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MD #4035

TYPES TI 130, 131, 132, 133, 134 DIFFUSED SILICON PNPN CONTROllED RECTIFIER ~

mechanical data

3 AMPERES • SO to 400 VOLTS PIV All welded construction

Ruggedized to meet stringent military requirements Highly sensitive operation

The TI 130 series PNPN (ontrolled rectifiers are four layer (3 junction) solid state thryatron devices for use

in power switching appli(ations up to 3 amperes average rectified forward (urrent.

ACTUAL SIZE

Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 4 .. 5 grams. Anode is attached to stlld for high heat transfer.

maximum

.~ 0.280 MAX

[ 0.090 0.700 MAX

0.125 MAX

II 0.065 DIA 2 HOLES

0 .042 DIA 2 PLACES

ratings

~ol------+-- 0.800 MAX

Average Rectified Forward Current (I F) at + 75°C Average Rectified Forward Current (I F) at + 125°C Recurrent Peak Current (ip) at + 75°C Recurrent Peak Current (ip) at + 125°C Surge Current, 1 cycle at 60 cps at + 75°C Peak I nverse Voltage -65' C to + 125°C Storage Temperature Forward dc Gate Cu rrent (I G F Max) Gate Peak Inverse Voltage (-65°C to + 150°C)

Stud Torque All temperatures are stud temperatures.

specifications 25 ° C stud temperature

Minimum breakover voltage (VBO) (Note 1) Minimum Reverse Breakdown Voltage (V RO) (Note 2) Maximum Forward Voltage Drop (VF) at 3 amperes dc Maximum dc Reverse Current at PIV

Gate Current Required to Turn Device on (lGF) (Note 5) Forward Current (I H) Required to Hold Device in

"On" Condition with I GF = 0 Gate Breakdown Voltage (VGRO) (Note 2)

10-32 UNF-2 THREAD

~ATE

I I ... 0 OPERATING TEMPERATURE

I I I ..... 0 -650C to 1500C

CATHODE

TI130 Tl131 TI132 TI133 TI134 unit 3 3 3 3 3 amps

1 1 amps

10 10 10 10 10 amps

.3 3 3 3 3 amps

25 25 25 25 25 amps

50 100 200 300 400 volts

150 150 150 150 150 °C

100 100 100 100 100 ma

5 5 5 5 5 volts

15 in-Ibs

TI130 TI131 TI132 TI133 Tl134 unit + 50 +100 + 200 +300 + 400 volts

-60 - 120 -240 -360 -480 volts

2 2 2 2 volts

-1 -1 -1 -1 -1 ma

min typical max unit 5 20 ma

0.1 5 25 ma

6 volts

Forward Gate Voltage Drop (V G F) at 25 ma Gate Current With Anode Current = 0 1.5 volts

notes 1. Test cond itions-Forward current less than 1.0 milliamperes measured with

1 K resistor between gate and cathode.

2. Bre~kd~wn ~oltage under reverse bias condition on the gat~ or across the entire deVICe IS defined as the voltage at which the current is 10 milliamperes.

3. Thermal impedance measurements indi ca te a typical va lue of approximately S.ooe/ watts between the junction and stud.

LICENSED UNDER BElL SYSTEM PATENTS

4. Stud temperatures were measured using a 0.042 hole drilled in the middle of the flat of one side of the hex base.

5. Test conditions-Anode source voltage = + 50 volts and load resistance = 2000 ohms.

6. Typical turn-off times are approximately 10 times the turn -on time.

II1II C ... ... m :::! z Z p C ... in ... ... w ~'1

l> c G') C 11\ ~-I

-0 VI -0

TEXAS INSTRUMENTS SEMICONDUCTOR-COMPONENTS DIVISION INC 0 R P 0 RAT E 0

SEMICONDUCTOR·COMPONENTS DIVISION P . O . BOX 3' 2 13500 N . CENTRAL EXPRESSWAY

DALLAS. TEXAS

..... -< ." m 11\

:::!

w 0 ..... :I: ;a 0 C G') :I:

:::!

w 01:>0

TYPES TI 130, 131, 132, 133, 134

o 100.0 E I

I­Z UJ D:: D:: ::::> u o z o <5 r.

10.0

1.0

TYPICAL HOLDING CURRENT

CHARACTERISTICS

CR 10 n ~ ~ , N

':-.! p i

~ ~ ........ Ft ....... ...... ......

......... ....: ........ R = 1 K n "':::::::::..ol! -......;;:

I R = 00 n -> -80 -40

STUD TEMPERATURE - °c

TYPICAL TEMPERATURE CHARACTERISTICS

u 60 °

6 x 6 X){6 HEAT SINK

I-~+-~-+_ AT IF = 3 amps ~~+--~--bI'----I

I UJ 50 D:: ::::> I- 40 « D:: UJ a.. 30 ~ UJ l-

I-- 20 z UJ

10 Cii ~ « 0

0

4 x 4 X){6

AT IF=3 I

2x2x){6 AT IF = 3 amps

10 20 30 40 50

STUD TEMPERATURE - °c

definitions

60 70

1. V 80 - (Breakover voltage). The va lue of positive vo ltage between anode anJ cathode that will switcll the device on.

2. YF - Furward voltage bet\\lcen anode and cathode whe n device is 011.

3. V GF - Positive voltage bet ween gate and cathode. 4. V GR - Negative vo ll age between gate a nd cat hode.

design notes

80

TYPICAL FORWARD CURRENT "OFF" CHARACTERISTICS

'" 1000.0 Cl. E o :1-

I I-­Z UJ D:: D:: ::::> U

o D:: « ~ D::

o LL

100.0

10.0

1.0

- , _ ANODE VOLTAGE = 50 volts GATE CURRENT = 0 ma /

7

--80 -40 o +40 +80 + 120+ 160

STUD TEMPERATURE - DC

CURRENT DERATING CURVE o D:: « ~ D::

o LL

'" o Cl. UJ E LL 0

~ U I--~ Z

UJ UJ D:: o D:: « ::::> D:: U UJ

> « x « ~

3.5

3.0

2.5

2.0

1.5

1.0

0.5

o

CURVES ARE FOR 180° I----+--+---+-I----+--+--- CO NDUCTION

I-=-+-=--+---+--t--+---+lif.- ANGLES FOR DC CURRENTS

~+--+--+~!---h--+--\-MU L TI PLY BY 1.33

-50 o +50 + ,100 +150 +200

STUD TEMPERATURE - °C

5. VRO - Anode reverse breakdown voltage. 6. V GRO - Reverse gate breakdown voltage with anode circuit o pen.

7. I H - Anode sliMaining current required to hold the device in the on conditi on with gale c ircui t open.

H. IGS - Gate cu rrent req uired to sa turate th e device. \). lGF - Gate c urrent required to turn th e device on with a

specified load line.

Types Tl 130 series PN PN silicon controlled rectifiers are designed to meet or exceed the environmental requirements of M I L­T-19500A as follows:

test

Solderability Temperature Cycling Moisture Resistance Shock . Centr ifuge Vibration Fatigue Salt Spray.

TEXAS INSTRUMENTS INC 0 R P 0 RAT E D

SEMICONDUCTOR- COMPONENTS D I VISION P. O. BOX 312 13500 N . CENTRAL EXPRESSWAY

DALLAS, TEXAS

TO SUPPLY THE BEST PRODUCTS POSSIBLE, TEXAS INSTRUMENTS RESE~VES

THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN.

paragraph

4.6.23 4.6.24 4.6.26 4.6.2R 4 .6.29 4.6.30 4.6.35

PRINTED IN U. S. A.

J

j

1

(

( ,

TYPICAL GATE TURN ON CHARACTERISTICS

U <IJ

'" :::l.

I

1.2

1.0

~ 0.8

I-

z o 0.6

Z 0:: => I- 0.4

0.2

o

I I I I I I I

r-r:!- -"""v

100 P ohmstR: v

1 0 J--t. o-JVVv-l;:: r- Or Ji!-

FORWARD CURRENT = 1 amp

I I I I

" 1 _I 1 J

~, ANODE, VOLTAGE = 50 volts

..........

"- .......... r-- r------ANODE VOLTAGE = 100 volts..../

'ir-r-

I I I I

See notel6 pare 1

o 40 80 120 160

GATE CURRENT - ma

TYPICAL FORWARD CONDUCTION CHARACTERISTICS

200

1.4 ,-----,-----,.--,----,--,----.

1.2

~ ~ 1.0 j--~~=--::..,......q~~+_-----l---_I

w t:) ~ 0.8

e > o 0.6 0:: <I: ~ 0:: o 0.4 LL.

0.2

o o

CURVES ARE FOR STUD TEMPERATURES ON A 6 x 6 x Yi'. HEAT SINK

1.0 2.0

FORWARD CURRENT - amps

3.0

TYPES TI 130, 131, 132, 133, 134 TYPICAL CHARACTERISTICS

TYPICAL ANODE TURN ON CHARACTERISTICS

GATE CURRENT = 100 ma

1.2 t----t-

10 J-L 1.0 t----t- 0 '----+----'

I I I I I ANODE VOLTAGE = 50 volts

u Sl :::l.

I 0.8 1----+- -I--+--I-l----t-----::l:;;;;....-.9---; w ~ i=

~ 0.6 I---+--+-~-'F--t----+--::::;;;j;.-'"'I"""~

z 0::

~ 0.4 1------,f-~7""F--+--H--+--+-+---i

0.2 f-L---+--I--+--l---+--+-+---i

See note 6 page 1 o ~~--~--~--~~--~--~~

o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

FORWARD CURRENT - amps

TYPICAL FORWARD GATE VOLTAGE DROP

1.15

!! ~ 1.10

I c.. o ~ 1.05 w t:) <I: l-e 1.00 > w I-

('3 0.95

o 0:: <I: ~ 0:: 0.9 o LL.

........

vs STUD TEMPERATURE

.......

"-'"

GATE CURRENT = 5 ma FORWARD CURRENT = 0 ma

~

"'-~ ~

'~ ~

\ i\

40 o 40 80 120 160

STUD TEMPERATURE - °C

SEMICONDUCTOR-COMPONENTS DIVISION

TYPES TI 130, 131, 132, 133, 134 TYPICAL CHARACTERISTICS

TYPICAL V-I CHARACTERISTICS

t! +250

~ +200 I

(!) + 150

~ +100 o > +50

Vao

IG = 1 rna

IG = 2 rna

riG = 4 rna_

I I "IG = 4.5 rna

\r_IH ~ 0 o i!= -50 -«

\. IG = IGS = 5 rna

u -100 o I- -150 LU 8 -200 z -« -250

-300

r---------

r- VRO

-10 -5 0 + 5 + 10 + 15 ANODE CURRENT - rna

TYPICAL V BO CHARACTERISTICS vs TEMPERATURE

1.2 r-------.--r---,-----,--,-----,--,-----,---,

LU

:3 E -«..r:: > 0 o 1.0 t---+--t---+-~Oooo;;:::_-+------""'i....::_--+---+-----1 00 1-0 ~

LU > 11 ~ O! 0.8 f----+-j---f""-.....::If----t-----j--t-~----t

U:::r: O!I-

I~ LU u 0.6 t---+--t---+-------1f---+-------1-----""d---+-----I ()o -«Ii") I-c-.

01-> -« 0.4 O!Cl LULU >O! 0::::> ~ ~ 0.2 LULU O!~ a:l

-50 0 +50 +100 JUNCTION TEMPERATURE - °C

TEXAS INSTRUMENTS INC 0 R P 0 RAT E 0

SEMICONDUCTOR COMPONENTS DIVISION

P . O . BOX 312 • 13500 N. CENTRAL EXPRESSWAY

DALLAS. TEXAS

+150

TYPICAL DC GATE CHARACTERISTICS 2SoC STUD TEMPERATURE

on -(5 >

c... o O! Cl LU

1.2

1.1

() 1.0 -« I--' o > LU

':;{ 0.9 ()

Cl O! -« ~ 0.8 o LL.

0.7

/ I

V /'"

V '/

/ /

/ /

NOTE: IF = 0

o 5 10 15 20

3.5

3.0

0 2.5 E I

I-Z 2.0 LU O! O! ::::> u

1.5 LU I--« () - 1.0 ..P

0.5

0

FORWARD GATE CURRENT - ma

TYPICAL GATE SA TURA TION

CURRENT CHARACTERISTICS

~ IGS IN --r-- -~"P- -:~

r--.... r--,.... T Rt T V ""'~

'" I

" R= l KI!

.....

"" ~ ---l-----J r-... / -......

R = wI! 1 -I

-50 o 50 100 150

STUD TEMPERATURE - °C

)

25

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