Ultra-Low-Power RF CMOS Transceiver Designmasu- · Ultra-Low-Power RF CMOS Transceiver Design...
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Tokyo Institute of Technology, Masu and Ito Lab. Motivation: Ultra-Low-Power RF Circuit Low Supply Voltage Operation Impulse OOK Transmitter with RF Energy harvester [1] Wireless Sensor Network (WSN) Measurement Results System Architecture Impulse Transmitter Dickson-type RF Energy Harvester http://masu-www.pi.titech.ac.jp/ Ultra-Low-Power RF CMOS Transceiver Design Technology 65nm CMOS 680um X 560um Die Area Supply Voltage 0.4 - 1.0V Modulation OOK TX only Carrier Freq. 2.47GHz Power Energy per bit Output Power 2.3uW 2.3pJ/bit -62.1dBm (1) (1) (1) 0.5V, 1Mb/s, 20MHz BB Clock (2) 20MHz CW, 225MHz BW (2) Sensitivity -19.5dBm RF Energy Harvester RF Frequency 800MHz V V IN OUT V D+ V S- DtMOS buffer RF operation Analog MHz operation Digital Cp Lp Co Cs Load BB Clock Data RFout Rd D+ S- injection impulse generation Y V D+ V S- RF Energy Harvester (RF-EH) ID Generator RF-to-DC Converter Voltage Detector RF impulse Transmitter EN,ENX Data Clock 20MHz Super Capacitor Power Switch 2.5GHz 800MHz Power Supply (Clock recovery from 800MHz input signal, or on-chip RTC + leakage-based Osc.) 39nH 6.8nH RFin (800MHz) External V D+ V S- M p1 M p2 M p3 M p4 M n4 M n3 M n2 M n1 V > 0, V > 0 GS BS NMOS threshold compensation V < 0, V < 0 GS BS PMOS threshold compensation 100um RF EH TX Det Area for unrelated TEG Lp Cp,Co Cs Fabricated in 65-nm CMOS RF-EH input (800MHz) Power Supply EN Clock (20MHz) Data (1Mb/s) Tx Output (Impulse, 2.5GHz) Charge Signal Transmission Recharge Signal Transmission Recharge 1/20MHz 2.5GHz Time TX Sleep TX Sleep TX Sleep Data Tx Output H L H L H H 40 impulses / High Operation -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 RF-to-DC Converter Output Voltage [V] V D+ V S- -19.5dBm V D+ V S- - Supply voltage VOD turns ENX. V D+ V S- - crosses 0.6V -35 -30 -25 -20 -15 -10 -5 0 Input Power [dBm] Measurement RF-EH performance TX output (Amplified by external amp. in measurement system) Input Data (1Mbps, PRBS) OOK waveform of TX 1ns time Magnitude [mV] 0 4 8 -4 -8 V D+ V S- - =1.0V 0.4V TX output waveform TX frequency characteristics -12 -10 -8 -6 -4 -2 0 0 1 2 3 4 5 Frequency [GHz] Magnitude of S22 [dB] 50MHz (FF/TT/SS corner) x (3 samples) ● The significant challenges are minimization of the sensor device cost. Masu Group Tokyo Tech e.g. Battery-less sensor device ■ Ultra-low-power RF ■ Energy harvesting (EH) ... 1k 10k 100k 1M 10M 100M 1G 10G 100G Bit Rate [b/s] 1n 10n 100n 1u 10u 100p 10p 1p Energy per bit [J/bit] This work 1Mb/s, 2.3uW, 2.3pJ/bit 10uW [4] 11Gb/s 29mW 2.6pJ/bit [3] 30kb/s 22.4uW 747pJ/bit [2] 10Mb/s 91.8uW 9.2pJ/bit* Lower Power Our TX conditions Supply voltage: 0.5V BB clock freq.: 20MHz Bit High/Low ratio: 50% *If 1 impulse can transmit 1 bit. [2] M. B.-Nejad, et al., ISSCC, pp. 198-199, 2009. [3] J. K. Brown, et al., ISSCC, pp. 442-443, 2013. [4] K. Kawasaki, et al., ISSCC. pp. 414-415, 2010. Low power consumption Low signal-to-noise-ratio (SNR) Low operational freqency Low voltage headroom Target: Ultra-low-power transceiver with low supply voltage operation [1] H. Ito et al., RFIC, pp. 13-15, 2014 ● Maximally digital architecture - Ultra-low power and superior energy per bit ● Simplification of power management - LDO-less, powered by directly by RF-EH ● Threshold compensation - High conversion efficiency and sensitivity Low power and low energy per bit were achieved under wide supply voltage range.
Transcript of Ultra-Low-Power RF CMOS Transceiver Designmasu- · Ultra-Low-Power RF CMOS Transceiver Design...
Tokyo Institute of Technology,Masu and Ito Lab.
Motivation: Ultra-Low-Power RF CircuitLow Supply Voltage Operation
Impulse OOK Transmitter with RF Energy harvester[1]
Wireless Sensor Network (WSN)
Measurement Results
System Architecture
Impulse Transmitter
Dickson-type RF Energy Harvester
http://masu-www.pi.titech.ac.jp/
Ultra-Low-Power RF CMOS Transceiver Design
Technology 65nm CMOS680um X 560umDie Area
Supply Voltage 0.4 - 1.0VModulation OOK
TX only
Carrier Freq. 2.47GHzPowerEnergy per bitOutput Power
2.3uW2.3pJ/bit-62.1dBm
(1)
(1)
(1) 0.5V, 1Mb/s, 20MHz BB Clock(2) 20MHz CW, 225MHz BW
(2)
Sensitivity -19.5dBm
RF Energy HarvesterRF Frequency 800MHz
V
V
INOUT
VD+
VS- DtMOS buffer
RF operationAnalog
MHz operationDigital
Cp Lp
Co
Cs
Load
BB ClockData
RFout
Rd
D+
S-
injection impulse generation
Y
VD+ VS-
RF Energy Harvester (RF-EH)
IDGenerator
RF-to-DCConverter
VoltageDetector
RF impulseTransmitter
EN,ENX
DataClock
20MHz
SuperCapacitor
PowerSwitch
2.5GHz
800MHz
PowerSupply
(Clock recovery from 800MHz input signal, or on-chip RTC + leakage-based Osc.)
39nH6.8nH
RFin (800MHz)
ExternalVD+VS-
Mp1 Mp2 Mp3 Mp4Mn4 Mn3 Mn2 Mn1
V > 0, V > 0GS BS
NMOS threshold compensation
V < 0, V < 0GS BS
PMOS threshold compensation
100um
RFEH
TX
Det
Area for unrelated TEG
Lp
Cp,CoCs
Fabricated in 65-nm CMOS
RF-EH input(800MHz)
Power Supply
EN
Clock (20MHz)
Data (1Mb/s)Tx Output
(Impulse, 2.5GHz)
Charge
SignalTransmission
Recharge
SignalTransmission
Recharge
1/20MHz
2.5GHz
Time
TX Sleep TX Sleep TX Sleep
Data
Tx Output
H L H L H H
40 impulses / High
Operation
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1.0
1.2
RF-
to-D
C C
onve
rter O
utpu
t Vol
tage
[V]
VD+
VS-
-19.5dBm
VD+ VS--Supply voltage
VOD turns ENX.VD+ VS-- crosses 0.6V
-35 -30 -25 -20 -15 -10 -5 0Input Power [dBm]
Measurement
RF-EH performance
TX output(Amplified by external amp. in measurement system)
Input Data (1Mbps, PRBS)
OOK waveform of TX1ns time
Mag
nitu
de [m
V]
0
4
8
-4
-8
VD+ VS-- =1.0V
0.4V
TX output waveformTX frequency characteristics
-12-10
-8
-6-4
-20
0 1 2 3 4 5Frequency [GHz]
Mag
nitu
de o
f S22
[dB
]
50MHz
(FF/TT/SS corner) x (3 samples)
● The significant challenges are minimization of the sensor device cost.
Masu GroupTokyo Tech
e.g. Battery-less sensor device■ Ultra-low-power RF■ Energy harvesting (EH) ...
1k 10k 100k 1M 10M 100M 1G 10G 100GBit Rate [b/s]
1n
10n
100n
1u
10u
100p
10p
1p
Ene
rgy
per b
it [J
/bit]
This work1Mb/s, 2.3uW, 2.3pJ/bit
10uW
[4]11Gb/s29mW2.6pJ/bit
[3]30kb/s22.4uW747pJ/bit
[2]10Mb/s91.8uW9.2pJ/bit*
LowerPower
Our TX conditions Supply voltage: 0.5V BB clock freq.: 20MHz Bit High/Low ratio: 50%
*If 1 impulse can transmit 1 bit.[2] M. B.-Nejad, et al., ISSCC, pp. 198-199, 2009. [3] J. K. Brown, et al., ISSCC, pp. 442-443, 2013. [4] K. Kawasaki, et al., ISSCC. pp. 414-415, 2010.
Low power consumptionLow signal-to-noise-ratio (SNR)Low operational freqencyLow voltage headroom
Target: Ultra-low-power transceiver with low supply voltage operation
[1] H. Ito et al., RFIC, pp. 13-15, 2014
● Maximally digital architecture - Ultra-low power and superior energy per bit
● Simplification of power management - LDO-less, powered by directly by RF-EH
● Threshold compensation - High conversion efficiency and sensitivity
Low power and low energy per bit were achievedunder wide supply voltage range.
