Vanderbilt University

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Vanderbilt Radiation Effects Research Institute for Space and Defense Electronics Ron Schrimpf Ron Schrimpf Department of Electrical Engineering Department of Electrical Engineering and Computer Science and Computer Science

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Vanderbilt Radiation Effects Research Institute for Space and Defense Electronics Ron Schrimpf Department of Electrical Engineering and Computer Science. Vanderbilt University. Located in Nashville, TN ~11,000 students Private - PowerPoint PPT Presentation

Transcript of Vanderbilt University

Page 1: Vanderbilt University

Vanderbilt Radiation Effects ResearchInstitute for Space and Defense Electronics

Ron SchrimpfRon SchrimpfDepartment of Electrical Engineering Department of Electrical Engineering

and Computer Scienceand Computer Science

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Vanderbilt University

Located in Nashville, TN

~11,000 students Private Engineering, Arts &

Sciences, Medicine, Law, Business, Education, Music…

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Vanderbilt Radiation Effects Program

25 graduate students 5 undergraduate students Open access Basic research and support of

ISDE engineering tasks Training ground for rad-effects

engineers

14 full time engineers 2 support staff ITAR compliant Support specific radiation effects

engineering needs in government and industry

Radiation Effects Research (RER) Group

Institute for Space and Defense Electronics (ISDE)

World’s largest university-based radiation effects program

10 faculty with extensive expertise in radiation-effects Beowulf supercomputing cluster Custom software codes EDA tools from multiple commercial vendors Multi-million $ aggregate annual funding Test and characterization capabilities and partnerships

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What is ISDE ?

Founded January 1, 2003 as a resource to support radiation effects analysis and rad-hard design needs

Brings academic resources/expertise and real-world engineering to bear on system-driven needs

ISDE provides: Government and industry radiation-effects resource

• Modeling and simulation• Design support: rad models, hardening by design• Technology support: assessment, characterization

Flexible staffing driven by project needs• 10 Faculty• 25 Graduate students• 14 Professional, non-tenured engineering staff

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ISDE Capabilities

Characterize radiation and reliability responses of technologies Develop and maintain device and circuit models and software

tools Apply simulation tools in support of design and characterization Assist in IC and system design activities Support development of test plans and standards Interpret radiation and reliability test results Assess capabilities and limitations of new technologies

• Deep submicron (scaling, new materials, new structures)• Opto, nano, bio

Provide training, documentation and instructional materials Serve as a radiation effects “SWAT” team

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Sampling of Current Projects

• U.S. Navy Trident II Life Extension (Draper prime)• DTRA Radiation Hardened Microelectronics• DARPA/DTRA Radiation Hardened by Design (Boeing prime)• NASA Electronic Parts & Packaging Program (NASA/GSFC)• NASA Extreme Environment Electronics (Ga Tech prime)• CREME Monte Carlo (NASA MSFC/RHESE)• Aging of Electronics (U.S. Navy DTO/Lockheed-Martin)• U.S. Air Force Minuteman Technology Readiness• BAE SEU-Hardened SRAMs (BAE prime)• SEE Charge Collection Signatures at 90nm (and below) (ANT/IBM prime)• Virtual Irradiation Simulator Development (Air Force/AEDC/PKP)• Integrated Multi-scale Modeling of Molecular Computing Devices (DOE)• Substrate Charge Collection Studies (MEMC)• CFDRC TCAD Tool Development (DTRA SBIR and NASA STTR)• Lynguent Compact Model Development (DTRA SBIR)• SEU Analysis (Medtronic)• GaN HEMT/amplifier simulation (Lockheed Martin)• Radiation Effects on Emerging Electronic Materials and Devices (AFOSR/MURI)• Design for Reliability Initiative for Future Technologies (AFOSR/MURI through

UCSB)• DTRA Basis Research Efforts (three 6-1 grants)

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Can we use high-performance computing to analyze radiation effects?

VAnderbilt Multi-Processor Integrated Research Engine (VAMPIRE)• Beowulf cluster consisting of

>1500 processors• Heterogeneous processors

(Pentiums, Opterons, PowerPCs)

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Simulation Capabilities

Defect ModelsVASP (DFT code)

Energy Deposition

MRED (Geant4)

MCNPX

Process:FLOOPS (Synopsys)

Device:Dessis (ISE/Synopsys)CFD-ACE+ (CFDRC)FLOODS (U of FL)

Circuit: SPECTRE (Cadence)HSPICE (Synopsys)ELDO (Mentor)

IC Layout & VerificationCadenceSynopsys

Compact Model Parameter Extraction:Cadence Pro+ (Cadence)Aurora (Synopsys) ISE Extract (ISE)

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Process Design Kit Development and Enhancement

BEC

DS

G

Technology Characterization: TCAD Simulations Radiation Enabled

Behavioral/Degraded Models

Design, Simulation, and Topology

Hardening Layout Hardening Techniques

Final Radiation Hardened Design

RH - PDK

Radiation Test Data

Model Development and Calibration

Custom Test Chip Design

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Physically Based Simulation of Radiation Events

63-MeV proton incident on a SiGe HBT Iso-charge surfaces following a nuclear reaction

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Motion of an ion thru Si<110>

0.08-0.080

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Radiation Effects on Emerging Electronic Materials and Devices: Motivation

More changes in IC technology and materials in past five years than previous forty years

• SiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra-small devices…

Future space and defense systems require identification and understanding of radiation effects to develop hardening approaches for advanced technologies

• Changes in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation…

New MaterialsDevice Structure

Device Response Circuit Response

IC Design

Energy Deposition

Defect Models

Si1-xGex Si1-xGex

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Technical Approach

Experimental analysis of radiation effects in emerging technologies through partnerships with semiconductor manufacturers

Identification of critical radiation effects mechanisms and challenges through first-principles modeling

Simulation of new radiation-effects mechanisms using custom Monte-Carlo energy deposition codes, device simulation tools, and high performance computing

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Radiation Effects in Emerging Electronic Materials and Devices:

Results

Radiation Response of New Materials

Single Events in New Technologies Localized Radiation Damage• RADSAFE—First multi-scale Monte Carlo single-event/rate-

prediction tool• Passivation/metallization found to dominate SEE response in

some hardened technologies• Excellent agreement with on-orbit data; conventional rate-

prediction methods underestimate rate by orders of magnitude

• Incorporation of new materials dramatically impacts radiation response

• HfO2-based dielectrics and emerging high-k materials tested; HfSiON is very promising

• Substrate engineering (strained Si, Si orientations, Si/SiGe, SOI) offers possibility for single-event hardening

• New device technologies strongly impact single-event response and TID leakage current

• SiGe HBTs, strained Si CMOS, ultra-small bulk CMOS exhibit complicated charge collection mechanisms

• Floating-body SOI found to exhibit high radiation-induced off-state leakage due to tunneling

Impact of New Device Structures

• First-principles evidence of micro-melting in small devices

• Displacement damage found to depend on substrate doping type

• Monte-Carlo simulation tool for non-ionizing energy loss developed

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Predict error rate

Radiation Environment Models

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D

E

F

H

G

Direct SEHit

CLK

SoftFault

SoftFault

D Q

Q

D Q

S2

S1

Possible PathState 000

Possible PathState 100

Q

I

CombinationalSE Hit

A1

B1

C1

Radiation Transport Models

•Device Single Event Effects

•Circuit Single Event Effects

System Single Event Effects

Advanced Radiation Effects AnalysisAutomated Connection Between Models

Accelerator-Based Experiments

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Summary

Vanderbilt has the largest university-based program focused on radiation effects in electronics.

Comprehensive approach from basic particle interactions to large-scale circuit and system performance.

Collaboration with multiple organizations.