UNCLASSIFIED

AD NUMBERAD315467

CLASSIFICATION CHANGES

TO: unclassified

FROM: confidential

LIMITATION CHANGES

TO:

Approved for public release, distributionunlimited

FROM:

Controlling DoD Organization: Departmentof the Army, Diamond Ordnance Fuze Labs.,Washington, DC.

AUTHORITYHarry Diamond Labs., D/A, ltr dtd 15 Aug1979; Harry Diamond Labs., D/A, ltr dtd 15Aug 1979

THIS PAGE IS UNCLASSIFIED

REPORT NO. P-0lF

PERIOD -

july - 5pte.ber 1959REGORM-)1K DATA CANNO~i BEz PRE"DE'TRMI!JED

PROGRESS IN MINIATURIZATION

AND MICROMINIATURIZATION (U)

DEPTAS OF TAEAMWASWIINGTON 25I, Vi Ce 2u

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CON NALTABLE OF CONTENTS

Page

Abstract 5

I. INTRODUCTION (U) 5

2. SYSTEMS 5

2. 1 (C) Light-Weign: GM Fuzing System (Copperhead) 52. 2 (U) The Cigarette Fuze 62. Z (U) Radar Range Finder 62.4 (U) Radar Altimeter (Jupiter) 62. 5 (C) Radar Altimeter (Pershing Types I and 1) 6

S2. 6 (U) Radar Beacon 72.7 (U) High G Telemeter 7

3. COMPONENTS AND ASSEMBLIES3.1 (C) Millineter Magnetron 83. 2 (C) Microwave Strip Line 83.3 (U) Pure Pneumatic Competer Elements 93.4 (U) Electronic Programmers 93.5 (U) Power Supply 93.6 ,U) "2-D" IF Amplifier 113. 7 ()) Digital Electronic Program Timer 113. 8 (U) A C Signal Comparator 143.9 (U) Trouble Shooting the DOFL "2-D" Binary Counter 14

3. 10 (U) Microlamp 143. 11 (U)•High-Frequency Diffused-Base Transistors 173. 12 (U) Tunnel Diode 173.13 (U), NOR Semiconductor Solid Circuit 183. 14 (U); Printed Cables and Harnesses 183. 15 (U) Antennas 183. 16 (U) Thin-film Capacitors and Resistors 19

4. ME IWHO-) PROCESSES AND TECHNIQUES 204. 1 (U) .'pray-etching 204. 2 (U) External Effort on "2-D" Wafers 20

5. REFERENCES 21

,109MN1AL3

ABSTRAC'7

(U)This report describes briefly the significant accompi$sh-ments and progress ,aade in miniaturization work at this iaasti1ationduring the .perio4 1 July 1a.: .,&,'ough 30 Septomber 1959. Follow-ing the outline of the s-ennd annuaI rk iort WO) on thissame general subject, Lw.,rmation is pre ted under the followingthree headings: (1) systems, (2) compon .ts and assemblies, Lnd() methods, processes and techniques.

1. INTRODUCTION

(U) Two annual reports of the E1OFL microminiaturization pro-gram have appeared previously. The first (ref 1) presented a briefhistoX-ical introduction to DQF 4 work which fell in the general areaof miniaturization, and described recent developments in the specificarea. of m.r ..'aminicturization up to June 1958. The second annual re-port (ret 2) co,,ered dev-'.opments in the area of micrornIniaturizationin the period June 1958 through June 1SH1.

(U) Thin present report is a quarterly report, the first of aseries of quarterly reports planned for FY 1960 in order to providetimely suir,. ?rise for adl sponsors of the DOFL microminiaturiza-tion progr m.

2. SYSTEBI.,S

2. Ligat-Weight GM Fn-zin System "2opperhead)

"(C) A d ili.ay model to illusti- de physical characteria-tics of a lightweight integrated f'•,ing -.-. , device, arming pro-graxni'rr, #and poWer supply, fPr use o, i'.:.ctical mis•ile weapons wasdeLvered to ORDTN in Februar*- A This model weighs on!y 15 lbcompared with 60 lb for the Little john Adaption Kit. It consists ofdual chaninels. each containing (eP ,. ifety mechanisexi and arming pro-grammer, (b) a UHF Cobra--' p- r fuze, (c) an electrqrnc tL,fuze having an accuracy of 0. 1%, i.,a (d) a 32-watt !zattcrj juppivv -0ghLA- approximately 0. 8 1, sower the ihteg I• systera P:d ttAewarhead 4ni'.ation circuits ,(s e - : 4, item 1. 1). Satisfactory labo-ratury oper.Ltlon lii. been d-m•r ..:,-rated for nearly all system cow-,-ponents. ]bricatitn of fifte.-, •aight -.uodels waustarted for porformi-arce evaluation of the Copperhe.i.l System in the Picatinn- rese&rchvehicle.

(C) The system design is based upon the following perforunnce:

1. Tim ",oe with ac. accuracy of 0. 1 sec for rngcs cnrri -ponding to flight times fron 3 to 45 sec.

l.he weight .he Little John power supply is approximately 8 lb.

5

CONFI OENTIAIW

2. Radio-.fuze for extended ranges (45 to 110 sec) withselectable burst heights ranging from ca NO to 1100 ft.

3. A near-surface ovrst fuzing function, to be incorporated

in the finalWVVIgn.

4. Operation over the full military temperature range with.

a reliability of,99%.

5. Maximum immunity against cointermeasured.

2.2 The Cigarette Fuze

(U) Plans are "xndt, way to incorporate this subminiatureproximity fuze, ik a weapon system (Davy Crockett). Since perform-ance details of this fuze are classified 'SEC'RWrT". further informa-tion iý not given in this document but appears in referebnces 3 and 4.

2. 3 Radar Range Finder

(U) This system is a hand-portable, battery-powered, radarrange-finder which should have wide application whereiser accuracyand light weight are premium requirements, for example in artilWJryand weapon systems of the Davy Crockett type. The short pulse radaroperates with a pulse of 10 m, sectanJ 100 w, developed and processedin an electronic package that is smaller than a shoebox and weighs only7 lb (see ref 2, item 1. 3).

(U) Since Ju4y 1959, some defects in the scope indicator unithave been corrected. The counter has been reconstructed to correcterratic behavior and t- incricaso rcibility. Operational system testLwere conducted. In these tests, certain defective components werelocated aid replaced. The major difficulty was a time litter in therange delay generator over about 2/3 o. the expanded R sweep. A con-centrated effort is being made to eliminate ths Jitter, either by employ-ing a magnetostrictive delay line and avalanche transistor circuit or byreplacing the phantastron circuit.

2. 4 Radar Altimeter (Jupiter)

(U) In reference 2, item 1. 5, 1± was reported that two inode1cof a simplified., self-telernetering. trajectory altimet6r were deliveredto ABMA. Difficulties were encountered in tho power supply. Themeare being corrected.

2. 5 Radar Altimeter (Pershing Types I and I)

(C) Two addi+•ota! miniaturized altimeters are bejk! deesjir d..developed, and tested. Type I is Intended to be "n e!rborne package,approximately 1- lb In wýight and 200 cu in. 'r .bolame which v-:l! pro-vide continuous altitude information frnm 50, 0Of,0 ft to below 1, GOO ft,

6 AONFILENTIAL

CONF1EBTWwith aa accuracy of 15 wo 30 ft. A -raziatorized cwysta-coatralledTimf.-base, and a pulse un-edulator, have been developeicL Wori~ '-,%been iwitiated ork a miiaiawiz'Aed version of the oscillator a~*.Atime Anterval coinqxate' wad a modulator cof bigher pow&A7 ; !iiaer de-veiopuzent..

(C) T1he Type 11 aliime~er is beL, designed for a Myetem, weigt-ing avoraxiinate!y it %i_ aaid having a volaime of apod tey125 cm in.I-of a device wi- provide a-Ititude information of the same type is thatof .ue prka- =xodeLla order to obtain umaiu=a re~.uction in weightarmi volume. mome, unorthodox mm iazurizatwi xcbemes are being con-sidered. T-P rexagibWtv of incorporati~ng the transmitter within theantenna is heing explarecL Alsa. the posadbility of incoroan thefa-st xtago of %he receiver in the transmitter or in :be autena cavityis bein considered. A surveji at low rmioe. W&g Swi transistors atION o is being nmade. If a type of wawastor now uagr dcwel~pemproves to be succe-sniia. it =ay be poasg.,3e to repckgw an esisting4(0 cia Un recetver in a voiume of akw 5 <-c ia.. Semi oa*ftztr wadu-Uator m=~ use inagpeic tecbvaques for pdlse sahrpeaing wMl be to-vesU&MwLd The power rejuirements cC the system wMl be keo to a

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CONFIDUJIATemperatures up to 15000C and pressures of several atnmosphereswill be measured. Launching forces up to 200,000 g are anticipatc'd.

(U) A transistorIzed 70-kc subcarrier oscillator and a varuumtube thermocouple telemcelr have been fabricated and teated. iiosalient problems rernman in the basic circuit design. Two majortechnical problems exist: (1) to find or dcevelop components that willwithstand the hlgh.-g shock and (2) to test the components and thecomplete system.

(tU) Several types of transibtors have been tekted; others arescheduled for test in the near future. Potting material is being' developedand tested.

(U) A ferrite-H-core rf oscillator was tested at 80, 000 g. Theoscillator survived impact in operating conditions but the frequencyshift was found to be unsatisfactory. Further development will be under-taken.

(U) A temperature transducer for heat transfer measurements of

the stagnation point of a missile in flight is being developed, calibrated,and tested.

(U) Investigations of the facilities available for the testing of com-ponents and systems under high-g conditions are being made.

3. COMPONENTS AND ASSEMBLIES

3.1 Millimeter Magnetron

(C) Successful peratici of a miniature 4 mm, 70 kmc magne-tron was reported ip reference 2, Item 2. 3. This tube produced 1 kwpeak output at 10% efficiency with 3500 v applied. The weight of thepackage was only 2.5 lb.r

'W (C) The lifetime of the first operating magnetron wav very shortbecause of 1063 of emission from a marginal cathode. A nickel -.ozi,.a-matrix caii.ode has been substituted and it has sabstantlily Jwp Lujver.emission. It operates at a lower filament temperature over a longerperiod of time. Output power of the new cathode is about 101 w. It Isexpected that this power can be r..;-ied by nnaking small changes inelectrical design.

3. 2 Microwave Strip Line

I (U) Photo-etched, .:flatcoaxlal, .4tr'i.%UiU components arebeing investigated as substitutes for standard rectanglv,!, "nierowave

circuit components. Vi.e of Lhese otrip-bine cowponents will cn-b.e .than a 50¶. reduction in sizi andweight of an rf head :3sembly (see ref 2,"item 2. 6).

8CrIIEIA

CONFiDENTIAL

(C) Two strip-line rf heads for the Little John T-2074 (XM'1)fuze were received from the contractor. Figure 1 compares thestrip line model with the wi,.eguide assembly. The contrac.-,*t1- modelexhibited excess rf leakage, due to +he large number o?' .-djustrnents.Redesign was started at DJOFL to improve the performance and reducethe size and weight by a factor of two. The resulting package shu•QJd be5 La. in diameter and approxirnately 2 ". in height.

(C) An antenna system was started for Lhe lightweight fuze.Antenna patterns were taken using the printed spiral as the basicelement. Component development work was begun un a strip-uine:;tfhead for the O.nral system.

3. 3 Pure Pzneumatic Computer Elements

(U) EXp@rlieiital models of purely pneumatic computerelements have been devised. Thcy can accomplish a-variety of logicalfunctions without moving parts. Arnplifieation, feedback, d.igitaliza-tion, proportioning, memory, and normal mathematical computationfunctions have been accotuplished. It is possible to design pneumaticanalogs of Iftost electronic- circuits at frequencies up to 20 kc. Thepneumatic -equivalents offer advantages of extreme ruggedness, reliability,ability to serve large forces, nuclear invulnerability, easy production-lot quality controA and testing, low cost, indefinite shelf life, highdensity power supply, and, in some cases, use of environment as directinput data and/or power supply. These advantages suggest wide applica-tion in weapons systenm. Work has been started on templates to per-mit application of printed circuit techniques in production of theseelements (ref 5).

3.4EElectronic Programmers

(U) A miniature timer has been designed for u" as a pro-grammer and time fuze. Its volume is approximately 10 cu in., and its en-Lapaurated.'.weigW.i apilIim.ntely 10 -i>. It Iiles p inte{i cir.duits andminiature transistors, and consists OT=2 mifitature binL,:ry .flip-tb:pcircui•o fed by a crystal-nontrolled oscillator.: ,'11he outpute - erecognized by miniature NOR circuits, which in turn control ,wit.-ing transistors, One prototype model of this design has been fau.1 -cated by a contractor and delivered to DOFL for evaluati6n. Six moreprototype units are in process of fabrication by thb cont'ractior.

3. 5 Power Supply

(p) Experimental treatm'ents of electrodes have reaultedin improved current density, i. e. w& increase from 0. 05 amp/s" i .,to 0. 5 amp/sq in. , it temperatures d)vwn :.o -•'F, in .itve-.-Oxide-zinc reserve batteries (see ref 2, item 2.13). Potassium hy-:•. -.,4.•-and other ele-ctrolytes are being investigatec'; r,•bidium hydroxide andcesiurn hydroxide show promise of higher conofuctivlty at vcry lowt,.r.ipcraturec. kr. activation schemewhich involves vacuum filling of

CONFIDENTIAL

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CONFiD&NTIAL '

CONFIDENTIALz common chamber containing a series-connected stank of silver-xide and zinc plates separated with a suithble material" is bei:nginvestigated. Experim•ental and prototype devices incor'poratingKthese developments are b.ag produced for evaluation prior to &ppli-

cation in the light weight fuze system.

3. 6 't-I•IF Amplifier

(U) An investigation is being conducted to determine thepracticability of constructing IV amplifiers in the "2-D" form. Thedr,.lign objectives are: (1) a gain of about 100 db: (2) a center fre-quency of about 30 mc/sec. and (3) a volume of a fraction of a cubicinch. The circuit,tander study empicys 2N700 transistors in a commonemitter configuration. The stages are not neutralized and simplefixed-tuned transformer interstage coupling elements are employed.

(U) Single operating stages hr've been constructed on ceramicplates which measure 0. 750 x 0. 750 x 0. 020 in. Cased transistorsare employed so that the advantages of the extreme thinnesa ol thewafer have not yet been rehlized. Individual stage gains of 20 db havebeen achieved. An IF amplifier in "2-D" form Is shown in Figure 2.The inter-stage transformers are a key element in this design. Thetoroidal. transformers have an o. d. of 0. 200 in. and a thickness of0. 040 in. Cores of Teflon, powdered iron, and ferrite have been tested.Such a transformer appears in the center section of Figure 3.

(U) Transistors having a thickness of about 0. 040 in. havebeen fabricated from commercial 2N700 transistors. This wan ac-complished by pouring potting =%.'crial into the case of the transis-tor, curing,, arn then slicing threugh the case immediately above andimme diately below ths transi-tor die. At the top of 'figure 3, thereis shown a trantistor which has been so treated. Connection is thenmade to the portions of the three relatively large-diamvter header-lead-through wires which appear adjacent to the die,

(U) A new "2--D" layout is being fabricated on a wafer of dimen-sions 0. 600 x 0. 600 x 0. 020 in. If an over-all stage thickness ofi0. 060 in. can be maintained, then a Aive-stage 100-dh amp1' :=,be built in a volume of about 0. 1 cu in.

(U) Studies are. also under way tr. determinae the bes* shieldingmethods. The present technique involves dipping the individual stagesin an insulating _,medium and then copper-plating to provide the shield-ing. Smaller toroldal trais.formers are i!mo being investigated. Themajor problems will lie in maintaining amplifier st-bIlity u .i providingproper frequency response with fixed tuning.

3.7 Digital7Electronic Prem Fimnp

(U) A digital electronic program li:ner employing •cnmmer-cially available subminiature parts was built. ;o demzonstrate the

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GCOIFIDENKTALfeasibility of replacing mechani..ral program tirmers with elwroni.:timers. The electronic tin'er provides five output pulses at fliedtime intervals with respect to tie last pulse. In addition, the intervalbeiween the time of starting the timer knd the time of generation ofthe last pulse is variable from U to 2U4. 8 b;c in steps of 0. 8 sec.This variable time is capable of being set from a remote point in lessthan 0 S see. The accuracy of this timer, excluding clock inaccuracies-Is inher'ently limited to +0. 0 or -0. 8 sec. Greater accuracies can beobtained by adding binary divider stages and using a higher frequency,more accurate,, :.2!ng oscillator.

(U) The packaged system contains 49 transistors, occupies avolume of 4. 12 cu in. and represents a packbging density of over110, 000 components per cu ft.(s9e fig 4). When multicomponent "2-D"printed wafers become available, a further volume reduction of 10:1will be possible, This development is described in detail tn reference 6.

3. 8 AC Signal Comparator

(U) A specialized, transistorized voltage comparator hasbeen developed. The unit is designed to raeauure the difference inamplitude between two signals of the same frequency and to determinewhich of the signaig is larger. The first model used two amplifierswith similar gain curves and compared their output. The dynamicrange of these amplifiers was about 80 db and adjustment of the twoamplifiers to obtain the desired similar characteristics was very diffi-,cult. The-new device uses one amplifter and switch between the twosignals and thus eliminrn *s ony aeed to balance the two high-Wa"• am-plifiers.

(U) The unit operates with a signal irequency of 28 kc and in-corporates automatic gain control. The sensitivity of the sylaiem is such

thnt unbalances of about 2 1v at an input level of about 100 uv provide arealable meter deflection of several microamperes. The bwitchingfrequency is about 100 cps. Power requirements are 12 v at 0 4' ,(ref 7),

3. 9 TroubJ, Shooting the DOFL "2-D" Binary Counter

(U) The DOML "2-D" binary counter is more difficult totrouble shoot than the type of package i'ont-',%Ing comxercial componentsbecauce not all circuit points are available for measurement A studyhas been made of the waveform.s, resistances and voltages at the avail -able terninals of the "2-D" wafer and these are used to diagnose cori•ponent failures. Cor,.Aet•. waveforms and n aR..emen'w fre given in s.report which is now being prepared for publlcatýon (ref M). 'hc • .-

tion of the unit is explaincd in a Yxon-mathemati-:.al fashion.

.a. 10 hficx-ý:ndu(U) A DOFL rdicrominiature lamp ii shown in figure 5,

mounteJ in the lower right-nand corner of a '2-D" binary divider circuit.

14 CONFIE NTIAL

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This "Microlamp.' is some'what smaller than earlier models andmeasures 0. 020 in. in diamieter by 0. 090 in. in length. The lampoperates in ithewrange. 1. 0 to .. 5 v. at currentubof 25 -to 30 ,r'i,respectively, can be sWitched on and off up to a frequeny "• 10Qcps, and has ,sufflcent light intensity to be easily visible from •any point in a normaly lighted room, Becaume c." iscall sizeand low power requirementct, this lamp 4* l4ted to nny appli-..cations employing,.microelectronic circuitry, for example, forreading out timer and computer infornmtion, and for built-in tcstlamps to indicate the prbper functioning of various ,ections ofcomplex circuitry (ref 9).

3. 11 High Fr!equency Diffused-Base Transistors

(U) Photo-engraving techniques have been employed inthe fabrication of diffused base transistors, and in the extenswon ofthese techniques, to assembly of the transistors as an integral partof two-dimensional printed circuit wafers (zee ref 2, ite* 2. 9).Transistors with emitter and base contacts of dimensions (L 002 x0. 006 in. were constructed in the past quarter. Vacuum depositedleads were used to make contact between bass and emitter Oarsand header leads. This construction provides a oolidmd *ruggedunit. which is being evgluated for high frequency performance andresistance to high shock. Electrical tests thus far show,.an alphacut-off of 280 mc with an alpha of 0. 928 at an emitter current of3 ma.

3.12 Tunnel Diode

(U) A new type of semiconductor device known as the"tunnel diode" or the "Asaki diode" has a number of interestingproerties. as follows:

1. Stable negative resistance characteristic.2. Relatively insensitive to changes in temperature.3. Insensitivity to semiconductor surface cun•Jtions

(due to high impurity concentrations).4. Operation in high nuclear radiation envirornment.5. Very high frequency uperation; oscillation pp to

10,000 mc has been reported.6. Fast switchiihg ,qpoed (kilomegacycle rates hive

been mentioned).7. Noise almost as low as that of masers and

parametric amplifiers.8. Adaptability to simple circuitry for performing

most of the types of functio-w -.zdpd in szmalsignal devices.

9. Very low power consumption.10. Very small size, hence adap abil).lty to micro-

miniature circuits.

CONFME 17A

(U) These properties are obtaiiied because this device useathe majority carriers and fu-nctions by "quantum mechanic•al" t,.nn.lang.

(U) Germanium tvtrnel aiodes built at DOFL exhibit peiv,. currentsin the range 200 pa to 200 ma and appear to be rugged and stable. TheSprincipal- limit ations ofteedvcrar,7: ()a lmtdvoltage- region

I of 50 to 350 mv (with a fel# ohms of negative resistance), and (2) a high

value of junction capacitance. However, the iin-itations may be over-come by operation of suitably designed circuits. The tunnei diodeshouia be useful ii "2-ID" circuits because of the very low power re-quired, and freedom from heating probleens in very compact assemblies.

3. 13 NOR Semiconductor Solid Circuit

(U) A NOR solid circuit was designed and fabricated. TheNOR circuit was chosen as the simplest building blnck for solid cir-cuit fabrlcatiozi on diffused base germanium. This circuit containsfour resistora, and one tranvistor. It functions as a =:ultipie input.nverter in. that a voltagel on one input or on both inputs results in,zero output, wheieao zero input gives a voltage output. This functionjis accomplished because. the transistor operates in either the cut-offor saturation state. Te~t apparatus was built to study and evaluatethe circuit.

3. 14 Printed Cables and Harnesses

(U) As stated in reference 2, item 2. 11, two bids were re-ceived and a third one was expected on a proposal for the developmen+of flat, flexible, multiaonductor cables in 500-ft lengths. Epch cablewas required to comprl ? P 0. 08-in.-thick polyester matrix in whichwere embedded 30 flat copper conductors 0. 025 in. in width and spaced0. 045 in. 'from center to center. The third proposal did not materializeand, hence, testing of the two cables submitted by IRC and Tape CableCorporation was sta*tted. The tests will include electrical, physical,and chemical measurementsi.

3. 15 Antennas

%U) Two techniques for reducing the size of telc meteringantennas are being investigated, iu both cases, linear dimensions arecut approximately in half. The first approach uses capacitance loadiig;the Epcond uses ferrite materials for inductive loading (see ref 2,item 2. 7).

(U) In the first approach, an antenna-amplifier combination fc;-the 235-260 mc range was built during this quartor. It i. !-elg readic Jfor tests of efficiency, b.-.ndwidth, and antenna pattern. This ar.r 14 fi.should be capable of power outputs up to about 200 w, Some difficultyis being experien-ed because of the high input capazitance of thc tube

(4X250) being used. A cosaxal impedance transformer lq being d1e.34pad-to, provide the impedance mnatvh~* between driver ead aniolifter.

* (U) A usmaller model desigited to operate at 900 me ii beingdeveloped for the Perijbing Alttimeter prOject. This upat will colnbine apULte.-pulsq ospillator, with the antenna. & m~odel of thin unit hia. bc=n

* ~ opletd, s4 ~ tesedbut no dats. are a~v4.ilsle.

ý) 4ie #etýond approach. a contract (bA-40-18G-502-OaD-ft4G)has been~. et. p,!pr ..Micongsve Uflectronics Company ford rntte~tulsdeve oypnieit.L W'ho prlirilnax work consists In thei tsibricatfion'Otreprcezntat~'ve conipoaitioni of ai famitly of ferrite -likeý rnatortali hav-ing hexagona~l crystal structure akod a preferred plane oftrnsgnutlzation.'It should be possible to produce a. material of iuhez~rpermeabilit andlower loss at higher frequency than comparable Urkites. The itfteftswork under this project 1;a! eiaaed.. pendixg availab13ity 91uiaterials.

3. 14~ Th~n-Alm, Capacitoro and Ripuia'cors

0.1C.1 Vccuumrdepostted c~pecitars:

(U) iiisakdown sti'angt~iaod other properis I ;~ my begreatly affected by penetratton of -the vacuum-d6Vouited counter eledtrud"into pinholes in the dielectric film. An zdditl~a~al graup of 510-dielectriccapacitors was therefor* made. Half of the group W4 katmdadvacuuwn-

* depouxitec4 Au. coinakr etloctrodes.. and the other half hag counter electrodesme, do from Sa& uncured s4lver-filled epoxy resin which -abould not penetratethe P4*hOeS., -'Akrd~n, strengtI~ and other propirtiesiwill be comap*redfor, both. typos.:

3. lv,,. 2 Vqý0wu~-dappsited resistors:

(i.1)~ev~a~roupro of nWclrome film resistors have boeenvacuum-deposited onto g~lass. Resistivity r~tged ftrnn 50 to 4",(0ohus/jcqwfolý].owing accqlerated sgln~g treatment at 2500C for 20 minOver api~rio4 of 3000 hr. values were stable within *22%, thr i Obeing within il 0%. Th~qvalues are beaieeved to ba vv~eq-te fer r:rcircuits wi~w being~cqns4.ed

3. 16.'3. Electroless depoeition of nickel'-film resistors:

S(U) !TLe deposition of rev iz*4ve films of Met~l$~iicdis being investigated an a mens , o t produping reuistorgtot f' ,~ tabita-tion of 27 -XV! circuitry. Resistive films were p~modu~ced'on se,.sitisedglass slidea by imn~ersiag tleni in an electrdl&Aas zicke) bath.' VU=6n*with resistfvities of sthout 5 00 iobnis / sq, waire fiayosited re ofdi~blyfrom solgution at 50dC. be-,roaulng the deplositievi temprdi e i 4'raised the resistivity ýof filmo to I - 10 kohm*/ .iq.

Yak~.................................

4. METHODS, PROCESSEi AND TECHN UES.

4. 1 Spray-etching

(U) The stainless. steel spray etcher, which employsammonium persulfate as etchant, was used to etch boards on whichthe patterned area was protected either with plated solder or withphvorehist. The solder-plated boards etched satisfactorily. How-ever, the spray wan too forceful for boards protected with photoresistand the patter'n broke down. Plans to modify the spray etche tocorrect this trouble are being delayed pending collection of the latestinformation on commercial spray etchers.

4. 2 External Effort on "2-D" Wafers

4. 2. 1 Pilot-lot Production of "2-1)" Wafers

(U) Late in thef preceding quarter, a contract was letfor the manufactire of 200 "2-D" bl- iry counters by current DOFLtechniques. During the present quarter, discussions were held withthe contractor and work was Initiated by the company. Delivery isexpected to begin by December. 1959.

4. 2. 2 R&D 2n "2-D" Wafers

(U) The purposes of this contract arc to conduct re-search and development leading to a refinement of the microminiaturiza-tion techniques pionee'-ed by r.3FL, and to determine their value andreproducibility by assembling experimental sample quantities of a basicbinary countt.r. Available alloy, diffused base, and mesa transistorswill be modified, as required, to adapt them for use with certaintechniques, such as vacuum deposition of leads and photolithography,which may be employed in processIng the circuit modules,

(U) The contract was let in the previous quarter. W,, 4 . ýo daa-.has involved the investigation of various cncapsulat•.Ji rI mteriald.f-cementirg the transistors in the "2-1)" plate, Hysol 6020 wasfound to produce the least change in the amall signal parameter& ofthe Philco 2N501 germanium rnic o-alloy-diffuned transistor.

(U) Progress was made in work1Ung o':t techniques for swutteringtantalum on an insulating substrate for ultimate use as resibtanceelements and tantalum printed capacitors. These films areAý.osteasily applied by cathodic sputtering because they are too reffactoryfor simple vacuum evpn•,ration. These Yi'l-i can be reproU%',,eb)v dcposited in layers having resistivities ranging fromn 5 to 4000 ohbm/sq.

SU) Aluminum has been chosen as the material for use as con-ducting; leads be -!•e of its high conduc~vity, good corrosion re-sistanct., ease of deposition, anzd low cost.

?0lD~P

iGONFID,,TI.AL,

5. REFERENCES

(1) DOFL Technics! Report Nn. TR-607: Technical Sta-ueTteporton Microminiaturization (U) by N. J. Doctor and E. J. . r-sey,2 June 1958 (CONFW ETIAL).

(2) DOFL Technical Report No. TR-760: Summary of Microminiaturi-zation Prograin - 1Y 1959 (U) by I. Rotki n'4A"gat~s 1959

(NFENTA14L.

(3) DOFL Technical Report No. TR-734: The C1iarette Fuze (U), byH. P. Kalmus, 15 July 1959 (SECRET) (in process of publication).

(4) DOFL Technical Report No. TR-733. Cigarette Fuze Field Tests(U), by G. W. Kinzelman, 30 July 1959 (C) (in proccs or publication).

(5) DOFL Report No. .110-59-10- Pure Pneumatic Comuters (U)by R. E. Bowles. G. D. Hinshelwood., B.M.Horton ,and11.R.Palmlsanto. 15 September 1950.

(6) DOFL Report R310-59-19: A Digital Electronic Program Timer (U),by N. Doctor and S. Gordon, 27 June 1959.

(7) DOFL Report R920-59-1: An AC Signal Cornarator (U) byStanley H. Gordon and David W ams I September 1959.

(8) DOFL Technical Report No. TR-793: Trouble Shooting the DOFL2-D Binary Counter, (in process of publication7.

(9) D. J. Belknap, Microlamp, 1959 IRE Wescon Convention Record(Part 6).

CONFWID.TI.AL

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68 Kalmus, H. P. /HardKn, C. D , I ,aI 0""69 Horton, B. M., Lab 40070 Rotkti.. I.. Lbb 30071 Landis, P. E., Lab 40072 Hatcher, R. D., Lab 5007) Campaggia, J. H. , Lab 60074 White, H. L. /Apolenis, C. J. r '.v 7- Q75 DeMasi, R., Div 800,16 Franklin, P. J. /Horsey, E. F., Lab 9,77 Seaton. j. W. /26078 Technical Reports Unit/800

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TWO PAGES OF ABSTRACT CAR .

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