Unique opportunities for new insight in the outer surfaces ... · Co LEIS signal Co Al 2O4 Zn Co...
Transcript of Unique opportunities for new insight in the outer surfaces ... · Co LEIS signal Co Al 2O4 Zn Co...
ION-TOF GmbHHeisenbergstr. 15D-48149 Münster / Germanywww.iontof.com
March 23, 2011Lehigh University
Unique opportunities for new insight in the outer surfaces and interfaces by
High Sensitiviy Low Energy Ion Scattering (HS-LEIS)
Hidde Brongersma
ION-TOF GmbH / Eindhoven University of Technology / Imperial College (London)
1
� Introduction
� Principles and features of LEIS
− 1st atom, In – depth ( 0 – 10 nm ), quantitative
� Applications
− Organics (surface modific., anti-wetting, SAMs)
− Catalysts (mixed oxides, coke, NP’s, oxid. states)
− Ceramics (SOFC, membranes)
− ALD growth (high-k, inter-diffusion)
− and many more .......
Outline
Why High-Sensitivity LEIS ?
CONTROL at the ATOMIC LEVEL
QUANTITATIVE ANALYSIS at the ATOMIC LEVEL
requires
Ef = f(M0, M1, M2, θ)*Ei
Low Energy Ion Scattering
Analytical Capabilities
Energy
Inte
nsity
θ
3He+, 4He+, Ne+, Ar+
Ef (eV)
Energy spectrum of an alloy
0 1000 2000 3000
S (
a.u
. )
Ne+ � alloyEi = 3000 eV192Ir
103Rh
55Mn
51V
59Co39K
� Atomic composition of the outermost atomic layer
� Energy 1 – 8 keV� Lateral resolution 0.01 – 1 mm� Static in-depth (0 – 10 nm)� Quantitative !!� No matrix effects
LEIS
sig
nal
0.75 0.80 0.85 0.90 0.95
Pd
Pt
Ef / Ei
0.75 0.80 0.85 0.90 0.95
Pt
Pd
LEIS
sig
nal
Ef / Ei
4He 10,000 nC 4He 5.4 nC
NIM B 68 (1992) 207
Conventional High-Sensitivity LEIS
Promoters visible, but removed
Conventional LEIS vs HS - LEIS
Pd / Pt-C ( 1000 m2/g )
Noble gas ion source
Pulsing system
Position sensitive detector
Sample
Energy analyser
Focussing Optics
Energy image:
� parallel energy detection
� only low dose needed
STATIC LEIS
“ Analysis before Damage ”
(Molecular Dynamics simulation)
“ Hit same place only once “
ToF filtering eliminates SIMS ions
Qtac : Unique new AnalyserHigh – Sensitivity LEIS
� Analysis before damage (static)
� 1st Monolayer
� Quantitative (peak concentration / coverage)
� Sensitivity
� Mass resolution
� ToF-filtered LEIS
� Imaging----------------------------------------------------------------------------------------------------------------------------------
� In-depth: Static (0 – 6 nm) or with sputtering
HS-LEIS: Principles and Key Features
LEIS and SIMSTime resolved: LEIS analysis before damage !
LEIS
SIMS
ION-TOF GmbHHeisenbergstr. 15D-48149 Münster / Germanywww.iontof.com
Quantification
Review:
Brongersma et al., Surf. Sci. Reports, 62 (2007) 63 – 109.
QuantificationBromine adsorption on Tungsten
100
200
300
400
500
600
0
0 100 20050 150
SBr ( a.u. )
SW
( a.
u.)
θ W + θ Br = 1
No matrix effect !
1st atom
Simple interpretation !!
θ = fraction 1st atom layer
θ w = 1
θ Br = 1
Bulk Composition Ag80 Al20
NO matrix effectsNO matrix effectsNO matrix effectsNO matrix effects
Surface Composition Ag66 Al34
( independent of primary energy )
1000 1500 2000 2500 3000 35000
20
40
60
80
100total
Ag
Sur
face
cov
erag
e (%
)
Primary energy (eV)
4He 3He
Al
Rough silica: 50 – 380 m2/g
HS-LEIS: Insensitive to roughness
LEIS Signals:
rough silica about 77%
of flat silica (quartz)
0 100 200 300 4000
600
1200
1800
LEIS
Sig
nal (
Cts
/nC
)
Specific surface area (m2/g)
Si O
W.P.A. Jansen et al., SIA 36 (2004) 1469 - 1478.
Monolayer sensitivity
XPS
LEIS
SIMSsubstratesubstratesubstrate
SIMS not quantitative for near-surface / interface
XPS average over 3 – 10 nm; chemical info
LEIS 1st atom and in-depth; quantitative, sensitive
SE imageTi
Sn Pb
Elemental mapping by LEIS and SE Image Solder bumps
Depth info for
Ultra thin layers and interfaces
LEIS and Microelectronics
Two possibilities:
1. Static LEIS + sputter depth profiling with dual ion beam
( advantage of quantification, depth resolution LEIS)
2. Static LEIS
(analogous to RBS and MEIS, but better depth resolution)
In – Depth profiling
Depth info
Si
ZrO2
He+
Ef
3 keV
Heo
Zrsurf
Zrbck
Osurf
Sibck
Sisurf Fin
al E
nerg
y
Depth resolution better for lower primary E !
He+
∆E≅ 160 eV/nm
1st atom and Static Depth Profile
ZrO2 Atomic Layer Deposition on Silicon
� Closure / quantification pinholes (still present after 70 cycles)� Thickness distribution ZrO2 layer (160 eV/nm)� No matrix effect� Example: calibration / quantification for a 2 component system
70 cycles
24
In LEIS only backscattered ions are detected
Peaks: Ions backscattered from 1st atom.(one well-defined collision)
Tails: Backscattering in deeper layers + reionization (Scattering by oxygen atoms: efficient reionization)
Shape: f ( in-depth distribution Zr )
Intensity: f ( oxygen concentration in 1st atomic layer )
INFO from LEIS spectra
LEIS TechniqueFeatures of Low Energy Ion Scattering (LEIS)
He+, Ne+, Ar+, Kr+
1 - 8 keV
LEIS Features
Ultra-high surface sensitivity, top atomic layer analysis
Static depth profiling information (up to 10 nm)
Reliable and straight-forward quantification
Detection of all elements > He
Detection limits:
Li - O ≥ 1 % of 1 ML
F - Cl 1 % - 0.05 % of 1 ML
K - U 500 ppm - 10 ppm of 1 ML
Sample Treatment Atom Source for Surface Cleaning
O2 or H2
O or H atoms
Sample
COCO2
H2O
CxHyOz
� O atoms remove organics, coke� Chemical energy: no sputtering
� Surface segregation
� Dendrimers
� Antiwetting
� Surface modification
� Metal / polymer interface
� SAMs
Organics
Polymers, SAMs, ...
� Inter - molecular segregation� Segregation impurities, additives (0.1 s - days - ..;
up to 108 x !! )
� Intra - molecular segregation (0.1 s - days - ..)� Aging plasma oxidized PE
� Anti - wetting layers
� Metal diffusion in polymers
� SAM’s
Acrylonitrile-Butadiene-Styrene (ABS)Surface segregation of additives
0 1000 2000 30000
1
2
3
4
ZnC a
O
N
LEIS
Sig
nal (
Cts
/nC
)
E nergy (eV )
C
N a
P b
Metal - polymer interface in ultra - thin layers
PLED: Ba evaporation on PPVLE
IS S
igna
l (C
ts/n
C)
1500 2000 2500 30000
2
4
6
8
10
12
7 nm
During evaporation of barium on PPV, most of the Ba diffuses into the PPV.
Compare the peakshape of a sub-monolayer of Ba (blue) with the actual peak (red)
Peak shape ↔ depth distribution
Measured
Ba for < 1 ML
Energy (eV)
PLED: higher light output for narrow depth distribution
High-energy edge of SAMs on Au
2200 2375 2550 2725 29000
4
8
12
16
20
Au
Nor
mal
ised
inte
nsity
(C
ts/n
C)
Energy (eV)
Au (x 0.02) Au (dirty) + C11 - thiols Au (clean) + C11 - thiols
11Å7Å
overlayer thickness
Fluorinated thiol on dirty Au surface
Fluorinated thiol on clean Au surface
7Å11
Å
Aging of plasma oxidized HDPE
� Aging (LEIS) faster than aging (XPS) !
� “Straight line” � diffusion process
Time1/2 (min)
1.25
1.75
2.25
0 20 40 60 80 100 120
0.25
0.75
1.25XPS
LEIS
Log(
O in
at%
)
XPS
LEIS
Selection of examples:
� Pt/Au
� Mixed oxides
� γ-alumina
� Poison (Coke on TWC)
� Poison (oxygen membranes, SOFC)
� Use of probe molecules
� NP’s , core/shell
� Oxidation state 1st atom
HS – LEIS and Catalysis, Ceramics
Important / unique applications for catalysisMixed oxides and catalysis
0
1
2
0 5 1 0 1 50
1
2
0 5 1 0 1 5
2
00
1Yie
ld
15105Co LEIS signal
CoAl2O4
ZnCo2O4
The atomic composition of the 1st atom layer controls catalysis.
In a spinel ( AB2O4 ) only the B-cations (octahedral site) are catalytically active and visible for LEIS (1st at.).
The A-cations (tetrahedral sites) are in 2nd layer (not active, no LEIS peak).
Co3O4 = CoCo2O4
Test reaction:
only Co catalytically active
Co signals:
XPS: 1 : 2 : 3
LEIS: 0.3 : 1.9 : 2.0
LEIS Catalysis XPS
� Performance relies on oxygen transport
� Performance: “ Hampered by the surface ”
� Why ? What is the surface ??
M. de Ridder et al., J. Appl. Phys. 92 (2002) 3056 - 3064
M. de Ridder et al., Solid State Ionics 156 (2003) 255 - 262
Fuel Cells and MembranesImportance of the outer surface
0 1000 2000 30000
100
200
300
Hf/Ba
(Y,Zr)
Ca
SiNa
FO
LEIS
sig
nal (
a.u.
)
Energy (eV)
sample 2 sample 4
Calcination for 5 hours at 1000oC in an oxygen flow of 1.5 bar.
Segregation of monolayer of impurities
For T > 700 C: No Y, Zr in 1st atom !
Fuel CellsYttria stabilized Zirconia (YSZ) after calcination
XPS: Ca not visible ( ↔ Zr )
0.0 0.2 0.4 0.6 0.8 1.00.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
YS
Z c
over
age
Isot
opic
frac
tion
18O
CaO Coverage
M. de Ridder et al., Solid State Ionics 156 (2003) 255 - 262
Fuel CellsCaO coverage blocks 16O –18O exchange
0.0 0.2 0.4 0.6 0.8 1.00.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
YS
Z c
over
age
Isot
opic
frac
tion
18O
CaO Coverage
M. de Ridder et al., Solid State Ionics 156 (2003) 255 - 262
Fuel CellsCaO coverage blocks 16O –18O exchange
Cold start: 50% loss of Pt signal — sintering or coke formation ?
Room temperature oxidation with atomic oxygen gives complete recovery
of Pt signal loss is due to coke.
Detection of C with “any” surface technique. But: WHERE is the coke ??!
LEIS determines which fraction of Pt is covered by coke !
J.M.A. Harmsen, et al., Catal. Lett. 74 (2001) 133 – 137.
Applications:� Number of Pt atoms available for catalysis.
Quality control of catalysts !
� Detection of nucleation site for coke (active phase, support, binder, ... )
Coke Formation on Commercial TWC
Three Way Catalyst (TWC) ( Pt, Rh / CeO2 / γ – Al2O3 )
TEM:
� excellent catalyst characterisation
� detailed info, but local
� contrast required ( high Z cluster on low Z support )
Chemisorption:
� requires known probe / surface interaction
HS - LEIS:
� new technique; any material; clusters: 1 atom - 10 nm
Comparison: Richard A. P. Smith (J&M), ECASIA 2009
T. Tanabe et al. (Toyota), Appl. Catal. A370 (2009) 108
Particle Size on Supported Catalysts
Diameter TON; size often related to failureDiameter TON; size often related to failureDiameter TON; size often related to failureDiameter TON; size often related to failure
Example: Three-Way catalyst (exhaust)
Pt clusters on CeO2/ …../ γ-alumina
Loading = 0.004 g Pt / γ-alumina
Cluster diameter: 1.6 nm (average)
Accurate for d < 10 nm
Important / unique applications for catalysis4. Nanoclusters
� Average diameter nanoclusters
� Surface segregation in alloy clusters
� Core/shell particles
(verification, closure, thickness shell)
The diameter is derived from the ratio of the bulk loading (volume) to the LEIS signal (surface area)
This method is possible where TEM fails ( d ≤ 2 nm; high Z support)
0 2 4 60
6
12
18
Zn/
Cu
atom
ic r
atio
Depth (monolayers)
CO/CO2/H
2 at 573 K
H2 at 473 K
H2 at 573 K
H2 at 673 K
bulk
Strong Zn(O) segregation
Zn(O) on top of Cu is thermodynamically favorable
bulk
1st atom
Cu / ZnO / SiO2 CatalystsSynthesis of Methanol, Fatty Acids
XPS:Oxidation states, BUT averaged over 10 – 20 atomic layers.
LEIS:Elemental composition outer atomic layer, BUT no chemical infoOxidation of metallic Cu, Zn gives shielding by oxygen.Signal decrease: factor 5 resp. 3.7.
Chemical titration:Information on oxidation states, BUT not only the outer surface (?)
? ? ?
Oxidation states Cu and Zn in outer surface ?
LEIS + chemical titration !
XPS:Oxidation states, BUT averaged over 10 – 20 atomic layers.
LEIS:Elemental composition outer atomic layer, BUT no chemical infoOxidation of metallic Cu, Zn gives shielding by oxygen.Signal decrease: factor 5 resp. 3.7.
Chemical titration:Information on oxidation states, BUT not only the outer surface (?)
LEIS + Chemical titration: oxidation states in the outer surface !
� N2O for oxidation
� LEIS for detection increase in shielding after N2O treatment
Oxidation states Cu and Zn in outer surface ?
LEIS + chemical titration !
Cu/Zn/SiO2 reduced at 473 K Cu/Zn/SiO2 reduced at 673 K
Outermost atomic layer:ZnO 0.42Cu1+ 0.54Zn0 0.02Cu0 0.02
SiO2 support
Subsurface:Cu: Zn = 9
Outermost atomic layer:ZnO 0.77Cu1+ 0.03Zn0 0.19Cu0 0.01
SiO2 support
Subsurface:Cu: Zn = 9
Cu / ZnO / SiO2 - CatalystDetermination of cluster size and oxidation states by LEIS
Atomic Layer Deposition (ALD)
“ Growth with Digital Accuracy “
LEIS and Microelectronics
ALD cartoons: (often) show closed layer after 1 cycleIn practice: closure after a few up to > 100 cycles !
Typical examples (depending on ALD conditions ! ):
o 6 cycles CrOx / Al2O3o 6-9 cycles HfO2 / Sio ~ 15 cycles ALN / SiO2o ~ 40 cycles Al2O3 / Sio ~ 70 cycles Fe2O3 / ZrO2o ~ 150 cycles TiN / SiO2
How many cycles for Closure ?
Layer thickness versus cycle #
Max
Average
Min
Cycles
Thi
ckne
ss
Linear growth
Transient
Closure
The transient regime determines closure and uniformity
?
Characterization of MOCVD vs. ALD HfO2 layer closure and growth mode on Silicon:a new model for preferential deposition
M.J.P. Hopstaken1, M.S. Gordon1, J. Schaeffer2, H. Jagannathan1,
T. Grehl3, H.H. Brongersma3,4, M. Copel1, M.M. Frank1, V. Narayanan1,
K. Choi2, M. Fartmann4, D. Breitenstein4
1IBM Research, 2GLOBALFOUNDRIES, 3ION -TOF, 4Tascon
ALD 2010, June 21 – 23, 2010 Seoul, Korea
0 1 2 3 4 5 6 7 8 90
20
40
60
80
100
RBS HfO2 thickness (Å)
LEIS
sur
face
cov
erag
e (%
)
RBS areal Hf-dose (1015 at.cm-2)
MOCVD Si Hf F
0 5 10 15 20 25 30
0 1 2 3 4 5 6 7 8 90
20
40
60
80
100
RBS HfO2-thickness (Å)
LEIS
sur
face
cov
erag
e (%
)
RBS areal Hf-dose (e15 at.cm-2)
HfO2
SiO2
0 5 10 15 20 25 30
HfO2 layer closure: MOCVD vs ALD
MOCVD ALD
Layer closure
Layer closure
Surface fractions (LEIS) as function of coverage
Earlier layer closure for ALD-HfO2
LEIS and Growth
� Initial growth; growth mode
� Poisoning, activation
� Closure, pinholes
� Thickness distribution
Conclusion IBM / Global Foundries / ION-TOF / Tascon study:
� Origin of the superior quality of the ALD grown layers
revealed by HS-LEIS
( other analytic tools have insufficient depth resolution )
Summary: Why do you need LEIS ?? !!
� Any material, any T� Quantitative� 1st atom and high-resolution in-depth !!
Unique applications of High Sensitivity LEIS ( NOT’s )
� Segregation, Anti-wetting � Adhesion: “ 5% vs 100% “� Follow ultrathin growth� Pinholes in ultrathin; Nano pinholes� Metal / polymer in-depth diffusion� Catalysis: poison, promoter, probe molecules, core-shell, …..� Nanoclusters (diameter; outer atoms) � Inorganics: oxidation states� Improve cleaning strategies
Complementarity to XPS, ToF-SIMS, …..
Miscellaneous applications
� Microelectronics, polymers, ceramics, catalysis, sensors, ……..
But also:
� Pinholes in coatings� Candy wrappers� Gold mining� F 16 Dome� Bone tissue, implants, stents, …...� Ageing of Linoleum ( “ Linowonder” )� Anti-wetting (watches, …..)� Floor wax
Complementary Cutting Edge techniques
HS-LEIS HR-XPS
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Thank you for your attention.