VLSI Datapath Choices: Cell-Based Versus...

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Masterworks98 4/25/98 1 VLSI Datapath Choices: Cell-Based Versus Full-Custom Andrew Liang Ping Chang Concurrent VLSI Architecture Group Artificial Intelligence Laboratory Massachusetts Institute of Technology and Computer Systems Laboratory Stanford University

Transcript of VLSI Datapath Choices: Cell-Based Versus...

Page 1: VLSI Datapath Choices: Cell-Based Versus Full-Customcva.stanford.edu/publications/1998/achang_masterworks... · 2019. 1. 29. · Cell-Based Versus Full-Custom Andrew Liang Ping Chang

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VLSI Datapath Choices:Cell-Based Versus Full-Custom

Andrew Liang Ping ChangConcurrent VLSI Architecture Group

Artificial Intelligence LaboratoryMassachusetts Institute of Technology

andComputer Systems Laboratory

Stanford University

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Design Options

Standard-Cell

INCREASINGQualityCustomizationEffort

FPGA Standard-Cell Full-Custom

Lucent OR2C15A MIT Alewife A-1000 CMMU DEC ALPHA 21164

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Example: 0.25µm Technology

FPGA Standard-Cell Full-Custom

Xilinx XC4000CV25M T’s100MHz

< 500K Gates

IBM SA-1213.6M T’s (est)400MHz (est)

< 3400K Gates

Alpha KP2126415.2M T’s700MHz

Not Applicable

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Full-Custom Quality with Standard Cell Effort

l Limits of Cell-Based Datapathl Crafted-Cell Methodl Application Examples:

Microprocessor Register Fetch Stage64-bit Adder

Full-Custom vs Crafted-Cell vs Standard Cell

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Datapaths

l Structurally Regularl Composed of Bit-slicesl Apply operation to n-bitsl Examples: Register Files, Adders, Multipliers

.

..64b

RFADDERRF

Logical Physical

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MIT MAP Chip Design

l 64b Multi-ALU Processorl 6 IU’s, 1 FPU, 32KB Cachel 5M T’s - 2.7M Memory

2.3M Logicl Mix of Full-Custom and

Cell-based componentsl Complexity Similar to

HP PA8000 & Sun Ultra I

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Limits: Grids

Standard-Cell Full-Custom

POTENTIAL PENALTY: 16% - 21%

l Lose 1 X-track & 1 Y-trackX

Y

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Limits: N:P Transistor Ratio

Standard-Cell Full-Custom

l Datapaths Employ Smaller T’sl Datapaths are N-Dominated

AOI22 MUX2

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N:P Disparity

POTENTIAL PENALTY: 27%-54%

Library

Standard Cell

#Cells Ave CellArea (Χ )

% N-Trans

68

66Datapath

Ave T’s/Cell

8.5

9.0

2

95

149

N:P Ratio

39.4

48.9

1:1.54

1:1.04

Other Full Custom 50 13.0 266 43.9 1:1.33

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Gate Density (ρg) &Transistor Density(ρt)

l ρg - cell % dedicated to “gate”

l ρt - number of T’s per routing grid point

AOI22

Area = 60 grid points#T’s = 8

ρt = 0.1 T’s/grid

INV_16

Area = 108 grid points#T’s = 2

ρg = 20%

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Limits: Area Utilization

l Utilization AloneINSUFFICIENT

l Device InterconnectIMPORTANT

0%

5%

10%

15%

20%

25%

30%

AND

2 A

ND3

PLT

CH_C

ELL

AND

4 X

OR2

XNO

R2 C

KA_1

INV

_2 N

LTCH

_SCA

N P

DFF_

SCAN

NCK

A_1

NAN

D2 C

KA_2

INV

_4 N

AND3

NAN

D4 C

KA_4

AO

I21

BUF

_8 A

OI2

222

CKA

_8 A

OI2

2 I

NV_8

NCK

A_8

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

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Layout Efficiency: ηlayout

ηlayout = α β+ρt-max ρg-max

ρ t-cell ρg-cell

α

β

= 0.7

= 1.0

0.000.050.10

0.150.200.250.30

0.350.40

0% 10% 20% 30%

SRAM BIT_CELL

NCKA_8

(ρg-cell)%Fill

T’s/grid

(ρt-cell)

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Crafted-Cell Method

l Small Set of Module Specific Cells (<10)l Share INV’s, BUF’s, MUX’sl Reuse Cells Whenever Possiblel Custom Placementl Automated Routing

A Simplification of the Full-Custom Approach orAn Enhancement to Standard Cell Methods

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IRRDP Crafted-Cells

AREA GROWTH: 11% - 25%

l Aligned to Routing Gridl Explicit Pins

Pipeline LatchRegister BitRegister R/W

Full-Custom Crafted-Cell Full-Custom Crafted-Cell Full-Custom Crafted-Cell

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BIT-SLICE/FULL IRRDP

1x/1x 1.64x/1.64x 5.25x/14.5x

Standard-CellFull-Custom Crafted-Cell80 Different Cells 7 Different Cells 17 Different Cells

l 7 Specific vs 80 Custom Cellsl 7 Complex vs 17 Simple Cellsl Automated Placement

LOSES Structurel Bitslice > 97% Fill

Full < 33% Fill

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Area Growth Breakdown: +64%

l Growth in Width» +37% Within Cells» +2% Irregular Structures» +11% Additional Routing Tracks» +3% Well/Substrate Contacts

l Growth in Height» 1.07x (15 tracks/bit vs. 14 tracks/bit)

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Additional Experimental Results

Design

IRRDP

ADDSUB

Critical Path

Area

Critical Path

Area

Full-Custom Crafted-Cell Standard Cell

1450%

223%

440%(270%)

120% (167%)

100% 164%

111%

117%

174%

100%

100%

100%

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Conclusions

l Traditional Standard Cells Make Poor DatapathsToo Big, Too Few, Wrong Ratio!

l Crafted-Cells Overcome Traditional LimitsNear Full-Custom Quality w/ Standard Cell Effort!

l Crafted-Cells Successfully AppliedIRRDP, ADDSUB, & MAP chip!

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Acknowledgements - Full-Custom Baselines

l IRRDP layout - MCNCl ADDSUB design - Parag Gupta ‘96l ADDSUB layout - Cadence Spectrum Design