, one port network, Two port network. 2. Define various types of parameters of Two port network. 3. Derive expressions for individual Z-parameters of Two port network. 4. Derive expressions for individual Y-parameters of Two port network. 5. Derive expressions for individual ABCD-parameters of Two port network. 6. Derive expressions for individual h-parameters of Two port network. 7. Verify Reciprocity and Symmetry conditions for all the parameters. 8. Convert of one Parameter to another 9. Derive expressions for equivalent parameters when the twp port networks are connected in
Series, Parallel and Cascaded configurations. 10. Derive expressions for Image Parameters
TEACHING PLAN
S. No Description No. of
Periods (16)
Mode of delivery
1 Impedance Parameters, Admittance Parameters 04 BBT+
https://www.yout
ube.com/watch?v
22
=WVxWesqPto8
2 Hybrid Parameters, Transmission (ABCD)
Parameters
03 BBT+
https://www.yout
ube.com/watch?v
=a2ce5VGQbkk
3 Conversion of one Parameter to another 02 BBT
4 Conditions for Reciprocity and Symmetry 01 BBT+
https://www.yout
ube.com/watch?v
=GasWAlIvvD8
5 Interconnection of Two Port networks in Series,
Parallel and Cascaded configurations, Image
Parameters
02 BBT
6 Illustrative problems.
02 BBT
7 Assignment Questions Discussion 01 Assignment Sheet
8 Tutorial 01 Tutorial sheet
Tutorial
1. Find The Z Parameters For The Two Port Network In Fig.1
Fig-1: ideal transformer
2. Find the Z Parameters For The Two Port Network In Fig.2
Fig-2.
Assignment
1. Determine the ABCD parameters for the p-network shown at Fig. Is this network
Bilateral or not? Explain.
23
2. For the two port network shown in Fig the currents I1 and I2 entering at ports 1 and 2
respectively are given by the equations. I1=0.5V1-0.2V2, I2=-0.2V1+V2, where V1 and V2 are
the voltages at port 1 and 2 respectively. Find the Y, Z, ABCD parameters of the network.
Also
find its equivalent π network.
3. (a) Determine the transmission parameters and hence determine the short
circuit admittance parameters for the circuit shown in Fig. a
(b) Obtain Z parameters of the circuit shown in Fig.b and hence derive
h – parameters.
Fig.a
Fig.b
UNIT-III
Filters and Symmetrical Attenuators : Classification of Filters, Classification of Pass band and Stop band, Characteristic Impedance
in the Pass and Stop Bands, Constantk and m-derived filters-Low Pass Filter and High Pass
Filters (both qualitative and quantitative treatment); Band Pass filter and Band Elimination
filters (qunatitaive treatment only), Illustrative Problems. Symmetrical Attenuators – T-Type
Attenuator, pType Attenuator, Bridged T-type Attenuator, Lattice Attenuator.
Learning Outcomes
24
After completion of this unit the student will be able to
1. Define Filter, Pass band, Stop band, cut-off frequency. 2. Describe types of filters. 3. Derive expressions for Characteristic Impedance in the Pass and Stop Bands. 4. Derive expressions for series and shunt arm impedances of Constant-k Low Pass Filter and
High Pass Filters 5. Describe disadvantages of constant-k type filters. 6. Describe advantages of m-derived filters. 7. Derive expressions for series and shunt arm impedances of m-derived filters-Low Pass Filter
and High Pass Filters. 8. Derive expressions for series and shunt arm impedances of Constant-k Band Pass filter and
Band Elimination filters. 9. Describe the function of attenuator. 10. Describe the types of attenuator.
11. Design T-Type Attenuator and -Type Attenuator
12. Design Bridged T-type Attenuator and Lattice Attenuator.
TEACHING PLAN S. No Description No. of
Periods (16)
Mode of delivery
1 Classification of Filters, Classification of Pass
band and Stop band
02 BBT
2 Characteristic Impedance in the Pass and Stop
Bands, Constantk and m-derived filters-Low Pass
Filter and High Pass Filters (both qualitative and
quantitative treatment)
03 BBT
3 Band Pass filter and Band Elimination filters
(qunatitaive treatment only)
02 BBT
4 Illustrative Problems 03 BBT
5 Symmetrical Attenuators – T-Type Attenuator 02 BBT
6 pType Attenuator, Bridged T-type Attenuator,
Lattice Attenuator.
02 BBT
7 Assignment Questions Discussion 01 Assignment Sheet
8 Tutorial 01 Tutorial sheet
Tutorial 1. What is a constant – K low pass filter, derive its characteristics impedance.
2. A low pass π section filter consists of an inductance of 25mH in series arm and two
capacitors of 0.2μF in shunt arms. Calculate the cut off frequency, design impedance,
25
attenuation at 5 KHz and phase shift at 2 KHz also find the characteristic impedance at
2 KHz.
3. Design a band elimination filter having a design impedance of 600Ω and cut–off
frequencies
f1=2 KHz and f2=6 KHz.
Assignment
1. Design a band pass, constant–K filter with cut off frequency of 4 KHz and nominal
characteristic impedance of 500 Ω.
2. Design a low pass constant–K (i) T–Section and (ii) π–section filter with cut–off
frequency
(fc) 6 kHz and nominal characteristic impedance of 500 Ω.
3. (a ) A high pass constant–K filter with cut off frequency 40 kHz is required to procedure a
maximum attenuation at 36 kHz when used with terminated resistance of 500 Ω. Design
a
suitable m– derived T–section.
(b) Design a m–derived high pass filter with a cut – off frequency of 10KHz; design
impedance of 5Ω and m=0.4.
4 (a) explains T–type attenuator and also design a T–type attenuator to give an
attenuation of 60dB and to work in a line of 500Ω impedance.
(b) Explain symmetrical π–type attenuator and also design it to give 20db attenuation and
to
have characteristic impedance of 100Ω.
UNIT-IV- DC Machines DC Generators: Principles of Operation of DC Generator, construction, EMF equation,
Types of Generators, Magnetization, Internal and external Characteristics of DC Generators.
DC Motors : DC Motors, Types of Dc Motors, Characteristics of Dc Motors, Losses and
Efficiency, Swinburne’s Test, Speed Control of Dc Shunt Motor- Flux and Armature Voltage
control methods. Learning Objectives:
At the end of completion of all learning activities the student is able to
1. Describe Faraday’s Laws of electromagnetic Induction. 2. Describe the principle of DC generator. 3. Explain the operation of DC generator. 4. Describe the construction of DC Machine. 5. Derive the EMF equation of DC generator. 6. Describe the types of DC generators. 7. Plot Magnetization, Internal and external Characteristics of DC Generators 8. Determine critical resistance and critical speed of given DC Generator. 9. Explain the Principle of DC motor. 10. Explain the operation of DC motor. 11. Describe the significance of Back EMF in DC motor. 12. Describe the types of DC motors. 13. Plot the Characteristics of DC Motors 14. Calculate Losses and Efficiency by using Swinburne’s Test 15. Describe the advantages and disadvantages of Swinburne’s Test. 16. Describe Speed Control of Dc Shunt Motor by Flux and Armature Voltage control
methods.
TEACHING PLAN
26
S. No Description No. of
Periods (16)
Mode of delivery
1 DC Generators: Principles of Operation of DC
Generator .
01 BBT+
https://www.yout
ube.com/watch?v
=6dF3LDzb-tE
2 construction, EMF equation 01 BBT+
https://www.yout
ube.com/watch?v
=DmHw9M7Zfw
I
3 Types of Generators, Magnetization, Internal and
external Characteristics of DC Generators.
03 BBT
4 DC Motors : DC Motors, Types of Dc Motors 01 BBT+
https://www.yout
ube.com/watch?v
=1OfLgpFq6Rc
5 Characteristics of Dc Motors, Losses and
Efficiency
03 BBT
6 Swinburne’s Test, 01 BBT
7 Speed Control of Dc Shunt Motor- Flux and
Armature Voltage control methods
04 BBT
8 Assignment Questions Discussion 01 Assignment Sheet
9 Tutorial 01 Tutorial sheet
Tutorial
1. (a) Explain in detail the construction and the principle of operation of a dc generator
(b) The armature of a 4 – pole lap wound shunt generator has 480 conductors. The
flux perpole is 0.05Wb. The armature and field resistances are 0.05 Ω and 50 Ω. find
the speed of the machine when supplying 450A at a terminal voltage of 250V. Derive
the expression for the emf generated in a DC machine.
2. (a) Derive the expression for the EMF generated in a DC generator.
(b) A 6 – pole dc shunt generator with a wave – wound armature has 960 conductors.
It runs at a speed of 500 rpm. A load of 20Ω is connected to the generator at a
terminal voltage of 240V. The armature and field resistances are 0.3Ω and 240Ω
respectively. Find the armature current, the induced emf and flux per pole.
27
3. (a) What are the different types of dc generators? Draw the connection diagrams and
load
characteristics of each type. Also mention the applications of different types.
(b) A 250V DC shunt motor takes 4A when running unloaded. Its armature and field
resistances are 0.3 Ω and 250 Ω respectively. Calculate the efficiency when the dc
shunt motor taking current of 60A.
ASSIGNMENT
1. (a) Draw the speed–load characteristics of a dc shunt, series and compound motors.
(b) A 200V, 14.92kW, dc shunt motor when tested by Swinburne’s method
gave the following test results. Running light: Armature current of 6.5A and
field current is 2.2A. With armature locked: Ia=70A when potential difference
of 3V was applied to the brushes. Estimate efficiency of motor when working
under full load.
2. (a) Explain why a dc series motor should never run unloaded.
(b) A 250V, 10kW shunt motor takes 2.5A when running light. The armature
and field
resistances are 0.3Ω and 400Ω respectively. Brush contact drop of 2V.
Find the
full–load efficiency of motor?
3. (a) Discuss in detail the different methods of speed control of a dc motor.
(b) A 4-pole, 220V dc series motor has a wave connected armature with 1200
conductors. The flux per role is 20×10-3
wb, when the motor is drawing 46A.
Armature and series field resistances are 0.25 Ω and 0.15 Ω respectively. Find i) The
speed ii) Total torque.
4. (a) Derive the torque equation of a dc motor.
(b) A 500V dc shunt motor draws 4A on no load. The field current of the motor is 1A.
Its
armature resistance including brushes is 0.2Ω. Find the efficiency, when the input
current is 20A.
Unit –V Transformers and AC Machines
28
Transformers and Their Performance : Principle of Operation of Single Phase
transformer, Types, Constructional Features, Phasor Diagram on No Load and Load,
Equivalent Circuit, Losses, Efficiency and Regulation of Transformer, OC and SC Tests,
Predetermination of Efficiency and Regulation, Simple Problems.
AC Machines Three Phase Induction Motor : Principle of operation of three phase
induction motors- Slip ring and Squirrel cage motors –Slip_Torque characteristics.
Alternators: Principle of operation –Types - EMF Equation- Predetermination of regulation
by Synchronous Impedance Method- OC and SC tests. Learning Objectives: At the end of completion of all learning activities the student is able to
1. Describe Principle of operation of transformer and constructional details. 2. Describe difference between Ideal Transformer and Practical Transformer. 3. Draw Phasor Diagram on No Load and Load for different types of loads. 4. Derive the expressions for equivalent resistance and reactance of Single Phase
transformer. 5. Draw Equivalent Circuit. 6. Define Efficiency and Regulation of Transformer. 7. Describe OC and SC Tests for the Predetermination of Efficiency and Regulation. 8. Learn about three phase induction motor. Principle of operation of three phase induction
motor. 9. Slip and rotor frequency along with torque calculation of three phase induction motor. 10. Learn about three phase alternator.
11. Principle of operation of a alternator.
TEACHING PLAN
S. No Description No. of
Periods (16)
Mode of delivery
1 Transformers and Their Performance : Principle of Operation of Single Phase
transformer, Types, Constructional Features,
Phasor Diagram on No Load and Load, Equivalent
Circuit, Losses
04 BBT+
https://www.yout
ube.com/watch?v
=oJtY6xn6dkQ
2 Efficiency and Regulation of Transformer, OC and
SC Tests, Predetermination of Efficiency and
Regulation, Simple Problems.
03 BBT+
https://www.yout
ube.com/watch?v
=9TTxUY0vNb8
3 AC Machines Three Phase Induction Motor : Principle of operation of three phase induction
motors- Slip ring and Squirrel cage motors –Slip
Torque characteristics.
04 BBT
4 Alternators: Principle of operation –Types - EMF
Equation- Predetermination of regulation by
Synchronous Impedance Method- OC and SC
tests.
03 BBT+
https://www.yout
ube.com/watch?v
=b24jORRoxEc
5 Assignment Questions Discussion 01 Assignment Sheet
6 Tutorial 01 Tutorial sheet
Tutorial
29
1. (a) Single phase induction motors are not self starting. Explain Why?
(b) How is single-phase induction motors made self started? Explain one method.
2. (a) Draw the torque speed characteristics of a 3 phase induction motor.
(b) Derive the expression for the starting torque to Maximum torque
3. (a) why 1-_ induction motor is not self starting and explain the principle of Operation of
shaded pole induction motor with a neat diagram?
(b) A 14 pole, 50Hz induction motor runs at 415 r.p.m. Deduce the frequency of the
current in
the Rotor winding and the slip?
Assignment
1.Explain the rotor resistance starter for an induction motor. A 3-phase, 6 pole, 400 V, 50 Hz
induction motor. takes a power input of 35kW at its full-load speed of 890 r.p.m. The total
stator losses are 1 kW and the friction and wind age losses are 1.5 kW.Calculate
i. slip
ii. Rotor ohmic losses
iii. Shaft power
iv. Shaft torque and
v. efficiency.
2.(a) How the torque-speed characteristics of a motor are modified, if rotor resistance is
increased.
(b) ( i) A 3-phase, 6-pole, slip-ring induction machine is directly driven from the
shaft by
a 4-pole3-phase synchronous motor. If stator of both the machines is given a
50 Hz supply, what frequencies are available at the rotor slip-rings of the
induction
machine?
(ii) A 3-phase, 50 Hz, induction motor has a starting torque which is 1.25times
full-
load torque and a maximum torque which is 2.50 times full-load torque.
Neglecting stator resistance and rotational losses and assuming constant rotor
resistance, find
(A). the slip at full-load.
(B). the slip at maximum torque and
(C). the rotor current at starting in per unit of full-load rotor current.
3 .(a) Derive the expressions for induced e.m.f of an alternator for lagging, leading and
unity power factor loads. Draw the relevant phasor diagram.
(b) Derive the relation between speed and frequency.
(c) Explain the two types of rotors used in alternators with neat sketch
30
TEXT BOOKS:
1. Principles of Electrical Engineering- A.Sudhakar, ShyammohanS.Palli, TMH
publications.
2. Introduction to Electrical Engineering – M.S.Naidu and S. Kamakshaiah, TMH
publications
3. Network analysis and Synthesis- C L Wadhwa, New Age International Publishers.
REFERENCES :
1. Networks, Lines, and Fields – John.D.Ryder, PHI publications.
2. Engineering Circuit Analysis – W.H.Hayt and J.E Kemmerly and S.M.Durbin, TMH
publications.
3. Circuit Theory by Chakrabarti, DhanpatRai and Co.
4. Network Analysis – N.C.Jagan and C.LakshmiNarayana, BS publications.
5. Network Analysis – A.Sudhakar, ShyammohanS.Palli, TMH publications
COURSE ASSESSMENT METHODS
Mode of
Assessment Assessment Tool Periodicity
Percentage
Weightage Evidences
Direct
Mid Terms
Examinations Twice in a semester 25 Answer Scripts
Assignment, Quiz
etc. At the end of each unit 5
Assignment
Books / Quiz
sheets etc.
End Semester
Examination
At the end of the
Semester 70 Answer Scripts
Indirect Course End
Survey At the end of Semester 100 Feedback forms
VNR VIGNANA JYOTHI INSTITUTE OF ENGINEERING AND TECHNOLOGY
BACHUPALLY, NIZAM PET (SO), HYDERABAD-500090
MODELQUESTION PAPER
Subject: PRINCIPLES OF ELECTRICAL ENGINEERING
31
Branch: ECE
Time: 3 Hr
Max marks: 70
Part-A (compulsory)
(Answer all questions) 5X1=5
1(Answer all questions)
a .The time constant of a series RL Circuit.
b. Which parameters are widely used in transmission line theory.
c An attenuator is used to………
d. In a dc machine, inter poles are used to
e. By open circuit test we measure
2 ( Answer all questions) 5X2=10
1. What do you understand by transient and steady state parts of response? How can they be
identified in a general solution?
2. What is a constant-K low pass filter?
3. Explain about the lattice Attenuator.
4. State the principle of operation of a dc generator?
5. Derive the expression for the induced emf of a transformer?
3 (Answer all questions)
5X3=15
1. For the circuit shown in Fig.1, find the current equation i (t), when the
switch‘s’ is opened at t = 0.
.
Fig.1
2 Find Z and Y parameters of the network shown in Fig. 2.
Fig.2
3. Explain Bridge–T attenuator and also
design it with an attenuation of 20dB and
terminated in a load of 500Ω.
4. Discuss in detail the different methods of speed control of a dc motor
5. Derive an expression for the induced e.m.f. of a single phase Transformer.
32
PART-B
(Answer any four questions) 4X10=40
4 (a) What is a transient. For the circuit shown in Fig.3, find the current in 20Ω
resistor
when the switch ‘S’ is opened at t = 0.
Fig.3 (b) For the Series RLC circuit shown in Fig.4, the capacitor is initially charged to 1V, find
the current i(t), when the switch ‘S’ is closed at t=0usingLaplace transform.
Fig. 5
5 (a) Determine the transmission parameters and hence determine the short-circuit
admittance parameters for the circuit shown in Fig. 6
(b) Obtain Z parameters of the circuit shown in Fig.7 and hence derive h –
parameters.
Fig. 6 Fig. 7
6. (a) Design a m-derived high pass filter with cut-off frequency of 10 kHz; design
impedance 0f 5Ω and m=0.4
(b) Explain π – type attenuator and also design it to give 20db attenuation and to
have characteristic impedance of 100Ω.
33
7. (a) Explain in detail the principle of operation of a dc generator.
(b) The armature of a 4–pole lap wound shunt generator has 480 conductors.
The flux per pole is 0.05Wb. The armature and field resistances are
0.05Ωand50Ω. Find the speed of the machine when supplying 450A at a terminal
voltage of 250V.
8 (a) Explain the constructional details of
i. core type and
ii. shell type transformer.
(b) A 1- φ transformer has 800 turns on the primary and 100 turns on the secondary.
The no load current is 2.5 Amps at a p.f of 0.2 lagging. Calculate the primary current
and power factor when the secondary current is 250A at a p.f of 0.8 lagging..
9 (a) Derive the relation between speed and frequency.
(b) Explain the two types of rotors used in alternators with neat sketch.
-----------------------X---------------------
34
VNR VIGNANA JYOTHI INSTITUTE OF ENGINEERING & TECHNOLOGY
(Autonomous)
DEPARTMENT OF ELECTRONICS & INSTRUMENTATION ENGINEERING
II B. Tech I Semester
Subject : Sensors & Signal Conditioning
Subject Code : 5EI22
Academic Year : 2016 – 17
Number of working days : 90
Number of Hours / week : 3 + 1
Total number of periods planned: 68
Name of the Faculty Member: A.Adithya / G.Vamshi Krishna.
Course Objectives: Upon completion of this course, students should be able to:
1. To provide basic knowledge in transduction principles, sensors and transducer
technology and measurement systems.
2. To provide better familiarity with the Theoretical and Practical concepts of
Transducers.
3. To provide familiarity with different sensors and their application in real life.
4. To provide the knowledge of various measurement methods of physical parameters like
velocity, acceleration, torque, pressure, flow, temperature etc. and their relevance to
Industry.
Course Outcomes:
CO 1: Able to identify suitable sensors and transducers for real time applications.
CO 2: Able to translate theoretical concepts into working models.
CO 3: Able to design the experimental applications to engineering modules and practices.
CO 4: Design engineering solution to the Industry/Society needs and develop products.
Sensors and Signal Conditioning
Unit -I:
Introduction to measurement systems: general concepts and terminology, measurement
systems, sensor classifications, general input-output configuration, methods of correction.
Passive Sensors: Resistive Sensors: Potentiometers, Strain Gages, Resistive Temperature Detectors (RTDs)
Thermistors, Light-dependent Resistors (LDRs), Resistive Hygrometers.
Capacitive Sensors: Variable capacitor, Differential capacitor, Proximity sensors.
Inductive Sensors: Reluctance variation sensors, Eddy current sensors, Linear variable
differential transformers (LVDTs).
Variable transformers: Magneto elastic sensors, electromagnetic sensors-sensors based on
faraday’s law, Hall Effect sensors.
Learning objectives:
At the end of the unit-I, the student must be able to
35
Define the Basic terminology related to Instrumentation.
Define the basic units of a measurement system.
Define and differentiate between a sensor and transducer.
Classify different types of sensors.
Understand the construction and principle of working of various Resistive sensors.
Understand the construction and principle of working of various Capacitive sensors.
Understand the construction and principle of working of various Inductive sensors.
Understand the construction and principle of working of Variable transformers.
LECTURE PLAN:
TOPICS No of Classes
Define Measurement and Measurement systems 01
Define a sensor and a transducer and explain classification of sensors 01
Explain general input output configuration and methods of correction. 02
Construction and Working of Potentiometer 02
Construction and Working of Strain gauge 01
Construction and Working of RTD and Thermistor 01
Construction and Working of LDRs and Resistive Hygrometers 01
Problems on Resistive Transducers 02
Construction and Working of Variable and Differential Capacitor 01
Proximity Sensors 01
Princple and working of Reluctance variation and Eddy current sensors 01
Construction and Working of Linear variable differential transformers 01
Construction and Working of magneto elastic sensors 01
Construction and Working of Electromagnetic and Hall Effect sensors 01
Problems on Capacitive and Inductive Sensors 03
Assignment:-
1. Classify various errors and explain their significance with necessary examples.
2. Classify various transducers and give an example of each and mention their applications.
3. Describe the working and construction of resistance thermometers. Describe the materials
used for RTDs along with their properties.
4. Explain the working principle of potentiometer. Derive an expression for its loading error.
5. Describe in brief about piezo resistive gauges, mentioning its merits, demerits and
applications.
6. Explain the operating principle and working of Capacitive sensors.
7. Explain the construction and working of LVDT.
Unit II:
Self-generating sensors:
Thermoelectric sensors - Thermocouples, Thermo electric effect, common thermocouples,
practical thermocouple laws, cold junction compensation in thermocouples circuits.
Piezoelectric sensors-Piezoelectric effect, piezoelectric materials, applications.
Pyroelectric sensors - Pyroelectric effect, pyroelectric materials, radiation laws: Plank, Wein
and Stefan-Boltzmann, Applications.
Photovoltaic sensors- Photovoltaic effect, materials and applications.
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Learning objectives:
At the end of the unit-II, the student must be able to
Understand the working of Thermoelectric sensors
Understand the working of Piezoelectric sensors
Understand the working of Pyroelectric sensors
Understand the working of Photovoltaic sensors
LECTURE PLAN:
TOPICS No of Classes
Introduction to Thermocouples 01
Thermoelectric effect and types of Thermocouples 01
Thermocouple laws and compensation in thermocouples circuits 01
Problems on Thermocouples 02
Introduction to Piezoelectric effect and Piezoelectric materials 01
Construction and Working of Piezoelectric transducer and its applications 01
Problems on Piezoelectric sensors 01
Introduction to Pyroelectric effect and pyroelectric materials 01
Introduction to radiation laws: Plank, Wein and Stefan-Boltzmann 01
Applications of Pyroelectric sensors and Problems 03
Introduction to Photovoltaic effect and materials 01
Construction and Working of Photo voltaic transducer and its applications 01
Assignment:-
1. A Quatrz crystal has the dimensions 2mm x 2mm x 6mm Quartz has the following
properties.
Charge sensitivity=21 P C/N
Young modulus= 8.6x1010N/m2
Permitivity = 40.6 x 10-12 P/m
Calculate the force, charge and voltage if the crystal is subjected to stain of 10 x 10-6 N/m2.
2. A copper-constatantan thermocouple was found to have linear calibration between 00C to
40000C with emf at maximum temperature equal to 20.68 mV.
(a)Determine the correction which must be made to the indicated emf if the cold junction
temperature is 250C.
(b) if the indicated emf is 8.92 mV in the thermocouple circuit determine the temperature of
the hot junction.
3. Explain how a thermo couple is used to measure temperature. List and explain the three
laws
of thermo couples. What are the common materials used for thermo couples.
4. Describe the different modes of operation of Piezo electric transducers. Explain the
application of Piezo electric transducers.
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5. Describe the properties of materials used for Piezo-electric transducers. Derive the
expressions for voltage and charge sensitivities.
6. Explain how temperature can be measured using Radiation pyrometers.
7. Explain the working of Photovoltaic sensors.
Unit III:
Digital Sensors: Position Encoders, Incremental position encoders, absolute position
encoders, Variable frequency sensors-Quartz digital thermometers, vibrating cylinder
sensors, SAW sensors, Digital flow meters. Sensors based on MOSFET Transistors, Charge
coupled Sensors.
Smart Measuring Devices:
Smart sensor systems, Smart sensors definitions, Characteristics, Architectures, buses and
interfaces, Smart sensors for electrical and non-electrical variables: Pressure and
Temperature. Standards for Smart Sensors.
Learning objectives:
At the end of the unit III, the student must be able to
Understand the need for Digital sensors.
Understand the working of Position encoders.
Understand the working of Variable frequency sensors.
Understand the working of Quartz digital thermometers.
Understand the working of SAW sensors.
Understand the working of Digital flow meters.
Understand the working of Sensors based on MOSFET Transistors.
Understand the working of Charge coupled Sensors.
Understand the need for Smart sensors.
Understand the application of Smart sensors for measuring various physical quantities.
TOPICS No of
Classes
Understand the working of Position encoders 01
Understand the working of Incremental and absolute position encoders 01
Understand the working of Variable frequency sensors 01
Understand the working of Quartz digital thermometer 01
Understand the working of vibrating wire strain gage 01
Understand the working of vibrating cylinder sensors 01
Understand the working of SAW sensors 01
Understand the working of Digital flow meters 01
Understand the working of Sensors based on MOSFET Transistors 01
Understand the working of Charge coupled Sensors 01
Smart sensor systems and their characteristics 02
Architectures, buses and interfaces 02
Smart sensors for measurement of electrical and non-electrical variables 02
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Assignment:
1. Define digital sensor and explain the position encoder.
2. Write a short note on
(i) Quartz digital thermometer.
(ii) Vibrating wire strain gauges.
(iii) Vibrating cylinder sensor.
(iv) Digital flow meter
3. Write the principle of saw sensors and explain with one example.
4. Write the principle of a sensor which is based on semiconductor junctions.
5. Explain how smart sensors can be used for measurement of pressure and temperature.
Unit IV:
MEMS Sensors and Applications:
MEMS Overview: Unique Characteristics of MEMS, Typical Application Areas of MEMS,
MEMS Accelerometer, Optical MEMS, MEMS as a switch, MEMS Micro actuators,
Principles of micro sensors: MEMS for Pressure, Force and Temperature Measurement.
Learning objectives:
At the end of the unit IV, the student must be able to
Understand the need for miniaturization of devices/systems.
Understand the Unique Characteristics & Typical Application Areas of MEMS.
Understand the working of MEMS based switches & micro actuators.
Understand the application of MEMS in measuring various process parameters.
LECTURE PLAN:
TOPICS No of Classes
Introduction to MEMS 01
Unique Characteristics & Typical Application Areas of MEMS 01
Optical MEMS & MEMS as a switch 01
MEMS Micro actuators & MEMS Accelerometer 01
MEMS for Pressure, Force, Acceleration and Temperature
Measurement
02
Assignment:
1. What are unique characteristics of MEMS.
2. Write a short note on MEMS Accelerometer.
3. Explain how MEMS based devices can be used for Force and Temperature
measurement.
Unit V:
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Voltage dividers, Wheatstone Bridge, Instrumentation amplifier and linearization of resistive
bridge sensor, Electrostatic shield, Noise elimination using filters.
Introduction to Resolver-to-digital Converters and Digital-to-resolver converters:
Synchro-to-resolver converters, Digital-to-resolver converters, Resolver-to-digital
Converters.
Learning objectives :
After completion of V unit, the students will be able to:
Understand the importance of Voltage divider circuits and POTs.
Understand the concept of Wheatstone Bridge and linearization of resistive bridge
sensor.
Understand the concept of Electrostatic shield, Transistorized chopper & Capacitive
Modulator.
Understand the concept of Noise elimination using filters.
Understand the working of Synchro-to-resolver converters.
Understand the working of Digital-to-resolver converters.
Understand the working of Resolver-to-digital Converters.
LECTURE PLAN:
TOPICS No of Classes
Introduction to Signal conditioning 01
Voltage dividers & Wheatstone Bridge 02
Instrumentation amplifier and linearization of resistive bridge sensor 02
Electrostatic shield 01
Noise elimination using filters 02
Synchro-to-resolver converters, Digital-to-resolver converters, Resolver-to-digital
Converters
02
Assignment:
1) Write a short note on Instrumentation amplifier.
2) Explain Noise elimination using filters.
3) Explain the working of Digital-to-resolver converters.