UNIVERSAL COLLEGE OF ENGG. AND TECH.. B IPOLAR J UNCTION T RANSISTORS EE314.
-
Upload
lucinda-norman -
Category
Documents
-
view
214 -
download
1
Transcript of UNIVERSAL COLLEGE OF ENGG. AND TECH.. B IPOLAR J UNCTION T RANSISTORS EE314.
The transistor was probably the most important invention of the 20th Century, and the story behind the invention is one of clashing egos and top secret research.
First - BJTs
Reference:Bell Labs MuseumB. G. Streetman & S. Banerjee ‘Solid State Electronic Devices’, Prentice Hall 1999.
First Bipolar Junction TransistorsW. Shockley invented the p-n junction transistorThe physically relevant region is moved to the bulk of the material
BJTs – Basic ConfigurationsFluid Flow AnalogyDifference between FET (field effect transistor) and BJTTechnology of BJTs
pnp BJT npn BJT
RECALL P-N JUNCTION
P NWVappl > 0
-+
N PWVappl < 0
-+
Forward bias, + on P, - on N (Shrink W, Vbi)
Allow holes to jump over barrier into N region as minority carriers
Reverse bias, + on N, - on P (Expand W, Vbi)
Remove holes and electrons awayfrom depletion region
I
V
I
V
BIPOLAR JUNCTION TRANSISTORS: BASICS
+
- +
-
IE IBIC
IE = IB + IC ………(KCL)
VEC = VEB + VBC ……… (KVL)
BIPOLAR JUNCTION TRANSISTORS: BASICS
EC
E 6
63
Bias Mode E-B Junction C-B Junction
Saturation Forward Forward
Active Forward Reverse
Inverted Reverse Forward
Cutoff Reverse Reverse
PNP TRANSISTOR AMPLIFIER ACTION
EC
E 6
63
IN (small)
OUT (large)
Clearly this works in common emitterconfiguration
COMMON BASE DC CURRENT GAIN - PNP
Common Base – Active Bias mode:
EC
E 6
63
IC = DCIE + ICB0
ICp = TIEp = TIE
IC = TIE + ICn
DC = T
COMMON EMITTER DC CURRENT GAIN - PNP
Common Emitter – Active Bias mode:
EC
E 6
63
IE = DCIB + ICE0
DC = DC /(1-DC)
IE
IBIC
IC = DCIE + ICB0
= DC(IC + IB) + ICB0
IC = DCIB + ICB0
1-DC
GAIN !!
COMMON EMITTER DC CURRENT GAIN - PNP
EC
E 6
63
T
Tdc
1
Thin base will make T 1Highly doped P region will make 1