van der Waals Epitaxy of One- dimensional II-VI Nanostructures · 1.5 sccm . 11 -ZnTe Flag on 10 nm...

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1 van der Waals Epitaxy of One- dimensional II-VI Nanostructures Alex Owen on behalf of Ezekiel Ogle Advisor: Haitao Zhang

Transcript of van der Waals Epitaxy of One- dimensional II-VI Nanostructures · 1.5 sccm . 11 -ZnTe Flag on 10 nm...

Page 1: van der Waals Epitaxy of One- dimensional II-VI Nanostructures · 1.5 sccm . 11 -ZnTe Flag on 10 nm Au/Si . 12 . Summary • ZnTe on mica — Tiny nanowires upstream of the source.

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van der Waals Epitaxy of One-dimensional II-VI Nanostructures

Alex Owen

on behalf of Ezekiel Ogle Advisor: Haitao Zhang

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Outline

• Introduction • Experimental Setup and Procedures • Results and Discussions • Summary and Future Work • Acknowledgements

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Introduction — Objectives

• Achieve high quality and uniform growth • Employ CVD for heterogeneous growth • Compare:

– van der Waals epitaxy – Conventional epitaxy

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Introduction — What are II-VI Materials?

II-VI Semiconductors:

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— Applications of II-VI Nanostructures

II-VI Nanostructures applications • Photovoltaic conversion • Light emission • Photo detection • High-energy radiation detection

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— Epitaxial Growth: van der Waals vs. Conventional

Conventional Epitaxy van der Waals Epitaxy

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Experimental Setup and Procedures —Chemical Vapor Deposition System

• Home-made low cost CVD system with precision flow controller and wide-range vacuum gauge

• Temperature range: room temperature to 1000 °C • Pressure range: mTorr to atmospheric pressure

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—System Setup Temperature Profile

0100200300400500600700800900

1000

-5 -4 -3 -2 -1 0 1 2 3 4 5Mea

sure

d Te

mpe

ratu

re (⁰

C)

Distance from Center of Furnace (in)

600 ⁰C

700 ⁰C

800 ⁰C

900 ⁰C

1000 ⁰C

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Results and Discussion — ZnTe on Mica

(a) (b)

(c) (d)

Pressure ~50 Torr

Temperature 800 oC

Time 30 min

H2

1.5 sccm

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— ZnTe on 10 nm Au/Si (a) (b)

(d) (e) (c)

Pressure ~50 Torr

Temperature 850 oC

Time 60 min

H2

1.5 sccm

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-ZnTe Flag on 10 nm Au/Si

Page 12: van der Waals Epitaxy of One- dimensional II-VI Nanostructures · 1.5 sccm . 11 -ZnTe Flag on 10 nm Au/Si . 12 . Summary • ZnTe on mica — Tiny nanowires upstream of the source.

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Summary • ZnTe on mica

— Tiny nanowires upstream of the source. — Downstream, the growth turned directly to a thick film — Film showing epitaxial growth

• ZnTe on Si with Au catalysts — Ultra-long micro-wires up to 20mm at high temperature

zone: ~680 - 630 — Ultra-long nanowires up to 10mm at medium

temperature zone : ~630 - 575 — Dandelion-like nanowires at low temperature zone :

~575 - 480 — Flag structures waving under SEM

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Future Work • Modify temperature profile • Study crystal structure and epitaxial growth

relation • Investigate the evolution of nanowires • Improve crystal quality and uniformity • Core-shell II-VI nanostructure

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Acknowledgements

• Financial support from NSF Ceramics program DMR-1006547 and UNC Charlotte Faculty Research Grant FRG 1-11769

• Group members: Alex Owen, Tao Sheng • Xu group: Youfei Jiang • Advisor: Haitao Zhang • Department of M.E. : Tracy Beauregard